STH160N4LF6-2. N-channel 40 V, mω typ., 120 A, STripFET VI DeepGATE Power MOSFET in a H²PAK-2 package. Features. Applications.
|
|
- Bruce Hubbard
- 5 years ago
- Views:
Transcription
1 N-channel 40 V, mω typ., 120 A, STripFET VI DeepGATE Power MOSFET in a H²PAK-2 package Features Datasheet - production data Order code V DS R DS(on) max I D P TOT TAB 40 V Ω 120 A 150 W 2 1 H 2 PAK-2 3 R DS(on) * Q g industry benchmark Extremely low on-resistance R DS(on) Logic level drive High avalanche ruggedness 100% avalanche tested Applications Figure 1. Internal schematic diagram Switching applications Description This device is an N-channel Power MOSFET developed using the 6 th generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. Table 1. Device summary Order code Marking Package Packaging 160N4LF6 H 2 PAK-2 Tape and reel April 2014 DocID Rev 1 1/17 This is information on a product in full production.
2 Contents Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /17 DocID Rev 1
3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 40 V V GS Gate-source voltage ± 20 V I D Drain current (continuous) at T C = 25 C 120 A I D Drain current (continuous) at T C = 100 C 100 A (1) I DM Drain current (pulsed) 480 A P TOT Total dissipation at T C = 25 C 150 W Derating factor 1 W/ C I AS Avalanche current, repetitive or not-repetitive (pulse width limited by T jmax ) 60 A E AS Single pulse avalanche energy 323 mj T stg T j Storage temperature Operating junction temperature 1. Pulse width is limited by safe operating area -55 to 175 C Table 3. Thermal resistance Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 1.0 C/W R thj-a Thermal resistance junction-ambient max 62.5 C/W DocID Rev 1 3/17 17
4 Electrical characteristics 2 Electrical characteristics (T CASE = 25 C unless otherwise specified). Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage (V GS = 0) Zero gate voltage drain current (V GS = 0) I D = 250 μa 40 - V V DS = 20 V - 1 μa V DS = 20 V, Tc = 125 C 10 μa Gate body leakage current I GSS V (V DS = 0) GS = ± 20 V - ±100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 μa 1 - V R DS(on) Static drain-source on-resistance V GS = 10 V, I D = 60 A Ω V GS = 5 V, I D = 60 A Ω Table 5. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit C iss Input capacitance pf C oss Output capacitance V DS = 20 V, f=1 MHz, pf C rss V GS = 0 V Reverse transfer capacitance pf Q g Total gate charge V DD = 20 V, I D = 60 A nc Q gs Gate-source charge V GS = 10 V nc Q gd Gate-drain charge (see Figure 14) nc Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time ns t V DD = 20 V, I D = 60 A, r Rise time ns R G = 4.7 Ω, V GS = 10 V t d(off) Turn-off delay time ns (see Figure 15) t f Fall time ns 4/17 DocID Rev 1
5 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current A I (1) SDM Source-drain current (pulsed) A V (2) SD Forward on voltage I SD = 120 A, V GS = V t rr Reverse recovery time I SD = 120 A, - 57 ns Q rr Reverse recovery charge di/dt = 100 A/μs, V DD = 32 V - 53 nc I RRM Reverse recovery current (see Figure 17) A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID Rev 1 5/17 17
6 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ID (A) 100 Operation in this area is Limited by max RDS(on) Tj=175 C Tc=25 C Single pulse AM15854v1 100µs 10 1ms 10ms VDS(V) ID (A) 250 Figure 4. Output characteristics AM15797v1 V GS = 6, 7, 8, 9, 10 V V GS = 5 V Figure 5. Transfer characteristics ID (A) 250 VDS= 0.6V AM15798v1 200 V GS = 4 V V GS = 3 V VDS(V) Figure 6. Gate charge vs gate-source voltage VGS(V) Figure 7. Static drain-source on-resistance VGS (V) VDD=20V 12 ID=60V AM15799v1 RDS(on) (mω) 1.80 VGS=10V AM15800v Qg(nC) ID(A) 6/17 DocID Rev 1
7 Electrical characteristics Figure 8. Capacitance variations C (pf) AM15801v VDS(V) Ciss Coss Crss Figure 10. Normalized gate threshold voltage vs temperature Figure 9. Normalized V (BR)DSS vs temperature V(BR)DSS (norm) 1.1 ID=250 µa TJ( C) Figure 11. Normalized on-resistance vs temperature AM15802v1 VGS(th) (norm) AM15803v1 RDS(on) (norm) AM15804v ID=250 µa 2 VGS=10V TJ( C) TJ( C) Figure 12. Source-drain diode forward characteristics VSD (V) TJ=-55 C AM15805v TJ=25 C TJ=150 C ISD(A) DocID Rev 1 7/17 17
8 Test circuits 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD VGS VD RG RL D.U.T μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit G 25 Ω D S A D.U.T. B A FAST DIODE B A B D L=100μH μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 8/17 DocID Rev 1
9 Test circuits Figure 19. Gate charge waveform Vds Id Vgs Vgs(th) Qgs1 Qgs2 Qgd DocID Rev 1 9/17 17
10 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 10/17 DocID Rev 1
11 Package mechanical data Figure 20. H²PAK-2 drawing _C DocID Rev 1 11/17 17
12 Package mechanical data Table 8. H²PAK-2 mechanical data Dim. mm Min. Typ. Max. A A C e E F H H L L L L L M R V /17 DocID Rev 1
13 Package mechanical data Figure 21. H²PAK-2 recommended footprint (dimensions are in mm) _C DocID Rev 1 13/17 17
14 Packaging mechanical data 5 Packaging mechanical data Figure 22. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E K0 B0 F W A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v2 14/17 DocID Rev 1
15 Packaging mechanical data REEL DIMENSIONS Figure 23. Reel 40mm min. T Access hole At sl ot location D B C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Table 9. H²PAK-2 leads tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W DocID Rev 1 15/17 17
16 Revision history 6 Revision history Table 10. Document revision history Date Revision Changes 24-Apr First release. 16/17 DocID Rev 1
17 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America DocID Rev 1 17/17 17
STB120N10F4, STP120N10F4
STB120N10F4, STP120N10F4 N-channel 100 V, 8 mω typ., 120 A, STripFET DeepGATE Power MOSFETs in D 2 PAK and TO-220 packages Features Datasheet production data TAB TAB Order codes V DS R DS(on) max. I D
More informationN-channel 30 V, Ω typ., 6 A STripFET VI DeepGATE Power MOSFET in a SOT23-6L package. Features. Description. Table 1.
N-channel 30 V, 0.02 Ω typ., 6 A STripFET VI DeepGATE Power MOSFET in a SOT23-6L package Features Datasheet - production data Order code V DSS R DS(on) max I D P TOT 4 5 6 2 SOT23-6L 3 STT6N3LLH6 30 V
More informationAutomotive-grade N-channel 24 V, 0.95 mω typ., 180 A STripFET III Power MOSFET in a H 2 PAK-6 package. Features. Description. Table 1.
Automotive-grade N-channel 24 V, 0.95 mω typ., 180 A STripFET III Power MOSFET in a H 2 PAK-6 package Features Datasheet production data TAB Order code V DSS R DS(on) max. I D (1) STH300NH02L-6 24 V
More informationN-channel 100 V, Ω typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package. Features. Description. Table 1.
N-channel 100 V, 0.062 Ω typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package Features Datasheet - production data Order code V DS R DS(on) max I D 1 2 3 STL3N10F7 100 V 0.07 Ω 4 A 1
More informationP-channel 30 V, Ω typ., 12 A, STripFET VI DeepGATE Power MOSFET in a DPAK package. Features V GS = 10 V. R DS(on) * Q g industry benchmark
P-channel 30 V, 0.024 Ω typ., 12 A, STripFET VI DeepGATE Power MOSFET in a DPAK package Features Datasheet - production data TAB Order code V DSS R DS(on) max I D P TOT DPAK 2 1 3 STD26P3LLH6 30 V 0.030
More informationN-channel 75 V, Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package. Order codes Marking Package Packaging
Features N-channel 75 V, 0.0092 Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package Datasheet production data Type V DSS R DS(on) max I D TAB STP75N75F4 75 V < 0.011 Ω 78 A N-channel enhancement
More informationFeatures. Application. Description. Table 1. Device summary. Order code Marking Package Packaging. STP80NF12 P80NF12 TO-220 Tube
N-channel 120 V, 0.013 Ω typ., 80 A, STripFET II Power MOSFET in a TO-220 package Features Datasheet - production data TAB Type V DSS R DS(on) max STP80NF12 120 V < 0.018 Ω 80 A I D TO-220 1 2 3 Exceptional
More informationN-channel 500 V, Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package. Features. Description. Table 1. Device summary
N-channel 500 V, 0.035 Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package Features Datasheet - production data Order code V DSS (@T jmax ) R DS(on) max I D STW60NM50N 550 V
More informationSTI260N6F6 STP260N6F6
STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A STripFET VI DeepGATE Power MOSFET in TO-220 and I²PAK packages Features Order codes V DSS R DS(on) max I D STI260N6F6 STP260N6F6 60 V < 0.003 Ω 120
More informationN-channel 40 V, 0.03 Ω typ., 30 A, STripFET II Power MOSFET in a DPAK package. Order code Marking Package Packaging
STD3NF4LT N-channel 4 V,.3 Ω typ., 3 A, STripFET II Power MOSFET in a DPAK package Features Datasheet production data Order code V DSS R DS(on) max I D STD3NF4LT 4 V
More informationSTD25NF10LA. N-channel 100 V, Ω, 25 A DPAK STripFET II Power MOSFET. Features. Applications. Description
N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code V DSS R DS(on) max I D STD25NF10LA 100 V < 0.035 Ω 25 A Exceptional dv/dt capability 100% avalanche tested Logic level device
More informationSTH310N10F7-2, STH310N10F7-6
N-channel 100 V, 1.9 mω typ., 180 A STripFET VII DeepGATE Power MOSFET in H 2 PAK-2 and H 2 PAK-6 packages Features Datasheet - production data Order codes V DS R DS(on) max. I D TAB TAB STH310N10F7-2
More informationSTD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7
STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 Ω typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H 2 PAK-2 and TO-220 Datasheet - production data TAB TAB DPAK
More informationN-channel 100 V, Ω typ., 110 A, STripFET F7 Power MOSFET in a H 2 PAK-2 package. Features. Description. Table 1.
N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET F7 Power MOSFET in a H 2 PAK-2 package Features Datasheet production data Order code V DS R DS(on)max I D P TOT STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W
More informationSTL75N8LF6. N-channel 80 V, 5.6 mω, 18 A, PowerFLAT 5x6 STripFET VI DeepGATE Power MOSFET. Features. Applications. Description
N-channel 80 V, 5.6 mω, 18 A, PowerFLAT 5x6 STripFET VI DeepGATE Power MOSFET Features Order code V DSS R DS(on) max STL75N8LF6 80 V < 7.4 mω 18 A (1) 1. The value is rated according R thj-pcb I D R DS(on)
More informationN-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-220FP package. Features. Description. AM15572v1
STF1N6M2 N-channel 6 V,.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-22FP package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STF1N6M2 65 V.6 Ω 7.5 A TO-22FP
More informationN-channel 60 V, 1.7 mω typ., 180 A STripFET VI DeepGATE Power MOSFET in H²PAK-6 package. Features. Description. Table 1.
N-channel 60 V, 1.7 mω typ., 180 A STripFET VI DeepGATE Power MOSFET in H²PAK-6 package Features Datasheet - preliminary data Order code V DS R DS(on) max I D TAB 1 1 H 2 PAK-6 7 STH260N6F6-6 60 V 2.4
More informationContents STL13NM60N Contents 1 Electrical ratings Electrical characteristics
N-channel 600 V, 0.320 Ω typ., 10 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Features Datasheet - production data Figure 1. Internal schematic diagram Order code V DS @ T jmax R DS(on) max.
More informationSTB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4
STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4 N-channel 100 V, 0.015 Ω, 60 A, STripFET DeepGATE Power MOSFET in TO-220, DPAK, TO-247, D 2 PAK Features Type V DSS R DS(on) max I D STB70N10F4 100 V < 0.0195
More informationSTB270N4F3 STI270N4F3
STB270N4F3 STI270N4F3 N-channel 40 V, 1.6 mω, 160 A, D 2 PAK, I 2 PAK STripFET III Power MOSFET Features Type V DSS R DS(on) max I D P TOT STB270N4F3 40 V < 2.0 mω 160 A 330 W STI270N4F3 40 V < 2.6 mω
More informationN-channel 100 V, Ω typ., 16 A STripFET VII DeepGATE Power MOSFETs in a PowerFLAT 5x6 package. Features. Order code. Description.
STL90N10F7 N-channel 100 V, 0.009 Ω typ., 16 A STripFET VII DeepGATE Power MOSFETs in a PowerFLAT 5x6 package Features Datasheet - preliminary data Order code V DS @ T Jmax R DS(on) max STL90N10F7 100
More informationSTB7ANM60N, STD7ANM60N
STB7ANM60N, STD7ANM60N Automotive-grade N-channel 600 V, 5 A, 0.84 Ω typ., MDmesh II Power MOSFETs in D 2 PAK and DPAK packages Features Datasheet - production data Order codes V DS @ T jmax R DS(on) max.
More informationSTS10N3LH5. N-channel 30 V, Ω, 10 A, SO-8 STripFET V Power MOSFET. Features. Application. Description
STSN3LH5 Nchannel 30 V, 0.019 Ω, A, SO8 STripFET V Power MOSFET Features Type V DSS R DS(on) max I D STSN3LH5 30 V 0.021 Ω A R DS(on) * Q g industry benchmark Extremely low onresistance R DS(on) Very low
More informationN-channel 600 V, Ω typ., 13 A MDmesh II Plus low Q g Power MOSFET in a TO-220FP package. Features. Description. AM15572v1
STF18N6M2 N-channel 6 V,.255 Ω typ., 13 A MDmesh II Plus low Q g Power MOSFET in a TO-22FP package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STF18N6M2 65 V.28 Ω 13 A
More informationDual P-channel 100 V, Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island. Features
Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island Features Datasheet - production data 1 Order code V DS R DS(on) max. I D 4 STL13DP10F6 100 V
More informationSTD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S
STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features Order codes V DSS R DS(on) max I D STD60N3LH5 30 V 0.008 Ω
More informationN-channel 100 V, Ω typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package. Features. Description. Table 1.
STL60N10F7 N-channel 100 V, 0.013 Ω typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features Datasheet - production data 1 2 3 4 PowerFLAT 5x6 Figure 1. Internal schematic diagram
More informationSTB18N60M2, STP18N60M2, STP18N60M2. N-channel 600 V, Ω typ., 13 A MDmesh II Plus low Q g Power MOSFET in D 2 PAK, TO-220 and TO-247 packages
STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Q g Power MOSFET in D 2 PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features 2 3 1 D PAK Order
More informationFeatures. Order codes STB24N60DM2 STW24N60DM2. Description. AM01476v1. Table 1. Device summary. Order codes Marking Package Packaging
STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus low Q g Power MOSFETs in D 2 PAK, TO-220 and TO-247 packages Datasheet production data TAB TAB Features D 2 PAK
More informationSTF13N60M2, STFI13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus low Q g Power MOSFETs in TO-220FP and I 2 PAKFP packages Features Datasheet production data Order codes V DS @ T Jmax R DS(on) max I D STF13N60M2 STFI13N60M2
More informationSTB120N4LF6 STD120N4LF6
STB120N4LF6 STD120N4LF6 Nchannel 40 V, 3.1 mω, 80 A DPAK, D²PAK STripFET VI DeepGATE Power MOSFET Features Order codes V DSS R DS(on) max I D STB120N4LF6 40 V 4.0 mω 80 A STD120N4LF6 40 V 4.0 mω 80 A Logic
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N7F6 110N7F6 TO-220 Tube
N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max. I D P TOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W TO-220
More informationSTD100N10F7, STF100N10F7, STP100N10F7
STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet - production data TAB Features DPAK TAB Order
More informationN-channel 400 V, 3 Ω typ., 1.8 A SuperMESH3 Power MOSFET in a SOT-223 package. Features. Application. Description. AM01476v1. Table 1.
N-channel 400 V, 3 Ω typ., 1.8 A SuperMESH3 Power MOSFET in a SOT-223 package Features Datasheet - production data Order code V DS R DS(on) max I D P TOT 4 1 2 3 SOT-223 Figure 1. Internal schematic diagram
More informationFeatures. Order code V DS R DS(on) max I D P TOT. Description. Table 1. Device summary. Order code Marking Packages Packaging
N-channel 2 V,.25 Ω typ., 2.3 A STripFET H5 Power MOSFET in a SOT-23 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 3 STR2N2VH5 2 V.3 Ω (V GS =4.5 V) 2.3 A.35 W 1 SOT-23
More informationSTD65N55LF3 Features Order code DS(on) DSS max. DPAK Application Description Figure 1. Internal schematic diagram
Nchannel 55 V, 7.0 mω, 80 A DPAK STripFET III Power MOSFET Features Order code V DSS R DS(on) max. I D Pw 55 V < 8.5 mω 80 A 110 W Low threshold drive 100% avalanche tested Application Switching applications
More informationSTB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE Power MOSFET in D 2 PAK, DPAK, TO-220FP and TO-220 Datasheet - production data TAB TAB Features
More informationI D. Order codes Marking Package Packaging. STP80NF10 TO-220 Tube STB80NF10T4 D²PAK Tape and reel
STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D 2 PAK low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015
More informationSTF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus low Q g Power MOSFETs in TO-220FP, I 2 PAK, TO-220 and TO-247 packages Datasheet - production data TAB
More informationN-channel 100 V, Ω typ., 21 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package 21 A 5 W. Order code Marking Package Packaging
Nchannel 100 V, 0.005 Ω typ., 21 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features Datasheet preliminary data Type V DSS R DS(on) max I D P TOT 100 V 0.006 Ω (V GS = 10 V) 21 A
More informationFeatures. Description. AM15572v1. Table 1. Device summary. Order code Marking Package Packaging. STD7N65M2 7N65M2 DPAK Tape and reel
N-channel 650 V, 0.98 Ω typ., 5 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet - production data TAB Order code V DS R DS(on) max STD7N65M2 650 V 1.15 Ω 5 A I D DPAK 1 3 Extremely low gate
More informationSTF24N60M2, STFI24N60M2, STFW24N60M2
STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus low Q g Power MOSFETs in TO-220FP, I 2 PAKFP and TO-3PF packages Features Datasheet production data Order codes V
More informationSTL60N3LLH5. N-channel 30 V, Ω, 17 A PowerFLAT (5x6) STripFET V Power MOSFET. Features. Application. Description.
Nchannel 30 V, 0.0063 Ω, 17 A PowerFLAT (5x6) STripFET V Power MOSFET Features Type V DSS R DS(on) max 30 V
More informationDual N-channel 30 V, Ω, 11 A PowerFLAT (5x6) double island, STripFET V Power MOSFET. Order code Marking Package Packaging
Dual Nchannel 30 V, 0.016 Ω, 11 A PowerFLAT (5x6) double island, STripFET V Power MOSFET Features Preliminary data Type V DSS R DSo(n) I D 30 V < 0.018 Ω 11 A (1) 1. The value is rated according R thjpcb
More informationN-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh M2 Power MOSFETs in D 2 PAK and DPAK packages. Features. Description. AM15572v1. Table 1.
STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh M2 Power MOSFETs in D 2 PAK and DPAK packages Features Datasheet - production data Order code V DS @ T Jmax R DS(on) max I D TAB 1 3 2 D
More informationSTN4NF06L. N-channel 60 V, 0.07 Ω, 4 A SOT-223 STripFET II Power MOSFET. Features. Applications. Description
Nchannel 60 V, 0.07 Ω, 4 A SOT223 STripFET II Power MOSFET Features Order code V DSS R DS(on) max I D STN4NF06L 60 V < 0.1 Ω 4 A 2 Exceptional dv/dt capability Avalanche rugged technology 100% avalanche
More informationSTP4NK60Z, STP4NK60ZFP
STP4NK60Z, STP4NK60ZFP N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH Power MOSFETs in TO-220 and TO-220FP packages Features Datasheet - production data Order codes V DS R DS(on) max. P TOT
More informationN-channel 100 V, Ω typ., 19 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package. Features. Description.
STL100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features Datasheet - production data Order code V DSS R DS(on) max I D P TOT 1 2 STL100N10F7
More informationN-channel 30 V, Ω typ., 10 A, P-channel 30 V, Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package. Features STL40C30H3LL
N-channel 30 V, 0.019 Ω typ., A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Features Datasheet - production data Order code Channel V DS R DS(on) max I D
More informationSTP20NM65N STF20NM65N
STP20NM65N STF20NM65N N-channel 650 V, 0.250 Ω, 15 A TO-220, TO-220FP second generation MDmesh Power MOSFET Features Order codes V DSS @T jmax R DS(on) max. I D STP20NM65N STF20NM65N 710 V 0.270 Ω 15 A
More informationObsolete Product(s) - Obsolete Product(s)
2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type V DSS R DS(on) max I D 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A Low Q g Low threshold
More informationSTS4DNF60L. N-channel 60 V, Ω, 4 A, SO-8 STripFET Power MOSFET. Features. Application. Description
Nchannel 60 V, 0.045 Ω, 4 A, SO8 STripFET Power MOSFET Features Type V DSS R DS(on) I D STS4DNF60L 60V
More informationSTB18NM80, STF18NM80, STP18NM80, STW18NM80
Features STB18NM80, STF18NM80, STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Order codes V DSS R DS(on)
More informationSTB55NF06, STP55NF06, STP55NF06FP
N-channel 60 V, 0.015 Ω, 50 A STripFET II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet production data Features Order code V DSS R DS(on) max. I D STB55NF06 STP55NF06 60 V < 0.018 Ω 50
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packaging. STB100N6F7 100N6F7 D²PAK Tape and Reel
N-channel 60 V, 4.7 mω typ.,100 A STripFET F7 Power MOSFET in a D²PAK package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STB100N6F7 60 V 5.6 mω 100A 125 W Among the lowest
More informationSTF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages Datasheet production data Features
More informationN-channel 450 V Ω typ., 0.6 A Zener-protected, SuperMESH3 Power MOSFET in a SOT-223 package. Features. Description.
N-channel 45 V - 3.3 Ω typ.,.6 A Zener-protected, SuperMESH3 Power MOSFET in a SOT-223 package Features Datasheet - production data 4 1 2 3 SOT-223 Figure 1. Internal schematic diagram Order code V DSS
More informationN-channel 1050 V, 6 Ω typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages. Features STU2N105K5. Description.
STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data TAB Features DPAK 1 3 Order codes V DS R DS(on)
More informationSTD10NM60ND, STF10NM60ND STP10NM60ND
STD10NM60ND, STF10NM60ND STP10NM60ND N-channel 600 V, 0.57 Ω, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode) Features Order codes STD10NM60ND STF10NM60ND STP10NM60ND V DSS @T J max
More informationSTW57N65M5, STWA57N65M5
STW57N65M5, STWA57N65M5 N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packages Features Datasheet - production data Order codes V DS @ T Jmax R DS(on) max I
More informationFeatures. Description. AM01476v1. Table 1. Device summary. Order codes Marking Package Packaging. STW70N60M2 70N60M2 TO-247 Tube
N-channel 600 V, 0.03 Ω typ., 68 A MDmesh M2 Power MOSFET in a TO-247 package Features Datasheet production data Order codes V DS @ T Jmax R DS(on) max I D STW70N60M2 650 V 0.040 Ω 68 A TO-247 1 2 3 Extremely
More informationN-channel 20 V, Ω, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package. Order code Marking Package Packaging
N-channel 20 V, 0.002 Ω, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package Features Order code V DSS R DS(on) max I D 20 V < 0.003 Ω 28 A Improved die-to-footprint ratio Very low profile package Very
More informationN-channel 650 V, Ω typ., 42 A, MDmesh V Power MOSFET in a TO247-4 package. Features. Higher V DS rating. Description.
N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh V Power MOSFET in a TO247-4 package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STW57N65M5-4 710 V 0.063 Ω 42 A Higher V DS
More informationN-channel 650 V, Ω typ., 58 A, MDmesh V Power MOSFET in a TO247-4 package. Features. Higher V DS rating. Description.
N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh V Power MOSFET in a TO247-4 package Features Datasheet - production data Order code V DS @ T Jmax R DS(on) max I D STW69N65M5-4 710 V 0.045 Ω 58 A Higher V DS
More informationSTF20NK50Z, STP20NK50Z
Features N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected in TO-220FP and TO-220 packages Datasheet production data Order codes V DSS R DS(on) max I D P TOT TAB STF20NK50Z STP20NK50Z
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 55 V, 1.8 mω, 200 A, PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) max Conduction losses reduced Low profile, very low parasitic inductance Application Switching applications
More informationFeatures. Description. AM01476v1. Table 1. Device summary. Order code Marking Packages Packaging. STF6N95K5 6N95K5 TO-220FP Tube
N-channel 950 V, 1 Ω typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STF6N95K5 950 V 1.25 Ω 9 A 25 W TO-220FP 1 2 3 Figure
More informationAutomotive grade N-channel 500 V, 0.23 Ω, 17 A, Zener-protected SuperMESH Power MOSFET in a D 2 PAK package. Features
Automotive grade N-channel 500 V, 0.23 Ω, 17 A, Zener-protected SuperMESH Power MOSFET in a D 2 PAK package Features Datasheet - production data TAB 3 1 D²PAK Figure 1. Internal schematic diagram D(2)
More informationSTB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND N-channel 600 V, 0.097 Ω typ., 29 A FDmesh II Power MOSFET (with fast diode) in D 2 PAK, TO-220FP, TO-220 and TO-247 Datasheet production data TAB Features
More informationN-channel 20 V, Ω typ., 5 A STripFET V Power MOSFET in SOT-23 and SOT23-6L packages. Order codes V DS R DS(on) max I D P TOT 4
STR2N2VH5, STT5N2VH5 Nchannel 20 V, 0.025 Ω typ., 5 A STripFET V Power MOSFET in SOT23 and SOT236L packages Features Datasheet preliminary data Order codes V DS R DS(on) max I D P TOT 4 3 STR2N2VH5 0.03
More informationFeatures. Switching applications Figure 1. Internal schematic diagram. Description. AM15572v1. . Table 1. Device summary
N-channel 500 V, 0.325 Ω typ.,10 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet - production data Order code V DS R DS(on) max I D TAB DPAK 1 3 STD12N50M2 500 V 0.38 Ω 10 A Extremely low
More informationFeatures STB4N62K3 STD4N62K3. Description. AM01476v1. Table 1. Device summary. Order code Marking Packages Packaging
STB4N62K3, STD4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFETs in D²PAK and DPAK packages Features Datasheet - production data Order codes V DS R DS(on) max. I D P W TAB TAB STB4N62K3
More informationN-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus low Q g Power MOSFET in a PowerFLAT 5x6 HV package. Features. Description.
N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus low Q g Power MOSFET in a PowerFLAT 5x6 HV package Features Datasheet - production data Order code V DS @ T Jmax R DS(on) max I D 650 V 0.86 Ω 4.8 A 1
More informationObsolete Product(s) - Obsolete Product(s)
Features N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected in D²PAK package Datasheet obsolete product Type V DSS R DS(on) max Extremely high dv/dt capability 100% avalanche tested Gate
More informationSTD96N3LLH6. N-channel 30 V, Ω, 80 A, DPAK STripFET VI DeepGATE Power MOSFET. Features. Application. Description
Nchannel 30 V, 0.0037 Ω, 80 A, DPAK STripFET VI DeepGATE Power MOSFET Features Type V DSS R DS(on) max I D STD96N3LLH6 30 V 0.0042 Ω 80 A R DS(on) * Q g industry benchmark Extremely low onresistance R
More informationSTB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N N-channel 600 V, 0.26 Ω typ., 13 A MDmesh II Power MOSFET in D 2 PAK, TO-220FP, TO-220 and TO-247 Features TAB Datasheet production data Order codes STB18NM60N
More informationSTB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5
STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh K5 Power MOSFETs in D 2 PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data TAB Features TAB 1
More informationSTP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description
N-channel 100 V - 0.115 Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP14NF10 100 V < 0.13 Ω 15 A Exceptional dv/dt capability 100% avalanche tested
More informationSTP16N65M2, STU16N65M2
STP16N65M2, STU16N65M2 N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STP16N65M2 710
More informationSTFW3N150, STH3N150-2, STP3N150, STW3N150
STFW3N150, STH3N150-2, STP3N150, STW3N150 N-channel 1500 V, 6 Ω typ., 2.5 A, PowerMESH Power MOSFET in TO-3PF, H 2 PAK-2, TO-220 and TO-247 packages Features Datasheet production data Order codes V DS
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 30 V, 0.012 Ω, 8 A - PowerFLAT (3.3x3.3) ultra low gate charge STripFET Power MOSFET Features Type V DSS R DS(on) I D 30V
More informationSTB160N75F3 STP160N75F3 - STW160N75F3
STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK STripFET Power MOSFET Features Type V DSS R DS(on) (max.) I D STB160N75F3 75V 3.7 mω 120 A (1) STP160N75F3
More informationSTP40NF12. N-channel 120V Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET. General features. Description. Internal schematic diagram
N-channel 120V - 0.028Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP40NF12 120V
More informationSTB80NF55-08T4 STP80NF55-08, STW80NF55-08
STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D 2 PAK, TO-247 STripFET Power MOSFET Features Type V DSS R DS(on) max STB80NF55-08T4 55 V < 0.008 Ω 80 A STP80NF55-08
More informationSTD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet production data TAB Features TAB
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type V DSSS R DS(on) max I D 100 V < 0.065 Ω 23 A Exceptional dv/dt capability 100% avalanche tested Application oriented
More informationSTD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND
STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 Ω, 10 A, FDmesh II Power MOSFET I 2 PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes V DSS (@T jmax )R DS(on) max I D STD11NM60ND
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packaging. STL6N3LLH6 STG1 PowerFLAT 2x2 Tape and reel
Nchannel 30 V, 0.02 Ω typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 2x2 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 2 3 STL6N3LLH6 30 V 0.025Ω (V GS= 0 V) 0.04Ω
More informationSTB16NF06L. N-channel 60V Ω - 16A - D 2 PAK STripFET Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.07Ω - 16A - D 2 PAK STripFET Power MOSFET General features Type V DSS R DS(on) I D STB16NF06L 60V
More informationSTB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5
STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A SuperMESH 5 Power MOSFET in D 2 PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data TAB Features TAB
More informationAutomotive-grade dual N-channel 100 V, 25 mω typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package.
STL8DN10LF3 Automotive-grade dual N-channel 100 V, 25 mω typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package Features Datasheet production data Order code V DS R DS(on) max I
More informationSTD7N60M2, STP7N60M2, STU7N60M2
Datasheet N-channel 600 V, 0.86 Ω typ., 5 A, MDmesh M2 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB TAB Features DPAK 1 3 TAB TO-220 1 2 3 Order codes V DS @ T Jmax R DS(on) max. I D STD7N60M2 STP7N60M2
More informationN-channel 30 V Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET I D. Order code Marking Package Packaging
N-channel 30 V - 0.0032 Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET Features Type V DSS R DS(on) max STL100NH3LL 30 V
More informationSTS10P4LLF6. P-channel 40 V, Ω typ., 10 A, StripFET F6 Power MOSFET in SO-8 package. Applications. Description. Features
P-channel 40 V, 0.0125 Ω typ., 10 A, StripFET F6 Power MOSFET in SO-8 package Datasheet - production data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
More informationSTV300NH02L. N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET. Features. Applications. Description
N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) I D STV300NH02L 24V 0.001Ω 280A R DS(on) *Q g industry s benchmark Conduction losses reduced Low profile, very
More informationSTB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1
STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH Power MOSFETs in D²PAK, I²PAK, DPAK and IPAK packages Datasheet - production data TAB TAB Features
More informationSTB21NK50Z. N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET. Features. Applications. Description
N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET Features Type V DSS R DS(on) max I D Pw STB21NK50Z 500 V < 0.27 Ω 17 A 190 W Extremely high dv/dt capability 100% avalanche
More informationSTB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet
STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mω typ., 80 A STripFET F7 Power MOSFETs in D 2 PAK, DPAK, TO-220FP, I 2 PAK and TO-220 packages TAB TAB Features
More information100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected
Datasheet N-channel 620 V, 1.7 Ω typ., 3.8 A MDmesh K3 Power MOSFET in DPAK package Features TAB Order codes V DS R DS(on) max. I D P TOT 2 3 1 DPAK D(2, TAB) STD4N62K3 620 V 2 Ω 3.8 A 70 W 100% avalanche
More informationSTF6N65K3, STFI6N65K3, STU6N65K3
N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, IPAK Features Datasheet production data Order codes V DSS R DS(on) max. I D Ptot STF6N65K3 STFI6N65K3 650 V < 1.3 Ω 5.4
More information