STPSC10H V power Schottky silicon carbide diode. Description. Features
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1 650 V power Schottky silicon carbide diode Datasheet - production data Features No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability Insulated package: TO-220AC Ins Insulated voltage: 2500 VRMS sine Typical package capacitance: 7 pf Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. Symbol IF(AV) VRRM Table 1: Device summary Value 10 A 650 V Tj (max.) 175 C February 2017 DocID Rev 7 1/14 This is information on a product in full production.
2 Characteristics STPSC10H065 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 650 V IF(RMS) Forward rms current 22 A IF(AV) IFRM IFSM Average forward current Repetitive peak forward current Surge non repetitive forward current TO-220AC, DPAK, D²PAK, TC = 135 C (1), DC TO-220AC Ins, TC = 85 C (1), DC TO-220AC, DPAK, D²PAK, Tc = 135 C (1), Tj = 175 C, δ = 0.1 TO-220AC Ins, Tc = 85 C (1), Tj = 175 C, δ = 0.1 tp = 10 ms sinusoidal, Tc = 25 C 90 tp = 10 ms sinusoidal, Tc = 125 C 80 tp = 10 µs square, Tc = 25 C A 41 A Tstg Storage temperature range -55 to +175 C Tj Operating junction temperature (2) -40 to +175 C A Notes: (1) Value based on Rth(j-c) max. (2) (dptot/dtj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Parameter Value Typ. Max. Unit Rth(j-c) Junction to case TO-220AC, DPAK, D²PAK TO-220AC Ins C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) VF (2) Reverse leakage current Forward voltage drop Notes: (1) Pulse test: tp = 10 ms, δ < 2% (2) Pulse test: tp = 500 µs, δ < 2% Tj = 25 C VR = VRRM Tj = 150 C Tj = 25 C IF = 10 A Tj = 150 C µa V To evaluate the conduction losses, use the following equation: P = 1.35 x IF(AV) x IF 2 (RMS) 2/14 DocID Rev 7
3 Table 5: Dynamic electrical characteristics Characteristics Symbol Parameter Test conditions Typ. Unit QCj (1) Total capacitive charge VR = 400 V 28.5 nc Cj Notes: Total capacitance (1) V Most accurate value for the capacitive charge: Q cj = OUT C J (V R ) dv 0 R VR = 0 V, Tc = 25 C, F = 1 MHz 480 VR = 400 V, Tc = 25 C, F = 1 MHz 48 pf DocID Rev 7 3/14
4 Characteristics 1.1 Characteristics (curves) Figure 1: Forward voltage drop versus forward current (typical values, low level) I F (A) Pulse test : t p=500µs T a=25 C T a=100 C T a=150 C T a=175 C 2 VF(V) STPSC10H065 Figure 2: Forward voltage drop versus forward current (typical values, high level) I F (A) Pulse test : t p=500µs T a=100 C T a=150 C T a=25 C 10 T a=175 C VF(V) Figure 3: Reverse leakage current versus reverse voltage applied (typical values) Figure 4: Peak forward current versus case temperature (TO-220AC, DPAK, D²PAK) I R (µa) 1.E+03 1.E+02 T j =175 C 1.E+01 T j =150 C 1.E+00 1.E-01 T j =25 C VR(V) 1.E Figure 5: Peak forward current versus case temperature (TO-220AC Ins) Figure 6: Junction capacitance versus reverse voltage applied (typical values) C j (pf) 500 V R (V) F=1 MHz V OSC =30 mv RMS T j =25 C /14 DocID Rev 7
5 Figure 7: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC, DPAK and D²PAK) Characteristics Figure 8: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC Ins) Z th(j-c) /R th(j-c) Single pulse tp(s) E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Z th(j-c) /R th(j-c) Single pulse 0.1 t p(s) E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+03 Figure 9: Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) I FSM (A) Figure 10: Total capacitive charges versus reverse voltage applied (typical values) Q cj (nc) T a =25 C 24 1.E+02 T a =125 C t p (s) 1.E+01 1.E-05 1.E-04 1.E-03 1.E-02 4 V R (V) Figure 11: Thermal resistance junction to ambient versus copper surface under tab for D²PAK package (typical values) R th(j-a) ( C/W) 20 Epoxy printed board FR4, e CU = 35 µm 10 S Cu(cm²) DocID Rev 7 5/14
6 Package information STPSC10H065 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 N m Maximum torque value: 0.7 N m 2.1 TO-220AC package information Figure 12: TO-220AC package outline 6/14 DocID Rev 7
7 Package information Table 6: TO-220AC package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A C D E F F G H L typ typ. L L L L L M 2.6 typ typ. Diam DocID Rev 7 7/14
8 Package information 2.2 TO-220AC Ins package information Figure 13: TO-220AC Ins package outline STPSC10H065 Table 7: TO-220AC Ins package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A a typ typ. a B b b C c c e F ØI /14 DocID Rev 7
9 Package information 2.3 DPAK package information Figure 14: DPAK package outline _A_21 DocID Rev 7 9/14
10 Package information STPSC10H065 Table 8: DPAK mechanical data Dimensions Dim. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A A A b b c c D D E E e e H L (L1) L L R V Figure 15: DPAK recommended footprint (dimensions are in mm) 10/14 DocID Rev 7
11 2.4 D²PAK package information Figure 16: D²PAK package outline Package information DocID Rev 7 11/14
12 Package information STPSC10H065 Table 9: D²PAK package mechanical data Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A A b b c c D D D E E E e e H J L L L R V Figure 17: D²PAK recommended footprint (dimensions are in mm) 12/14 DocID Rev 7
13 Ordering information 3 Ordering information Table 10: Ordering information Order code Marking Package Weight Base qty. Delivery mode STPSC10H065G-TR STPSC10H065G D²PAK 1.48 g 1000 Tape and reel STPSC10H065D STPSC10H065D TO-220AC 1.86 g 50 Tube STPSC10H065DI STPSC 10H065DI TO-220AC Ins 2.12 g 50 Tube STPSC10H065B-TR PSC10 H065 DPAK 0.32 g 2500 Tape and reel 4 Revision history Table 11: Document revision history Date Revision Changes 31-Aug First issue. 10-Oct Added Max. value to Table Nov Updated Figure 1, Figure 2, Figure 13, Figure 14 and Table Jan Added TO-220AC Ins package. 22-Jul Updated Table 10 and reformatted to current standard. 10-Dec Inserted package name on cover page. 06-Feb Updated D²PAK package section. DocID Rev 7 13/14
14 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved 14/14 DocID Rev 7
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