GHz Power Amplifier SST12LP00
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1 FEATURES: GHz Power Amplifier 2.4 GHz Power Amplifier APPLICATIONS: High Gain: Typically 28 db gain across GHz over temperatures 0 85 C High linear output power: >24 dbm P1dB High power-added efficiency/low operating current for Bluetooth applications ~50% PAE or 115 ma total current Pout = 23 dbm for V cc = 3.3V and GCTL = 3.0V Low idle current ~10 ma I CQ Simple input/output matching Packages available 6-contact VQFN and UQFN (3 x 1.6mm 2 ) Bluetooth USB Dongles 2.4 GHz Cordless phones PRODUCT DESCRIPTION The is a high-power and high-gain power amplifier based on the highly reliable InGaP/GaAs HBT technology. is easily configured for high-power and high-efficiency applications while operating over the GHz frequency band. This device typically provides 30 db gain with better than 50% power added P out = 23 dbm. The s excellent linearity is well suited for Class 1 Bluetooth operation. The power amplifier IC also features easy board-level usage along with high speed power up/down control. A low reference current makes ideal for the final stage power amplification in battery-powered Bluetooth, USB Dongle, or cordless phone transmitter applications. The is offered in both 6-contact VQFN and UQFN packages. See Figure 2 for pin assignments and Table 1 for pin descriptions Silicon Storage Technology, Inc. S EOL 04/09 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice.
2 GHz Power Amplifier FUNCTIONAL BLOCKS G CTL Bias/Gain Control RF OUT /V CC2 PDC V CC1 RF IN V CCb 1283 B1.1 1: Functional Block Diagram PIN ASSIGNMENTS G CTL 1 Top View (contacts facing down) RF OUT /V CC2 6 PDC 2 3 RF and DC GND V CC1 V CCb RF IN 2: Pin Assignments for 6-contact VQFN and UQFN vqfn-uqfn P1.1 PIN DESCRIPTIONS TABLE 1: Pin Description Symbol Pin No. Pin Name Type 1 Function GND 0 Ground The center pad should be connected to RF ground with several low inductance, low resistance vias. G CTL 1 Power Amplifier Gain Control PDC 2 Power-down Control RF IN 3 I RF input, DC decoupled V CCb 4 Power Supply PWR Vcc power supply, bias circuit V CC1 5 Power Supply PWR Vcc power supply, 1st stage RF OUT /V CC2 6 O/PWR Vcc power supply, 2nd stage 1. I=Input, O=Output T
3 GHz Power Amplifier ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figure 3 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under Absolute Maximum Stress Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Supply Voltage at pins 4, 5, and 6 (V CC ) V to +3.6V Power-down Control Voltage (PDC) V to V CC Gain Control Voltage (G CTL ) V to V CC Radio Frequency Input Power (RF IN ) dbm Operating Temperature (T A ) ºC to +85ºC Storage Temperature (T STG ) ºC to +120ºC Maximum Junction Temperature (T J ) ºC Surface Mount Solder Reflow Temperature C for 10 seconds Operating Range Range Ambient Temp V CC Industrial -40 C to +85 C 3.3V TABLE 2: DC Electrical Characteristics Symbol Parameter Min. Typ Max. Unit Test Conditions V CC Supply Voltage at pins 4, 5, and V I CC Supply P OUT = 23 dbm 115 ma G CTL Power Amplifier Gain Control Voltage V I GCTL Current through G CTL pin µa PDC Logic High Voltage 2.6 V Logic Low Voltage 0.8 V I CQ Idle Current (G CTL = 3.0V) 10 ma T TABLE 3: AC Electrical Characteristics Symbol Parameter Min. Typ Max. Unit F L-U Frequency range MHz P OUT Output PIN = -7 dbm, V CC = 3.3V, G CTL = 3.0V 23 dbm G Small signal gain 27 db G VAR Gain variation over band (2400~2485 MHz) db T
4 TYPICAL PERFORMANCE CHARACTERISTICS GHz Power Amplifier S11 (db) Frequency (GHz) S12 (db) Frequency (GHz) 40 0 S21 (db) S22 (db) Frequency (GHz) Frequency (GHz) 1283 Sparm1.0 3: S-parameters for 4
5 GHz Power Amplifier Power Gain (db) F3.1 4: Power Gain versus Output Power Input Power (dbm) 1283 F4.1 5: Output Power versus Input Power 5
6 GHz Power Amplifier Supply Current (ma) : Supply Current versus Output Power 1283 F PAE (%) F6.1 7: PAE versus Output Power 6
7 GHz Power Amplifier 2nd Harmonic (dbc) F7.1 8: 2nd Harmonic versus Output Power 3rd Harmonic (dbc) F8.1 9: 3rd Harmonic versus Output Power 7
8 GHz Power Amplifier 4th Harmonic (d Bc) F9.1 10: 4th Harmonic versus Output Power 5th Harmonic (dbc) F : 5th Harmonic versus Output Power 8
9 GHz Power Amplifier IMD3 (dbc) Freq=2.412 GHz Freq=2.484 GHz 1283 F : IMD3 versus Output Power 9
10 TYPICAL APPLICATION GHz Power Amplifier 50 Ω / 200 mil 2 22 pf 4 RF OUT 1 pf 2.7 nh 3 G CTL µf PDC 22 pf GND nh 1.8 pf 10 µf V CC RF IN 3.0 nh Schematic Optional and only necessary for achieving high input return loss. 2. Replaceable by 1 nh (0402) inductor for compactness. 3. Shunt capacitor can be added to the inductor to lower the 2nd harmonic. 4. LC low-pass filter can be added to lower the 2nd harmonic. 13: Typical Application Schematic (Top View) 10
11 GHz Power Amplifier PRODUCT ORDERING INFORMATION SST12LP 00 - QV6 E SST12LP XX - XXX X Environmental Attribute E 1 = non-pb contact (lead) finish F 2 = non-pb/non-sn contact (lead) finish Package Modifier 6 = 6 contact Package Type QV = VQFN QU = UQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = V Frequency of Operation 2 = 2.4 GHz Product Line 1 = SST Communications 1. Environmental suffix E denotes non-pb solder. SST non-pb solder devices are RoHS Compliant. 2. Environmental suffix F denotes non-pb/non-sn solder. SST non-pb/non-sn solder devices are RoHS Compliant. Valid combinations for -QV6E -QU6F Evaluation Kits -QV6E-K -QU6F-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. 11
12 PACKAGING DIAGRAMS GHz Power Amplifier TOP VIEW SIDE VIEW BOTTOM VIEW See paddle details Pin # ± ± Max Note: 1. Although many dimensions are simliar to those of JEDEC JEP95 MO-220I, this specific package is not registered. 2. The external paddle is electrically connected to the die back-side and possibly to certain V SS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the V SS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 3. Untoleranced dimensions are nominal target dimensions. 4. All linear dimensions are in millimeters (max/min) BSC Exposed Paddle Detail 0.25 See note mm 6-vqfn-3x1.6-QV : 6-contact Very-thin Quad Flat No-lead (VQFN) SST Package Code: QV6 12
13 GHz Power Amplifier TOP VIEW SIDE VIEW BOTTOM VIEW See paddle details Pin # ± ± Max Note: 1. Although many dimensions are simliar to those of JEDEC JEP95 MO-220I, this specific package is not registered. 2. The external paddle is electrically connected to the die back-side and possibly to certain V SS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the V SS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 3. Untoleranced dimensions are nominal target dimensions. 4. All linear dimensions are in millimeters (max/min) BSC Exposed Paddle Detail 0.25 See note mm 1 6-uqfn-3x1.6-QU : 6-Contact Ultra-thin Quad Flat No-lead (UQFN) SST Package Code: QU6 TABLE 4: Revision History Revision Description Date 00 S71283: SST conversion of data sheet GP1200 Jan Made various changes to include UQFN package Mar 2006 Updated Information in Features: on page 1 Updated Product Description on page 1 Updated Table 1 on page 2 Updated Electrical Specifications on page 3 Updated Table 2 on page 3 Updated Table 3 on page 3 Updated Figure 13 on page 10 Applied new formatting styles. 02 Updated document status from Preliminary Specification to Data Sheet Apr Updated Contact Information on page 14. Feb End of Life all valid combinations in this data sheet Apr
14 CONTACT INFORMATION GHz Power Amplifier Marketing SST Communications Corp Alla Road, Ste. 210 Los Angeles, CA Tel: Fax: Sales and Marketing Offices NORTH AMERICA ASIA PACIFIC NORTH Silicon Storage Technology, Inc. SST Macao 1171 Sonora Court Room N, 6th Floor, Sunnyvale, CA Macao Finance Center, No. 202A-246, Tel: Rua de Pequim, Macau Fax: Tel: Fax: EUROPE ASIA PACIFIC SOUTH Silicon Storage Technology Ltd. SST Communications Co. Mark House 16F-6, No. 75, Sec.1, Sintai 5 th Rd 9-11 Queens Road Sijhih City, Taipei County Hersham, Surrey Taiwan, R.O.C. KT12 5LU UK Tel: Tel: 44 (0) Fax: Fax: 44 (0) JAPAN KOREA SST Japan SST Korea NOF Tameike Bldg, 9F 6F, Heungkuk Life Insurance Bldg Akasaka, Minato-ku Sunae-Dong, Bundang-Gu, Sungnam-Si Tokyo, Japan Kyungki-Do, Korea, Tel: Tel: Fax: Fax: Silicon Storage Technology, Inc Sonora Court Sunnyvale, CA Telephone Fax or 14
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![HMC454ST89 / 454ST89E. Features. = +25 C, Vs= +5V [1]](/thumbs/96/128456064.jpg "HMC454ST89 / 454ST89E. Features. = +25 C, Vs= +5V [1]")
Typical Applications The HMC44ST8 / HMC44ST8E is ideal for applications requiring a high dynamic range amplifi er: GSM, GPRS & EDGE CDMA & W-CDMA CATV/Cable Modem Fixed Wireless & WLL Features Output IP3:
HMC457QS16G / 457QS16GE
v3.97 HMC47QS16G / 47QS16GE Typical Applications The HMC47QS16G / HMC47QS16GE is ideal for applications requiring a high dynamic range amplifi er: CDMA & W-CDMA GSM, GPRS & Edge Base Stations & Repeaters
RoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1
Features Ideal for WiMax, MESH Network, and Linear Applications P1dB: +32 dbm Typical Small Signal Gain: 34 db Typical EVM: 2.5% at 26 dbm Linear (OFDM) P OUT Integrated Detector Lead-Free 4 mm 16 lead
ICS QUAD PLL CLOCK SYNTHESIZER. Description. Features. Block Diagram PRELIMINARY DATASHEET
PRELIMINARY DATASHEET ICS348-22 Description The ICS348-22 synthesizer generates up to 9 high-quality, high-frequency clock outputs including multiple reference clocks from a low frequency crystal or clock
0.5-4GHz Low Noise Amplifier
.5-4GHz Low Noise Amplifier Features Frequency Range:.5-4 GHz Better than 2.dB Noise Figure Single supply operation db Nominal Gain dbm Nominal P1dB Input Return Loss > db Output Return Loss > db DC decoupled
DATA SHEET SE2597L: 2.4 GHz Power Amplifier with Power Detector Preliminary Information. Applications. Product Description.
Applications DSSS 2.4 GHz WLAN (IEEE802.11b) OFDM 2.4 GHz WLAN (IEEE802.11g) OFDM 2.4 GHz WLAN (IEEE802.11n) Access Points, PCMCIA, PC cards Features Single 3.3 V Supply Operation o 19 dbm, EVM = 3 %,
SGL0363Z. 5MHz to 2000MHz Low Noise Amplifier. Germanium. Simplified Device Schematic. Vpc. Narrow-band Matching Network. Gnd
5MHz to MHz Low Noise Amplifier Silicon Germanium 5MHz to MHz LOW NOISE AMPLIFIER SILICON GERMANIUM Package: SOT-363 Product Description RFMD s is a low power, low noise amplifier. It is designed for.7v
700 MHz to 4200 MHz, Tx DGA ADL5335
FEATURES Differential input to single-ended output conversion Broad input frequency range: 7 MHz to 42 MHz Maximum gain: 12. db typical Gain range of 2 db typical Gain step size:.5 db typical Glitch free,
MCP to 2.5 GHz RF Front End IC. Description
Description The contains a power amplifier (PA), a low noise amplifier (), and two SPDT switch. It is a 0pins IC by 4 4mm QFN package. RF input and output impedance of are 50Ω matched. Therefore, precious
ICS LOW EMI CLOCK GENERATOR. Features. Description. Block Diagram DATASHEET
DATASHEET ICS10-52 Description The ICS10-52 generates a low EMI output clock from a clock or crystal input. The device uses ICS proprietary mix of analog and digital Phase-Locked Loop (PLL) technology
Features. FREQUENCY 900MHz 1950MHz 2450MHz NF (db) NF (db) IIP3 (dbm) GAIN (db)
EVALUATION KIT AVAILABLE MAX// to.ghz, Low-Noise, General Description The MAX// miniature, low-cost, low-noise downconverter mixers are designed for lowvoltage operation and are ideal for use in portable
AWL /5 GHz a/b/g/n WLAN Power Amplifier Data Sheet - Rev 2.1
FEATURES. % EVM @ POUT = +1 dbm with IEEE 2.a 6 QAM OFDM at Mbps 2. % EVM @ POUT = +2 dbm with IEEE 2.g 6 QAM OFDM at Mbps - dbr ACPR 1st Sidelobe, +21 dbm, with 2.b CCK/DSSS Root Cosine Filtering, 1 Mbps
TQP PCB. DC-6 GHz Gain Block. Applications. Ordering Information
Applications Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features Cascadable Gain Block DC 6000 MHz 19.1 db Gain @ 1.9 GHz 4.7 db Noise Figure @ 1.9 GHz
SGB-6433(Z) Vbias RFOUT
SGB-6433(Z) DC to 3.5GHz ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description RFMD s SGB-6433 is a high performance SiGe HBT MMIC amplifier
4 GHz to 18 GHz Divide-by-4 Prescaler ADF5001
4 GHz to 18 GHz Divide-by-4 Prescaler ADF5001 FEATURES Divide-by-4 prescaler High frequency operation: 4 GHz to 18 GHz Integrated RF decoupling capacitors Low power consumption Active mode: 30 ma Power-down
TQP DC-6 GHz Gain Block
Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram
2GHz Balanced Mixer with Low Side LO Buffer, and RF Balun ADL5365
2GHz Balanced Mixer with Low Side LO Buffer, and RF Balun FEATURES Power Conversion Loss of 6.5dB RF Frequency 15MHz to 25MHz IF Frequency DC to 45 MHz SSB Noise Figure with 1dBm Blocker of 18dB Input
PF08103B. MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone. ADE D (Z) 5th Edition Jan Application.
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone ADE-8-785D (Z) 5th Edition Jan. 01 Application Dual band amplifier for E-GSM900 (880 MHz to 915 MHz) and DCS1800 (17 MHz to
RFVC1800 Wideband MMIC VCO with Buffer Amplifier 8GHz to 12GHz
Wideband MMIC VCO with Buffer Amplifier 8GHz to 12GHz RFMD s wideband voltage controlled oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single
MAX2387/MAX2388/MAX2389
19-13; Rev 1; /1 EVALUATION KIT AVAILABLE W-CDMA LNA/Mixer ICs General Description The MAX37/MAX3/ low-noise amplifier (LNA), downconverter mixers designed for W-CDMA applications, are ideal for ARIB (Japan)
Advanced Information: AI GHz Low Noise Amplifier. GaAs Monolithic Microwave IC
: AI1801 GaAs Monolithic Microwave IC UMS has developed a two-stage self-biased wide band monolithic Low Noise Amplifier in leadless surface mount hermetic metal ceramic 6x6mm² package. It operates from
HMC326MS8G / 326MS8GE
v9.511 AMPLIFIER, 3. - 4.5 GHz Typical Applications The HMC326MS8G / HMC326MS8GE is ideal for: Microwave Radios Broadband Radio Systems Wireless Local Loop Driver Amplifier Functional Diagram Features
RF2044 GENERAL PURPOSE AMPLIFIER
GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic Features DC to >6000MHz Operation Internally matched Input and Output 20dB Small Signal Gain 4.0dB Noise Figure
Features. = +25 C, Vcc = +5V, Z o = 50Ω, Bias1 = GND
v1.612 Typical Applications The is ideal for: LO Generation with Low Noise Floor Clock Generators Mixer LO Drive Military Applications Test Equipment Sensors Functional Diagram Features Low Noise Floor:
Features. = +25 C, IF = 200 MHz, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V*
v4.1 Typical Applications The HMC685LP4(E) is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +35 dbm 8 db Conversion
Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
GPS Low Noise Amplifier with Integrated Input/Output SAW Filters RF2818 GPS LOW NOISE AMPLIFIER WITH INTEGRATED INPUT/OUTPUT SAW FILTERS Package: Module, 3.0mmx2.5mmx1.0mm Features Compact Footprint: 3.0mmx2.5mmx1.0mm
Typical Performance 1. Absolute Maximum Ratings
Device Features +5V/680mA at operating bias condition Gain = 27.3 db @ 1850 MHz P1dB = 33.1 dbm @ 1850MHz LTE 10M ACLR = 23.5dBm Output Power at -50dBc @ 1850MHz Intergrated interstage matching Lead-free/Green/RoHS-compliant
DATA SHEET SE2598L: 2.4 GHz Power Amplifier with Power Detector Preliminary Information. Applications. Product Description.
Applications DSSS 2.4 GHz WLAN (IEEE802.11b) OFDM 2.4 GHz WLAN (IEEE802.11g) OFDM 2.4 GHz WLAN (IEEE802.11n) Access Points, PCMCIA, PC cards Features Single 3.3 V Supply Operation o 19 dbm, EVM = 3 %,
Features = +5V. = +25 C, Vdd 1. = Vdd 2
v1.11 HMC51LP3 / 51LP3E POWER AMPLIFIER, 5-1 GHz Typical Applications The HMC51LP3(E) is ideal for: Microwave Radio & VSAT Military & Space Test Equipment & Sensors Fiber Optics LO Driver for HMC Mixers
AG302-86PCB. Product Features. Product Description. Functional Diagram. Applications. Typical Performance (1) Specifications (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz +. dbm PdB @ 9 MHz +6 dbm OIP@ 9 MHz Single Voltage Supply Internally matched to Ω Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications