HIGH POWER ELECTRONICS FOR ARMOR AND ARMAMENT

Transcription

1 HIGH POWER ELECTRONICS FOR ARMOR AND ARMAMENT PRESENTED BY Dave Singh U.S.ARMY RESEARCH LABORATORY WEAPONS AND MATERIALS RESEARCH DIRECTORATE AT EPRI/DARPA POST SILICON MEGAWATT REVIEW Jan , Monterey, CA

2 COMBAT SYSTEM - CONCEPT E Gun

3 Electric Armaments Long Pole Pulse Forming Network Breech Projectile ELECTROTHERMAL CHEMICAL GUN: Mostly chemical energy Prime Power Plasma Cartridge Propellant Armature Projectile ELECTROMAGNETIC RAILGUN: Pulsed Power Supply All electric Prime Power Long Pole Conducting Rails

4 parasitic resistance launch coil cap. bank plate HV switch.3.2 Current (M Time (ms) 6/5/

5 PULSED POWER CONDITIONING TECHNOLOGY SWTICH TECHNOLOGY STATUS Thyristor Involute Gate SG TVS THYRISTOR ` Si Si C Peak Current-kA 3 (1) 125 (5) 15 (3) 5 Peak Voltage-kV >1 1 6 (1) 25 Action-MA 2.S 5 (5) 1 (5) 22 (36) 1 Voltage Drop-V 5(2) 1 (4) <2 <3 SG - Spark Gap TVS - Triggered Vacume Switch

6 125 mm THYRISTOR CHARACTERIZATION INVOLUTED GATE Weapons & Materials Research Directorate Power (MW) ka at 85 µs Power -6 Current Voltage -1.5 Voltage (kv) -1 Time (ms) -2. C. H. & H. S. 8/18/98

7 125 mm THYRISTOR CHARACTERIZATION INVOLUTED GATE Weapons & Materials Research Directorate Power (MW) Power Current Voltage Voltage (kv) Time (ms) C.H & H.S 8/18/98

8 125 mm THYRISTOR CURRENT Weapons & Materials Research Directorate V anode = 3.5 kv Current ( ka ) Time ( m S )

9 125 mm THYRISTOR CURRENT AND VOLTAGE Weapons & Materials Research Directorate V anode = 3.5 kv Current ( ka ) Current 3. Voltage Time ( m S ) Voltage ( kv )

10 Pulse Power Thyristors Features* Longer Gate Line Higher Lifetime No Emitter Shorts High Interdigitation* 125mm 5kV Involute Results* Higher di/dt Lower Forward Drop Faster Plasma Spread Projected Rating > 15kA/µs, > 2 ka Tested To: > 3.3kA/µs, 175 ka peak

11 PEBB AC-MODULE TEST SCHEMATIC Weapons & Materials Research Directorate EXTERNAL DIODE 4 mf INTERNAL DIODE H. V. PROBES

12 Weapons & Materials Research Directorate PEBB AC-MODULE CURRENT Current ( ka ) V 738 V 59 V 27 V 11 V Time ( m S )

13 Weapons & Materials Research Directorate PEBB AC-MODULE CURRENT V charge = 1.12 kv 8 A 2 S Current ( ka ) Time ( m S ) 32 A 2 S

14 PEBB AC-MODULE VOLTAGE DROP Weapons & Materials Research Directorate.1 V charge = 1.12 kv. -.1 Voltage ( kv ) Peak Current 5.5 ka 7.4 ka 8.5 ka 1.3 ka 13.5 ka Time ( m S )

15 High-Rep Rate Trigger Generator Using PEBB Burst Storage Capacitor Supplies energy to recharge spiker and sustainer. Eliminate high power supply for limited burst operation. Spiker Circuit Generates high-voltage pulse to breakdown the vacuum switch plasma gun. Supplies 6 kv, 1 ns risetime voltage pulse Sustainer Circuit Delivers sustained high-current pulse to drive trigger plasma to close the vacuum switch. Generates 1 ka with a 8 microsecond FWHM pulse. 2 mh Burst Storage Capacitor Charge Thyristor V Charging Diode 1 Ω 2µF Charging Diode RC Snubber MCT Spiker Circuit 1:7 Pulse Transformer 2 nh 2 nh 2 nh 2 nh 2µF 2µF 2µF 2µF MCT Blocking Diode.278 Ω Plasma Gun Load RC Snubber Sustainer Circuit

16 Burst Performance at 5 pps Trigger Current (Amperes) Ten shot burst at 5 pps Ten shot burst at 5 pps. (Note time axis is discontinuous between current pulses.) Detail of the fourth voltage pulse in the 1 shot burst. The trigger pin breaks down at 2 kv Trigger Current (Amperes) Trigger Voltage (Volts) x x Detail of fourth current pulse in the 1 shot burst showing >1 ka current and 8 µs pulse width.

17 Benefits and Future Directions Future Directions Further reduce volume by utilizing MCT current interruption capability to eliminating PFN portion of the sustainer circuit Plasma Gun Spiker Circuit Load 2 mh Charge Thyristor V Burst Storage Capacitor Charging Diode 1 Ω 2µF MCT RC Snubber MCT 1:7 Pulse Transformer 1.4 Ω 1.4 Ω Blocking Diode Sustainer Circuit Benefits of using MCTs in repetitive trigger generators High repetition capability. Fast turn-on di/dt. High peak current capability. Current interruption capability. Compact, light-weight, highvoltage triggering capability for electric weapon systems. MCT 1.4 Ω MCT 1.4 Ω MCT

18 SWITCH REQUIREMENTS LIFE TIME > 1 Bursts RELIABILITY Graceful Degradation POWER DENSITY > 2Mw/m 3 IDEAL SWITCH MODULARITY Series/ Parallel DI/DT > 1ka/ms INTELLIGENCE Diagonostics/ Self Prot. CONTROL mp/laser HIGH TEMP. OPERATION > 3 C Reduce Thermal Management - 6 Fold BATTLE FIELD HARDENED

19 SUMMARY High Power Electronics is Enabling Technology for Future Combat Platforms, which are envisioned to be compact and light; yet must be more MOBILE,LETHAL and SURVIVABLE. Silicon based Switch development is necessary to aid accelerated development of future systems and novel material Switches. ARL-WMRD has mission to develop technologies to enhance LETHALITY AND SURVIVABILITY of FUTURE COMBAT PLATFORMS.