SP1255P Series 0.5pF, 12kV Diode Array for μusb

Transcription

1 TVS Diode Arrays (SPA Diodes Low Capacitance ESD and Surge Protection -.pf, 2kV Diode Array for μusb RoHS Pb GREEN Description The SP2P integrates 3 channels of ultra-low capacitance steering diodes and a low voltage TVS diode to provide maximum protection of the USB data and ID pins against ESD per the IEC6-4-2 standard. An additional 2V TVS diode is included to provide lightning surge protection for the USB V BUS pin up to A (t P =8/2μs per the IEC6-4- standard. The SP2P provides superior protection for current intensive applications such as fast charging peripharals. The SP2P comes in a space saving 2.x.8mm μdfn package with a typical height of.mm making it an ideal solution for smart phones, tablets, and other portable electronics. Pinout Features AEC-Q qualified Bottom View For USB Voltage Bus Pin (V BUS ESD, IEC6-4-2, ±3kV contact, ±3kV air EFT, IEC6-4-4, 8A (t P =/ns Lightning, IEC6-4-, A (t P =8/2μs Protection for V BUS operating up to 2V Benchmark setting protection High current handling capability for fast charging applications For USB Data Pin (D+, D-, ID ESD, IEC6-4-2, ±2kV contact, ±kv air EFT, IEC6-4-4, 4A (t P =/ns Lightning, IEC6-4-, 4A (t P =8/2μs.pF capacitance Low clamping voltage and dynamic resistance (.3Ω Functional Block Diagram PIN 2 (D+ PIN 3 (D- PIN 4 (ID PIN (V BUS Applications USB 2. USB OTG μusb Protection for the V BUS circuit on USB2. Fast Charging PIN,6 (GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 62

2 TVS Diode Arrays (SPA Diodes Low Capacitance ESD and Surge Protection - Absolute Maximum Ratings Symbol Parameter Value Units (Pin Peak Current (t p =8/2μs A (Pin 2-4 Peak Current (t p =8/2μs 4 A T OP Operating Temperature -4 to 2 C T STOR Storage Temperature - to C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T OP =2ºC SP32 Parameter Symbol Test Conditions Min Typ Max Units USB V BUS (Pin Reverse Standoff Voltage WM Pin to GND 2 V Reverse Breakdown Voltage V BR I T =ma, Pin to GND V Reverse Leakage Current I LEAK =2V, Pin to GND. µa Forward Voltage V F I F =ma, GND to Pin.6.7. V I Clamp Voltage PP =3A, t p =8/2µs, Fwd 6. 8 V V C =A, t p =8/2µs, Fwd 9. 2 V IEC6-4-2 (Contact ±3 kv ESD Withstand Voltage V ESD IEC6-4-2 (Air ±3 kv Diode Capacitance C D Reverse Bias=V, f=mhz 3 2 pf USB D+, D-, ID (Pin 2, 3, 4 Reverse Standoff Voltage WM Pin 2, 3 and 4 to GND 4 V Reverse Breakdown Voltage V BR I T =2µA, Pin 2, 3 and 4 to GND V =2V, Pin 2, 3 and 4 to GND.2 Reverse Leakage Current I LEAK =4V, Pin 2, 3 and 4 to GND. µa I Clamp Voltage PP =A, t p =8/2µs, Fwd V V C =2A, t p =8/2µs, Fwd V Dynamic Resistance R DYN TLP, t P =ns, Pin 2, 3 and 4 to GND 2.3 Ω IEC6-4-2 (Contact ±2 kv ESD Withstand Voltage V ESD IEC6-4-2 (Air ± kv Diode Capacitance C I/O-GND Reverse Bias=V, f=mhz..6 pf Note: Parameter is guaranteed by design and/or device characterization. 2 Transmission Line Pulse (TLP Test Setting: t P =ns, t r =.2ns I TLP and V TLP averaging window: star t =7ns to t 2 =9ns Capacitance vs. Reverse Bias (Pin to GND Capacitance vs. Reverse Bias (Pin2, 3, 4 to GND Capacitance (pf Capacitance (pf Bias Voltage (V Bias Voltage (V 2 63

3 TVS Diode Arrays (SPA Diodes Low Capacitance ESD and Surge Protection - Non-Repetitive Peak Pulse Power vs. Pulse Duration (Pin to GND Non-Repetitive Peak Pulse Power vs. Pulse Duration (Pin2, 3, 4 to GND Peak Pulse Power -P pp (kw.. Pulse Duration tp(µs Peak Pulse Power -Ppp (W. Pulse Duration -tp( µs Clamping Voltage vs. Peak Pulse Current (Pin to GND Clamping Voltage vs. Peak Pulse Current (Pin2, 3, 4 to GND Clamp Voltage (V C Peak Pulse Current -IPP (A Clamp Voltage (V C Peak Pulse Current -IPP (A Positive Transmission Line Pulsing (TLP Plot (Pin 2, 3, 4 to GND Negative Transmission Line Pulsing (TLP Plot (Pin 2, 3, 4 to GND TLP Current (A TLP Volts (V TLP Current (A TLP Volts (V 3 64

4 Temperature TVS Diode Arrays (SPA Diodes Low Capacitance ESD and Surge Protection - Soldering Parameters Reflow Condition - Temperature Min (T s(min C Pb Free assembly T P Ramp-up t P Critical Zone TL to TP Pre Heat - Temperature Max (T s(max 2 C - Time (min to max (t s 6 8 secs Average ramp up rate (Liquidus Temp (T L to peak T S(max to T L - Ramp-up Rate 3 C/second max 3 C/second max T L T S(max T S(min t S Preheat t L Ramp-down Reflow - Temperature (T L (Liquidus 27 C - Temperature (t L 6 seconds 2 time to peak temperature Time Peak Temperature (T P 26 +/- C Time within C of actual peak Temperature (t p 2 4 seconds Ramp-down Rate 6 C/second max Time 2 C to peak Temperature (T P 8 minutes Max. Do not exceed 26 C Part Numbering System TVS Diode Arrays (SPA Diodes Series Part Marking System Product Series = SP2P A SP 2P U T G A G3 G= Green T= Tape & Reel Package U=µDFN-6 Assembly Site Product Characteristics Lead Plating Pre-Plated Frame Lead Material Copper Alloy Lead Coplanarity.4 inches (.2mm Substrate material Silicon Body Material Molded Epoxy Flammability UL 94 V- Notes :. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.. Package surface matte finish VDI -3. Ordering Information Part Number Package Marking Min. Order Qty. Packaging Option P/P Packaging Specification SP2PUTG µdfn-6 A G3 3 Tape & Reel 8mm tape/7 reel 2mm/4mm EIA RS

5 Y TVS Diode Arrays (SPA Diodes Low Capacitance ESD and Surge Protection - Package Dimensions µdfn-6 (.8x2.x.mm Top View µdfn6 (.8x2.x.mm JEDEC MO-229 B Symbol Millimeters Inches Min Nom Max Min Nom Max Side View Bottom View C N J X P Recommended Soldering Footprint Z F G A A A3. Ref.6 Ref D E b L D E e.4 BSC.6 BSC e.8 BSC.3 BSC B C F G J N P X Y Z Notes:. Dimension and tolerancing comform to ASME Y4.M Controlling dimensions: Millimeter. Converted Inch dimensions are not necessarily exact. Embossed Carrier Tape & Reel Specification µdfn-6 Symbol Millimeters P P2 W P D D F E ø ø7. ø.37 ø A.9 +/-. B 2.3 +/-. D. +. D Ø.6 +. E.7 +/-. F 3. +/-. K.7 +/-. P 2. +/-. P 4. +/-. P2 4. +/-. T.2 +/-.2 W / A T ø.7 Pin Location K B ø8. 66