PIN Diode Dual series Pin Diode for VHF, UHF and AGC 50V, 50mA, rs=max 4.5Ω, MCP
|
|
- Baldric Lindsey
- 5 years ago
- Views:
Transcription
1 Ordering number : EN4401B 1SV49 PIN Diode Dual series Pin Diode for VHF, UHF and AGC 0V, 0mA, rs=max 4.Ω, MCP Features Very small-sized package facilitates high-density mounting and permits 1SV49-applied equipment to be made smaller Small interterminal capacitance (C=0.pF typ) Small forward series resistance (rs=4.ω max) Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Reverse Voltage VR 0 V Forward Current IF 0 ma Allowable Power Dissipation P 0 mw Junction Temperature Tj 1 C Storage Temperature Tstg -- to +1 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 0A SV49-TL-E 0. Product & Package Information Package : MCP JEITA, JEDEC : SC-0, SOT- Minimum Packing Quantity :,000 pcs./reel Packing Type: TL Marking to 0.08 TL LOT No. GV LOT No : Anode : Cathode : Cathode / Anode Electrical Connection MCP 1 Semiconductor Components Industries, LLC, 01 September, 01 1 TKIM/498HA (KT)/196GI/409YH (KOTO) AX-88 No /6
2 1SV49 Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Reverse Voltage VR IR=μA 0 V Reverse Current IR VR=0V 0.1 μa Forward Voltage VF IF=0mA 0.9 V Interterminal Capacitance C VR=0V, f=1mhz 0. pf Series Resistance rs IF=mA, f=0mhz 4. Ω Note : The specifications shown above are for each individual diode. Ordering Information Device Package Shipping memo 1SV49-TL-E MCP,000pcs./reel Pb Free No.4401-/6
3 1SV49 Reverse Current, I R -- na Forward Current, I F -- ma 0.1 IF -- VF Ta=1 C C Forward Voltage, V F -- V IR -- VR Ta= C 0 C -- C ID pf Interterminal Capacitance, C Series Resistance, r s -- Ω C -- VR ID Reverse Voltage, V R -- V rs -- f I F =μa 0μA 1mA Ta= C f=1mhz Ta= C 0.1 C ma 0 1k Reverse Voltage, V R -- V rs -- IF ID0004 Ta= C f=0mhz 0 00 Frequency, f -- MHz ID000 Series Resistance, r s -- Ω Forward Current, I F -- ma ID0006 No.4401-/6
4 1SV49 Embossed Taping Specification 1SV49-TL-E No /6
5 1SV49 Outline Drawing 1SV49-TL-E Land Pattern Example Mass (g) Unit * For reference mm Unit: mm No.4401-/6
6 1SV49 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No /6
50V, 0.5A, Low IR, Monolithic Dual CP Common Cathode
Ordering number : EN611B SB0W0C Schottky Barrier Diode 0V, 0.A, Low IR, Monolithic Dual CP Common Cathode http://onsemi.com Applications Universal-use rectifier High frequency rectification (switching
More informationSBE805. Schottky Barrier Diode 30V, 0.5A, Low IR. Features. Specifications
Ordering number : EN9B SBE80 Schottky Barrier Diode 0V, 0.A, Low IR http://onsemi.com Features Low forward voltage (VF max=0.v) Fast reverse recovery time (trr max=0ns) Composite type with diodes contained
More informationFast reverse recovery time (trr max=10ns) Low switching noise Low leakage current and high reliability due to highly reliable planar structure
Ordering number : ENA040A SB01-1C Schottky Barrier Diode 10V, 0.1A, Low IR, Single CP http://onsemi.com Applications High frequency rectification (switching regulators, converters, choppers) Features Low
More informationSBT700-06RH. Schottky Barrier Diode 60V, 70A, VF; 0.66V Dual To-3PF-3L Cathode Common
Ordering number : ENA16A SBT-6RH Schottky Barrier Diode 6V, A, VF;.66V Dual To-PF-L Cathode Common http://onsemi.com Applications High frequency rectification (switching regulators, converters, choppers)
More informationCPH3910. N-Channel JFET 25V, 20 to 40mA, 40mS, CPH3. Applications. Features. Specifications. For AM tuner RF amplification Low noise amplifier
Ordering number : ENA196A CPH9 N-Channel JFET V, to 4mA, 4mS, CPH http://onsemi.com Applications For AM tuner RF amplification Low noise amplifier Features VGDS: -V max. yfs : 4mS typ. Ciss: 6.pF typ.
More informationSMA3107. MMIC Amplifier, 3V, 6mA, 0.1 to 2.8GHz, MCPH6. Features. Specifications
Ordering number : ENA1753A SMA317 MMIC Amplifier, 3V, 6mA,.1 to 2.8GHz, MCPH6 http://onsemi.com Features High Gain : Gp=23.5 typ. @1GHz Wideband response : fu=2.8ghz Low current : ICC=6mA typ. Port impedance
More informationPlanar Ultrafast Rectifier Fast trr type, 20A, 600V, 50ns, TO-220F-2FS
Ordering number : ENA18A RD006FR Planar Ultrafast Rectifier Fast trr type, 0A, 600V, 0ns, TO-0F-FS http://onsemi.com Features VF=1.V max (IF=0A) VRRM=600V trr=1ns (typ.) Halogen free compliance Specifications
More informationSMA3117. MMIC Amplifiler, 5V, 22.7mA, 0.1 to 3GHz, MCPH6. Features. Specifications
Ordering number : EN8936A SMA3117 MMIC Amplifiler, 5V, 22.7mA,.1 to 3GHz, MCPH6 http://onsemi.com Features High Gain : Gp=33.5 typ. @2.2GHz Wideband response : fu=3.ghz Low current : ICC=22.7mA typ. High
More informationLow-Frequency general-purpose amplifier, impedance conversion, infrared sensor applications
Ordering number : ENA8A TF48 N-Channel JFET V,.6 to.ma,.ms, USFP http://onsemi.com Applications Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features Ultrasmall
More information2SC5374A. RF Transistor 10V, 100mA, ft=5.2ghz, NPN Single SMCP. Features. Specifications
Ordering number : ENA19A SC4A RF Transistor 1V, 1mA, ft=.ghz, NPN Single SMCP http://onsemi.com Features High gain : S1e =1.dB typ (f=1ghz) High cut-off frequency : ft=.ghz typ Specifications Absolute
More information2SC5245A. RF Transistor 10V, 30mA, ft=8ghz, NPN Single MCP. Features. Specifications. : NF=1.4dB typ (f=1.5ghz) High gain
Ordering number : ENA1A SCA RF Transistor 1V, ma, ft=ghz, NPN Single MCP http://onsemi.com Features Low-noise : NF=.9dB typ (f=1ghz) : NF=1.dB typ (f=1.ghz) High gain : S1e =1dB typ (f=1.ghz) High cut-off
More information55GN01FA. RF Transistor 10V, 70mA, ft=5.5ghz, NPN Single SSFP. Features. Specifications
Ordering number : ENA111A GN01FA RF Transistor V, 70mA, ft=.ghz, NPN Single SSFP http://onsemi.com Features High cut-off frequency : ft=.ghz typ High gain : S1e =11dB typ (f=1ghz) =19dB typ (f=400mhz)
More information30A02CH. Bipolar Transistor 30V, 0.7A, Low VCE(sat) PNP Single CPH3. Applications. Features. Specifications
Ordering number : EN8A ACH Bipolar Transistor V,.A, Low VCE(sat) PNP Single CPH http://onsemi.com Applications Low-frequency Amplifier, high-speed switching, small motor drive Features Large current capacitance
More information15C01M. Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single MCP. Applications. Features. Specifications. Low-frequency Amplifier, muting circuit
Ordering number : ENA 1C1M Bipolar Transistor 1V,.A, Low VCE(sat) NPN Single MCP http://onsemi.com Applications Low-frequency Amplifier, muting circuit Features Large current capacity Low collector-to-emitter
More informationSMA3109. MMIC Amplifier, 3V, 16mA, 0.1 to 3.6GHz, MCPH6. Features. Specifications. Low current. : ICC=16mA typ. Absolute Maximum Ratings at Ta=25 C
Ordering number : ENA1749 SMA319 MMIC Amplifier, 3V, 16mA,.1 to 3.6GHz, MCPH6 http://onsemi.com Features High Gain Wideband response Low current High output power Port impedance : Gp=23 typ. @1GHz : fu=3.6ghz
More informationMCH6541. Bipolar Transistor. ( )30V, ( )3A, Low VCE(sat) Complementary Dual MCPH6
Ordering number : EN8949A MCH641 Bipolar Transistor ( )V, ( )A, Low VCE(sat) Complementary Dual MCPH6 http://onsemi.com Applicaitons MOSFET gate drivers, relay drivers, lamp drivers, motor drivers Features
More informationExcellent Power Device Dual buffer driver for general purpose, Dual SOIC8
Ordering number : ENA0421A TND315S Excellent Power Device Dual buffer driver for general purpose, Dual SOIC8 http://onsemi.com Features Dual buffer Withstand voltage of 25V is assured Peak output current
More informationCPH6532. Bipolar Transistor 50V, 1A, Low VCE(sat) NPN Dual CPH6. Applications. Features. Specifications
Ordering number : ENA0A CPH6 Bipolar Transistor 0V, 1A, Low VCE(sat) NPN Dual CPH6 http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers, flash Features Composite type with two NPN
More information3LP01SS. P-Channel Small Signal MOSFET 30V, 0.1A, 10.4Ω, Single SSFP. Features. Specifications. Low ON-resistance High-speed switching 2.
Ordering number : EN6648B LP1SS P-Channel Small Signal MOSFET V,.1A, 1.4Ω, Single SSFP http://onsemi.com Features Low ON-resistance High-speed switching.v drive Specifications Absolute Maximum Ratings
More informationExcellent Power Device Dual inverter driver for general purpose, Dual SOIC8
Ordering number : ENA4A TND314S Excellent Power Device Dual inverter driver for general purpose, Dual SOIC8 http://onsemi.com Features Dual inverter Monolithic structure (High voltage CMOS process adopted)
More informationLow-frequency Amplifer, high-speed switching small motor drive, muting circuit
Ordering number : EN16A CMH Bipolar Transistor V,.A, Low VCE(sat) NPN Single MCPH http://onsemi.com Applications Low-frequency Amplifer, high-speed switching small motor drive, muting circuit Features
More informationHigh-speed switching Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) High allowable power dissipation
Ordering number : EN18B MCH1/MCH Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons DC / DC converters, relay drivers, lamp drivers, motor drivers, flash Features
More information2SD1620. Bipolar Transistor 10V, 3A, Low VCE(sat), NPN Single PCP
Ordering number : EN119D SD16 Bipolar Transistor 1V, A, Low VCE(sat), NPN Single PCP http://onsemi.com Features Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted
More information(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN6D SA141/SC64 Bipolar Transistor (-)1V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
More informationEMH1307. P-Channel Power MOSFET 20V, 6.5A, 26mΩ, Single EMH8. Features. Specifications. Input Capacitance Ciss=1100pF(typ.) Halogen free compliance
Ordering number : ENA11A EMH1 P-Channel Power MOSFET V, 6.A, 6mΩ, Single EMH8 http://onsemi.com Features ON-resistance RDS(on)1 : mω(typ.) 1.8V drive Protection diode in Input Capacitance Ciss=11pF(typ.)
More information(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. Large current capacity High-speed switching
Ordering number : EN8A SA169/SC61 Bipolar Transistor (-)V, (-)1A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT
More informationMMIC Mixer, IIP3=15dBm, MCPH6
Ordering number : ENA1839A MMIC Mixer, IIP3=1dBm, Gc=-0.dB@40MHz, MCPH6 http://onsemi.com Features Wide band : up to Ku band Low distortion : IIP3=20dBm (@ICC > 11mA) SMT, Ultra small package : 2.0 2.1
More information500 mw When mounted on ceramic substrate (250mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C
Ordering number : ENC SA1416/SC646 Bipolar Transistor ( )1V, ( )1A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
More informationStrobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers
Ordering number : EN181B SD168 Bipolar Transistor V, A, Low VCE(sat), NPN Single PCP http://onsemi.com Applications Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers Features
More informationHigh-speed switching Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) High allowable power dissipation
Ordering number : EN811A MCH14/MCH4 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption
More information2SD1835. Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single NP. Applications
Ordering number : EN18B SD18 Bipolar Transistor V, A, Low VCE(sat), NPN Single NP http://onsemi.com Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption
More informationNSVJ3910SB3 N-Channel JFET 25V, 20 to 40mA, 40mS
NSVJ910SB N-Channel JFET 25V, 20 to 40mA, 40mS Automotive JFET designed for compact and efficient designs and including high gain performance. AEC-Q101 qualified JFET and PPAP capable suitable for automotive
More informationECH8660. Power MOSFET 30V, 4.5A, 59mΩ, 30V, 4.5A, 59mΩ, Complementary Dual ECH8. Features. Specifications
Ordering number : ENA18B ECH866 Power MOSFET V, 4.A, 9mΩ, V, 4.A, 9mΩ, Complementary Dual ECH8 http://onsemi.com Features The ECH866 incorporates an N-channel MOSFET and a P-channel MOSFET that feature
More information2SA1418/2SC3648. Bipolar Transistor. ( )160V, ( )0.7A, Low VCE(sat), (PNP)NPN Single PCP. Applicaitons Color TV audio output, inverter
Ordering number : EN188C SA1418/SC648 Bipolar Transistor ( )16V, ( ).A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT
More information3LP01S. P-Channel Small Signal MOSFET 30V, 0.1A, 10.4Ω, Single SMCP. Features. Specifications. Low ON-resistance Ultrahigh-speed switching 2.
Ordering number : EN6681C LP1S P-Channel Small Signal MOSFET V,.1A, 1.4Ω, Single SMCP http://onsemi.com Features Low ON-resistance Ultrahigh-speed switching.v drive Specifications Absolute Maximum Ratings
More information2SA608N/2SC536N. Bipolar Transistor. ( )50V, ( )150mA, Low VCE(sat) (PNP)NPN Single NPA-WA. Applicaitons. Features. Specifications ( ) : 2SA608N
Ordering number : EN64B SA68N/SC6N Bipolar Transistor ( )V, ( )ma, Low VCE(sat) (PNP)NPN Single -WA http://onsemi.com Applicaitons Capable of being used in the low frequency to high frequency range Features
More informationCollector Dissipation Tc=25 C 30 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C
Ordering number : ENA66B SA1 Bipolar Transistor V, A, Low VCE(sat) PNP TO-F-SG http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes Low collector-to-emitter
More informationRelay drivers, high-speed inverters, converters, and other general high-current switching applications
Ordering number : EN9C SB11/SD181 Bipolar Transistor ( )1V, ( )A, Low VCE(sat) (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, high-speed inverters, converters, and other general
More informationCPH6354. Power MOSFET 60V, 100mΩ, 4A, Single P-Channel. Features. Specifications
CPH64 Power MOSFET 6V, 1mΩ, 4A, Single P-Channel Features ON-resistance RDS(on)1=mW(typ.) 4V Drive ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings
More informationAllowable Power Dissipation Tc=25 C 23 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C
Ordering number : ENA14A SFT1446 N-Channel Power MOSFET 6V, A, 1mΩ, Single TP/TP-FA http://onsemi.com Features ON-resistance RDS(on)1=9mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=pF(typ.)
More information2SJ661. P-Channel Power MOSFET 60V, 38A, 39mΩ, TO-262-3L/TO-263-2L. Features. Specifications. ON-resistance RDS(on)1=29.5mΩ(typ.
Ordering number : EN886A SJ661 P-Channel Power MOSFET 6V, 8A, 9mΩ, TO-6-L/TO-6-L http://onsemi.com Features ON-resistance RDS(on)1=9.mΩ(typ.) 4V drive Input capacitance Ciss=46pF (typ.) Specifications
More information2SK4177. N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-263-2L. Features. Specifications. ON-resistance RDS(on)=10Ω(typ.) 10V drive
Ordering number : ENA869A SK41 N-Channel Power MOSFET 1V, A, 1Ω, TO-6-L http://onsemi.com Features ON-resistance RDS(on)=1Ω(typ.) 1V drive Input capacitance Ciss=8pF (typ.) Specifications Absolute Maximum
More informationRelay drivers, high-speed inverters, converters, and other general high-current switching applications
Ordering number : EN8C SB/SD8 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, high-speed inverters, converters, and other general high-current
More informationParameter Symbol Conditions Ratings Unit
Ordering number : ENN8386 Monolithic Linear IC Downconverter IC for Digital CATV http://onsemi.com Overview The is a downconverter IC for digital CATV. It accepts RF input frequencies from 50 to 150MHz
More informationLow collector-to-emitter saturation voltage Large current capacity and wide ASO
Ordering number : EN1F SB11/SD16 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features
More informationValue Parameter Symbol Conditions
Ordering number : ENA2289 FW276 N-Channel Power MOSFET 450V, 0.7A, 12.1Ω, Dual SOIC8 http://onsemi.com Features On-resistance RDS(on)=9.3Ω(typ.) Input capacitance Ciss=55pF(typ.) 10V drive Nch+Nch dual
More information2SD1012. Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA. Specifications. Absolute Maximum Ratings at Ta=25 C
Ordering number : EN066F SD1 Bipolar Transistor 1V, 0.A, Low VCE(sat), NPN Single SPA http://onsemi.com Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Base
More informationATP206. N-Channel Power MOSFET 40V, 40A, 16mΩ, Single ATPAK. Features. Specifications. Low ON-resistance 4.5V drive Halogen free compliance
Ordering number : ENA19A ATP6 N-Channel Power MOSFET 4V, 4A, 16mΩ, Single ATPAK http://onsemi.com Features Low ON-resistance 4.V drive Halogen free compliance Large current Slim package Protection diode
More informationEMH2604. Power MOSFET 20V, 4A, 45mΩ, 20V, 3A, 85mΩ, Complementary Dual EMH8. Features. Specifications
Ordering number : EN96A EMH64 Power MOSFET V, 4A, 4mΩ, V, A, 8mΩ, Complementary Dual EMH8 http://onsemi.com Features Nch + Pch MOSFET ON-resistance Nch : RDS(on)1=4mΩ(typ.) Pch : RDS(on)1=6mΩ(typ.) 1.8V
More information(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN69D SA16/SC69 Bipolar Transistor (-)V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of
More informationECH8663R. N-Channel Power MOSFET 30V, 8A, 20.5mΩ, Dual ECH8. Features. Specifications
Ordering number : ENA1184A ECH866R N-Channel Power MOSFET V, 8A,.mΩ, Dual ECH8 http://onsemi.com Features Low ON-resistance.V drive Common-drain type Protection diode in Built-in gate protection resistor
More information2SK3747. N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-3PF-3L. Features. Specifications
Ordering number : EN6B SK4 N-Channel Power MOSFET 1V, A, 1Ω, TO-PF-L http://onsemi.com Features Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process)
More informationATP114. P-Channel Power MOSFET 60V, 55A, 16mΩ, Single ATPAK. Features. Specifications. ON-resistance RDS(on)1=12mΩ(typ.) 4V drive Protection diode in
Ordering number : ENA111A ATP114 P-Channel Power MOSFET 6V, A, 16mΩ, Single ATPAK http://onsemi.com Features ON-resistance RDS(on)1=1mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4pF(typ.)
More informationProtection diode in Halogen free compliance
Ordering number : ENA14C CPH6444 N-Channel Power MOSFET 6V, 4.A, 8mΩ, Single CPH6 http://onsemi.com Features Low ON-resistance 4V drive Protection diode in Halogen free compliance Specifications Absolute
More informationLow collector-to-emitter saturation voltage Fast switching speed
Ordering number : EN19B SB114/SD164 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment
More informationLarge current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.
Ordering number : ENA18B SC6144SG Bipolar Transistor V, A, Low VCE(sat) NPN TO-F-FS http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current
More informationLow collector to emitter saturation voltage Large current capacity
Ordering number : ENC SB1 Bipolar Transisitor V, A, Low VCE(sat) PNP Single PCP http://onsemi.com Applicaitons DC-DC converters, motor drivers, relay drivers, lamp drivers Features Adoption of FBET, MBIT
More information2SK4124. N-Channel Power MOSFET 500V, 20A, 430mΩ, TO-3P-3L. Features. Specifications
Ordering number : ENA46C SK414 N-Channel Power MOSFET V, A, 4mΩ, TO-P-L http://onsemi.com Features Low ON-resistance, low input capacitance, ultrahigh-speed switching Adoption of high reliability HVP process
More informationTIG067SS. N-Channel IGBT 400V, 150A, VCE(sat);3.8V Single SOIC8. Features. Specifications. TIG 067 LOT No.
Ordering number : ENA16 TIG6SS N-Channel IGBT 4V, 1A, VCE(sat);.8V Single SOIC8 http://onsemi.com Features Low-saturation voltage Enhansment type High speed switching 4.V drive Built-in Gate-to-Emitter
More informationECH8659. Power MOSFET 30V, 24mΩ, 7A, Dual N-Channel
Power MOSFET 30V, 24mΩ, 7A, Dual N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device
More informationHigh Speed Switching ESD Diode-Protected Gate C/W
Ordering number : ENA1559B Power MOSFET 60V, 62mΩ, 12A, Single P-Channel http://onsemi.com Features Low On-Resistance Low Gate Charge Pb-free and RoHS Compliance High Speed Switching ESD Diode-Protected
More informationMCH5541 PNP/NPN Bipolar Transistor ( )30V, ( )700mA, VCE(sat) ; ( 220)190mV (max)
MCH41 PNP/NPN Bipolar Transistor ( )V, ( )ma, VCE(sat) ; ( )19mV (max) Overview MCH41 is ( )V, ( )ma, VCE(sat) ; ( )19mV (max), PNP/NPN in 1 type MCPH, Bipolar Transistor. Electrical Connection Features
More informationHigh-speed switching applications (switching regulator, driver circuit) Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V
Ordering number : ENA9B Bipolar Transistor V, 1A, Low VCE (sat) NPN TO-F-SG http://onsemi.com Applications High-speed switching applications (switching regulator, driver circuit) Features Adoption of MBIT
More informationTc=25 C 3.5 W When mounted on ceramic substrate (600mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg - 55 to +150 C
Ordering number : ENA2294A N-Channel Power MOSFET 60V, 4.5A, 117mΩ, Single PCP http://onsemi.com Features On-resistance RDS(on)1=92mΩ(typ.) 4V drive Protection Diode in Halogen free compliance Specifications
More information125 C/W. Value Parameter Symbol Conditions
Power MOSFET 250V, 6.5Ω, 350mA, Single N-Channel Features On-Resistance RDS(on)1=5Ω (typ) 2.5V Drive Pb-Free, Halogen Free and RoHS Compliance ESD Diode - Protected Gate Low Ciss and High Speed Switching
More informationMCH6662. Power MOSFET 20V, 160mΩ, 2A, Dual N-Channel. Features. Specifications
MCH666 Power MOSFET V, 16mΩ, A, Dual N-Channel Features ON-Resistance Nch : RDS(on)1=1mW (typ) 1.8V Drive ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum
More informationCPH3455. Power MOSFET 35V, 104mΩ, 3A, Single N-Channel
Power MOSFET 35V, 104mΩ, 3A, Single N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
More information10 pf VDS=5V, VGS=0V, f=1mhz Reverse Transfer Capacitance Crss 3.0 pf Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1khz 1.5 db
SK1 N-Channel JFET 1V,. to ma, ms Applications AM Tuner RF Amp, Low-noise Amp HF Low-noise Amp Features Adoption of FBET Process Large yfs Small Ciss Very Low Noise Figure Specifications Absolute Maximum
More information2SK596S. JFET 20V, 150 to 350µA, 1.0mS, N-Channel. Features. Specifications
SK596S JFET V, 15 to 5µA, 1.mS, N-Channel Features Low output noise voltage : VNO= -11dB max (VCC=4.5V, RL=1kW, Cin=15pF, VIN=V, A curve) Especiallysuited for use in condenser microphone for audio equipments
More informationThis product is designed to ESD immunity < 200V*, so please take care when handling. * Machine Model
1HN4CH Power MOSFET V, 8Ω, ma, Single N-Channel http://onsemi.com Features 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta = C Parameter Symbol Conditions Value Unit Drain
More informationCPH3360. Power MOSFET 30V, 303mΩ, 1.6A, Single P-Channel
Power MOSFET 30V, 303mΩ, 1.6A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
More information5LN01C. N-Channel Small Signal MOSFET 50V, 0.1A, 7.8Ω, Single CP. Features. Specifications. Low ON-resistance Ultrahigh-speed switching 2.
Ordering number : EN6C LN1C N-Channel Small Signal MOSFET V,.1A,.8Ω, Single CP http://onsemi.com Features Low ON-resistance Ultrahigh-speed switching.v drive Specifications Absolute Maximum Ratings at
More informationBBS3002. P-Channel Power MOSFET 60V, 100A, 5.8mΩ, TO-263-2L/TO-263. Features. Specifications TO-263
Ordering number : ENA1C BBS P-Channel Power MOSFET 6V, 1A,.8mΩ, TO-6-L/TO-6 http://onsemi.com Features ON-resistance RDS(on)1=4.4mΩ (typ.) Input capacitance Ciss=1pF (typ.) 4V drive TO-6 Specifications
More informationMCH4009. RF Transistor 3.5V, 40mA, ft=25ghz, NPN Single MCPH4. Features. Specifications
Ordering number : ENA089A MCH4009 RF Transistor.5V, 40mA, ft=25ghz, NPN Single MCPH4 http://onsemi.com Features Low-noise use : NF=1.1dB typ (f=2ghz) High cut-off frequency : ft=25ghz typ (VCE=V) Low operating
More informationMCH6664. P-Channel Power MOSFET 30V, 1.5A, 325mΩ, Dual MCPH6. Features
Ordering number : ENA81A MCH6664 P-Channel Power MOSFET V, 1.A, mω, Dual MCPH6 http://onsemi.com Features ON-resistance Pch : RDS(on)1=mW (typ.) 4V drive Halogen free compliance Specifications Absolute
More information6HP04MH. P-Channel Small Single MOSFET 60V, 370mA, 4.2Ω Single MCPH3. Features. Specifications Absolute Maximum Ratings at Ta=25 C
Ordering number : ENA68A 6HP4MH P-Channel Small Single MOSFET 6V, ma, 4.Ω Single MCPH http://onsemi.com Features 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings
More informationLA6581DM. Fan Motor Driver BLT Driver Single-Phase Full-Wave
Ordering number : ENA2264 Monolithic Linear IC Fan Motor Driver BLT Driver Single-Phase Full-Wave Overview The is a low-saturation BTL output linear driving motor driver for single-phase bipolar fan motors.
More information1HP04CH. Small Signal MOSFET 100V, 18Ω, 170mA, Single P-Channel
Small Signal MOSFET 100V, 18Ω, 170mA, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance.
More informationELECTRICAL CONNECTION
Power MOSFET 30V, 215mΩ, 2.0A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
More informationParameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGSS ±30 V
Ordering number : ENAC SK98FS N-Channel Power MOSFET V, A,.Ω, TO-F-FS http://onsemi.com Features ON-resistance RDS(on)=.8Ω (typ.) V drive Input capacitance Ciss=pF (typ.) Repetitive avalanche guarantee
More information2SK4087LS-1E
Ordering number : ENAE SK48LS N-Channel Power MOSFET 6V, 14A, 61mΩ, TO-F-FS http://onsemi.com Features ON-resistance RDS(on)=.4Ω (typ.) 1V drive Input capacitance Ciss=1pF (typ.) Specifications Absolute
More informationSMP3003. P-Channel Power MOSFET 75V, 100A, 8.0mΩ, TO-263-2L/TO-263. Features. Specifications TO-263
Ordering number : ENA16D SMP P-Channel Power MOSFET V, 1A, 8.mΩ, TO-6-L/TO-6 http://onsemi.com Features ON-resistance RDS(on)1=6.mΩ (typ.) Input capacitance Ciss=14pF (typ.) 4V drive TO-6 Specifications
More informationMCH3382. Power MOSFET 12V, 198mΩ, 2A, Single P-Channel
Power MOSFET 12V, 198mΩ, 2A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
More informationMCH3383. Power MOSFET 12V, 69mΩ, 3.5A, Single P-Channel
Power MOSFET 12V, 69mΩ, 3.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
More informationSCH1436. Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel
Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and ultra
More informationMCH6331. Power MOSFET 30V, 98mΩ, 3.5A, Single P-Channel
Power MOSFET 30V, 98mΩ, 3.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
More informationCPH6443. Power MOSFET 35V, 37mΩ, 6A, Single N-Channel
Power MOSFET 35V, 37mΩ, 6A, Single N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
More informationOverview The LA1225MC is a Low-voltage operation (1.8V or higher) FM IF detector IC for the electronic tuning system.
Ordering number : ENA2052 LA1225MC Monolithic Linear IC FM IF Detector IC http://onsemi.com Overview The LA1225MC is a Low-voltage operation (1.8V or higher) FM IF detector IC for the electronic tuning
More information2SC5994 Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single
Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single Features Adoption of MBIT Process Low Collector to Emitter Saturation Large Current Capacity High Speed Switching ELECTRICAL CONNECTION 2 Typical Applications
More informationLA1654C. Function RF amplifier, rectifier, detector, time code output, and standby circuit.
Ordering number : ENA0205A Monolithic Linear IC Time Code Reception IC http://onsemi.com Overview The time code reception IC receives long-wave time standard broadcasts (such as the Japanese JJY and German
More informationNGTB20N60L2TF1G. N-Channel IGBT 600V, 20A, VCE(sat);1.45V TO-3PF-3L with Low VF Switching Diode
Ordering number : ENA2196 N-Channel IGBT 600V, 20A, VCE(sat);1.45V TO-3PF-3L with Low VF Switching Diode http://onsemi.com Features IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) IGBT tf=67ns typ. Diode VF=1.5V
More informationMBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes
, Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,
More informationFFSP1065A/D. Silicon Carbide Schottky Diode 650 V, 10 A Features. FFSP1065A Silicon Carbide Schottky Diode. Description.
FFSP65A Silicon Carbide Schottky Diode 65 V, A Features Max Junction Temperature 75 o C Avalanche Rated 6 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationNSVF5501SK RF Transistor for Low Noise Amplifier
RF Transistor for Low Noise Amplifier 10 V, 70 ma, f T =. GHz typ. RF Transistor This RF transistor is designed for RF amplifier applications. SSFP package is contribute to down size of application because
More informationMCH3484. Power MOSFET 20V, 40mΩ, 4.5A, Single N-Channel. Electrical Connection N-Channel
MCH484 Power MOSFET V, 4mΩ, 4.A, Single N-Channel Features On-Resistance RDS(on)1=m (typ).9v Drive Pb-Free, Halogen Free and RoHS Compliance ESD Diode - Protected Gate Electrical Connection N-Channel Specifications
More information1.05 W epoxy board Operating temperature Topr 20 to +100 C Storage temperature Tstg 55 to +150 C
Monolithic Digital IC Direct PWM Drive Brushless Motor Predriver IC Overview The LB11696V is a direct PWM drive predriver IC designed for threephase power brushless motors. A motor driver circuit with
More informationNSVF6003SB6/D. RF Transistor 12 V, 150 ma, ft = 7 GHz, NPN Single
NSVFSB RF Transistor 1 V, 1 ma, ft = GHz, NPN Single This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has
More informationMMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes
MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF
More informationNVC6S5A444NLZ. Power MOSFET. 60 V, 78 m, 4.5 A, N Channel
Power MOSFET 6 V, 78 m,.5 A, N Channel Automotive Power MOSFET designed to minimize gate charge and low on resistance. AEC Q qualified MOSFET and PPAP capable suitable for automotive applications. Features.5
More informationBAV103 High Voltage, General Purpose Diode
BAV3 High Voltage, General Purpose Diode Cathode Band SOD80 Description A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless
More information