PRODUCT SPECIFICATION
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1 OUTSIDE DIMENSION.. DATE:5// SOLID STATE RELAY - MOSFET OUTPUT NO.6M KAQYS SHEET OF 7 cosmo YS XXX Date Code ±. 6.8±..5Max...5 Unit.. mm Tolerance.. ±.mm Turn On / Turn Off time Input FORM A NORMALLY OPEN Output 9% % T ON T OFF Absolute Maximum Ratings Emitter(Input) (Ta=5 ) Detector(Output) Reverse Voltage 5.V Output Breakdown Voltage ± 6V Continuous Forward Current... 5mA Continuous Current ± ma Peak Forward Current A Power Dissipation 5mW Power Dissipation mw Derate Linearly from 5.mW/ General Characteristics Isolation Test Voltage 5VACrms Storage Temperature Range - to +5 Isolation Resistance Operating Temperature Range - to +85 Vio=5V,Ta=5 Ω Junction Temperature Total Power Dissipation 55mW Soldering Temperature, Derate Linearly from 5.5mW/ mm from case, sec 6
2 DATE:5// SOLID STATE RELAY - MOSFET OUTPUT NO.6M KAQYS SHEET OF 7 Electro-optical Characteristics (Ta=5 ) Parameter Symbol Conditions Min. Typ. Max. Unit. Emitter(Input) Forward Voltage V F I F =ma..5 V Operation Input Current IF ON V L =±V,I L =ma,t=ms 5. ma Recovery Input Current IF OFF V L =±V,I L 5μA. ma Detector(Output) Output Breakdown Voltage V B I B =5μA 6 V Output Off-State Leakage IT OFF V T =6V,I F =ma. μa I/O Capacitance C ISO I F =,f=mhz 6 pf ON Resistance R ON I L =ma,i F =ma.8.5 Ω Turn-On Time T ON I F =ma,v L =±V.. ms Turn-Off Time t=ms,i L =±ma.. ms T OFF Schematic and Wiring Diagrams Schematic Output Configuration Connection Wiring Diagrams V IN I F I L V L (AC,DC) a AC/DC - V IN I F I L V L(AC,DC)
3 Data Curve DATE:5// SOLID STATE RELAY - MOSFET OUTPUT NO.6M KAQYS SHEET OF 7 current vs. ambient temperature Allowable ambient Temperature.. - to +85 On resistance vs. ambient temperature across terminals and pin LED current:5ma Continuous load current:ma(dc) 7 5 current(ma) On resistance(ω) Turn On Time vs. ambient temperature voltage 6V(DC) LED current.. 5mA Continuous load current:ma(dc). Turn Off Time vs. ambient temperature voltage 6V(DC) LED current.. 5mA Continuous load current:ma(dc).5 Turn On Time(ms) Turn Off Time(ms)
4 DATE:5// SOLID STATE RELAY - MOSFET OUTPUT NO.6M KAQYS SHEET OF 7 LED operate current vs. ambient temperature Voltage:6V(DC) Continuous load current:ma(dc) LED Turn Off current vs. ambient temperature Voltage:6V(DC) Continuous load current:ma(dc) LED operate current(ma) LED Turn Off current(ma) LED dropout voltage vs. ambient temperature LED current:5 to 5mA Voltage vs. current characteristics of output at MOSFET portion Measured portion:across terminals and pin Ambient temperature:5 LED dropout voltage(v) mA ma ma ma 5mA Voltage VS. Current Characteristics Current ma Voltage V Ambient temperature:5
5 DATE:5// SOLID STATE RELAY - MOSFET OUTPUT NO.6M KAQYS SHEET 5 OF 7 LED forward current vs. Turn On Time Across terminals and pin voltage:6v(dc) Continuous load current:ma(dc) Ambient temperature:5 Off state leakage current Across terminals and pin Ambient temperature:5 Turn On Time(ms) Off state leakage current LED forward current(ma) voltage(v) LED forward current vs. Turn Off Time Across terminals and pin voltage:6v(dc) Continuous load current:ma(dc) Ambient temperature:5 Applied voltage vs. output capacitance Across terminals and pin Frequency:MHz Ambient temperature:5 Turn Off Time(ms) Output capacitance(pf) LED forward current(ma) Applied voltage(v)
6 USING METHODS Examples of resistance value to control LED forward current(if) DATE:5// SOLID STATE RELAY - MOSFET OUTPUT NO.6M KAQYS SHEET 6 OF 7 SSR-MOSFET OUTPUT (IF=5mA) R E E R.V Approx. Ω 5V Approx. 6 Ω V Approx..9K Ω 5V Approx..5K Ω V Approx..K Ω () LED forward current must be more than 5mA,at E min. () LED forward current must be less than 5mA,at E max. Emin. Emax.
7 USING METHODS DATE:5// SOLID STATE RELAY - MOSFET OUTPUT NO.6M KAQYS SHEET 7 OF 7 Regulate the spike voltage generated on the inductive load as follows: R-C Snubber
PRODUCT SPECIFICATION
OUTSIDE DIMENSION.. DATE://5 KAQY6H SHEET OF 7 Y6H XXX Date Code 7.6 6.5.8...7.5..6...5.5 Unit.. mm Tolerance.. ±.mm Turn On / Turn Off time Input FORM A NORMALLY OPEN Output 9% % T ON T OFF Absolute Maximum
PRODUCT SPECIFICATION
OUTSIDE DIMENSION.. KAQV SHEET OF 7 V XXX Date Code 7.. 7......±.... Unit.. mm Tolerance.. ±.mm Turn On / Turn Off time Input FORM A NORMALLY OPEN Output 9% %, T ON T OFF Absolute Maximum Ratings Emitter(Input)
KAQY214 Series. cosmo. 4PIN 400V N.O TYPE SOLID STATE RELAY-MOSFET Output. Description. Schematic. Features. Application 1 FORM A NORMALLY OPEN
Description The KAQY series is robust, ideal for telecom and ground fault applications. It is a SPST normally open switch ( Form A) that replaces electromechanical relays in many applications. It is constructed
PRODUCT SPECIFICATION
PRODUCT SPECIFICATION DATE:/9/ OUTSIDE DIMENSION : SOLID STATE RELAY-MOSFET OUTPUT NO.6M6 SHEET OF 7 REV. 8 XXX Date Code..7. +.5 -.5.5±. 6.8±..5Max...5 Unit:mm Tolerance:±. mm Turn on/turn off time Input
KAQY214 Series 4PIN 400V N.O TYPE SOLID STATE RELAY-MOSFET Output
Description The KAQY214 series is robust, ideal for telecom and ground fault applications. It is a SPST normally open switch (1 Form A) that replaces electromechanical relays in many applications. It is
KAQV414 Series. cosmo 6PIN 400V N.C. TYPE SOLID STATE RELAY-MOSFET OUTPUT. Description. Schematic. Features. Application
Description The KAQV series is robust, ideal for telecom and ground fault applications. It is a SPST normally close switch ( Form B) that replaces electromechanical relays in many applications. It is constructed
KAQW614 Series. cosmo 8PIN 400V N.O.+ N.C. TYPE SOLID STATE RELAY-MOSFET OUTPUT. Description. Schematic. Features. Application
Description The KAQW series contains two independent Form A and Form B SPST relays. The relay is constructed using a GaAlAs LED for actuation control and an integrated monolithic dies for the switch output.
KAQW212 Series. cosmo 8PIN 60V N.O. TYPE SOLID STATE RELAY-MOSFET OUTPUT. Description. Schematic. Features. Application
Description The KAQW series contains two normally open switches that can be used as two independent SPST relays or as one DPST relay. The relay is constructed using a GaAlAs LED for actuation control and
30 Series Photo-MOSFET Relay
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45 Series Photo-MOSFET Relay
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HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
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Applications: WEIGHT: grams (typical)
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UNISONIC TECHNOLOGIES CO., LTD UT60N03
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4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLER. EL357 Series. Features: Description. Applications
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Description Features The S110-X is a bi-directional, single-pole, single-throw, normally open multipurpose solid-state relay. The circuit is composed of one input IR LED with a series limiting resistor
GENERAL PURPOSE SOLID STATE RELAY 8PIN DIP 2-CHANNEL TYPE FORM A SSR
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8 PIN SOP PHOTOTRANSISTOR DUAL CHANNEL PHOTOCOUPLER ELD20X Series ELD21X Series
Schematic Features: Dual channel coupler Current transfer ratios offered in narrow ranges ELD205: 40-80% ELD211: >20% ELD206: 63-125% ELD213: >100% ELD207: 100-200% ELD217: >100% High isolation voltage
Taiwan Goodark Technology Co.,Ltd TGD0103M
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Capable of 2.4A to 3.5A high capacity load current control
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Distributed by: www.jameco.com -8-8- The content and copyrights of the attached material are the property of its owner. High sensitivity and low on-resistance. DIP ( Form A) -pin type. HE PhotoMOS (AQV
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Enhancement Mode N-Channel Power MOSFET
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Q817 series 4-PIN DC INPUT OPTOCOUPLER Feature: Certification & Compliance: Halogen Free
Feature: Certification & Compliance: Halogen Free Pb free and RoHS Compliant High Isolation voltage between input and output UL recognized (File # E338132) (Viso = 5000V rms) VDE recognized (File # 40030457)
Switching Diode SYMBOL. Peak reverse voltage 100 DC blocking voltage Non-repettive peak forward current 300 I FSM. A Power dissipation P D 200
Switching Diode FEATURES - Surface Mounted Device - Fast Switching Speed - Moisture sensitivity level (MSL): - Pb free and RoHS compliant MECHANICAL DATA - Case: Bend lead package - High temperature soldering
HCS70R350E 700V N-Channel Super Junction MOSFET
HCS70R350E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
Small SOP4-pin type with short circuit protecting (Latch type)
Small SOP-pin type with short circuit protecting (Latch type) GU SOP Form A Short Circuit Protection (AQYKS)..69..7..8 mm inch FEATURES. Short circuit protection (Latch type) When the output current exceeds
SDS4148G SWITCHING DIODE
SWITCHING DIODE Small Signal Fast Switching Diode General Description General-purpose switching diodes, fabricated in planar technology, and packaged in small SOD-123 surface mounted device (SMD) packages.
HCS80R1K4E 800V N-Channel Super Junction MOSFET
HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
CPC1018N. Single-Pole, Normally Open 4-Lead SOP OptoMOS Relay
CPC118N Single-Pole, Normally Open 4-Lead SOP OptoMOS Relay Parameter Rating Units Blocking Voltage 6 V P Load Current 6 ma Max On-resistance.8 LED Current to operate 1 ma Features Designed for Use in
High capacity up to 6A in a slim SIL package
High capacity up to A in a slim SIL package Power Form A High Capacity (AQZ G) New Height includes standoff.7....9 RoHS compliant mm inch Please check our website for the latest information regarding compliance
Enhancement Mode N-Channel Power MOSFET
SFG10R20xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
Device Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit
HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
T C =25 unless otherwise specified
WFW11N90 900V N-Channel MOSFET BS = 900 V R DS(on) typ = 0.93 Ω = 11 A FEATURES TO-3P Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
Slim and high capacity up to 3.6A Voltage-driven type
Slim and high capacity up to 3.A Voltage-driven type Power 1 Form A Voltage-sensitive (AQZ1 D, D) 1 3.5 1.13.7 1.5.9 (Height includes standoff) mm inch + 3 1 3 DC type AC/DC type RoHS compliant FEATURES
4 PIN DIP LOW INPUT PHOTOTRANSISTOR PHOTOCOUPLER EL8171-G Series
Schematic Features: Current transfer ratio (CTR: 50~300% at I F =0.5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up
HCS80R380R 800V N-Channel Super Junction MOSFET
HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply
GENERAL PURPOSE SOLID STATE RELAY 4PIN DIP TYPE FORM A SSR
Schematic Features Normally open signal pole signal throw relay Low operating current 60 to 600V output withstand voltage Low on resistance Wide operating temperature range of -40 C to 85 C High isolation
HCI70R500E 700V N-Channel Super Junction MOSFET
HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM
Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2
N-Channel Enhancement Mode Power MOSFET Description The HM5N06 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.