GaAs MMIC Power Amplifier
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1 GaAs MMIC Power Amplifier AM83WM-BM-R AM83WM-FM-R March 211 Rev 1 DESCRIPTION AMCOM s AM83WM-BM/FM-R is an ultra broadband GaAs MMIC power amplifier. It has 23dB gain, and >28dBm output power over the. to 1GHz band. This MMIC is in a ceramic package with both RF and DC leads at the bottom level of the package to facilitate low-cost SMT assembly to the PC board. AM83WM-FM-R is AM83WM-BM-R assembled on a gold plated copper flange carrier for screwing on to a metal heat sink. Both parts are RoHS compliant. FEATURES Ultra wide bandwidth from MHz to 1GHz High output power, P1dB = 3.dBm High gain, 18dB Input /Output matched to Ohms APPLICATIONS Software Radio Instrumentation Gain block TYPICAL PERFORMANCE * (Bias Conditions**: V dd = +12V, I dq = 4mA) Parameters Minimum Typical ** Maximum Frequency.1 8GHz. 1GHz Small Signal Gain 14dB 18dB 22dB Gain Ripple ± 3dB ± 4.dB 2GHz 29dBm 3dBm P1dB from.1 to 8GHz > 27dBm 2GHz 3dBm 31dBm Psat from.1 to 8.GHz > 28dBm 1GHz 48dBm Input Return Loss 9dB 1dB Output Return Loss 7dB 1dB Thermal Resistance 4. C/W * Specifications subject to change without notice. ** Gate biases corresponding to above currents are V gs1 =-.7V, I gs1 <.ma, V gs2 =-.7V, I gs2 < 1mA and may vary from lot to lot. Gate currents could reach above limits only near power saturation Website: 41 Professional Drive, Gaithersburg, MD 2879
2 AM83WM-BM/FM-R March 211, REV 1 ABSOLUTE MAXIMUM RATING Parameters Symbol Rating Drain source voltage V dd 13V Gate source voltage V gs1 & V gs2-3v Drain source current I dq1.2a Drain source current I dq2.4a Continuous dissipation at 2ºC P t 7.8W Channel temperature T ch 17 C Operating temperature T op - C to +8 C Storage temperature T sto - C to +13 C SMALL SIGNAL DATA* 2 2 Gain 2 2 Gain Gain & Return Losses (db) Input RL Output RL Gain & Return Losses (db) Output RL Input RL * S-Parameters measured using bias tee at the output. MMIC could be operated at lower than V dd =+12V with almost same small signal parameters. Website: 41 Professional Drive, Gaithersburg, MD 2879
3 AM83WM-BM/FM-R March 211, REV 1 POWER DATA* 3 P1dB (I dq =.4A) P1dB (dbm) & η (%) P1dB Current (A) EFF IDS P3dB (I dq =.4A) P3dB (dbm) & η (%) P3dB Current (A) EFF IDS * Power measured using bias tee at the output. MMIC could be operated at lower than V dd =+12V with reduced power output. Website: 41 Professional Drive, Gaithersburg, MD 2879
4 AM83WM-BM/FM-R March 211, REV 1 PACKAGE OUTLINE (BM) Gate biases are for reference only and may vary from lot to lot Pin Layout Pin No. Function Bias 1 Vdd1 +12V 2 NC 3 RF in 4 NC Vgs1 -.7V 6 Vgs2 -.7V 7 NC 8 RF out & Vdd2 +12V 9 NC 1 Vgs2 Website: 41 Professional Drive, Gaithersburg, MD 2879
5 AM83WM-BM/FM-R March 211, REV 1 PACKAGE OUTLINE (FM) Pin Layout Pin No. Function Bias 1 Vdd1 +12V 2 NC 3 RF in 4 NC Vgs1 -.7V 6 Vgs2 -.7V 7 NC 8 RF out & Vdd2 +12V 9 NC 1 Vgs2 Website: 41 Professional Drive, Gaithersburg, MD 2879
6 AM83WM-BM/FM-R March 211, REV 1 TEST CIRCUIT for BM Package Important Notes: 1- The +12V Bias to the output port could be provided via a bias tee or suitable chokes to be soldered on the board. Inductance of choke should be large enough to have high impedance at lowest frequency of operation (3nH is adequate). 2- Recommended current biases are 13mA and 27mA for the first stage and second stage respectively. Gate biases of -.7V are for reference only. V gs1 & V gs2 could be adjusted to vary the currents going thru the first stage (V dd1 pin) and the second stage (V dd2 pin) respectively. 3- Do not apply V dd1 & V dd2 without proper negative voltages on V gs1 & V gs2. 4- The currents flowing out of the V gs1 & V gs2 pins are less than.ma & 1mA respectively at P 1dB. - External 1 µf dipped tantalum capacitor should be attached to Vd and Vg to decouple external bias leads. Website: 41 Professional Drive, Gaithersburg, MD 2879
GaAs MMIC Power Amplifier
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More informationFeatures. = +25 C, Vdd = +4V, Idd = 90 ma [2]
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More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC7LP5E POWER AMPLIFIER,.2
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More informationFeatures. = +25 C, Vs = +5V. Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range MHz Gain
Typical Applications Functional Diagram The HMC32LP3 / HMC32LP3E is ideal for basestation receivers: GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio HMC32LP3 / 32LP3E AMPLIFIER, 00-1000 MHz Features
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7 Typical Applications The is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radios Functional Diagram v. Electrical Specifications T A = + C, Rbias
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v.112 HMC14LP3CE AMPLIFIER, 24-43. GHz Typical Applications This HMC14LP3BE is ideal for: Point-to-Point Radios Test Instrumentation SatCom Transponders & VSAT Industrial Sensors EW & ECM Subsystems Functional
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3 Watt C-Band Packaged Power Amplifier Key Features Frequency Range: 5.9 8.5 GHz Power: 35 dbm Psat, 34 dbm P1dB Gain: 18 db TOI: 42 dbm PAE: 37% NF: 7.5 db Bias: Vd = 6 V, Id = 1.0 A, Vg = -0.6 V Typical
More informationGaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
The is a broadband, power efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. The is designed to provide optimal LO drive for T3 mixers. Typically, ADM-26-2931SM provides. db
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17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
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MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The
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AMMC-525 3KHz 8 GHz TWA Data Sheet Description The AMMC-525 MMIC is a 3KHz to 8GHz ultra broadband traveling wave amplifier. In this operational frequency band, AMMC-525 provides 8dB gain with better than
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v.61 Typical Applications The wideband PA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Features P1dB Output Power: +27.5
More informationFeatures OBSOLETE. Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Supply Current (Idd) ma
7 Typical Applications The HMC667LP2(E) is ideal for: WiMAX, WiBro & Fixed Wireless SDARS & WLAN Receivers Infrastructure & Repeaters Access Points Telematics & DMB Functional Diagram v2.11 Electrical
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CATV Linear Amplifier Key Features Frequency Range: 40MHz - 1GHz Gain: 20 db 1.7 db 75 Ω Noise Figure Ultra-Low Distortion: -67dBc ACPR typical Low DC Power Consumption Single Supply Bias:+8V, 380mA 28L
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