S-808 Series. Rev. 2.0 SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

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1 Rev. 2. SUPER-SMALL PACKAGE HIGH-PRECISION OLTAGE DETECTOR The is a high-precision voltage detector developed using CMOS process. The detection voltage is fixed internally, with an accuracy of ±2.%. Two output types, Nch open-drain and CMOS output, are available. Features øultra-low current consumption.3 µa typ. ( =.5 ) Products with detection voltage of.4 or less electronic.8µa typ. ( =3.5 ) Products with detection voltage of.5 or more øhigh-precision detection voltage ±2.% ølow operating voltage.7 to 5. Products with detection voltage of.4 or less.95 to. øhysteresis characteristics ødetection voltage Products with a detection voltage of.5 or more 5% typ..8 to 6. (. step) ønch open-drain active low and CMOS active low output øsc-82ab øto-92 øsot-89-3 øsot-23-5 Super-small plastic package Plastic package Miniaturized power mold plastic package ery-small plastic package Applications øbattery checker øpower failure detector øpower monitor for pagers, calculators, organizers, øconstant voltage power monitor for cameras, video equipment, communication devices øpower monitor for microcomputers and reset CPUs Pin Assignment () SC-82AB (2) TO-92 (3) SOT-89-3 (4) SOT-23-5 Top view NC 4 SS 2 3 SS Top view 2 3 SS Top view SS 4 NC 5 NC Bottom view Figure Seiko Instruments Inc.

2 Block Diagram () Nch open-drain active low output (2) CMOS active low output DD DD * + + * * REF REF SS SS Figure 2 *Parasitic diode Selection Guide S-88XX AX XX - XXX - T2 Directions of the IC for taping specifications Product name (abbreviation) Package name (abbreviation) NP: SC-82AB MP: SOT-23-5 UP: SOT-89-3 Y: TO-92 Output type N: Nch open-drain (active low output) L: CMOS (active low output) Detection voltage rank 2 Seiko Instruments Inc.

3 Table Detection voltage range Hysteresis width Nch Open Drain(Low) () HYS typ.() SC-82AB TO-92 SOT-89-3 SOT ±2.%.34 S-888ANNP-E7Y-T2.9±2.%.44 S-889ANNP-E7Z-T2.±2.%.54 S-88ANNP-E7-T2.±2.%.64 S-88ANNP-E7-T2.2±2.%.73 S-882ANNP-E72-T2.3±2.%.83 S-883ANNP-EDA-T2.4±2.%.93 S-884ANNP-EDB-T2.5±2.%.75 S-885ANNP-EDC-T2 S-885ANY S-885ANUP-EDC-T2.6±2.%.8 S-886ANNP-EDD-T2 S-886ANY S-886ANUP-EDD-T2.7±2.%.85 S-887ANNP-EDE-T2 S-887ANY S-887ANUP-EDE-T2 S-887ANMP-EDE-T2.8±2.%.9 S-888ANNP-EDF-T2 S-888ANY S-888ANUP-EDF-T2 S-888ANMP-EDF-T2.9±2.%.95 S-889ANNP-EDG-T2 S-889ANY S-889ANUP-EDG-T2 S-889ANMP-EDG-T2 2.±2.%. S-882ANNP-EDH-T2 S-882ANY S-882ANUP-EDH-T2 S-882ANMP-EDH-T2 2.±2.%.5 S-882ANNP-EDJ-T2 S-882ANY S-882ANUP-EDJ-T2 S-882ANMP-EDJ-T2 2.2±2.%. S-8822ANNP-EDK-T2 S-8822ANY S-8822ANUP-EDK-T2 S-8822ANMP-EDK-T2 2.3±2.%.5 S-8823ANNP-EDL-T2 S-8823ANY S-8823ANUP-EDL-T2 S-8823ANMP-EDL-T2 2.4±2.%.2 S-8824ANNP-EDM-T2 S-8824ANY S-8824ANUP-EDM-T2 S-8824ANMP-EDM-T2 2.5±2.%.25 S-8825ANNP-EDN-T2 S-8825ANY S-8825ANUP-EDN-T2 S-8825ANMP-EDN-T2 2.6±2.%.3 S-8826ANNP-EDP-T2 S-8826ANY S-8826ANUP-EDP-T2 2.7±2.%.35 S-8827ANNP-EDQ-T2 S-8827ANY S-8827ANUP-EDQ-T2 S-8827ANMP-EDQ-T2 2.8±2.%.4 S-8828ANNP-EDR-T2 S-8828ANY S-8828ANUP-EDR-T2 S-8828ANMP-EDR-T2 2.9±2.%.45 S-8829ANNP-EDS-T2 S-8829ANY S-8829ANUP-EDS-T2 3.±2.%.5 S-883ANNP-EDT-T2 S-883ANY S-883ANUP-EDT-T2 S-883ANMP-EDT-T2 3.±2.%.55 S-883ANNP-ED-T2 S-883ANY S-883ANUP-ED-T2 3.2±2.%.6 S-8832ANNP-EDW-T2 S-8832ANY S-8832ANUP-EDW-T2 S-8832ANMP-EDW-T2 3.3±2.%.65 S-8833ANNP-EDX-T2 S-8833ANY S-8833ANUP-EDX-T2 S-8833ANMP-EDX-T2 3.4±2.%.7 S-8834ANNP-EDY-T2 S-8834ANY S-8834ANUP-EDY-T2 S-8834ANMP-EDY-T2 3.5±2.%.75 S-8835ANNP-EDZ-T2 S-8835ANY S-8835ANUP-EDZ-T2 S-8835ANMP-EDZ-T2 3.6±2.%.8 S-8836ANNP-ED-T2 S-8836ANY S-8836ANUP-ED-T2 S-8836ANMP-ED-T2 3.7±2.%.85 S-8837ANNP-ED-T2 S-8837ANY S-8837ANUP-ED-T2 3.8±2.%.9 S-8838ANNP-ED2-T2 S-8838ANY S-8838ANUP-ED2-T2 3.9±2.%.95 S-8839ANNP-ED3-T2 S-8839ANY S-8839ANUP-ED3-T2 S-8839ANMP-ED3-T2 4.±2.%.2 S-884ANNP-ED4-T2 S-884ANY S-884ANUP-ED4-T2 S-884ANMP-ED4-T2 4.±2.%.25 S-884ANNP-ED5-T2 S-884ANY S-884ANUP-ED5-T2 4.2±2.%.2 S-8842ANNP-ED6-T2 S-8842ANY S-8842ANUP-ED6-T2 S-8842ANMP-ED6-T2 4.3±2.%.25 S-8843ANNP-ED7-T2 S-8843ANY S-8843ANUP-ED7-T2 4.4±2.%.22 S-8844ANNP-ED8-T2 S-8844ANY S-8844ANUP-ED8-T2 S-8844ANMP-ED8-T2 4.5±2.%.225 S-8845ANNP-ED9-T2 S-8845ANY S-8845ANUP-ED9-T2 S-8845ANMP-ED9-T2 4.6±2.%.23 S-8846ANNP-EJA-T2 S-8846ANY S-8846ANUP-EJA-T2 4.7±2.%.235 S-8847ANNP-EJB-T2 S-8847ANY S-8847ANUP-EJB-T2 4.8±2.%.24 S-8848ANNP-EJC-T2 S-8848ANY S-8848ANUP-EJC-T2 4.9±2.%.245 S-8849ANNP-EJD-T2 S-8849ANY S-8849ANUP-EJD-T2 5.±2.%.25 S-885ANNP-EJE-T2 S-885ANY S-885ANUP-EJE-T2 S-885ANMP-EJE-T2 5.±2.%.255 S-885ANNP-EJF-T2 S-885ANY S-885ANUP-EJF-T2 S-885ANMP-EJF-T2 5.2±2.%.26 S-8852ANNP-EJG-T2 S-8852ANUP-EJG-T2 5.3±2.%.265 S-8853ANNP-EJH-T2 S-8853ANY 5.4±2.%.27 S-8854ANNP-EJJ-T2 5.5±2.%.275 S-8855ANNP-EJK-T2 5.6±2.%.28 S-8856ANNP-EJL-T2 5.7±2.%.285 S-8857ANNP-EJM-T2 5.8±2.%.29 S-8858ANNP-EJN-T2 5.9±2.%.295 S-8859ANNP-EJP-T2 6.±2.%.3 S-886ANNP-EJQ-T2 S-886ANUP-EJQ-T2 Seiko Instruments Inc. 3

4 Detection voltage range Hysteresis width CMOS Output Drain(Low) () HYS typ.() SC-82AB TO-92 SOT-89-3 SOT ±2.%.34 S-888ALNP-E5Y-T2.9±2.%.44 S-889ALNP-E5Z-T2.±2.%.54 S-88ALNP-E5-T2.±2.%.64 S-88ALNP-E5-T2.2±2.%.73 S-882ALNP-E52-T2.3±2.%.83 S-883ALNP-EAA-T2.4±2.%.93 S-884ALNP-EAB-T2.5±2.%.75 S-885ALNP-EAC-T2 S-885ALY S-885ALUP-EAC-T2 S-885ALMP-EAC-T2.6±2.%.8 S-886ALNP-EAD-T2 S-886ALY S-886ALUP-EAD-T2.7±2.%.85 S-887ALNP-EAE-T2 S-887ALY S-887ALUP-EAE-T2.8±2.%.9 S-888ALNP-EAF-T2 S-888ALY S-888ALUP-EAF-T2 S-888ALMP-EAF-T2.9±2.%.95 S-889ALNP-EAG-T2 S-889ALY S-889ALUP-EAG-T2 S-889ALMP-EAG-T2 2.±2.%. S-882ALNP-EAH-T2 S-882ALY S-882ALUP-EAH-T2 S-882ALMP-EAH-T2 2.±2.%.5 S-882ALNP-EAJ-T2 S-882ALY S-882ALUP-EAJ-T2 S-882ALMP-EAJ-T2 2.2±2.%. S-8822ALNP-EAK-T2 S-8822ALY S-8822ALUP-EAK-T2 2.3±2.%.5 S-8823ALNP-EAL-T2 S-8823ALY S-8823ALUP-EAL-T2 S-8823ALMP-EAL-T2 2.4±2.%.2 S-8824ALNP-EAM-T2 S-8824ALY S-8824ALUP-EAM-T2 2.5±2.%.25 S-8825ALNP-EAN-T2 S-8825ALY S-8825ALUP-EAN-T2 S-8825ALMP-EAN-T2 2.6±2.%.3 S-8826ALNP-EAP-T2 S-8826ALY S-8826ALUP-EAP-T2 2.7±2.%.35 S-8827ALNP-EAQ-T2 S-8827ALY S-8827ALUP-EAQ-T2 S-8827ALMP-EAQ-T2 2.8±2.%.4 S-8828ALNP-EAR-T2 S-8828ALY S-8828ALUP-EAR-T2 S-8828ALMP-EAR-T2 2.9±2.%.45 S-8829ALNP-EAS-T2 S-8829ALY S-8829ALUP-EAS-T2 3.±2.%.5 S-883ALNP-EAT-T2 S-883ALY S-883ALUP-EAT-T2 S-883ALMP-EAT-T2 3.±2.%.55 S-883ALNP-EA-T2 S-883ALY S-883ALUP-EA-T2 3.2±2.%.6 S-8832ALNP-EAW-T2 S-8832ALY S-8832ALUP-EAW-T2 S-8832ALMP-EAW-T2 3.3±2.%.65 S-8833ALNP-EAX-T2 S-8833ALY S-8833ALUP-EAX-T2 S-8833ALMP-EAX-T2 3.4±2.%.7 S-8834ALNP-EAY-T2 S-8834ALY S-8834ALUP-EAY-T2 3.5±2.%.75 S-8835ALNP-EAZ-T2 S-8835ALY S-8835ALUP-EAZ-T2 S-8835ALMP-EAZ-T2 3.6±2.%.8 S-8836ALNP-EA-T2 S-8836ALY S-8836ALUP-EA-T2 3.7±2.%.85 S-8837ALNP-EA-T2 S-8837ALY S-8837ALUP-EA-T2 3.8±2.%.9 S-8838ALNP-EA2-T2 S-8838ALY S-8838ALUP-EA2-T2 3.9±2.%.95 S-8839ALNP-EA3-T2 S-8839ALY S-8839ALUP-EA3-T2 4.±2.%.2 S-884ALNP-EA4-T2 S-884ALY S-884ALUP-EA4-T2 S-884ALMP-EA4-T2 4.±2.%.25 S-884ALNP-EA5-T2 S-884ALY S-884ALUP-EA5-T2 4.2±2.%.2 S-8842ALNP-EA6-T2 S-8842ALY S-8842ALUP-EA6-T2 S-8842ALMP-EA6-T2 4.3±2.%.25 S-8843ALNP-EA7-T2 S-8843ALY S-8843ALUP-EA7-T2 4.4±2.%.22 S-8844ALNP-EA8-T2 S-8844ALY S-8844ALUP-EA8-T2 4.5±2.%.225 S-8845ALNP-EA9-T2 S-8845ALY S-8845ALUP-EA9-T2 S-8845ALMP-EA9-T2 4.6±2.%.23 S-8846ALNP-EEA-T2 S-8846ALY S-8846ALUP-EEA-T2 4.7±2.%.235 S-8847ALNP-EEB-T2 S-8847ALY S-8847ALUP-EEB-T2 4.8±2.%.24 S-8848ALNP-EEC-T2 S-8848ALY S-8848ALUP-EEC-T2 4.9±2.%.245 S-8849ALNP-EED-T2 S-8849ALY S-8849ALUP-EED-T2 S-8849ALMP-EED-T2 5.±2.%.25 S-885ALNP-EEE-T2 S-885ALY S-885ALUP-EEE-T2 S-885ALMP-EEE-T2 5.±2.%.255 S-885ALNP-EEF-T2 S-885ALY S-885ALUP-EEF-T2 S-885ALMP-EEF-T2 5.2±2.%.26 S-8852ALNP-EEG-T2 S-8852ALUP-EEG-T2 S-8852ALMP-EEG-T2 5.3±2.%.265 S-8853ALNP-EEH-T2 5.4±2.%.27 S-8854ALNP-EEJ-T2 5.5±2.%.275 S-8855ALNP-EEK-T2 S-8855ALUP-EEK-T2 5.6±2.%.28 S-8856ALNP-EEL-T2 5.7±2.%.285 S-8857ALNP-EEM-T2 5.8±2.%.29 S-8858ALNP-EEN-T2 5.9±2.%.295 S-8859ALNP-EEP-T2 6.±2.%.3 S-886ALNP-EEQ-T2 Remark: Some products described here in are under development. Please contact us for Samples. 4 Seiko Instruments Inc.

5 Output Configurations. model numbering system SUPER-SMALL PACKAGE HIGH-PRECISION OLTAGE DETECTOR Nch open-drain ( L reset type) N is the last letter of the model number. e.g. S-888AN CMOS output ( L reset type) L is the last letter of the model number. e.g. S-888AL 2. Output configurations and their implementation Implementation Nch( L ) CMOS( L ) With different power supplies Yes No With active low reset CPUs Yes Yes With active high reset CPUs No No With voltage divider variable resistors Yes No ø Example with two power supplies ø Examples with one power supply /D Nch CPU /D CMOS CPU /D Nch CPU SS SS SS Figure 3 Seiko Instruments Inc. 5

6 Absolute Maximum Ratings. Products with detection voltage of.4 or less (Unless otherwise specified: ) Parameter Symbol Ratings Unit Power supply voltage - SS 7 Output Nch voltage open-drain SS -.3 to 7 CMOS SS -.3 to +.3 Output current I 5 ma Power dissipation Pd 5 mw Operating temperature Topr -2 to +7 C Storage temperature Tstg -4 to +25 C 2. Products with detection voltage of.5 or more (Unless otherwise specified: ) Parameter Symbol Ratings Unit Power supply voltage - SS 2 Output Nch voltage open-drain SS -.3 to 2 CMOS SS -.3 to +.3 Output current I 5 ma TO-92 4 Power dissipation Pd SOT mw SC-82AB,SOT Operating temperature Topr -4 to +85 C Storage temperature Tstg -4 to +25 C Remark: This IC has a built-in protection circuit for static electricity. However, prevent contact with a large static electricity or electrostatic voltage which exceeds the performance of the protection circuit 6 Seiko Instruments Inc.

7 Electrical Characteristics. Detection voltage (.8 to.4 ) SUPER-SMALL PACKAGE HIGH-PRECISION OLTAGE DETECTOR (Unless otherwise specified: ) Test Parameter Symbol Conditions Min. Typ. Max. Unit circuit S-888AX S-889AX S-88AX Detection voltage - DET S-88AX S-882AX S-883AX S-884AX S-888AX S-889AX S-88AX Release voltage + DET S-88AX S-882AX S-883AX S-884AX S-888AX S-889AX S-88AX Hysteresis width HYS S-88AX Current consumption I SS =.5 =2. S-882AX S-883AX S-884AX S-888AX S-889AX S-88AX S-88AX S-882AX S-883AX S-884AX µa 2 Operating voltage.7 5. Nch DS = Output current I =.7 ma Leakage current of output transistor I LEAK Pch(CMOS DS = output) =4.5 Nch(Nch DS =5. open drain) =5. S-888AX S-889AX Temperature - DET Ta=-2 C S-88AX characteristic of Ta to +7 C S-88AX - DET S-882AX S-883AX S-884AX ±.8 ± na 3 ±.22 m/ C ±.24 ±.27 ±.29 ±.3 Seiko Instruments Inc. 7

8 2. Detection voltage (.5 to 2.6 ) (Unless otherwise specified: ) Test Parameter Symbol Conditions Min. Typ. Max. Unit circuit S-885AX S-886AX S-887AX S-888AX S-889AX Detection voltage - DET S-882AX S-882AX S-8822AX S-8823AX S-8824AX S-8825AX S-8826AX Hysteresis width DET - DET - DET HYS Current consumption I SS = µa 2 Operating voltage.95. Nch = Output current DS =.5 Leakage current of output transistor Response time Temperature I Pch(CMOS ma I LEAK tplh output) = DS =.5 Nch(Nch open drain) DS =. =. S-885AX S-886AX S-887AX S-888AX S-889AX characteristic of - DET Ta=-4 C S-882AX - DET Ta to +85 C S-882AX S-8822AX S-8823AX S-8824AX S-8825AX S-8826AX ±.8 ±.54 ±.9 ±.57 ±.2 ±.6 ±.2 ±.63 ±.22 ± µa 3 6 µs ±.24 ±.72 m/ C ±.25 ±.75 ±.26 ±.78 ±.27 ±.8 ±.28 ±.84 ±.29 ±.87 ±.3 ±.93 8 Seiko Instruments Inc.

9 3. Detection voltage (2.7 to 3.9 ) (Unless otherwise specified: ) Test Parameter Symbol Conditions Min. Typ. Max. Unit circuit S-8827AX S-8828AX S-8829AX S-883AX S-883AX S-8832AX Detection voltage - DET S-8833AX S-8834AX S-8835AX S-8836AX S-8837AX S-8838AX S-8839AX Hysteresis width DET - DET - DET HYS Current consumption I SS = µa 2 Operating voltage.95. Nch = Output current DS =.5 = I Pch(CMOS ma Leakage current of output transistor Response time Temperature I LEAK tplh output) = DS =.5 Nch(Nch open drain) DS =. =. S-8827AX S-8828AX S-8829AX S-883AX S-883AX characteristic of - DET Ta=-4 C S-8832AX - DET Ta to +85 C S-8833AX S-8834AX S-8835AX S-8836AX S-8837AX S-8838AX S-8839AX. µa 3 ±.32 ±.96 ±.33 ±.99 ±.34 ±.2 ±.35 ±.5 ±.36 ± µs ±.38 ±.4 m/ C ±.39 ±.7 ±.4 ±.2 ±.4 ±.23 ±.42 ±.26 ±.44 ±.32 ±.45 ±.35 ±.46 ±.38 Seiko Instruments Inc. 9

10 4. Detection voltage (4. to 5.6 ) (Unless otherwise specified: ) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit S-884AX S-884AX S-8842AX S-8843AX S-8844AX S-8845AX S-8846AX S-8847AX Detection voltage - DET S-8848AX S-8849AX S-885AX S-885AX S-8852AX S-8853AX S-8854AX S-8855AX S-8856AX Hysteresis width DET - DET - DET HYS Current consumption I SS = µa 2 Operating voltage.95. Nch = DS =.5 = Output current I Pch(CMOS ma Leakage current of output transistor I LEAK output) = DS =.5 Nch(Nch open drain) DS =. =.. µa 3 Response time tplh 6 µs S-884AX ±.47 ±.4 S-884AX ±.48 ±.44 S-8842AX ±.49 ±.47 S-8843AX ±.5 ±.53 S-8844AX ±.52 ±.56 S-8845AX ±.53 ±.59 Temperature S-8846AX ±.54 ±.62 characteristic of - DET Ta=-4 C S-8847AX ±.55 ±.65 m/ C - DET Ta to +85 C S-8848AX ±.56 ±.68 S-8849AX ±.58 ±.74 S-885AX ±.59 ±.77 S-885AX ±.6 ±.8 S-8852AX ±.6 ±.83 S-8853AX ±.62 ±.86 S-8854AX ±.64 ±.92 S-8855AX ±.65 ±.95 S-8856AX ±.66 ±.98 Seiko Instruments Inc.

11 5. Detection voltage (5.7 to 6. ) (Unless otherwise specified: ) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit S-8857AX Detection voltage - DET S-8858AX S-8859AX S-886AX Hysteresis width DET - DET - DET HYS Current consumption I SS = µa 2 Operating voltage.95. Nch = DS =.5 = Output current I Pch(CMOS ma Leakage current of output transistor I LEAK output) = DS =.5 Nch(Nch open drain) DS =. =.. µa 3 Response time tplh 6 µs S-8857AX ±.67 ±2. Temperature - DET Ta=-4 C S-8858AX ±.68 ±2.4 m/ C characteristic of Ta to +85 C S-8859AX ±.69 ±2.7 - DET S-886AX ±.7 ±2.3 Test Circuits () (2) A R* kω S-88 S-88 Series Series SS SS * R is unnecessary for CMOS output products. (3) (4) S-88 Series A S-88 Series A DS SS SS DS Figure 4 Seiko Instruments Inc.

12 Technical Terms. Detection voltage (- DET ) The detection voltage - DET is the voltage at which the output switches to low. This detection voltage varies slightly among products of the same type. The variation of voltages between the specified minimum [(- DET )min.] and maximum [(- DET )max.] values is called the detection voltage range (See Figure 5). Example : For the S-888AN, detection voltage lies in the range of.784 (- DET ).86. This means that - DET is.784 in a product while - DET is.86 in another of the same S-888AN. 2. Release voltage (+ DET ) The release voltage + DET is the voltage at which the output returns (is released ) to high. This release voltage varies slightly among products of the same type. The variation of voltages between the specified minimum [(+ DET )min.] and maximum [(+ DET )max.] values is called the release voltage range (See Figure 6). Example : Remark: For the S-888AN, the release voltage lies in the range of.82 (+ DET ).867. This means that + DET is.82 in a product while + DET is.867 in another of the same S-888AN. Although the detection voltage and release voltage overlap in the range of.82 to.86, + DET will always be larger than - DET. D (- DET )Max. (- DET )Min. Detection voltage oltage range Detection Release voltage (+ DET )Max. (+ DET )Min D Release voltage range Figure 5 Figure 6 3. Hysteresis width ( HYS ) The hysteresis width is the voltage difference between the detection voltage and the release voltage (B-A= HYS in Figure ). By giving a device hysteresis, trouble such as noise at the input is avoided. 4. Through-type current Through-type current refers to the current which flows instantaneously at the time of detection and release of a voltage detector. Through-type current is large in CMOS output devices, and also flows to some extent in Nch open-drain output devices. 2 Seiko Instruments Inc.

13 5. Oscillation In applications where a resistor is connected to the voltage detector input (Figure 7), in the CMOS active low products for example, the through-type current generated when the output goes from low to high (release) causes a voltage drop equal to [through-type current] [input resistance] across the resistor. When the resultant input voltage drops below the detection voltage - DET, the output voltage returns to its low level. In this state, the through-type current and its resultant voltage drop have disappeared, and the output goes back from low to high. A through-type current is again generated, a voltage drop appears, and the process repeats. This unstable condition is referred to as oscillation. ø Misimplementation with input voltage divider RA IN S-88XXAL (CMOS output products) RB S Figure 7 Standard Circuit R* kω S * R is unnecessary for* CMOS output Figure 8 Seiko Instruments Inc. 3

14 Operation. Basic operation : CMOS active low output () When power supply voltage is greater than the release voltage + DET, the Nch transistor is OFF and the Pch transistor ON, causing (high) to appear at the output. With the Nch transistor N of Figure 9 OFF, the comparator input voltage is (RB+RC)/(RA+RB+RC). (2) When power supply voltage goes below + DET, the output maintains the power supply voltage level, as long as remains above the detection voltage - DET. When does fall below - DET (A in Figure ), the Nch transistor goes ON, the Pch transistor goes OFF, and SS appears at the output. With the Nch transistor N of Figure 9 ON, the comparator input voltage is RB/(RA+RB). (3) When falls below the minimum operating voltage, the output becomes undefined. However, output will revert to if a pull-up has been employed. (4) SS will again be output when rises above the minimum operating voltage. SS will continue to be output even when surpasses - DET, as long as it does not exceed the release voltage + DET. (5) When rises above + DET (B in Figure ), the Nch transistor goes OFF, the Pch transistor goes ON, and appears at the output. () (2) (3) (4) (5) RA + Pch * Hysteresis width ( HYS ) A B D Release voltage (+ DET ) Detection voltage (- DET ) Min. operating voltage SS R * D REF RC N Nch SS terminal output * Parasitic diode S Figure 9 Figure 4 Seiko Instruments Inc.

15 2. Other characteristics () Temperature characteristic of detection voltage The temperature characteristics of the detection voltage are expressed by the oblique line parts in Figure. S-885AXNP: - DET [] +.54m/ C - - DET25 is the detection voltage at 25 C -.54m/ C Ta[ C] Figure (2) Temperature characteristics of release voltage + DET The temperature factor Ta detection voltage as follows: of the release voltage is calculated by the temperature factor of the + DET Ta = + DET - DET - DET Ta The temperature factor of the release voltage has a same sign characteristics as the temperature factor of the detection voltage. (3) Temperature characteristics of hysteresis voltage The temperature characteristics of hysteresis voltage + DET Ta - - DET Ta is calculated as + DET Ta - - DET Ta = HY - DET - DET Ta Remark: An example of temperature characteristics of () to (3) is shown on pages 6 and 7. Seiko Instruments Inc. 5

16 Characteristics (typical characteristics) () Detection voltage ( DET ) - Temperature (Ta).9 (a) S-888AL.6 (b) S-884AL DET DET () Ta ( C) + DET DET () DET - DET Ta ( C).6 (c) S-885AL 6.25 (d) S-886AL DET + DET DET ().5 DET () 6. - DET Ta ( C) DET Ta ( C) 6 Seiko Instruments Inc.

17 (2) Hysteresis voltage width ( HYS ) - Temperature (Ta) (a) S-885AL (b) S-886AL HYS (%) 6 HYS (%) Ta ( C) Ta ( C) (3) Current consumption (I SS ) - Input voltage ( ) (a) S-888AL (b) S-884AL 6µA 2µA 5 5 I ss (µa) 4 3 I ss (µa) () () (c) S-885AL (d) S-886AL I ss (µa) µA () I ss (µa).8 5.2µA () Seiko Instruments Inc. 7

18 (4) Current consumption (I SS ) - Temperature (Ta) 6 (a) S-888AL =.5 6 (b) S-884AL = I ss (µa) 4 3 I ss (µa) Ta ( C) Ta ( C) I ss (µa) (c) S-885AL =3.5 I ss (µa) (d) S-886AL = Ta ( C) Ta ( C) 8 Seiko Instruments Inc.

19 (5) Nch transistor output current (I ) - DS (a) S-884AL/AN (b) S-886AL/AN I (ma) = DS () =.3 =. I (ma) 5 = =4.8 2 =3.6 =2.4 = DS () (6) Pch transistor output current (I ) - DS (a) S-888AL (b) S-885AL 5 3 I (ma) =2.9 =2.4 =.9 I (ma) =8.4 =7.2 =6. =4.8.5 =.4 = =3.6 = DS () DS () (7) Nch transistor output current (I ) - Input voltage( ) 3 (a) S -884AL/AN DS =.5 2 (b) S-886AL/AN DS =.5 I (ma) Ta=-3 C I (ma) 5 Ta=-4 C Ta=-25 C Ta=85 C Ta=8 C () () Seiko Instruments Inc. 9

20 (8) Pch transistor output current(i ) - Input voltage( ) (a) S-884AL (b) S-885AL DS = Ta=-4 C Ta=85 C DS =.5 I (ma) 2 I (ma) Ta=-3 C Ta=8 C () () (9) Minimum operating voltage (a) S-888AN (PULL- UP : K) 4 (b) S-888AL (PULL- UP 3. : K).8 3 Ta=-3 C (ma).6.4 Ta=-3 C (ma) 2 Ta =25 C Ta=8 C.2 Ta =25 C Ta=8 C () () (c) S-885AN (d) S-885AN 2. (PULL- UP : KΩ).75 (PULL- UP : KΩ) ().5. Notice MIN () Ta=-4 C Ta =25 C Ta=85 C.5 Ta=-4 C Ta =25 C Ta=8 C PULL_UP () () () PULL_UP Remark: MIN is defined with when goes below % of the PULL UP voltage as shown in Figure 2 when raising from. PULL_UP. MIN Figure 2 () 2 Seiko Instruments Inc.

21 () Dynamic response (a) S-888AL (b) S-888AN tphl. Response time (ms) Response time (ms) tphl. tplh. tplh..... Load capacitance (µf).... Load capacitance (µf). (c) S-884AL (d) S-884AN. tphl tphl Response time (ms). tplh Response time (ms). tplh..... Load capacitance (µf)..... Load capacitance (µf) (e) S-885AL (f) S-885AN. Response time (ms) tphl Response time (ms). tphl.. tplh tplh Load capacitance (µf) Load capacitance (µf) Seiko Instruments Inc. 2

22 (g) S-886AL (h) S-886AN Response time (ms). tphl Response time (ms). tphl. tplh. tplh Load capacitance (µf) Load capacitance (µf) µsec µsec IH Input oltage IL tphl tplh S-88 Series C R* kω Output olatage 9 % SS % * R is not needed for CMOS output products. (a) - (d) : IH=5., IL=.7 (e) - (h) : IH=, IL=.95 Figure 4 Figure 3 22 Seiko Instruments Inc.

23 Application Circuit Examples. Microcomputer reset circuits SUPER-SMALL PACKAGE HIGH-PRECISION OLTAGE DETECTOR If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may be performed or the contents of the memory register may be lost. When power supply voltage returns to normal, the microcomputer needs to be initialized before normal operations can be done. Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered. With the which has a low operating voltage, a high-precision detection voltage and hysteresis characteristic, the reset circuits shown in Figures 5 to 6 can be easily constructed. DD2 S- 88XXAL S- 88XXAN Microcomputer Microcomputer S S Figure 5 (Nch open-drain output products only) Figure 6 2. Addition of power-on reset circuit A power-on reset circuit can be constructed using Nch open-drain product of. R Di (R 75kΩ) IN S- 88XXAN C (Nch open-drain products) S Note : Note 2: R should be 75 kω or less for purpose of protection against oscillation. Di instantaneously discharges the electric charge stored by C at the falling of the power. Di is not necessary if delay in falling time is normal. () () t(s) Figure 7 t(s) Note 3: When the power steeply rises, output may goes high for a instant due to the IC inconstant region characteristics (output voltage is unstable in the region under minimum operating voltage) as shown in Figure. 8. () () t(s) t(s) Figure 8 Seiko Instruments Inc. 23

24 3. Change of detection voltage In Nch open-drain output products of the, detection voltage can be changed using resistance dividers or diodes as shown in Figures 9 and 2. In Figure 9, hysteresis width is also changed. (RA 75kΩ) RA IN S- 88XXSN f f2 IN S- 88XXSN R + - (Nch open-drain products) (Nch open-drain products) S S Detection voltage = RA+RB RB ø - DET Detection voltage = f + f2 + (- DET ) Hysteresis width = RA+RB RB ø HYS Figure 2 Note: If RA and RB are large, the hysteresis width may be larger than the value given by the formula above due to through-type current (which flows slightly in Nch open-drain circuit). Note2: RA should be 75kΩor less for purpose of protection against oscillation. Figure 9 Remarks In CMOS output products of the, through-type current flows when the device is detecting or releasing. If a high impedance is connected to the input, oscillation may be caused due to the fall of the voltage by the through-type current when lowering the voltage during releasing. When designing for mass production using an application circuit described herein, take the product deviation and temperature characteristic into consideration. Seiko Instruments Inc. shall not bear any responsibility for the patents on the circuits described herein. 24 Seiko Instruments Inc.

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30 The information herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or other diagrams described herein whose industrial properties, patents or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee any mass-production design. When the products described herein include Strategic Products (or Service) subject to regulations, they should not be exported without authorization from the appropriate governmental authorities. The products described herein cannot be used as part of any device or equipment which influences the human body, such as physical exercise equipment, medical equipment, security system, gas equipment, vehicle or airplane, without prior written permission of Seiko Instruments Inc.

PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

S-1000 Series www.ablicinc.com ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR ABLIC Inc., 2004-2015 Rev.3.1_02 The S-1000 series is a series of high-precision voltage detectors developed using CMOS