EFC2J004NUZ/D. Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 7.1 mω, 14 A, Dual N-Channel

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1 EFCJNUZ Power MOSFET for 1-Cell Lithium-ion Battery Protection 1 V,.1 mω, 1, Dual N-Channel This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. Features. V Drive kv ESD HBM Common-Drain Type ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance pplications 1-Cell Lithium-ion Battery Charging and Discharging Switch VSSS RSS(on) Max IS Max 1 V.1 V. V 9. V V 1 ELECTRICL CONNECTION N-Channel, SPECIFICTIONS BSOLUTE MXIMUM RTINGS at Ta = C (Notes 1, ) Parameter Symbol Value Unit Source to Source Voltage VSSS 1 V Gate to Source Voltage VGSS 8 V Source Current (DC) IS 1 Source Current (Pulse) PW s, duty cycle 1% ISP Total Dissipation (Note ) PT 1. W Junction Temperature Tj C Storage Temperature Tstg to + C 1, 1:Source1 :Gate1 :Source1 :Source :Gate :Source Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERML RESISTNCE RTINGS Parameter Symbol Value Unit Junction to mbient (Note ) R J 8 C/W Note : Surface mounted on ceramic substrate ( mm.8 mm). WLCSP,.11x1.18x. GENERIC MRKING DIGRM N YWZZ N Y W ZZ = Specific Device Code = ssembly Location = Year = Work Week = ssembly Lot =Pb-FreePackage ORDERING INFORMTION See detailed ordering and shipping information on page of this data sheet. Semiconductor Components Industries, LLC, 1 1 Publication Order Number : February 1 - Rev. 1 EFCJNUZ/D

2 EFCJNUZ ELECTRICL CHRCTERISTICS at Ta C (Notes, ) Parameter Symbol Conditions Value min typ max Unit Source to Source Breakdown Voltage V(BR)SSS IS = 1 m, VGS = V Test Circuit 1 1 V Zero-Gate Voltage Source Current ISSS VSS = V, VGS = V Test Circuit 1 1 Gate to Source Leakage Current IGSS VGS = 8 V, VSS = V Test Circuit 1 Gate Threshold Voltage VGS(th) VSS = V, IS = 1 m Test Circuit. 1. V IS =, VGS =. V Test Circuit...1 mω Static Source to Source On-State IS =, VGS =.8 V Test Circuit.1.9. mω RSS(on) Resistance (Note ) IS =, VGS =.1 V Test Circuit.. 9. mω IS =, VGS =. V Test Circuit mω Turn-ON Delay Time td(on) 1 s Rise Time tr VSS = V, VGS =.8 V, IS = s Turn-OFF Delay Time td(off) Rg = kω Test Circuit s Fall Time tf s Total Gate Charge Qg VSS = V, VGS =. V, IS = 1 Test Circuit nc Forward Source to Source Voltage VF(S-S) IS =, VGS = V Test Circuit. V Note : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note : Mounted on ON Semiconductor board.

3 EFCJNUZ Test circuits are example of measuring FET1 side Test Circuit 1 V(BR)SSS /ISSS Test Circuit IGSS S S G G VGS Gate and Source of FET Test Circuit VGS(th) Test Circuit RSS(on) S S Gate and Source of FET G G V IS VGS VGS Test Circuit td(on), tr,td(off), tf Test Circuit Qg S RL S Gate and Source of FET G V I G =1m G Rg RL DC PG Gate and Source of FET Test Circuit VF(S-S) G S IS V VGS=V When FET1 is measured,+.v is added to VGS of FET. When FET is measured, the position of FET1 and FET is switched.

4 EFCJNUZ Source Current, IS Ta= C.8V IS -- VSS.V.1V VGS=.V Source Current, IS =V IS -- VGS Ta= C -- C C Static Source to Source On-State Resistance, RSS(on) -- m Source to Source Voltage, -- V RSS(on) -- VGS Ta= C IS= 9 8 Static Source to Source On-State Resistance, RSS(on) -- m Gate to Source Voltage, V GS -- V RSS(on) -- Ta VGS=.8V, IS= V GS =.V, IS= V GS =.1V, IS = V GS =.V, IS= Source Current, IS -- Gate to Source Voltage, VGS -- V 1 8 Gate to Source Voltage, VGS -- V IS -- VF(S-S) VGS=V.1.1 Ta= C -- C C Forward Source to Source Voltage, VF(S-S) -- V VGS -- Qg. VSS=V. IS= Total Gate Charge, Qg -- nc Switching Time, SW Time -- s Source Current, IS ISP = (PW s) I S =1 mbient Temperature, Ta -- C SW Time -- Rg td (off) tf tr td(on) Gate Resistance, Rg -- k S O Operation in this area is limited by RSS(on). ms DC operation (Ta= C) ms 1ms s VSS=V VGS=.8V IS= s.1 Ta= C Single pulse Surface mounted on ceramic substrate (mm.8mm) Source to Source Voltage, -- V

5 EFCJNUZ PT -- Ta Surface mounted on ceramic substrate (mm.8mm) Total Dissipation, P T -- W Thermal Resistance, R J -- ºC/W 1 1 mbient Temperature, Ta -- C R J -- Pulse Time Duty Cycle= Single Pulse Surface mounted on ceramic substrate (mm.8mm) Pulse Time, PT -- s

6 EFCJNUZ PCKGE DIMENSIONS unit : mm WLCSP,.11x1.18x. CSE NP ISSUE B D B NOTES: 1. DIMENSIONING ND TOLERNCING PER SME Y1.M, CONTROLLING DIMENSION: MILLIMETERS. PIN 1 REFERENCE X. C X. C. C. C TOP VIEW SIDE VIEW C E SETING PLNE MILLIMETERS DIM MIN NOM MX.8..1 b...8 b1... b... D.11 BSC E 1.18 BSC e. BSC e. BSC RECOMMENDED SOLDERING FOOTPRINT* X. X. PCKGE OUTLINE X b1. M C B e 1 X BOTTOM VIEW X b. M C B b e. M C B. PITCH X. 1.8 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 1 : Source1 : Gate1 : Source1 : Source : Gate : Source ORDERING INFORMTION EFCJNUZTDG Device Marking Package Shipping (Qty / Packing) N WLCSP,.11x1.18x. (Pb-Free / Halogen Free), / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. Note on usage : Since the EFCJNUZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Please contact sales for use except the designated application. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent-marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FD Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.