MCR MCR100-8 Taiwan Semiconductor. Thyristors. Small Signal Product CREAT BY ART FEATURES TO-92 MECHANICAL DATA
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1 CRET BY RT Thyristors MCR0-3 - MCR0-8 FETURES - Epitaxial planar die construction - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Packing code with suffix "G" means Green compound (Halogen free) TO-92 MECHNICL DT - Case : TO-92 plastic package - Terminal : Matte tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed - High temperature soldering guaranteed : 260 C/s - Weight : 0.19 gram (approximately) MXIMUM RTINGS ND ELECTRICL CHRCTERISTICS (T =25 C unless otherwise noted) PRMETER Forward Current RMS (ll Conduction ngles) Peak Repetitive Forward and Reverse Blocking Voltage(T J =25 C to 125 C, R GK =1KΩ) MCR0-3 MCR0-4 MCR0-5 MCR0-6 MCR0-7 MCR0-8 SYMBOL Peak Forward Surge Current,T =25 C (1/2 Cycle,Sine Wave,60Hz) Circuit Fusing Considerations(t= 8.3 ms) I TSM I 2 t s Forward Peak Gate Power (T =25 C,PW 1 μs) P GM 0.1 W Forward verage Gate Power(T =25 C) P GF(V) 0.01 W Forward Peak Gate Current(T =25 C,PW 1 μs) I GFM 1 Reverse Peak Gate Current(T =25 C,PW 1 μs) V GRM 5 V Operating junction temperature range T J -40 ~ +125 C Storage temperature range T STG -40 ~ +150 C Notes: 1. Valid provided that electrodes are kept at ambient temperature I T(RMS) V DRM V RRM VLUE UNIT V PRMETER SYMBOL MIN MX Peak Forward or Reverse Blocking Current at V K = Rated V DRM or V RRM I DRM I RRM - UNIT μ Peak Forward On-State Voltage at I TM =1 Peak, T =25 o C Gate Trigger Current (Continous dc) at node Voltage = 7 Vdc., R L =0Ω V TM V I GT μ Gate Trigger Current (Continous dc) at node Voltage = 7 Vdc., R L =0Ω at node Voltage = Rated V DRM, R L =0Ω) V Holding Current at node Voltage =7 Vdc, Initiating Current=20m I H - 5 m V GT
2 CRET BY RT MCR0-3 - MCR0-8 RTINGS ND CHRCTERISTICS CURVES (T =25 C unless otherwise noted) Gate Trigger Current (μ) Fig. 1 Typical Gate Trigger Curent VS. Gate Trigger Voltage(Volts) T J. ( O C) Fig. 2 Typical Gate Trigger Voltage VS Holding Current(μ) 0 Latching Current(μ) Fig. 3 Typical Holding Curent VS Fig. 4 Typical Lacthing Curent VS. Fig. 5 Typical RMS Current Derating Fig. 6 Typical On-State Characteristics 120 T C, Maximum llowable Case Temperature( O C) DC 30 O C 60 O C 90 O C 180 O C 120 O C I T(RMS), RMS On-State Current (MPS) I T,Instantaneous On-State Current () T J =25 o C T J =1 o C V T,Instantaneous On-State Voltage (volts)
3 CRET BY RT MCR0-3 - MCR0-8 ORDER INFORMTION (EXMPLE) MCR0 31G Green compound code Packing code Part no. PCKGE OUTLINE DIMENSIONS TO-92 (mmo) B F DIM. Unit (mm) Unit (inch) Min Max Min Max C E D G B C D E F G H H TO-92 (Bulk) DIM. Unit (mm) Unit (inch) Min Max Min Max B C D E F G H I
4 CRET BY RT MCR0-3 - MCR0-8 MRKING DIGRM x = Device P/N from 3~8
5 MCR0-3 - MCR0-8 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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