4MBI300VG-120R1-50. IGBT Power Module (V series) 1200V/300A/IGBT, 900V/300A/RB-IGBT, 4-in-1 package. IGBT Modules. (Unit : mm) [Inverter] [AC Switch]
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1 4MBI3G12R1 IGBT Power Module ( series) 12/3A/IGBT, 9/3A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit Low inductance module structure Applications Inverter for motor drive Uninterruptible powre supply Power conditioner Outline drawing (Unit : mm) Weight: 46g (typ.) Equivalent Circuit M [AC Switch] T3 G T3 E T3 [Inverter] P T1 T1 G T1,T4 E U RBIGBT Reverse Blocking T4 T4 G T2 G 1 T2 N T2 E FMF868b 21/9
2 4MBI3G12R1 Absolute Maximum Ratings (at Tc= 2 o C unless otherwise specified) Inverter Item CollectorEmitter voltage GateEmitter voltage Collector power dissipation Junction temperature Operating temperature (under switching conditions) CollectorEmitter voltage GateEmitter voltage Symbol CES GES I C I C pulse I C I C pulse 1 device Condition Tc=8 o C Tc=8 o C Maximum Rating Unit 12 ± A 6 1 W 17 ±9 ±2 Continuous Tc=8 o C 3 Collector current I 1ms Tc=8 o C pulse C 6 Collector power dissipation P C 1 device 1 Junction temperature Operating temperature (under switching conditions) T j T jop 1 12 Case temperature Storage temperature T C T stg 12 4~+12 Isolation voltage between terminal and copper base (*1 iso AC : 1min. 2 Screw Mounting (*2) M or M6 3. torque Terminal (*3) M 3. (*1) All terminals should be connected together during the test. (*2) Recommendable value : 2.3. Nm (M or M6) (*3) Recommendable value : 2.3. Nm (M) AC Switch Collector current IGBT FWD P C T j T jop CES GES I C Continuous 1ms 1 o C A W o C AC Nm 2 FMF868b 21/9
3 4MBI3G12R1 Electrical characteristics (at Tj= 2 C unless otherwise specified) Inverter Items Symbols Conditions Characteristics min. typ. max. Units Zero gate voltage GE = I CES collector current CE = 12 GateEmitter GE = I GES leakage current GE = ±2 GateEmitter CE = 2 GE(th) threshold voltage I C = 3mA ma na CollectorEmitter GE = 1 Tj= 2 o C CE(sat) saturation voltage Ic = 3A Tj=12 o C 2.2 (chip) Tj=1 o C 2.2 GE = 1 Tj= 2 o C CE(sat) Ic = 3A Tj=12 o C 2.4 (terminal) Tj=1 o C 2.4 Internal gate rasistance Input capacitance Rg(int) Cies CE =1, GE =,f=1mhz Ω nf Turnon time ton SW mode : A.6 tr CC =.2 tr (i) I C = 3A.1 μs Turnoff time toff GE = ±1.6 tf R G = +1./1ΩL S = 3nH. Forward on voltage I F = 3A Tj= 2 o C F Tj=12 o C 1.8 (chip) Tj=1 o C 1.8 I F = 3A Tj= 2 o C F Tj=12 o C 2.1 (terminal) Tj=1 o C 2. Reverse recovery time SW mode : B L S = 3nH trr CC = I F = 3A.1 μs GE = ±1 R G = +1/1Ω Zero gate voltage GE = I collector current CES CE = 9 GateEmitter CE = I leakage current GES GE = ± ma na GateEmitter GE(th) CE = I C = GE = 3mA 1 Tj= 2 o C I C = 3A Tj=12 o C GE = 1 Tj= 2 o C I C = 3A Tj=12 o C threshold voltage CollectorEmitter CE(sat) saturation voltage (chip) 2.7 CE(sat) (terminal) 2.8 Internal gate rasistance Input capacitance Rg(int) Cies CE =1, GE =,f=1mhz Ω nf Turnon time ton SW mode : B.2 tr tr (i) CC = I C = 3A.1. μs Turnoff time toff GE = ±1.3 tf R G = +1/1Ω L S = 3nH. Reverse recovery time SW mode : A L S = 3nH trr CC = I C = 3A.2 μs GE = ±1 R G = +1./1Ω Internal inductance PN 4 AC Switch Thermal resistance characteristics L PM 33 nh MN 33 Characteristics Item Symbol Condition min. typ. max. T1, T2 IGBT.1 Thermal resistance R th(jc) T1, T2 FWD.16 (1device) T3, T4 RBIGBT.8 Contact thermal resistance T1, T2 with thermal.2 R (1device) (*1) th(cf) T3, T4 compound.13 (*1) This is the value which is defined mounting on the additional cooling fin with thermal compound. 3 Units o C/W FMF868b 21/9
4 4MBI3G12R1 Definitions of switching time ~ 9% L GE tr r cc CE 9% I rr ~ Ic 9% RG GE CE A Ic 1% tr(i) 1% CE 1% ~ tf Ic tr to n t off Definitions of switching mode cc1 P M T1 G cc T3 G T3 E T3 T1 T1,T4 E U N cc T2 T4 T4 G T2 G T2 E SW mode A B Load L T1 T2 T3 T4 MU SW OFF OFF ON MU OFF SW ON OFF PU OFF OFF SW ON UN OFF OFF ON SW SW: Connect to drive circuit and input gate signal ON: Bias voltage of gate +1 OFF: Reverse bias voltage of gate 1 cc1=2 cc 4 FMF868b 21/9
5 4MBI3G12R1 [T1, T2] Collector current vs. CollectorEmitter voltage T j = 2 C / chip 6 GE = [T1, T2] Collector current vs. CollectorEmitter voltage T j = 1 C / chip 6 GE = CollectorEmitter voltage: CE [] CollectorEmitter voltage: CE [] [T1, T2] Collector current vs. CollectorEmitter voltage GE = 1 / chip 6 Tj=12 o C Tj=1 o C Tj=2 o C CollectorEmitter voltage: CE [] Collector Emitter voltage: CE [] [T1, T2] CollectorEmitter voltage vs. GateEmitter voltage Tj= 2 C / chip Ic=6A Ic=3A Gate Emitter voltage: GE [] Capacitance: C ies, C oes, C res [nf] [T1, T2] Capacitance vs. CollectorEmitter voltage (typ.) GE =, f= 1MHz, Tj= 2 o C 1 Cies 1 Cres 1 Coes CollectorEmitter voltage: CE [] Collector Emitter voltage: CE [1/div] [T1, T2] Dynamic gate charge (typ.) cc=, I C =3A, Tj=2 o C CE GE 1 1 Gate Emitter voltage: GE [/div] Gate charge: Q g [nc] FMF868b 21/
6 4MBI3G12R1 Forward current : I F [A] [T1, T2] [ SW mode A (T3,T4 RBIGBT recovery) ] Forward current vs. forward on voltage (typ.) Reverse recovery characteristics (typ.) chip cc=, GE =±1, R G =+1./1Ω(T1, T2) T j =1 o C T j =2 o C T j =12 o C Forward on voltage : F [] Reverse recovery current : I rr [A] Reverse recovery time: t rr [nsec] Irr(12 ) trr(12 ) Irr(2 ) trr(2 ) Forward current : I F [A] Reverse bias safe operating area (max.) [ SW mode B (T1,T2 FWD recovery) ] GE =+/ 1, R G Recommended,Tj = 1 o C (T1, T2) Reverse recovery characteristics (typ.) Ls=3nH, T1, T2 (Terminal) cc=, GE =±1, R G =+1/1Ω (T3, T4) RBSOA (Repetitive pulse) Reverse recovery current : I rr [A] Reverse recovery time: t rr [nsec] Irr(1 ) Irr(12 ) trr(1 ) trr(12 ) CollectorEmitter voltage: CE [] Forward current : I F [A] [ SW mode B (T1,T2 FWD recovery) ] Reverse recovery characteristics (typ.) cc=, GE =±1, R G =+1/1Ω (T3, T4) 1 Reverse recovery current : I rr [A] Reverse recovery time: t rr [nsec] Irr(2 ) trr(2 ) Forward current : I F [A] 6 7 FMF868b 6 21/9
7 4MBI3G12R1 Switching time: t on, t r, t off, t f [ nsec ] [SW mode: A] [SW mode: A] Switching time vs. Collector current (typ.) Switching time vs. gate resistance (typ.) cc=, GE =±1, R G =+1./1Ω(T1, T2) cc=, I C =3A, GE =± Tj=12 o C Tj=1 o C t r t off t f t on Switching time: t on, t r, t off, t f [ nsec ] Gate resistance: R G [Ω] (T1, T2) 1 1 Tj=12 o C Tj=1 o C t off t on t r t f Switching loss : E on, E off [mj/puls [ SW mode A ] [ SW mode A ] Switching loss vs. gate resistance (typ.) Switching loss vs. Collector current (typ.) cc=, I C =3A, GE=±1 cc=, GE =±1, R G =+1./1Ω (T1, T2) 16 E on (1 o C) E on (1 o C) 14 E on (12 o C) E off (1 o C) E off (12 o C) Switching loss : E on, E off [mj/pulse ] 12 1 E on (12 o C) 8 6 E off (1 o C) 4 E off (12 o C) Gate resistance : R G [Ω] (T1, T2) [ SW mode A (T3,T4 RBIGBT recovery) ] Switching loss vs. gate resistance (typ.) cc=, I C =3A, GE =±1 [ SW mode A (T3,T4 RBIGBT recovery) ] Switching loss vs. Collector current (typ.) cc=, GE =±1, R G =+1./1Ω (T1, T2) Switching loss : E rr [mj/pulse ] E rr (1 o C) E rr (12 o C) Gate resistance : R G [Ω] (T1, T2) 7 Switching loss : E rr [mj/pulse ] E rr (1 o C) E rr (12 o C) FMF868b 21/9
8 4MBI3G12R1 [T3, T4] [T3, T4] Collector current vs. CollectorEmitter voltage (typ.) Collector current vs. CollectorEmitter voltage (typ.) T j = 2 o C / chip T j = 12 o C / chip 6 6 GE = GE = CollectorEmitter voltage: CE [] CollectorEmitter voltage: CE [] [T3, T4] Collector current vs. CollectorEmitter voltage (typ.) GE =1 / chip T j =2 o C T j =12 o C CollectorEmitter voltage: CE [] Collector Emitter voltage: CE [] [T3, T4] ollectoremitter voltage vs. GateEmitter voltage (typ T j = 2 o C / chip I C =6A 2 I C =3A Gate Emitter voltage: GE [] Capacitance: C ies, C oes, C res [nf] [T3, T4] [T3, T4] Capacitance vs. CollectorEmitter voltage (typ.) Dynamic gate charge (typ.) GE =, f = 1MHz, T j = 2 o C 1 6. cc=, I C =3A, Tj=2 o C C ies C oes C res CollectorEmitter voltage: CE [] 8 Collector Emitter voltage: CE [1/div] CE GE Gate Emitter voltage: GE [/div] Gate charge: Q g [nc] FMF868b 21/9 1 1
9 4MBI3G12R1 [SW mode B] [SW mode B] Switching time vs. Collector current (typ.) Switching time vs. gate resistance (typ.) cc=, GE =±1, R G =+1/1Ω, Tj=12 o C (T3, T cc=, I C =3A, GE =±1, Tj=12 o C 1 1 Switching time : t on, t r, t off, t f [ nsec ] 1 1 t off t on t r t f Switching time : t on, t r, t off, t f [ nsec ] 1 1 t t r off t on t f Gate resistance: R G [Ω] (T3, T4) Switching loss: E on, E off [mj/pulse ] [SW mode B] [SW mode B] Switching loss vs. gate resistance (typ.) Switching loss vs. Collector current (typ.) cc=, I C =3A, GE =±1 cc=, GE =±1, R G =+1/1Ω (T3, T4) 7 E on (12 o C) E off (12 o C) Switching loss: E on, E off [mj/pulse ] E off (12 o C) E on (12 o C) Gate resistance: R G [Ω] (T3, T4) 3 [SW mode B(T1,T2 FWD recovery)] [SW mode B(T1,T2 FWD recovery)] Switching loss vs. gate resistance (typ.) Switching loss vs. Collector current (typ.) cc=, I C =3A, GE =±1 cc=, GE =±1, R G =+1/1Ω (T3, T4) 4 Switching loss : E rr [mj/pulse ] E rr (1 o C) E rr (12 o C) Switching loss: E rr [mj/pulse ] E rr (1 o C) E rr (12 o C) Gate resistance: R G [Ω] (T3, T4) FMF868b 21/9
10 4MBI3G12R1 1 Reverse bias safe operating area (max.) Transient thermal resistance (max.) GE =±1, R G Recommended, T j =12 o C (T3, T4) Ls=3nH, T3, T4 (Terminal) 8 Thermal resistanse: Rth(jc) [ C/W].1.1 FWD IGBT RBIGBT t n IGBT r n FWD RBIGBT Pulse width: P w [sec] 6 4 RBSOA (Repetitive pulse) CollectorEmitter voltage: CE [] Reverse recovery withstand capability for FWD Tj=1 o C 7 Reverse recovery withstand capability for RBIGBT T j = 12 o C 7 6 Pmax[T1,T2]=3kW 6 Pmax[T3,T4]=2kW IRP [A] 4 3 IRP [A] RP [] RP [] 1 FMF868b 21/9
11 4MBI3G12R1 Warnings 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of 9/21. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc.. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Trafficsignal control equipment Gas leakage detectors with an autoshutoff feature Emergency equipment for responding to disasters and antiburglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright (c) by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 11 FMF868b 21/9
12 Technical Information Please refer to URLs below for futher information about products, application manuals and technical documents. 关于本规格书中没有记载的产品信息, 应用手册, 技术资料等, 请参考以下链接 本データシートに記載されていない製品情報, アプリケーションマニュアル, 技術資料は以下の URL をご参照下さい FUJI ELECTRIC Power Semiconductor WEB site 日本 Global 中国 Europe North America Information 日本 1 半導体総合カタログ 2 製品情報 3 アプリケーションマニュアル 4 技術資料 マウンティングインストラクション 6 IGBT 損失シミュレーションソフト 7 ATNPC 3Level 損失シュミレーションソフト 8 富士電機技報 9 製品のお問い合わせ 1 改廃のお知らせ Global 1 Semiconductors General Catalog 2 Product Information 3 Application Manuals 4 Technical Documents Mounting Instructions 6 IGBT Loss Simulation Software 7 ATNPC 3Level Loss Simulation Software 8 Fuji Electric Journal 9 Contact 1 Revised and discontinued product information 中国 1 半导体综合目录 2 产品信息 3 应用手册 4 技术资料 安装说明书 6 IGBT 损耗模拟软件 7 ATNPC 3Level 损耗模拟软件 8 富士电机技报 9 产品咨询 1 产品更改和停产信息 211
Tc=25 C 150 Tc=80 C 100 Collector current
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