SG2000. Features. Description. High Reliability Features. Partial Schematics HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS

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1 HIGH OLTAGE MEDIUM CURRENT DRIER ARRAYS SG2000 Description The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applicatio that require severe environments. units feature open collector outputs with greater than 50 breadown voltages combined with ma current carrying capabilities. Five different input configuratio provide optimized desig for interfacing with DTL, TTL, PMOS, or CMOS drive signals. These devices are designed to operate from -55 C to 125 C ambient temperature in a 16 pin dual in line ceramic (J pacage and 20 pin Leadless Chip Carrier (LCC. The plastic SOIC (DW is designed to operate over the commercial temperature range of 0 C to 70 C. Partial Schematics Features Seven NPN Darlington Pairs -55 C to 125 C Ambient Operating Temperature Range Collector Currents to 600mA Output oltages from 50 to 95 Internal Clamping Diodes for Inductive Loads DTL, TTL, PMOS, or CMOS Compatible Inputs Hermetic Ceramic Pacage High Reliability Features Following are the high reliability features of SG2000 series: Available To MIL-STD , Available to DSCC - Standard Microcircuit Drawing (SMD MIL-M38510/14101BEA - SG2001J-JAN MIL-M38510/14102BEA - SG2002J-JAN MIL-M38510/14103BEA - SG2003J-JAN MIL-M38510/14104BEA - SG2004J-JAN - MSC-AMS Level "S" Processing Available Figure 1 Partial Schematics December 2014 Rev Microsemi Corporation

2 Absolute Maximum Ratings (Note 1 Output oltage, CE (SG2000, 2010 series... (SG2020 series... Input oltage, IN (SG2002,3, Continuous Input Current, I IN... 25mA Note 1. alues beyond which damage may occur. Thermal Data J Pacage: Thermal Resistance-Junction to Case, θ JC C/W Thermal Resistance-Junction to Ambient, θ JA C/W DW Pacage: Thermal Resistance-Junction to Case, θ JC C/W Thermal Resistance-Junction to Ambient, θ JA C/W L Pacage: Thermal Resistance-Junction to Case, θ JC C/W Thermal Resistance-Junction to Ambient, θ JA C/W Recommended Operating Conditio Pea Collector Current, (SG2000, (SG Operating Junction Temperature Hermetic (J, L Pacages... Plastic (DW Pacage... ma 600mA 150 C 25 C Storage Temperature Range C to 150 C Lead Temperature (Soldering 10 sec C RoHS Pea Pacage Solder Reflow Temp. (40 sec. max. exp C (+0, -5 Note A. Junction Temperature Calculation: T J = + (P D x θ JA. Note B. The above numbers for θ JC are maximums for the limiting thermal resistance of the pacage in a standard mounting configuration. The θ JA numbers are meant to be guidelines for the thermal performance of the device/pc-board system. of the above assume no ambient airflow. (Note 2 Output oltage, CE SG2000, SG2010 series SG2020 series Note 2. Range over which the device is functional. Selection Guide Device CE Max Max Logic Inputs SG ma General Purpose PMOS, CMOS SG ma PMOS SG ma 5 TTL, CMOS SG ma 6-15 CMOS, PMOS SG mA General Purpose PMOS, CMOS SG mA PMOS Pea Collector Current, SG2000, SG2020 series... 50mA SG2010 series... ma Operating Ambient Temperature Range SG2000 Series - Hermetic C to 125 C SG2000 Series - Plastic... 0 C to 70 C Device CE Max Max Logic Inputs SG mA 5 TTL, CMOS SG mA 6-15 CMOS, PMOS SG mA High Output TTL SG ma General Purpose PMOS, CMOS SG ma 5 TTL, CMOS SG ma 6-15 CMOS, PMOS 2

3 Electrical Characteristics (Unless otherwise specified, these specificatio apply over the operating ambient temperatures for SG2000 series - Hermetic - with -55 C 125 C and SG2000 series - Plastic - with 0 C 70 C. Low duty cycle pulse testing techniques are used which maintai junction and case temperatures equal to the ambient temperature. SG2001 thru SG2004 Applicable Limits Parameter Temp. Test Conditio Units Devices Min Typ Max Output Leaage Current (EX Collector - Emitter ( CE(SAT Input Current (I IN(ON Input Current (I IN(OFF Input oltage ( IN(ON DC Forward Current Trafer Ratio (h FE Input Capacitance (C IN (Note 3 Turn-On Delay (TPLH Turn-Off Delay (TPHL Clamp Diode Leaage Current (I R Clamp Diode Forward oltage ( F SG2002 SG2004 SG2002 SG2003 SG2004 SG2002 SG2003 SG2004 SG2001 Note 3. These parameters, although guaranteed, are not tested in production. CE = 50 CE = 50, IN = 6 CE = 50, IN = 1, I B = 850 = 550 = 350, I B = = 350 =, I B = = 350 = IN = 17 IN = 3.85 IN = 5 IN = 12 = CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, = 125mA CE = 2, CE = 2, CE = 2, CE = 2, = 125mA CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, R = 50 I F ma pf 3

4 Electrical Characteristics (continued SG2011 thru SG2015 Parameter Output Leaage Current (EX Collector - Emitter ( CE(SAT Input Current (I IN(ON Input Current (I IN(OFF Input oltage ( IN(ON DC Forward Current Trafer Ratio (h FE Input Capacitance (C IN (Note 3 Turn-On Delay (TPLH Turn-Off Delay (TPHL Clamp Diode Leaage Current (I R Clamp Diode Forward oltage ( F Applicable Devices SG2012 SG2014 SG2012 SG2013 SG2014 SG2015 SG2012 SG2013 SG2014 SG2015 SG2011 Temp. Test Conditio CE = 50 CE = 50, IN = 6 CE = 50, IN = 1, I B = 1100, I B = 850 = 550, I B = 600, I B = = 350, I B = 600, I B = = 350 IN = 17 IN = 3.85 IN = 5 IN = 12 IN = 3 = CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, R = 50 I F I F Min Limits Typ Max Units ma pf Note 3. These parameters, although guaranteed, are not tested in production. 4

5 Electrical Characteristics (continued SG2021 thru SG2024 Parameter Output Leaage Current (EX Collector - Emitter ( CE(SAT Input Current (I IN(ON Input Current (I IN(OFF Input oltage ( IN(ON DC Forward Current Trafer Ratio (h FE Input Capacitance (C IN (Note 3 Turn-On Delay (TPLH Turn-Off Delay (TPHL Clamp Diode Leaage Current (I R Clamp Diode Forward oltage ( F Applicable Devices SG2024 SG2023 SG2024 SG2023 SG2024 SG2021 Temp. Note 3. These parameters, although guaranteed, are not tested in production. Test Conditio CE = 95 CE = 95, IN = 1, I B = 850 = 550 = 350, I B = = 350 =, I B = = 350 = IN = 3.85 IN = 5 IN = 12 = CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, = 125mA CE = 2, CE = 2, CE = 2, CE = 2, = 125mA CE = 2, CE = 2, CE = 2, CE = 2, CE = 2, R = 95 I F Limits Min Typ Max Units ma pf 5

6 Characteristic Curves FIGURE 2. OUTPUT CHARACTERISTICS FIGURE 3. OUTPUT CURRENT S. INPUT OLTAGE FIGURE 4. OUTPUT CURRENT S. INPUT CURRENT FIGURE 5. INPUT CHARACTERISTICS - SG2002 FIGURE 6. INPUT CHARACTERISTICS - SG2003 FIGURE 7. INPUT CHARACTERISTICS - SG2004 FIGURE 8. PEAK COLLECTOR CURRENT S. DUTY CYCLE 6

7 Connection Diagrams and Ordering Information (See Notes Below Pacage Ambient Part No. (Note 3 Temperature Range Connection Diagram 16-PIN CERAMIC DIP J - PACKAGE SG2XXXJ-883B -55 C to 125 C SG2023J-DESC -55 C to 125 C SG2001J-JAN -55 C to 125 C SG2002J-JAN -55 C to 125 C SG2003J-JAN -55 C to 125 C SG2004J-JAN -55 C to 125 C SG2XXXJ -55 C to 125 C PIN PLASTIC SOIC DW - PACKAGE SG2003DW 0 C to 70 C SG2023DW 0 C to 70 C DW Pacage: RoHS Compliant / Pb-free Traition DC: 0516 DW Pacage: RoHS / Pb-free 100% Matte Tin Lead Finish 20-PIN CERAMIC LEADLESS CHIP CARRIER L- PACKAGE SG2XXXL-883B -55 C to 125 C SG2XXXL -55 C to 125 C Note 1. Contact factory for JAN and DESC product availability. 2. parts are viewed from the top. 3. See selection guide for specific device types. 4. DW Pacage (Not Pictured is 16-Pin Wide Body SOIC, same pinout as J pacage pictured above. 5. Hermetic Pacages J and L use Pb37/Sn63 hot solder lead finish, contact factory for availability of RoHS versio. 7

8 Pacage Outline Dimeio Controlling dimeio are in inches, metric equivalents are shown for general information. H E Seating Plane D b2 e b Q A L c ea α DIM Note: MILLIMETERS INCHES MIN MAX MIN MAX A b b c D E e 2.54 BSC* BSC ea H L α Q *BSC: Basic Spacing Between Centers Dimeio do not include protrusio; these shall not exceed 0.155mm (.006 on any side. Lead dimeion shall not include solder coverage. Figure 9 J 16-Pin CERDIP Pacage Dimeio Dim MILLIMETERS INCHES MIN MAX MIN MAX A A A B c D E e 1.27 BSC 0.05 BSC H L θ *LC *Lead co planarity Note: Figure 10 DW 16-Pin SOWB Pacage Dimeio Dimeio do not include protrusio; these shall not exceed 0.155mm (.006 on any side. Lead dimeion shall not include solder coverage. Dimeio are in mm, inches are for reference only. 8

9 Pacage Outline Dimeio (continued E3 A A1 A2 h 3 1 D L2 18 B1 e E L 8 B3 13 Dim Note: MILLIMETERS INCHES MIN MAX MIN MAX D/E E e BSC BSC B TYP TYP L A h TYP TYP A A L B R 0.008R exposed metalized area shall be gold plated 60 micro-inch minimum thicness over nicel plated unless otherwise specified in purchase order. Figure 11 L 20-Pin Ceramic LCC Pacage Outline Dimeio 9

10 Microsemi Corporate Headquarters One Enterprise, Aliso iejo, CA USA Within the USA: +1 ( Outside the USA: +1 ( Sales: +1 ( Fax: +1 ( Microsemi Corporation. rights reserved. Microsemi and the Microsemi logo are trademars of Microsemi Corporation. other trademars and service mars are the property of their respective owners. Microsemi Corporation (Nasdaq: MSCC offers a compreheive portfolio of semiconductor and system solutio for communicatio, defee & security, aerospace and industrial marets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutio, setting the world s standard for time; voice processing devices; RF solutio; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspa; as well as custom design capabilities and services. Microsemi is headquartered in Aliso iejo, Calif., and has approximately 3,400 employees globally. Learn more at Microsemi maes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applicatio. Any performance specificatio are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or italled in, any end-products. Buyer shall not rely on any data and performance specificatio or parameters provided by Microsemi. It is the Buyer's respoibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire ris associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licees, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to mae any changes to the information in this document or to any products and services at any time without notice. SG2000.1/12.14

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