MCH3484. Power MOSFET 20V, 40mΩ, 4.5A, Single N-Channel. Electrical Connection N-Channel
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1 MCH484 Power MOSFET V, 4mΩ, 4.A, Single N-Channel Features On-Resistance RDS(on)1=m (typ).9v Drive Pb-Free, Halogen Free and RoHS Compliance ESD Diode - Protected Gate Electrical Connection N-Channel Specifications Absolute Maximum Ratings at Ta = C Parameter Symbol Value Unit Drain to Source Voltage VDSS V Gate to Source Voltage VGSS V Drain Current (DC) ID 4. A Drain Current (Pulse) PW 1 s, duty cycle 1% Power Dissipation (9mm.8mm) IDP 18 A PD W Junction Temperature Tj 1 C Operating Temperature Topr to +1 C Storage Temperature Tstg to +1 C 1 Packing Type : TL Marking TL 1 : Gate : Source : Drain LOT No. FR LOT No. Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient (9mm.8mm) R JA 1 C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page of this data sheet. Semiconductor Components Industries, LLC, 1 January 1 - Rev. 1 Publication Order Number : MCH484/D
2 Electrical Characteristics at Ta C MCH484 Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=V V Zero-Gate Voltage Drain Current IDSS VDS=V, VGS=V 1 A Gate to Source Leakage Current IGSS VGS=±4V, VDS=V 1 A Gate Threshold Voltage VGS(th) VDS=1V, ID=1mA..8 V Forward Transconductance gfs VDS=1V, ID=A.6 S RDS(on)1 ID=A, VGS=.V 4 m On-State Resistance RDS(on) ID=1A, VGS=1.8V 49 m RDS(on) ID=.A, VGS=1.V m RDS(on)4 ID=.1A, VGS=.9V 16 m Input Capacitance Ciss 6 pf Output Capacitance Coss VDS=1V, f=1mhz pf Reverse Transfer Capacitance Crss 6 pf Turn-ON Delay Time td(on) 8.9 ns Rise Time tr 49 ns See specified Test Circuit Turn-OFF Delay Time td(off) 6 ns Fall Time tf ns Total Gate Charge Qg 11 nc Gate to Source Charge Qgs VDS=1V, VGS=.V, ID=4.A.9 nc Gate to Drain Miller Charge Qgd 1.8 nc Forward Diode Voltage VSD IS=4.A, VGS=V.8 1. V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit.V V V IN PW=1 s D.C. 1% V IN G V DD =1V D I D =A R L = V OUT P.G S MCH484
3 MCH V 1.4V 1.V ID -- VDS 6 ID -- VGS VDS=1V V V.9V VGS=.8V 4 1 Ta= C C RDS(on) -- VGS Ta= C 4 ID=.1A 4.A A.A RDS(on) -- Ta 1 1 VGS=.9V, ID=.1A VGS=1.V, ID=.A VGS=1.8V, ID=A VGS=.V, ID=.A Forward Transconductance, gfs -- S gfs -- ID 1 VDS=1V Ta= C C Source Current, IS -- A Ambient Temperature, Ta -- C IS -- VSD 1 VGS=V.1 Ta= C C RDS(on) -- ID VGS=.9V Switching Time, SW Time -- ns Forward Diode Voltage, VSD -- V SW Time -- ID 1 VDD=1V VGS=.V 1 1.8V.V V 1 tr tf td (on) td(off)
4 MCH484 1 Ciss, Coss, Crss -- VDS f=1mhz. V DS=1V ID=4.A VGS -- Qg Ciss, Coss, Crss -- pf 1 1 Ciss Coss Crss. 1.. Thermal Resistance, RθJA -- ºC/W S O A IDP=18A (PW 1μs) ID=4.A Operation in this area is limited by RDS(on). 1ms 1ms 1μs DC operation (Ta= C) 1ms Ta= C Single pulse (9mm.1.8mm) RθJA -- Pulse Time Duty Cycle= Single Pulse 1μs Pulse Time, PT -- s Power Dissipation, PD -- W Total Gate Charge, Qg -- nc PD -- Ta 1. (9mm.8mm) Ambient Temperature, Ta -- C (9mm.8mm)
5 MCH484 Package Dimensions MCH484-TL-H / MCH484-TL-W MCPH CASE 419AQ ISSUE O unit : mm 1 : Gate : Source : Drain Recommended Soldering Footprint ORDERING INFORMATION MCH484-TL-H MCH484-TL-W Device Package Shipping Note MCPH SC-,SOT-, pcs. / reel Pb-Free and Halogen Free Note on usage : Since the MCH484 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at /site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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