Exam Write down one phrase/sentence that describes the purpose of the diodes and constant current source in the amplifier below.
|
|
- Brittney Hicks
- 5 years ago
- Views:
Transcription
1 Exam 3 Name: Score /94 Question 1 Short Takes 1 point each unless noted otherwise. 1. Write down one phrase/sentence that describes the purpose of the diodes and constant current source in the amplifier below. Answer: Reduction of cross-over distortion 2. What is the maximum theoretical efficiency for a class-b amplifier? Answer: 78% 3. Many BJT datasheets do not list explicitly, but list an equivalent h-parameter instead. What is this parameter? Answer: 4. Consider a frequency. How many octaves higher is the frequency? Answer: Each octave means a doubling in frequency. Thus, we have to find. Substituting values gives ( ) ( ) octaves. in 5. Consider a frequency. How many decades higher is the frequency? Answer: Each decade means a frequency higher. Thus, we have to find in. Substituting values gives ( ) decades. 1
2 6. The small-signal output resistance of a BJT biased at = 1 ma is100k. What is when the transistor is biased at? Answer: is inversely-proportional to ( ) so that will be smaller at 5 ma, or. 7. A MOSFET has rated power of 25 W at an ambient temperature and a maximum specified junction temperature of 105 o C. What is the thermal resistance between the case and the junction? Answer: 8. What does SOA in the context of power transistors stand for? Answer: Safe Operating Area 9. True or false: if class-a amplifiers are not carefully biased, they will suffer from crossover distortion. Answer: False 10. Identify the false statement (a) FETs do not suffer from thermal runaway, but BJTs do (b) Everything else being equal, BJTs have an order of magnitude more gain than FETs (c) BJT technology has superior performance in power application when compared to the modern MOS technology, which explains why BJTs are still widely incorporated in power designs. Answer: (c) is false 11. An engineer designs a MOSFET-based class-ab amplifier to deliver 6.25 W (sinusoidal) signal power to a resistive load. What is the required peak-to-peak voltage swing across the load? (2 points) Answer:, so that, so that 2
3 12. In the circuit below, what is the maximum current that can flow through? Make reasonable assumptions. (2 points) Answer. Assume that for, ( ). Thus, will turn on and starve from additional base current when the current through (which is also the current through ) is 13. Consider the current mirror below, and neglect base currents. What is? (2 points) Answer: 14. In the current mirrors below, neglect the base currents. What is? (2 points) Answer: 3
4 15. In the circuit below. Estimate the midband gain. (2 points) (a) (b) (c) (d) Need additional information Answer: (b) 16. A BJT has rated power of 115 W at and maximum allowable junction temperature. It is mounted on a heat sink with. It is dissipating 5 W at an ambient temperature. What is the temperature of the heat sink? (2 points) (a) Need additional information (b) (c) (d) Answer: 5 W through the heat sink will elevate the sink s temperature by = above the ambient, so the answer is (c). 17. Estimate assuming and. (2 points) (a) (b) (c) (d) (e) Need additional information Answer: Using BJT scaling the resistance looking into the transistors base is about and assuming and this about 7.3K. This is in parallel with the 82K and 22K resistors, so (d) is the correct answer. 4
5 18. Consider a first-order RC low-pass filter with 3-dB frequency. What is the phase shift in degrees at 50 Hz? (2 points) Answer: The phase shift at 60 Hz is and increases at / decade. 50 Hz is ( ) decades higher than 60 Hz. (The negative sign implies 50 Hz is 0.08 decades before 60 Hz.) Thus, the phase shift is. An alternate and more accurate calculation is ( ). 19. The following circuit has a time-constant of. What is the attenuation (in db) at (3 points) Answer. This is a 1 st order low-pass network with a corner frequency of ( ). The attenuation is 20 db/decade above and 30 khz is 2 decades higher than 300 Hz. Thus, the network will attenuate at 40 db at 30 khz. An alternate calculation is ( ( ) ). 20. In the circuit below and all the capacitors are large enough to be considered shorts. Estimate the midband gain (3 points) (a) (b) (c) (d) ( ) ( ) Answer: (d) 5
6 21. In the circuit below and all the capacitors are large enough to be considered shorts. Estimate the midband gain (3 points) (a) (b) (c) (d) ( ) Answer: ( ), so (b) is the answer. 6
7 Question 2 For the BJT amplifier below, determine and. For the Si transistor,, and assume the transistor is operating in the forward active mode. (6 points) Replace the base bias network with its Thevenin equivalent network as shown below. For a Si transistor,. Now However, ( ) so that ( ) ( ) ( )( )( ) Solving yields. From this follows ( ) 7
8 Question 3 Consider the amplifier shown. Neglect the BJTs internal capacitances. Estimate the 3-dB frequency and the midband gain and then make a plot of the frequency response. You can assume and that. Further,. (15 points) Hint: using BJT scaling concepts will greatly simplify your work. Note that ( ) ( ). Turn off the input voltage and use BJT scaling to determine the resistance looking back into the emitter: ( ) sees ( ) and the circuit time constant is ( )( ) ( )( ) = 10 ms, so that ( ). Using BJT scaling, the resistance looking into the base at midband frequencies is ( )( ) ( )( ) The parallel combination of and is much larger than so the amplifier does not load the input. Since this is a CC amplifier,. The Bode plot is shown below. 8
9 Question 4 Consider a BJT with a rated power of 115 W at, and a maximum allowable junction temperature. The transistor is mounted on a heat sink with parameters, and. Determine how much power the BJT can safely dissipate at an ambient temperature of. (12 points) The thermal resistance from the device/junction to the case is not given explicitly, so we need to determine it before proceeding. The BJT is rated at 115 W at and a thermal model and the calculation of is then ( ) ( ) (3 points) Now we can determine the maximum allowable power dissipation when the BJT is mounted on a heat skink with the given parameters. A thermal model for the problem is shown below. ( ) ( ) (9 points) 9
10 Question 5 Consider the circuit below. The duty cycle and frequency of the 555 astable is 60% and 10 khz respectively. (a) Specify a value for to ensure that the average current through the IR diode does not exceed 30 ma (4 points) (b) Explain (2 sentences maximum) the purpose of the decoupling capacitor (1 point) (c) Give a reasonable value for the decoupling capacitor (1 point) Part (a) The peak current must be ( ). This value will give an average of 30 ma with a 60% on time. Assuming the ( ) for the BJT, then. Choose the closest standard value of. Part (b) When the FET switches, large current spikes may appear on the supply rail, which can propagate into the IC and disturb its operation. The decoupling capacitor provides a local reservoir of energy, and ensures a clean power supply rail. Part (c) A good first try would be. 10
11 Question 6 In the following circuit, the three transistors are matched and in the same thermal environment. Determine the values for and to produce an output current of 0.4 ma. You may ignore base currents and make reasonable assumptions about V BE. (6 points) The voltage across the diode-strapped transistors is and we ignore base currents, so the voltage drop across the base-emitter of the output transistor is, and the voltage drop across is. Assume V BE = 0.7 V, so that and ( ) 11
12 Question 7 For the amplifier below,. Determine, and estimate. (8 points) Hint, use BJT scaling. Since is large,. Then and. Using BJT scaling: and This is an Emitter Follower, so ( ) ( )( ) 12
13 Question 8 Consider the amplifier shown. The maximum power the transistor may dissipate is, and. (a) Determine a load resistance so maximum power is delivered it. (b) For, determine the signal power dissipated in the load For the power calculations, neglect the base currents (8 points) Part (a) The transistor will dissipate the maximum power (25 W) when. From this follows that and. Part (b) The gain of the amplifier is ( )( )( ), so that the amplitude of the signal output voltage is. The signal power dissipated in the resistor is ( ) ( ) 13
Homework Assignment 10
Homework Assignment 10 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More informationMidterm 2 Exam. Max: 90 Points
Midterm 2 Exam Name: Max: 90 Points Question 1 Consider the circuit below. The duty cycle and frequency of the 555 astable is 55% and 5 khz respectively. (a) Determine a value for so that the average current
More informationHomework Assignment 06
Homework Assignment 06 Question 1 (Short Takes) One point each unless otherwise indicated. 1. Consider the current mirror below, and neglect base currents. What is? Answer: 2. In the current mirrors below,
More informationFinal Exam. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.1 μs. Estimate the 3 db bandwidth of the amplifier.
Final Exam Name: Score /100 Question 1 Short Takes 1 point each unless noted otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.1 μs. Estimate the 3 db bandwidth
More informationHomework Assignment 12
Homework Assignment 12 Question 1 Shown the is Bode plot of the magnitude of the gain transfer function of a constant GBP amplifier. By how much will the amplifier delay a sine wave with the following
More informationHomework Assignment 11
Homework Assignment 11 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More information55:041 Electronic Circuits The University of Iowa Fall Exam 1 Solution
Exam 1 Name: Score /60 Question 1 Short takes. For True/False questions, write T, or F in the right-hand column as appropriate. For other questions, provide answers in the space provided. 1. Tue of false:
More information55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point.
Exam 3 Name: Score /65 Question 1 Unless stated otherwise, each question below is 1 point. 1. An engineer designs a class-ab amplifier to deliver 2 W (sinusoidal) signal power to an resistive load. Ignoring
More information(b) 25% (b) increases
Homework Assignment 07 Question 1 (2 points each unless noted otherwise) 1. In the circuit 10 V, 10, and 5K. What current flows through? Answer: By op-amp action the voltage across is and the current through
More informationHomework Assignment 06
Question 1 (2 points each unless noted otherwise) Homework Assignment 06 1. True or false: when transforming a circuit s diagram to a diagram of its small-signal model, we replace dc constant current sources
More informationPhy 335, Unit 4 Transistors and transistor circuits (part one)
Mini-lecture topics (multiple lectures): Phy 335, Unit 4 Transistors and transistor circuits (part one) p-n junctions re-visited How does a bipolar transistor works; analogy with a valve Basic circuit
More informationFall and. Answer: Below. The. assumptions. base
Homework Assignment 08 Question 1 (2 points each unless noted otherwise) 1. Sketch a two-transistor configuration using npn and pnpp BJTs that iss equivalent to a single pnpp BJT, and label the effective
More informationHomework Assignment 04
Question 1 (Short Takes) Homework Assignment 04 1. Consider the single-supply op-amp amplifier shown. What is the purpose of R 3? (1 point) Answer: This compensates for the op-amp s input bias current.
More informationMini Project 3 Multi-Transistor Amplifiers. ELEC 301 University of British Columbia
Mini Project 3 Multi-Transistor Amplifiers ELEC 30 University of British Columbia 4463854 November 0, 207 Contents 0 Introduction Part : Cascode Amplifier. A - DC Operating Point.......................................
More informationHomework Assignment 07
Homework Assignment 07 Question 1 (Short Takes). 2 points each unless otherwise noted. 1. A single-pole op-amp has an open-loop low-frequency gain of A = 10 5 and an open loop, 3-dB frequency of 4 Hz.
More informationLecture (04) BJT Amplifiers 1
Lecture (04) BJT Amplifiers 1 By: Dr. Ahmed ElShafee ١ The Linear Amplifier A linear amplifier provides amplification of a signal without any distortion so that the output signal A voltage divider biased
More information5.25Chapter V Problem Set
5.25Chapter V Problem Set P5.1 Analyze the circuits in Fig. P5.1 and determine the base, collector, and emitter currents of the BJTs as well as the voltages at the base, collector, and emitter terminals.
More informationESE319 Introduction to Microelectronics High Frequency BJT Model & Cascode BJT Amplifier
High Frequency BJT Model & Cascode BJT Amplifier 1 Gain of 10 Amplifier Non-ideal Transistor C in R 1 V CC R 2 v s Gain starts dropping at > 1MHz. Why! Because of internal transistor capacitances that
More informationIn-Class Exercises for Lab 2: Input and Output Impedance
In-Class Exercises for Lab 2: Input and Output Impedance. What is the output resistance of the output device below? Suppose that you want to select an input device with which to measure the voltage produced
More informationHomework Assignment 05
Homework Assignment 05 Question (2 points each unless otherwise indicated)(20 points). Estimate the parallel parasitic capacitance of a mh inductor with an SRF of 220 khz. Answer: (2π)(220 0 3 ) = ( 0
More informationChapter 11 Output Stages
1 Chapter 11 Output Stages Learning Objectives 2 1) The classification of amplifier output stages 2) Analysis and design of a variety of output-stage types 3) Overview of power amplifiers Introduction
More informationBy: Dr. Ahmed ElShafee
Lecture (04) Transistor Bias Circuit 3 BJT Amplifiers 1 By: Dr. Ahmed ElShafee ١ Emitter Feedback Bias If an emitter resistor is added to the base bias circuit in Figure, the result is emitter feedback
More informationE84 Lab 3: Transistor
E84 Lab 3: Transistor Cherie Ho and Siyi Hu April 18, 2016 Transistor Testing 1. Take screenshots of both the input and output characteristic plots observed on the semiconductor curve tracer with the following
More informationHomework Assignment 07
Homework Assignment 07 Question 1 (Short Takes). 2 points each unless otherwise noted. 1. A single-pole op-amp has an open-loop low-frequency gain of A = 10 5 and an open loop, 3-dB frequency of 4 Hz.
More informationGATE SOLVED PAPER - IN
YEAR 202 ONE MARK Q. The i-v characteristics of the diode in the circuit given below are : v -. A v 0.7 V i 500 07 $ = * 0 A, v < 0.7 V The current in the circuit is (A) 0 ma (C) 6.67 ma (B) 9.3 ma (D)
More informationECE 3455: Electronics Section Spring Final Exam
: Electronics Section 12071 Spring 2011 Version B May 7, 2011 Do not open the exam until instructed to do so. Answer the questions in the spaces provided on the question sheets. If you run out of room
More informationPhysics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 12, 2017
Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 12, 2017 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain
More informationUNIVERSITY OF PENNSYLVANIA EE 206
UNIVERSITY OF PENNSYLVANIA EE 206 TRANSISTOR BIASING CIRCUITS Introduction: One of the most critical considerations in the design of transistor amplifier stages is the ability of the circuit to maintain
More informationLF442 Dual Low Power JFET Input Operational Amplifier
LF442 Dual Low Power JFET Input Operational Amplifier General Description The LF442 dual low power operational amplifiers provide many of the same AC characteristics as the industry standard LM1458 while
More informationElectronic Circuits. Laboratory 1 - Solution
Institut für Integrierte Systeme Integrated Systems Laboratory Autumn Semester 2016 Electronic Circuits Prof. Dr. Qiuting Huang Laboratory 1 - Solution 13.10.2016 and 14.10.2016 Last Update: 07. 10. 2016
More informationECE 255, MOSFET Amplifiers
ECE 255, MOSFET Amplifiers 26 October 2017 In this lecture, the basic configurations of MOSFET amplifiers will be studied similar to that of BJT. Previously, it has been shown that with the transistor
More informationEXP8: AMPLIFIERS II.
EXP8: AMPLIFIES II. Objectives. The objectives of this lab are:. To analyze the behavior of a class A amplifier. 2. To understand the role the components play in the gain of the circuit. 3. To find the
More informationLecture #7 BJT and JFET Frequency Response
November 2014 Integrated Technical Education Cluster At AlAmeeria J-601-1448 Electronic Principals Lecture #7 BJT and JFET Frequency Response Instructor: Dr. Ahmad El-Banna Agenda Introduction General
More informationTL082 Wide Bandwidth Dual JFET Input Operational Amplifier
TL082 Wide Bandwidth Dual JFET Input Operational Amplifier General Description These devices are low cost high speed dual JFET input operational amplifiers with an internally trimmed input offset voltage
More informationLM13600 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers
LM13600 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers General Description The LM13600 series consists of two current controlled transconductance amplifiers each with
More informationEE 482 Electronics II
EE 482 Electronics II Lab #4: BJT Differential Pair with Resistive Load Overview The objectives of this lab are (1) to design and analyze the performance of a differential amplifier, and (2) to measure
More informationExperiment 8 Frequency Response
Experiment 8 Frequency Response W.T. Yeung, R.A. Cortina, and R.T. Howe UC Berkeley EE 105 Spring 2005 1.0 Objective This lab will introduce the student to frequency response of circuits. The student will
More informationTL082 Wide Bandwidth Dual JFET Input Operational Amplifier
TL082 Wide Bandwidth Dual JFET Input Operational Amplifier General Description These devices are low cost, high speed, dual JFET input operational amplifiers with an internally trimmed input offset voltage
More information10. Output Stages and Power Supplies. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1
10. Output Stages and Power Supplies 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1 10.1 Thermal Considerations Considerable power is dissipated as heat in power devices.
More informationGechstudentszone.wordpress.com
UNIT 4: Small Signal Analysis of Amplifiers 4.1 Basic FET Amplifiers In the last chapter, we described the operation of the FET, in particular the MOSFET, and analyzed and designed the dc response of circuits
More informationTL082 Wide Bandwidth Dual JFET Input Operational Amplifier
TL082 Wide Bandwidth Dual JFET Input Operational Amplifier General Description These devices are low cost, high speed, dual JFET input operational amplifiers with an internally trimmed input offset voltage
More informationEE 330 Laboratory 8 Discrete Semiconductor Amplifiers
EE 330 Laboratory 8 Discrete Semiconductor Amplifiers Fall 2018 Contents Objective:...2 Discussion:...2 Components Needed:...2 Part 1 Voltage Controlled Amplifier...2 Part 2 A Nonlinear Application...3
More informationUniversity of Michigan EECS 311: Electronic Circuits Fall 2008 LAB 4 SINGLE STAGE AMPLIFIER
University of Michigan EECS 311: Electronic Circuits Fall 2008 LAB 4 SINGLE STAGE AMPLIFIER Issued 10/27/2008 Report due in Lecture 11/10/2008 Introduction In this lab you will characterize a 2N3904 NPN
More informationProf. Anyes Taffard. Physics 120/220. Diode Transistor
Prof. Anyes Taffard Physics 120/220 Diode Transistor Diode One can think of a diode as a device which allows current to flow in only one direction. Anode I F Cathode stripe Diode conducts current in this
More informationTesting Power Sources for Stability
Keywords Venable, frequency response analyzer, oscillator, power source, stability testing, feedback loop, error amplifier compensation, impedance, output voltage, transfer function, gain crossover, bode
More information1. An engineer measures the (step response) rise time of an amplifier as. Estimate the 3-dB bandwidth of the amplifier. (2 points)
Exam 1 Name: Score /60 Question 1 Short Takes 1 point each unless noted otherwise. 1. An engineer measures the (step response) rise time of an amplifier as. Estimate the 3-dB bandwidth of the amplifier.
More informationLF411 Low Offset, Low Drift JFET Input Operational Amplifier
Low Offset, Low Drift JFET Input Operational Amplifier General Description These devices are low cost, high speed, JFET input operational amplifiers with very low input offset voltage and guaranteed input
More informationECE:3410 Electronic Circuits
ECE:3410 Electronic Circuits IR Link Labs Textbook Blackboard A. Kruger IR Link Labs, Version 2.3 1 Specifications Design a simple IR remote control Press a button on a transmitter Turn on a 5 V, 50 ma,
More informationUNIT I BIASING OF DISCRETE BJT AND MOSFET PART A
UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A 1. Why do we choose Q point at the center of the load line? 2. Name the two techniques used in the stability of the q point.explain. 3. Give the expression
More informationA 40 MHz Programmable Video Op Amp
A 40 MHz Programmable Video Op Amp Conventional high speed operational amplifiers with bandwidths in excess of 40 MHz introduce problems that are not usually encountered in slower amplifiers such as LF356
More informationExperiment No. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS
Experiment No. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS 1. Objective: The objective of this experiment is to explore the basic applications of the bipolar junction transistor
More information55:041 Electronic Circuits
55:041 Electronic Circuits Output Stages and Power Amplifiers Sections of Chapter 8 A. Kruger Power + Output Stages1 Power Amplifiers, Power FETS & BJTs Audio (stereo) MP3 Players Motor controllers Servo
More informationExam Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance voltage?
Exam 2 Name: Score /90 Question 1 Short Takes 1 point each unless noted otherwise. 1. Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance
More informationECE 255, MOSFET Basic Configurations
ECE 255, MOSFET Basic Configurations 8 March 2018 In this lecture, we will go back to Section 7.3, and the basic configurations of MOSFET amplifiers will be studied similar to that of BJT. Previously,
More informationPower Amplifiers. Class B Class AB
ower Amplifiers Class B Class AB Class B he circuit each transistor conducts for a half of every signal period complementary pair push-pull arrangement peration vi ( 0.6; 0.6) (off), (off) v 0 vi v 0.6
More informationLF353 Wide Bandwidth Dual JFET Input Operational Amplifier
LF353 Wide Bandwidth Dual JFET Input Operational Amplifier General Description These devices are low cost, high speed, dual JFET input operational amplifiers with an internally trimmed input offset voltage
More informationTransistor Biasing. DC Biasing of BJT. Transistor Biasing. Transistor Biasing 11/23/2018
Transistor Biasing DC Biasing of BJT Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com A transistors steady state of operation depends a great deal
More informationLF412 Low Offset, Low Drift Dual JFET Input Operational Amplifier
LF412 Low Offset, Low Drift Dual JFET Input Operational Amplifier General Description These devices are low cost, high speed, JFET input operational amplifiers with very low input offset voltage and guaranteed
More informationLM148/LM248/LM348 Quad 741 Op Amps
Quad 741 Op Amps General Description The LM148 series is a true quad 741. It consists of four independent, high gain, internally compensated, low power operational amplifiers which have been designed to
More informationSAMPLE FINAL EXAMINATION FALL TERM
ENGINEERING SCIENCES 154 ELECTRONIC DEVICES AND CIRCUITS SAMPLE FINAL EXAMINATION FALL TERM 2001-2002 NAME Some Possible Solutions a. Please answer all of the questions in the spaces provided. If you need
More informationLM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers
LM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers General Description The LM13700 series consists of two current controlled transconductance amplifiers, each with
More informationBJT Circuits (MCQs of Moderate Complexity)
BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r
More informationField Effect Transistors
Field Effect Transistors Purpose In this experiment we introduce field effect transistors (FETs). We will measure the output characteristics of a FET, and then construct a common-source amplifier stage,
More informationBoosting output in high-voltage op-amps with a current buffer
Boosting output in high-voltage op-amps with a current buffer Author: Joe Kyriakakis, Apex Microtechnology Date: 02/18/2014 Categories: Current, Design Tools, High Voltage, MOSFETs & Power MOSFETs, Op
More informationECE 310L : LAB 9. Fall 2012 (Hay)
ECE 310L : LAB 9 PRELAB ASSIGNMENT: Read the lab assignment in its entirety. 1. For the circuit shown in Figure 3, compute a value for R1 that will result in a 1N5230B zener diode current of approximately
More informationLF444 Quad Low Power JFET Input Operational Amplifier
LF444 Quad Low Power JFET Input Operational Amplifier General Description The LF444 quad low power operational amplifier provides many of the same AC characteristics as the industry standard LM148 while
More informationECE:3410 Electronic Circuits
ECE:3410 Electronic Circuits Output Stages and Power Amplifiers Sections of Chapter 8 A. Kruger Power + Output Stages1 Power Amplifiers, Power FETS & BJTs Audio (stereo) MP3 Players Motor controllers Servo
More informationLF444 Quad Low Power JFET Input Operational Amplifier
LF444 Quad Low Power JFET Input Operational Amplifier General Description The LF444 quad low power operational amplifier provides many of the same AC characteristics as the industry standard LM148 while
More informationPrelab 6: Biasing Circuitry
Prelab 6: Biasing Circuitry Name: Lab Section: R 1 R 2 V OUT Figure 1: Resistive divider voltage source 1. Consider the resistor network shown in Figure 1. Let = 10 V, R 1 = 9.35 kω, and R 2 = 650 Ω. We
More informationLab 2: Common Base Common Collector Design Exercise
CSUS EEE 109 Lab - Section 01 Lab 2: Common Base Common Collector Design Exercise Author: Bogdan Pishtoy / Lab Partner: Roman Vermenchuk Lab Report due March 26 th Lab Instructor: Dr. Kevin Geoghegan 2016-03-25
More informationECE 255, Discrete-Circuit Amplifiers
ECE 255, Discrete-Circuit Amplifiers 20 March 2018 In this lecture, we will continue with the study of transistor amplifiers with the presence of biasing circuits and coupling capacitors in place. We will
More informationThe steeper the phase shift as a function of frequency φ(ω) the more stable the frequency of oscillation
It should be noted that the frequency of oscillation ω o is determined by the phase characteristics of the feedback loop. the loop oscillates at the frequency for which the phase is zero The steeper the
More informationECE 2201 PRELAB 6 BJT COMMON EMITTER (CE) AMPLIFIER
ECE 2201 PRELAB 6 BJT COMMON EMITTER (CE) AMPLIFIER Hand Analysis P1. Determine the DC bias for the BJT Common Emitter Amplifier circuit of Figure 61 (in this lab) including the voltages V B, V C and V
More informationCurrent Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.
Current Mirrors Basic BJT Current Mirror Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. For its analysis, we assume identical transistors and neglect
More informationDesigning an Audio Amplifier Using a Class B Push-Pull Output Stage
Designing an Audio Amplifier Using a Class B Push-Pull Output Stage Angel Zhang Electrical Engineering The Cooper Union for the Advancement of Science and Art Manhattan, NY Jeffrey Shih Electrical Engineering
More informationDifferential Amplifier Design
Differential Amplifier Design Design with ideal current source bias. Differential and common mode gain results Add finite output resistance to current source. Replace ideal current source with current
More informationECE 363 FINAL (F16) 6 problems for 100 pts Problem #1: Fuel Pump Controller (18 pts)
ECE 363 FINAL (F16) NAME: 6 problems for 100 pts Problem #1: Fuel Pump Controller (18 pts) You are asked to design a high-side switch for a remotely operated fuel pump. You decide to use the IRF9520 power
More informationOperational Amplifiers
Operational Amplifiers Table of contents 1. Design 1.1. The Differential Amplifier 1.2. Level Shifter 1.3. Power Amplifier 2. Characteristics 3. The Opamp without NFB 4. Linear Amplifiers 4.1. The Non-Inverting
More information55:041 Electronic Circuits
55:041 Electronic Circuits MOSFETs Sections of Chapter 3 &4 A. Kruger MOSFETs, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width = 1 10-6 m or less Thickness = 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor
More informationTransistor Digital Circuits
Recapitulation Transistor Digital Circuits The transistor Operating principle and regions Utilization of the transistor Transfer characteristics, symbols Controlled switch model BJT digital circuits MOSFET
More informationENEE 306: Electronics Analysis and Design Laboratory
ENEE 306: Electronics Analysis and Design Laboratory Neil Goldsman Department of Electrical and Computer Engineering University of Maryland College Park, MD 20742 Spring 2005 Instructor: Professor Neil
More informationOscillators. An oscillator may be described as a source of alternating voltage. It is different than amplifier.
Oscillators An oscillator may be described as a source of alternating voltage. It is different than amplifier. An amplifier delivers an output signal whose waveform corresponds to the input signal but
More informationLF442 Dual Low Power JFET Input Operational Amplifier
LF442 Dual Low Power JFET Input Operational Amplifier General Description The LF442 dual low power operational amplifiers provide many of the same AC characteristics as the industry standard LM1458 while
More informationInput Stage Concerns. APPLICATION NOTE 656 Design Trade-Offs for Single-Supply Op Amps
Maxim/Dallas > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS Keywords: single-supply, op amps, amplifiers, design, trade-offs, operational amplifiers Apr 03, 2000 APPLICATION NOTE 656 Design Trade-Offs
More informationLF453 Wide-Bandwidth Dual JFET-Input Operational Amplifiers
LF453 Wide-Bandwidth Dual JFET-Input Operational Amplifiers General Description The LF453 is a low-cost high-speed dual JFET-input operational amplifier with an internally trimmed input offset voltage
More informationEE 330 Laboratory 8 Discrete Semiconductor Amplifiers
EE 330 Laboratory 8 Discrete Semiconductor Amplifiers Fall 2017 Contents Objective:... 2 Discussion:... 2 Components Needed:... 2 Part 1 Voltage Controlled Amplifier... 2 Part 2 Common Source Amplifier...
More informationUNIT 4 BIASING AND STABILIZATION
UNIT 4 BIASING AND STABILIZATION TRANSISTOR BIASING: To operate the transistor in the desired region, we have to apply external dec voltages of correct polarity and magnitude to the two junctions of the
More informationElectronic Troubleshooting. Chapter 5 Multistage Amplifiers
Electronic Troubleshooting Chapter 5 Multistage Amplifiers Overview When more amplification is required than can be supplied by a single stage amp A second stage is added Or more stages are added Aspects
More informationLF451 Wide-Bandwidth JFET-Input Operational Amplifier
LF451 Wide-Bandwidth JFET-Input Operational Amplifier General Description The LF451 is a low-cost high-speed JFET-input operational amplifier with an internally trimmed input offset voltage (BI- FET IITM
More informationSIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road QUESTION BANK
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK Subject with Code : Electronic Circuit Analysis (16EC407) Year & Sem: II-B.Tech & II-Sem
More informationECE 145A/218A, Lab Project #1b: Transistor Measurement.
ECE 145A/218A, Lab Project #1b: Transistor Measurement. September 28, 2017 OVERVIEW... 2 GOALS:... 2 SAFETY PRECAUTIONS:... 2 READING:... 2 TRANSISTOR RF CHARACTERIZATION.... 3 DC BIAS CIRCUITS... 3 TEST
More informationHigh Voltage Power Operational Amplifiers EQUIVALENT SCHEMATIC R1 R2 C1 R3 Q6 4 CC1 5 CC2 Q8 Q12 3 I Q Q16. +V s
PA9 PA9 High Voltage Power Operational Amplifiers FEATURES HIGH VOLTAGE 4V (±5V) LOW QUIESCENT CURRENT ma HIGH OUTPUT CURRENT 0mA PROGRAMMABLE CURRENT LIMIT HIGH SLEW RATE 300V/µs APPLICATIONS PIEZOELECTRIC
More informationReading. Lecture 17: MOS transistors digital. Context. Digital techniques:
Reading Lecture 17: MOS transistors digital Today we are going to look at the analog characteristics of simple digital devices, 5. 5.4 And following the midterm, we will cover PN diodes again in forward
More informationHomework Assignment 02
Question 1 (2 points each unless noted otherwise) 1. Is the following circuit an STC circuit? Homework Assignment 02 (a) Yes (b) No (c) Need additional information Answer: There is one reactive element
More informationCode No: Y0221/R07 Set No. 1 I B.Tech Supplementary Examinations, Apr/May 2013 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronics Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions
More informationEXPERIMENT 1: LOW AND HIGH FREQUENCY REGION ANALYSIS OF BJT AMPLIFIERS
EXPERIMENT 1: LOW AND HIGH FREQUENCY REGION ANALYSIS OF BJT AMPLIFIERS Objective: In single layer common emitter amplifiers, observation of frequency dependence. Materials Transistor: 1x BC237 transistor
More informationLM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers
LM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers General Description The LM13700 series consists of two current controlled transconductance amplifiers, each with
More informationAmplifier Frequency Response, Feedback, Oscillations; Op-Amp Block Diagram and Gain-Bandwidth Product
Amplifier Frequency Response, Feedback, Oscillations; Op-Amp Block Diagram and Gain-Bandwidth Product Physics116A,12/4/06 Draft Rev. 1, 12/12/06 D. Pellett 2 Negative Feedback and Voltage Amplifier AB
More informationCMOS Operational-Amplifier
CMOS Operational-Amplifier 1 What will we learn in this course How to design a good OP Amp. Basic building blocks Biasing and Loading Swings and Bandwidth CH2(8) Operational Amplifier as A Black Box Copyright
More informationLF353 Wide Bandwidth Dual JFET Input Operational Amplifier
LF353 Wide Bandwidth Dual JFET Input Operational Amplifier General Description These devices are low cost high speed dual JFET input operational amplifiers with an internally trimmed input offset voltage
More information