SGM Watt Audio Power Amplifier GENERAL DESCRIPTION FEATURES. PIN CONFIGURATIONS (Top View) APPLICATIONS

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1 . Watt Audio Power Amplifier GENERAL DESCRIPTION The is a.-w, fully integrated, audio power amplifier. It is designed to maximize audio performance in portable applications such as mobile phone. The portable application requires audio power amplifier has minimum of external components and can operate from a single.v to.v power supply. is capable of delivering.w of continuous output power with less than % distortion THD + N when it drives an 8Ω speaker from a.v power supply. The features a low-power consumption shutdown mode, which is achieved by driving the shutdown pin with a logic low. Additionally, the features an internal thermal shutdown protection mechanism. The does not require output coupling capacitors or bootstrap capacitors, and therefore is ideally suited for mobile phone and other low voltage applications where minimal power consumption is a primary requirement. FEATURES Ideal for Notebook Computers, PDAs, and Other Small Portable Audio Devices.W to 8-Ω BTL Load from V Supply at THD =% (Typical) Excellent PSRR: Direct Connection to the Battery Fast Turn On Time Unity Gain Stable.V to.v Operation Shutdown Current:.µA Typical Shutdown Pin is Compatible with.8v Logic to +8 Operating Temperature Range Small Packaging PIN CONFIGURATIONS (Top View) A -IN VO +IN For maximum flexibility, the provides an externally controlled gain (with resistors), as well as an externally controlled turn-on time (with the bypass capacitor). When using a µf bypass capacitor, it offers ms wake up time when V+ is equal to.v. B C GND Bypass GND VO V+ SHDN The is available in CSP-9 and MSOP-8 packages. It operates over an ambient temperature range of to +8. CSP-9 APPLICATIONS Portable Systems MP Players Mobile Phone PDAs GPS SHDN Bypass +IN VO GND V+ -IN VO MSOP-8 SG Microelectronics Co, Ltd Tel: 86//7986/8 REV. A

2 ELECTRICAL CHARACTERISTICS : TA = PARAMETER SYMBOL CONDITIONS Quiescent Power Supply Current I Q V IN = V, I O = A, MIN TYP MAX, No Load 8, 8 Ω Load 6 V + = +.6V, No Load.7 V + = +.6V, 8 Ω Load.7 V + = +.V, No Load. 7 V + = +.V, 8 Ω Load. 9 V + = +.6V, No Load. V + = +.6V, 8 Ω Load. Shutdown Current I SD V SHUTDOWN = V,.. µa Shutdown Voltage Input High V SDIH. V Shutdown Voltage Input Low V SDIL. V Output Offset Voltage V OS mv. Output Power (8 Ω) P O f = khz, THD+N=% V + = +.6V.8 W V + = +.V. V + = +.6V. Total Harmonic Distortion + Noise THD+N P O =.Wrms, f = khz. % UNITS ma -66 f = 7Hz V + = +.6V V + = +.V -6-6 Power Supply Rejection Ratio PSRR V + = +.6V -6-7 db f = khz V + = +.6V V + = +.V V + = +.6V -6 Wake up Time T WU C BYPASS = µf V + = +.6V V + = +.V ms V + = +.6V Shut Down Time T SDT 8 Ω Load V + = +.6V V + = +.V µs V + = +.6V 7.8 Specifications subject to changes without notice.

3 PACKAGE/ORDERING INFORMATION MODEL ORDER NUMBER PACKAGE DESCRIPTION PACKAGE OPTION MARKING INFORMATION YG/TR CSP-9 Tape and Reel, 89YG YMS/TR MSOP-8 Tape and Reel, YMS ABSOLUTE MAXIMUM RATINGS Supply Voltage V Input Voltage ( VS) -. V to (+VS) +.V Storage Temperature Range to + Junction Temperature Operating Temperature Range to +8 Lead Temperature Range (Soldering sec) NOTES. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CAUTION This integrated circuit can be damaged by ESD. SG Micro-electronics recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. TYPICAL APPLICATION

4 TYPICAL PERFORMANCE CHARACTERISTICS V OUT+ or V OUT- Large Sine Signal Response Large Signal Step Response Output Voltage(mV/div) V + =.6V Output Voltage(mV/div) V + =.6V Time(µs/div) Time(µs/div) V OUT+ or V OUT- Large Sine Signal Response Large Signal Step Response V + = V V + = V Output Voltage(mV/div) Output Voltage(mV/div) Time(µs/div) Time(µs/div) V OUT+ or V OUT- Large Sine Signal Response Large Signal Step Response V + =.6V V + =.6V Output Voltage(mV/div) Output Voltage(mV/div) Time(µs/div) Time(µs/div)

5 TYPICAL PERFORMANCE CHARACTERISTICS V OUT+ or V OUT- Large Sine Signal Response Large Signal Step Response Output Voltage(mV/div) Output Voltage(mV/div) Time(µs/div) Time(µs/div) Small Signal Frequency Response Quiescent Current vs.temperature 7,V,.6V V IN = -dbm 6 Normalized Gain(dB) - -6 Quiescent Current(mA) V + =.6V V + = V V + =.6V -9.. Frequency(MHz) Temperature( ) Output Offset Voltage vs.temperature Supply Current vs.shutdown Voltage Output Offset Voltage(mV) Supply Current(mA) OFF ON Temperature( ) - Shutdown Voltage(V)

6 TYPICAL PERFORMANCE CHARACTERISTICS Supply Current vs.shutdown Voltage V + =.6V Supply Current vs.shutdown Voltage V + =.6V Supply Current(mA) OFF ON Supply Current(mA) V + = V V + =.6V - Shutdown Voltage(V) - Shutdown Voltage(V).9 Clipping(Dropout) Voltage vs.supply Voltage Power Dissipation vs.output Power Dropout Voltage(V) R L = 8Ω Top R L = Ω Top R L = Ω Bottom R L = 8Ω Bottom 6 Supply Voltage(V) Power Dissipation (W) R L = 8 f = khz THD.% Output Power (W). Power Dissipation vs.output Power Power Dissipation(W)..... V + = V R L = 8 f = khz THD.%..... Output Power(W) 6

7 PACKAGE OUTLINE DIMENSIONS MSOP-8 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A A....8 A b. TYP. TYP c. TYP.6 TYP D.9... e.6 TYP.6 TYP E.9... E L θ 6 6 7

8 PACKAGE OUTLINE DIMENSIONS CSP-9.8±..6±..±.. 9.±.. A CORNER.±. C. B A Note: All linear dimensions are in millimeters. 8

9 REVISION HISTORY Location Page 9/7 Preliminary Datasheet /7 Data Sheet REV.A SG Microelectronics Co., Ltd A68, NO.7 North Road Xisanhuan, Haidian District, Beijing, China 7 Tel: /8 Fax:

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