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1 TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM rr (yp) VF (max) FEATURES AND BENEFITS 3 A 1200 V 65 ns 1.7 V SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZA- TION AND RECTIFICATION ULTRA-FAST, SOFT RECOVERY VERY LOW OVERALL POWER LOSSES AND PARTICULARY LOW FORWARD VOLTAGE HIGH FREQUENCY OPERATION HIGH REVERSE VOLTAGE CAPABILITY DESCRIPTION TURBOSWITCH 1200V drasically cus losses in all high volage operaions which require exremely fas, sof and noise-free power diodes. Due o heir opimized swiching performances hey also highly decrease power losses in any associaed swiching IGBT or MOSFET in all "freewheel mode" operaions. K DPAK NC They are paricularly suiable in moor conrol circuiries, or in primary of SMPS as snubber, clamping or demagneizing diodes. They are also suiable for he secondary of SMPS as high volage recifier diodes. ABSOLUTE RATINGS (limiing values) Symbol Parameer Value Uni VRRM Repeiive peak reverse volage 1200 V VRSM Non repeiive peak reverse volage 1200 V IF(RMS) RMS forward curren 6 A IFRM Repeiive peak forward curren p = 5 µs F = 5kHz square 35 A IFSM Surge non repeiive forward curren p = 10ms sinusoidal 25 A Tsg Sorage emperaure range - 65 o C Tj Maximum operaing juncion emperaure 125 C A TURBOSWITCH is a rademark of STMicroelecronics November Ed: 4A 1/8
2 THERMAL AND POWER DATA Symbol Parameer Tess condiions Value Uni Rh (j-c) Juncion o case hermal resisance 6.5 C/W P1 Conducion power dissipaion IF(AV) = 3A, δ = W Tc = 80 C Pmax Toal power dissipaion Tc = 76 C 7.5 W Pmax = P1 + P3 (P3 = 10% P1) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameer Tess condiions Min. Typ. Max. Uni VF ** Forward volage drop IF = 3 A Tj = 25 C 1.8 V IF = 3 A Tj = 125 C IR * Reverse leakage curren VR = 0.8 Tj = 25 C 20 µa X VRRM Tj = 125 C µa Vo Threshold volage Ip < 3.IAV Tj = 125 C 1.15 V rd Dynamic resisance 185 mω Tes pulses : * p = 380 µs, δ < 2% ** p = 5 ms, δ < 2% To evaluae he maximum conducion losses use he following equaion : P = Vo x IF(AV) + rd x IF 2 (RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol Parameer Tes condiions Min. Typ. Max. Uni rr Tj = 25 C IF= 0.5A IR=1A Irr= 0.25A 65 ns IF= 1A dif/d= 50A/µs 115 VR= 30V IRM Maximum recovery curren Tj = 125 C IF= 3A VR= 600V dif/d = -16A/µs dif/d = -50A/µs 6.0 S facor Sofness facor Tj = 125 C VR= 600V IF= 3A dif/d = -50A/µs TURN-ON SWITCHING 3.6 A Symbol Parameer Tes condiions Min. Typ. Max. Uni fr Forward recovery Tj = 25 C 900 ns ime IF=3A dif/d = 16A/µs VFP Peak forward volage Measured a 1.1 x VFmax 35 V 2/8
3 Fig. 1: Conducion losses versus average curren. Fig. 2: Forward volage drop versus forward curren (maximum values) P1(W) δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 1 IF(av) (A) Fig. 3: Relaive variaion of hermal impedance juncion o case versus pulse duraion Zh(j-c)/Rh(j-c) δ = 0.5 δ = 0.2 δ = Single pulse p(s) δ=p/t p 0.0 1E-3 1E-2 1E-1 1E+0 Fig. 5: Reverse recovery ime versus dif/d (90% confidence) T VFM(V) 1E rr(ns) IF=IF(av) IF=2*IF(av) VR=600V E+1 1E+1 1E+0 1E IFM(A) IRM(A) VR=600V Tj=25 C Fig. 4: Peak reverse recovery curren versus dif/d (90% confidence). IF=2*IF(av) IF=IF(av) Fig. 6: Sofness facor b/a versus dif/d (ypical values). S facor IF<2*IF(av) VR=600V /8
4 Fig. 7: Relaive variaion of dynamic parameers versus juncion emperaure (reference: ). Fig. 8: Transien peak forward volage versus dif/d (90% confidence) S facor VFP(V) IF=IF(av) Tj( C) Fig. 9: Forward recovery ime versus dif/d (90% confidence) fr(ns) IRM VFR=1.1*VF max. IF=IF(av) /8
5 APPLICATION DATA The 1200V TURBOSWITCH TM series has been designed o provide he lowes overall power losses in all frequency or high pulsed curren operaions. In such applicaion (fig. A o D), he way of calculaing he power losses is given below : CONDUCTION LOSSES in he diode Fig. A : "FREEWHEEL MODE". TOTAL LOSSES due o he diode P = P1+ P2+ P3+ P4+ P5 REVERSE LOSSES in he diode SWITCHING TRANSISTOR Was SWITCHING LOSSES in he diode DIODE: TURBOSWITCH SWITCHING LOSSES in he diode due o he diode V R T IL F=1/T =/T LOAD 5/8
6 APPLICATION DATA (Con d) Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE. PWM T F = 1/T = /T Fig. D : RECTIFIER DIODE. Fig. E : STATIC CHARACTERISTICS. VR I I F Rd I R VO V F V Conducion losses : P1 = V0 x IF(AV) + Rd x IF 2 (RMS) Reverse losses : P2 = VR x IR x (1 - δ) 6/8
7 APPLICATION DATA (Con d) Fig. F : TURN-OFF CHARACTERISTICS. V IL TRANSISTOR I Turn-on losses : (in he ransisor, due o he diode) P5 = V R I RM 2 (3+2 S) F 6 x di F d + V R I RM I L (S + 2) F 2 dif d I V I V Fig. G : TURN-ON CHARACTERISTICS. I F 0 V Fp di F/d I RM di F /d V F di F /d = V R /L I RM rr = a + b S=b/a a a b rr = a + b b di R/d di R/d DIODE S = b / a RECTIFIER OPERATION I Fmax V R VR Turn-off losses : P3 = V 2 R I RM S F 6 x di F d Turn-off losses : wih non negligible serial inducance P3 = VR IRM 2 S F + L IRM 2 F 6 x di F d 2 P3, P3 and P5 are suiable for power MOSFET and IGBT Turn-on losses : P4 = 0.4 (VFP - VF) x IFmax x fr x F 1.1V F V F 0 fr 7/8
8 PACKAGE MECHANICAL DATA DPAK FOOTPRINT DIMENSIONS (in millimeers) DIMENSIONS REF. Millimeers Inches Min. Max Min. Max. A A A B B C C D E G H L yp yp. L V Ordering ype Marking Package Weigh Base qy Delivery mode A312 DPAK 0.3g 75 Tube -TR A312 DPAK 0.3g 2500 Tape & reel Epoxy mees UL94,V0 Informaion furnished is believed o be accurae and reliable. However, STMicroelecronics assumes no responsibiliy for he consequences of use of such informaion nor for any infringemen of paens or oher righs of hird paries which may resul from is use. No license is graned by implicaion or oherwise under any paen or paen righs of STMicroelecronics. Specificaions menioned in his publicaion are subjec o change wihou noice. This publicaion supersedes and replaces all informaion previously supplied. STMicroelecronics producs are no auhorized for use as criical componens in life suppor devices or sysems wihou express wrien approval of STMicroelecronics. The ST logo is a regisered rademark of STMicroelecronics 1999 STMicroelecronics - Prined in Ialy - All righs reserved. STMicroelecronics GROUP OF COMPANIES Ausralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Ialy - Japan - Malaysia Mala - Morocco - Singapore - Spain - Sweden - Swizerland - Unied Kingdom - U.S.A. hp:// 8/8
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