TS1102. A 1µA, 200µV OS SOT23 Precision Current-Sense Amplifier FEATURES DESCRIPTION APPLICATIONS TYPICAL APPLICATION CIRCUIT

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1 PERCENT OF UNITS - % FEATURES Improved Electrical Performance over the MAX9938 and the MAX9634 Ultra-Low Supply Current: 1μA Wide Input Common Mode Range: +2V to +2V Low Input Offset Voltage: 2μV (max) Low Gain Error:.% (max) Voltage Output Four Gain Options Available: TS112-2: Gain = 2V/V TS112-: Gain = V/V TS112-1: Gain = 1V/V TS112-2: Gain = 2V/V -Pin SOT23 Packaging APPLICATIONS Notebook Computers Current-Shunt Measurement Power Management Systems Battery Monitoring Motor Control Load Protection Smart Battery Packs/Chargers DESCRIPTION TS112 A 1µA, 2µV OS SOT23 Precision Current-Sense Amplifier TYPICAL APPLICATION CIRCUIT The voltage-output TS112 current-sense amplifiers are form-factor identical and electrical improvements to the MAX9938 and the MAX9634 current-sense amplifiers. The TS112 is the latest addition to the TS11 family of current-sense amplifiers. Consuming a very low 1μA supply current, the TS112 high-side current-sense amplifiers combine a 2-µV (max) V OS and a.% (max) gain error for cost-sensitive applications. For all high-side currentsensing applications, the TS112 features a wide input common-mode voltage range from 2V to 2V. The SOT23 package makes the TS112 an ideal choice for pcb-area-critical, low-current, highaccuracy current-sense applications in all batterypowered, remote or hand-held portable instruments. All TS112s are specified for operation over the -4 C to +1 C extended temperature range. 3 Input Offset Voltage Histogram INPUT OFFSET VOLTAGE - µv The Touchstone Semiconductor logo is a registered trademark of Touchstone Semiconductor, Incorporated. PART TS112-2 TS112- TS112-1 TS112-2 GAIN OPTION 2 V/V V/V 1 V/V 2 V/V Page Touchstone Semiconductor, Inc. All rights reserved.

2 TS112 ABSOLUTE MAXIMUM RATINGS RS+, RS- to GND V to +27V OUT to GND V to +6V RS+ to RS-... ±27V Short-Circuit Duration: OUT to GND... Continuous Continuous Input Current (Any Pin)... ±2mA Continuous Power Dissipation (T A = +7 C) -Pin SOT23 (Derate at 3.9mW/ C above +7 C).. 312mW Operating Temperature Range C to +1 C Junction Temperature C Storage Temperature Range C to +1 C Lead Temperature (Soldering, 1s) C Soldering Temperature (Reflow) C Electrical and thermal stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. Exposure to any absolute maximum rating conditions for extended periods may affect device reliability and lifetime. PACKAGE/ORDERING INFORMATION ORDER NUMBER PART MARKING CARRIER QUANTITY TS112-2EGTP Tape & Reel TADS TS112-2EGT Tape & Reel 3 TS112-EGTP Tape & Reel TADT TS112-EGT Tape & Reel 3 TS112-1EGTP Tape & Reel TADU TS112-1EGT Tape & Reel 3 TS112-2EGTP Tape & Reel TADV TS112-2EGT Tape & Reel 3 Lead-free Program: Touchstone Semiconductor supplies only lead-free packaging. Consult Touchstone Semiconductor for products specified with wider operating temperature ranges. Page 2 TS112DS r1p

3 ELECTRICAL CHARACTERISTICS TS112 V RS+ = V RS- = 3.6V; V SENSE = (V RS+ - V RS- ) = V; C OUT = 47nF; T A = -4 C to +1 C, unless otherwise noted. Typical values are at T A = +2 C. See Note 1 PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS T A = +2 C Supply Current (Note 2) I CC μa T V RS+ = 2V A = +2 C Common-Mode Input Range V CM Guaranteed by CMRR 2 2 V Common-Mode Rejection Ratio CMRR 2V < V RS+ < 2V 12 1 db Input Offset Voltage (Note 3) V OS T A = +2 C ±3 ±2 ±3 μv TS Gain G TS112- TS V/V TS Gain Error (Note 4) GE T A = +2 C ±.1 ±. % ±.6 Output Resistance (Note ) R OUT TS112-2// TS kω Gain = 2 OUT Low Voltage V OL Gain = 1 Gain = 1 2 mv Gain = 2 4 OUT High Voltage (Note 6) V OH V OH = V RS- - V OUT..2 V Output Settling Time t S TS112-2//1 2.2 ms 1% final value, V OUT = 3V TS ms Note 1: All devices are 1% production tested at T A = +2 C. All temperature limits are guaranteed by product characterization. Note 2: Extrapolated to V OUT =. I CC is the total current into the RS+ and the RS- pins. Note 3: Input offset voltage V OS is extrapolated from V OUT with V SENSE set to 1mV. Note 4: Gain error is calculated by applying two values for V SENSE and then calculating the error of the actual slope vs. the ideal transfer characteristic: For GAIN = 2, the applied V SENSE is 2mV and 12mV. For GAIN =, the applied V SENSE is 1mV and 6mV. For GAIN = 1, the applied V SENSE is mv and 3mV. For GAIN = 2, the applied V SENSE is 2.mV and 1mV. Note : The device is stable for any capacitive load at V OUT. Note 6: V OH is the voltage from V RS- to V OUT with V SENSE = 3.6V/GAIN. TS112DS r1p Page 3

4 INPUT OFFSET VOLTAGE - µv SUPPLY CURRENT - µa SUPPLY CURENT - µa INPUT OFFSET VOLTAGE - µv PERCENT OF UNITS - % PERCENT OF UNITS - % TS112 TYPICAL PERFORMANCE CHARACTERISTICS V RS+ = V RS- = 3.6V; T A = +2 C, unless otherwise noted. 3 Input Offset Voltage Histogram 3 Gain Error Histogram INPUT OFFSET VOLTAGE - µv GAIN ERROR - % Supply Current vs Temperature Input Offset Voltage vs Common-Mode Voltage V 3.6 2V V TEMPERATURE - C SUPPLY VOLTAGE - Volt Input Offset Voltage vs Temperature Supply Current vs Common-Mode Voltage Page TEMPERATURE - C SUPPLY VOLTAGE - Volt TS112DS r1p

5 SMALL-SIGNAL GAIN -db COMMON-MODE REJECTION - db GAIN ERROR - % GAIN ERROR - % TYPICAL PERFORMANCE CHARACTERISTICS V RS+ = V RS- = 3.6V; T A = +2 C, unless otherwise noted..3 Gain Error vs Common-Mode Voltage. Gain Error vs. Temperature TS SUPPLY VOLTAGE - Volt TEMPERATURE - C V OUT vs V Supply = 3.6V V OUT vs V Supply = 2V - V G = 1 G = G = 2 - V G = 1 G = G = V SENSE- mv V SENSE- mv Small-Signal Gain vs Frequency Common-Mode Rejection vs Frequency G = 1 G = 2 G = G =, 1 G = FREQUENCY - khz FREQUENCY - khz TS112DS r1p Page

6 TS112 TYPICAL PERFORMANCE CHARACTERISTICS V RS+ = V RS- = 3.6V; T A = +2 C, unless otherwise noted. Small-Signal Pulse Response, Gain = Large-Signal Pulse Response, Gain = Input Offset Voltage Histogram 2µs/DIV 2µs/DIV Small-Signal Pulse Response, Gain = 2 Large-Signal Pulse Response, Gain = 2 2µs/DIV 2µs/DIV Small-Signal Pulse Response, Gain = 1 Large-Signal Pulse Response, Gain = 1 2µs/DIV 2µs/DIV Page 6 TS112DS r1p

7 TS112 PIN FUNCTIONS PIN SOT23 LABEL FUNCTION RS+ External Sense Resistor Power-Side Connection 4 RS- External Sense Resistor Load-Side Connection 1, 2 GND Ground. Connect these pins to analog ground. 3 OUT Output Voltage. V OUT is proportional to V SENSE = V RS+ - V RS- BLOCK DIAGRAM DESCRIPTION OF OPERATION The internal configuration of the TS112 a unidirectional high-side, current-sense amplifier - is based on a commonly-used operational amplifier (op amp) circuit for measuring load currents (in one direction) in the presence of high-common-mode voltages. In the general case, a current-sense amplifier monitors the voltage caused by a load current through an external sense resistor and generates an output voltage as a function of that load current. Referring to the typical application circuit on Page 1, the inputs of the op-amp-based circuit are connected across an external RSENSE resistor that is used to measure load current. At the non-inverting input of the TS112 (the RS+ terminal), the applied voltage is I LOAD x RSENSE. Since the RS- terminal is the non-inverting input of the internal op amp, op-amp feedback action forces the inverting input of the internal op amp to the same potential (I LOAD x RSENSE). Therefore, the voltage drop across RSENSE (V SENSE ) and the voltage drop across R GAIN (at the RS+ terminal) are equal. To minimize any additional error because of op-amp input bias current mismatch, both R GAIN s are the same value. Since the internal p-channel FET s source is connected to the inverting input of the internal op amp and since the voltage drop across R GAIN is the same as the external V SENSE, op amp feedback action drives the gate of the FET such that the FET s drainsource current is equal to: S V SE SE R A TS112DS r1p Page 7

8 TS112 or S L A x R SE SE R A Since the FET s drain terminal is connected to R OUT, the output voltage of the TS112 at the OUT terminal is, therefore; V T L A x R SE SE x R T R A The current-sense amplifier s gain accuracy is therefore the ratio match of R OUT to R GAIN. For each of the four gain options available, Table 1 lists the values for R OUT and R GAIN. The TS112 s output stage is protected against input overdrive by use of an output current-limiting circuit of 3mA (typical) and a 7V internal clamp protection circuit. Table 1: Internal Gain Setting Resistors (Typical Values) GAIN (V/V) R GAIN (Ω) R OUT (Ω) Part Number 2 4 1k TS k TS k TS k TS112-2 To achieve its very-low input offset voltage performance over temperature, voltage, and power supply voltage, the design of the TS112 s amplifier is chopper-stabilized, a commonly-used technique to reduce significantly the input offset voltage of amplifiers. This method, however, does employ the use of sampling techniques and therefore residue of the TS112 s 1kHz internal clock is contained in the TS112 s output voltage spectrum. APPLICATIONS INFORMATION Choosing the Sense Resistor Selecting the optimal value for the external RSENSE is based on the following criteria and for each commentary follows: 1) RSENSE Voltage Loss 2) V OUT Swing vs. Applied Input Voltage at V RS+ and Desired V SENSE 3) Total I LOAD Accuracy 4) Circuit Efficiency and Power Dissipation ) RSENSE Kelvin Connections 6) Sense Resistor Composition 1) RSENSE Voltage Loss For lowest IR voltage loss in RSENSE, the smallest usable value for RSENSE should be selected. 2) V OUT Swing vs. Applied Input Voltage at V RS+ and Desired V SENSE As there is no separate power supply pin for the TS112, the circuit draws its power from the applied voltage at both its RS+ and RS- terminals. Therefore, the signal voltage at the OUT terminal is bounded by the minimum supply voltage applied to the TS112. Therefore, and V OUT(max) = V RS+(min) - V SENSE(max) V OH(max) R SE SE V T max A L A max where the full-scale V SENSE should be less than V OUT(MAX) / A at the application s minimum RS+ terminal voltage. For best performance with a 3.6V power supply, RSENSE should be chosen to generate a V SENSE of: a) 12mV (for the 2V/V GAIN option), b) 6mV (for the V/V GAIN option), c) 3mV (for the 1V/V GAIN option), or d) 1mV (for the 2V/V GAIN option) at the full-scale I LOAD(MAX) current in each application. For the case where the minimum power supply voltage is higher than 3.6V, each of the four full-scale V SENSE s above can be increased. 3) Total I LOAD Accuracy In the TS112 s linear region where V OUT < V OUT(MAX), there are two specifications related to the circuit s accuracy: a) the TS112 s input offset voltage (V OS = 2μV, max) and b) its gain error (GE(max) =.%). Page 8 TS112DS r1p

9 TS112 An expression for the TS112 s total output voltage (+ error) is given by: V OUT = [GAIN x (1 ± GE) x V SENSE ] ± (GAIN x V OS ) A large value for RSENSE permits the use of smaller load currents to be measured more accurately because the effects of offset voltages are less significant when compared to larger voltages. Due care though should be exercised as previously mentioned with large values of RSENSE. 4) Circuit Efficiency and Power Dissipation IR losses in RSENSE can be large especially at high load currents. It is important to select the smallest, usable RSENSE value to minimize power dissipation and to keep the physical size of RSENSE small. If the external RSENSE is allowed to dissipate significant power, then its inherent temperature coefficient may alter its design center value, thereby reducing load current measurement accuracy. Precisely because the TS112 s input stage was designed to exhibit a very low input offset voltage, small RSENSE values can be used to reduce power dissipation and minimize local hot spots on the pcb. ) RSENSE Kelvin Connections For optimal V SENSE accuracy in the presence of large load currents, parasitic pcb track resistance should be minimized. Kelvin-sense pcb connections Figure 1: Making PCB Connections to the Sense Resistor. between RSENSE and the TS112 s RS+ and RSterminals are strongly recommended. The drawing in Figure 1 illustrates the connections between the current-sense amplifier and the current-sense resistor. The pcb layout should be balanced and symmetrical to minimize wiring-induced errors. In addition, the pcb layout for RSENSE should include good thermal management techniques for optimal RSENSE power dissipation. 6) RSENSE Composition Current-shunt resistors are made available in metal film, metal strip, and wire-wound constructions. Wire-wound current-shunt resistors are constructed with wire spirally wound onto a core. As a result, these types of current shunt resistors exhibit the largest self inductance. In applications where the load current contains high-frequency transients, metal film or metal strip current sense resistors are recommended. Internal Noise Filter In power management and motor control applications, current-sense amplifiers are required to measure load currents accurately in the presence of both externally-generated differential and commonmode noise. An example of differential-mode noise that can appear at the inputs of a current-sense amplifier is high-frequency ripple. High-frequency ripple whether injected into the circuit inductively or capacitively - can produce a differential-mode voltage drop across the external current-shunt resistor (RSENSE). An example of externallygenerated, common-mode noise is the highfrequency output ripple of a switching regulator that can result in common-mode noise injection into both inputs of a current-sense amplifier. Even though the load current signal bandwidth is DC, the input stage of any current-sense amplifier can rectify unwanted, out-of-band noise that can result in an apparent error voltage at its output. This rectification of noise signals occurs because all amplifier input stages are constructed with transistors that can behave as high-frequency signal detectors in the same way pn-junction diodes were used as RF envelope detectors in early radio designs. Against common-mode injected noise, the amplifier s internal common-mode rejection is usually sufficient. To counter the effects of externally-injected noise, it has always been good engineering practice to add external low-pass filters in series with the inputs of a current-sense amplifier. In the design of discrete current-sense amplifiers, resistors used in the external low-pass filters were incorporated into the circuit s overall design so errors because of any input-bias current-generated offset voltage errors and gain errors were compensated. With the advent of monolithic current-sense amplifiers, like the TS112, the addition of external TS112DS r1p Page 9

10 TS112 low-pass filters in series with the current-sense amplifier s inputs only introduces additional offset voltage and gain errors. To minimize or eliminate altogether the need for external low-pass filters and to maintain low input offset voltage and gain errors, the TS112 incorporates a -khz (typ), 2 nd -order differential low-pass filter as shown in the TS112 s Block Diagram. Optional Output Filter Capacitor If the TS112 is part of a signal acquisition system where its OUT terminal is connected to the input of an ADC with an internal, switched-capacitor trackand-hold circuit, the internal track-and-hold s sampling capacitor can cause voltage droop at V OUT. A 22nF to 1nF good-quality ceramic capacitor from the OUT terminal to GND forms a low-pass filters with the TS112 s R OUT and should be used to minimize voltage droop (holding V OUT constant during the sample interval. Using a capacitor on the OUT terminal will also reduce the TS112 s smallsignal bandwidth as well as band-limiting amplifier noise. PC Board Layout and Power-Supply Bypassing the RS+ and the RS- input terminals of the TS112 should be short and symmetric. Also recommended are a ground plane and surface mount resistors and capacitors. Using the TS112 in Bidirectional Load Current Applications In many battery-powered systems, it is oftentimes necessary to monitor a battery s discharge and charge currents. To perform this function, a bidirectional current-sense amplifier is required. The circuit illustrated in Figure 2 shows how two TS112s can be configured as a bidirectional current-sense amplifier. As shown in the figure, the RS+/RS- input pair of TS112 #2 is wired opposite in polarity with respect to the RS+/RS- connections of TS112 #1. Current-sense amplifier #1 therefore measures the discharge current and current-sense amplifier #2 measures the charge current. Note that both output voltages are measured with respect to GND. When the discharge current is being measured, V OUT1 is active and V OUT2 is zero; for the case where charge current is being measured, V OUT1 is zero, and V OUT2 is active. For optimal circuit performance, the TS112 should be in very close proximity to the external currentsense resistor and the pcb tracks from RSENSE to Figure 2: Using Two TS112s for Bidirectional Load Current Detection Page 1 TS112DS r1p

11 TS112 PACKAGE OUTLINE DRAWING -Pin SOT23 Package Outline Drawing (N.B., Drawings are not to scale) NOTES: 1. Dimensions and tolerances are as per ANSI Y14.M, TYP TYP 2. Package surface to be matte finish VDI 11~ Die is facing up mold and facing down for trim/form, ie, reverse trim/form. 4. The foot length measuring is based on the gauge plane method Dimensions are exclusive of mold flash and gate burr. 6. Dimensions are exclusive of solder plating. 7. All dimensions are in mm Max 8. This part is compliant with EIAJ spec. and JEDEC MO-178 AA 9. Lead span/stand off height/coplanarity are considered as special characteristic. 1º TYP º TYP º- 8º º TYP 1º TYP.1 Max Gauge Plane Max.3 Min.2 Max.9 Min Information furnished by Touchstone Semiconductor is believed to be accurate and reliable. However, Touchstone Semiconductor does not assume any responsibility for its use nor for any infringements of patents or other rights of third parties that may result from its use, and all information provided by Touchstone Semiconductor and its suppliers is provided on an AS IS basis, WITHOUT WARRANTY OF ANY KIND. Touchstone Semiconductor reserves the right to change product specifications and product descriptions at any time without any advance notice. No license is granted by implication or otherwise under any patent or patent rights of Touchstone Semiconductor. Touchstone Semiconductor assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using Touchstone Semiconductor components. To minimize the risk associated with customer products and applications, customers should provide adequate design and operating safeguards. Trademarks and registered trademarks are the property of their respective owners. Touchstone Semiconductor, Inc. Page Alder Drive, Milpitas, CA 93 TS112DS r1p +1 (48)