NJU7056/NJU7057/NJU7058

Transcription

1 Equivalent Input Noise oltage [n/ Hz] Input Offset oltage [m] Low Noise, Low Offset oltage Drift Rail-to-Rail Output CMOS Operational Amplifier FEATURES( + =5, - =, Ta=5 C) Low Noise 5n/ Hz Low Offset oltage Drift.7µ/ C typ. Offset oltage 4m max. Rail-to-Rail Output R L =kω 5m from rail R L =6Ω 4m from rail Gain Bandwidth Product.MHz Slew Rate.8/µs Supply Current 6µA/ch typ. Supply oltage.8 to 5.5 Thin and Ultra Small Package DFN8-U(ESON8-U). x. x.4 mm RF noise Immunity Ground sense Unity-Gain Stable Package NJU756 SOT-3-5, SC-88A NJU757 MSOP8(TSP8)* DFN8-U(ESON8-U) *meet JEDEC MO-87-DA / thin type NJU758 SSOP4 GENERAL DESCRIPTION The are Single/Dual/ Quad rail-to-rail output CMOS operational amplifiers. Low noise of 5n/ Hz and low offset drift of.7µ/ C typ. make them suitable for several sensor amplifiers and preamplifiers. operate from.8 to 5.5 supply voltage. They are optimized for -cell battery systems and -cell li-ion battery systems. The NJU756/NJU757/NJU768 have high-impedance inputs with ground sense, rail-to-rail output that swings within 5m from rail with kω load at.8 supply,.mhz Gain bandwidth and.8/µs Slew rate. These characteristics make them excellent performance for general-purpose applications. The NJU756 is available in 5-pin SC-88A and SOT-3 package. NJU757 is available in 8-pin MSOP (TSP): meet JEDEC MO-87-DA / thin type package and DFN that is thin and mm square small package. NJU758 is available in 4-pin SSOP package. APPLICATION Battery-powered instruments Current sensor amplifiers Audio pre/mic. amplifiers Power line monitoring Current to oltage converter RELATED PRODUCTS Features Single Dual Quad 3µA/ch, Rail-to-rail Output (Low power type) NJU76 NJU77 NJU78 9/µs, 5MHz, Rail-to-rail I/O (High slew rate type) NJU746 NJU747 NJU748 TYPICAL CHARACTERISTICS 8 oltage Noise Density vs. Frequency + =5, Ta=5ºC 3 Input Offset oltage vs. Temperature + =5, ICM =, n= k k Frequency [Hz] Ambient Temperature [ºC] - -

2 PIN CONFIGURATION PART NUMBER NJU756F NJU756F3 Package Outline SOT-3-5 SC-88A (Top iew) Pin Function +INPUT INPUT 3 4 OUTPUT PART NUMBER NJU757RB NJU757KU Package Outline MSOP8(TSP8) ESON8-U Pin Function A OUTPUT A -INPUT A +INPUT (Top iew) B OUTPUT B -INPUT B +INPUT A OUTPUT A -INPUT A +INPUT (Top iew) Exposed Pad on Underside B OUTPUT B -INPUT B +INPUT *Connect to exposed pad to - PART NUMBER Package Outline NJU758 SSOP4 (Top iew) A OUTPUT 4 D OUTPUT A -INPUT 3 D -INPUT Pin Function A +INPUT + B +INPUT D +INPUT - C +INPUT B -INPUT 6 9 C -INPUT B OUTPUT 7 8 C OUTPUT MARK INFORMATION NJU757 RB (TE) Part Number Package Taping Form ORDERING INFORMATION PART PACKAGE HALOGEN- TERMINAL WEIGHT MOQ RoHS MARKING NUMBER OUTLINE FREE FINISH (mg) (pcs) NJU756F SOT-3-5 yes yes SnBi 9 5 3, NJU756F3 SC-88A yes yes SnBi AG 7.5 3, NJU757RB MSOP8(TSP8) yes yes SnBi 757 8, NJU757KU ESON8-U yes yes SnBi , NJU758 SSOP4 yes yes SnBi , - -

3 Power Dissipation P D [mw] Power Dissipation P D [mw] ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Supply oltage Input oltage () IN to Input Current () I IN ma Differential Input oltage (3) ID ±7 Power Dissipation(Ta=5 ) SOT-3-5 (4) (-layer / 4-layer) 48 / 65 SC-88A (4) 36 / 49 MSOP8(TSP8) (4) P D 5 / 68 mw DFN8-U(ESON8-U) (5) SSOP4 (4) 45 / 5 / 6 Junction Temperature T jmax +5 C Storage Temperature Range T stg - 55 to +5 C () The absolute maximum input voltage is limited at 7. () Input voltages outside the supply voltage will be clamped by ESD protection diodes. If the input voltage exceeds the supply voltage, the input current must be limited ma or less by using a restriction resistance. (3) Differential voltage is the voltage difference between +INPUT and - INPUT. For supply voltage less than +7, the absolute maximum rating is equal to the supply voltage. THERMAL CHARACTERISTICS PARAMETER SYMBOL ALUE UNIT Junction-to-ambient thermal resistance (-layer / 4-layer) SOT-3-5 (4) 59 / 93 SC-88A (4) 35 / 56 MSOP8(TSP8) (4) θja C /W 44 / 85 DFN8-U(ESON8-U) (5) 78 / 7 SSOP4 (5) 49 / Junction-to-Top of package characterization parameter (-layer / 4-layer) SOT-3-5 (4) 67 / 58 SC-88A (4) 9 / 73 MSOP8(TSP8) (4) ψjt C /W 5 / 45 DFN8-U(ESON8-U) (5) 4 / 5 SSOP4 (4) 53 / 5 (4) Mounted on glass epoxy board. ( mm:based on EIA/JDEC standard, Layers FR4) Mounted on glass epoxy board. ( mm:based on EIA/JDEC standard, 4Layers FR4), internal Cu area: 74. x 74.mm (5) Mounted on glass epoxy board. ( mm: based on EIA/JEDEC standard, Layers FR-4, with Exposed Pad) Mounted on glass epoxy board. ( mm: based on EIA/JEDEC standard, 4Layers FR-4, with Exposed Pad) *For 4Layers: Applying mm inner Cu area and a thermal via hole to a board based on JEDEC standard JESD5-5) POWER DISSIPATION vs. AMBIENT TEMPERATURE Power Dissipation vs. Temperature -Layer SOT-3-5 MSOP8(TSP8) DFN8-U(ESON8-U) SSOP4 SC-88A Ambient Temperature [ºC] Power Dissipation vs. Temperature 4-Layer MSOP8(TSP8) SOT-3-5 SSOP4 DFN8-U(ESON8-U) SC-88A Ambient Temperature [ºC] - 3 -

4 RECOMMENDED OPERATING CONDITIONS Supply oltage Single Supply Dual Supply PARAMETER SYMBOL RATINGS UNIT / to +5.5 ±.9 to ±.75 Operating Ambient Temperature T opr - 4 to +5 C ELECTRICAL CHARACTERISTICS ( + =5, - =, Ta=5 C, unless otherwise noted.) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT DC CHARACTERISTICS Input Offset oltage IO COM = m Input Offset oltage Drift Δ IO /ΔT Ta = -4 C to 5 C µ/ C Input Bias Current I B - - pa Input Offset Current I IO - - pa Open-Loop oltage Gain A R L =kω to db Common-Mode Rejection Ratio CMR ICM = to db Supply oltage Rejection Ratio SR + =.8 to db Common-Mode Input oltage Range ICM CMR 65dB - 4. High-level Output oltage Low-level Output oltage Supply Current (All Amplifiers) OH OL R L =kω to R L =kω to I SOURCE =ma R L =kω to R L =kω to -..5 I SINK =ma -.5. NJU NJU757 I SUPPLY No Signal ma NJU AC CHARACTERISTICS Slew Rate (6) Gain Bandwidth Product SR GBW G =db, R L =kω to.5, C L =pf, IN =3 PP ( to 4) R L =kω to.5, C L =pf, f=khz /µs -. - MHz Phase Margin Φ M R L =kω to.5, C L =pf deg Gain Margin G M R L =kω to.5, C L =pf - - db Equivalent Input Noise oltage NI f=khz n/ Hz Total Harmonic Distortion + Noise THD+N G =6dB, O =4 PP, f=khz -. - % Channel Separation CS (6) Slew rate is defined by the lower value of the rise or fall. f=khz, NJU757/NJU db - 4 -

5 ELECTRICAL CHARACTERISTICS (continued) ( + =.8, - =, Ta=5 C, unless otherwise noted.) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT DC CHARACTERISTICS Input Offset oltage IO COM = m Input Offset oltage Drift Δ IO /ΔT Ta = -4 C to 5 C µ/ C Input Bias Current I B - - pa Input Offset Current I IO - - pa Open-Loop oltage Gain A R L =kω to db Common-Mode Rejection Ratio CMR ICM = to db Supply oltage Rejection Ratio SR + =.8 to db Common-Mode Input oltage Range ICM CMR 65dB -.9 High-level Output oltage Low-level Output oltage Supply Current (All Amplifiers) OH OL R L =kω to R L =kω to I SOURCE =ma R L =kω to R L =kω to -..5 I SINK =ma NJU I SUPPLY No Signal ma NJU NJU AC CHARACTERISTICS Slew Rate (6) Gain Bandwidth Product SR GBW G =db, R L =kω to.9, C L =pf, IN =.5 PP (.3 to.8) R L =kω to.9, C L =pf, f=khz /µs MHz Phase Margin Φ M R L =kω to.9, C L =pf deg Gain Margin G M R L =kω to.9, C L =pf db Equivalent Input Noise oltage NI f=khz n/ Hz Total Harmonic Distortion + Noise THD+N G =6dB, O = PP, f=khz % Channel Separation CS (6) Slew rate is defined by the lower value of the rise or fall. f=khz, NJU757/NJU db - 5 -

6 Input Offset oltage [m] Input Offset oltage [m] Percent of Amplifiers Percent of Amplifiers Percent of Amplifiers Percent of Amplifiers TYPICAL CHARACTERISTICS 35% Input Offset oltage Distribution + =5, ICM =, Ta=5ºC, n=3 35% Input Offset oltage Distribution + =.8, ICM =, Ta=5ºC, n=3 3% 3% 5% 5% % % 5% 5% % % 5% 5% % Input Offset oltage [m] % Input Offset oltage [m] 5% Input Offset oltage Drift Distribution + =5, ICM =, Ta=5ºC, n=3 5% Input Offset oltage Drift Distribution + =.8, ICM =, Ta=5ºC, n=3 4% 4% 3% 3% % % % % % Input Offset oltage Drift [μ/ºc] % Input Offset oltage Drift [μ/ºc] Input Offset oltage vs. Temperature + =5, ICM =, n= Ambient Temperature [ºC] Input Offset oltage vs. Temperature + =.8, ICM =, n= Ambient Temperature [ºC] - 6 -

7 Open-Loop oltage Gain [db] Input Bias Current [A] Input Offset oltage [m] Common-Mode and Supply oltage Rejection Ratio [db] Input Offset oltage [m] Input Offset oltage [m] TYPICAL CHARACTERISTICS.5 Input Offset oltage vs. Supply oltage.5 Input Offset oltage vs. Common-Mode Input oltage + = Ta=5ºC.5. Ta=5ºC Ta=5ºC -.5 Ta=5ºC Supply oltage + [] Common-Mode Input oltage [].5 Input Offset oltage vs. Common-Mode Input oltage + =.8 Common-Mode and Supply oltage Rejection Ratio vs. Temperature 3..5 SR Ta=5ºC Ta=5ºC CMR( + =5) CMR( + =.8) Common-Mode Input oltage [] Ambient Temperature [ºC] 3 Open-Loop oltage Gain vs. Temperature R L =kω to + / n Input Bias Current vs. Temperature CM = + / 9 + =5 n n = Ambient Temperature [ºC] p p p f + =5 + = Ambient Temperature [ºC] - 7 -

8 Maximum Output oltage [] Maximum Output oltage [] High-level Output oltage OH [] Low-level Output oltage OL [m] High-level Output oltage OH [] Low-level Output oltage OL [m] Maximum Output oltage [] Maximum Output oltage [] TYPICAL CHARACTERISTICS 5. Maximum Output oltage vs. Output Current + =5.8 Maximum Output oltage vs. Output Current + =.8 I SOURCE.6 I SOURCE Ta=5ºC Ta=5ºC I SINK Ta=5ºC Output Current [ma] Ta=5ºC Ta=5ºC I SINK Ta=5ºC 5 Output Current [ma] 5 Maximum Output oltage vs. Load Resistance + =5, Gv=open, R L connected to.8 Maximum Output oltage vs. Load Resistance + =.8, Gv=open, R L connected to 4 OH.6.4 OH 3 Ta=5ºC Ta=5ºC OL k k k Load Resistance R L [Ω] Ta=5ºC.4. Ta=5ºC OL. k k k Load Resistance R L [Ω] Maximum Output oltage vs. Load Resistance + / - =±.5, Gv=open, R L connected to Ta=5ºC Ta=5ºC Ta=5ºC -.5 k k k Load Resistance R L [Ω] Maximum Output oltage vs. Load Resistance + / - =±.9, Gv=open, R L connected to Ta=5ºC Ta=5ºC Ta=5ºC -.9 k k k Load Resistance R L [Ω] - 8 -

9 Gain Bandwidth Product GBW [MHz] oltage [/div] oltage Gain [db] Phase [deg] oltage Gain [db] Phase [deg] Supply Current per Amplifier [μa] Supply Current per Amplifier [μa] TYPICAL CHARACTERISTICS Supply Current per Amplifier vs. Supply oltage A =db.4.4 Supply Current per Amplifier vs. Temperature A =db.35.3 Ta=5ºC = Ta=5ºC.5. + = Supply oltage + [] Ambient Temperature [ºC] 6 4dB oltage Gain vs. Frequency + =5, G =4dB, R L =kω to + /, Ta=5ºC 6 4dB oltage Gain vs. Frequency + =.8, G =4dB, R L =kω to + /, Ta=5ºC Gain Gain 4 4 C L =pf C L =pf Phase C L =33pF Phase C L =33pF - C L =pf -6 - C L =pf -6-4 C L =33pF - C L =pf -6 C L =pf -8 k k k M M Frequency [Hz] -4 C L =33pF - C L =pf -6 C L =pf -8 k k k M M Frequency [Hz] 3..8 GBW vs. Temperature f=khz, R L =kω to + /, C L =pf Pulse Response + =5, G =db, R L =kω to + /, Ta=5ºC.4 + = =.8 C L =pf C L =pf C L =33pF Ambient Temperature [ºC] Time [μs/div] - 9 -

10 THD+N [%] Slew Rate [/μs] Equivalent Input Noise oltage [n/ Hz] TYPICAL CHARACTERISTICS.8 Slew Rate vs. Temperature G =db, R L =kω, C L =pf 8 oltage Noise Density vs. Frequency + =5, Ta=5ºC Rise( + =5) 6.. Fall( + =5) Rise( + =.8).8.6 Fall( + =.8) Ambient Temperature [ºC] k k Frequency [Hz] THD+N vs. Output oltage + =5, Gv=6, Ta=5ºC.. f=khz f=5hz f=hz... Output oltage pp [pp] - -

11 TYPICAL TEST CIRCUIT Supply Current (I SUPPLY ) + =+.8, - = + =+5., - = + Input Offset oltage ( IO) + =+.8, - = + =+5., - = R=5Ω,R=5kΩ R IO = R R F [] R R + COM R R F Open-Loop oltage Gain (A ) + =+.8, - = CONDITION :R=5Ω,R=5kΩ,R L=kΩ, IN= IN=+.3, F= F CONDITION :R=5Ω,R=5kΩ,R L=kΩ, IN= IN=+.5, F= F + =+5., - = CONDITION:R=5Ω,R=5kΩ,R L=kΩ, IN= IN=+4.5, F= F CONDITION:R=5Ω,R=5kΩ,R L=kΩ, IN= IN=+.5, F= F R IN IN A log [db] R F - F R R + R R R L IN F - -

12 Common-Mode Rejection Ratio (CMR) Common-Mode Input oltage Range ( ICM) + =+.8, - = CONDITION :R=5Ω,R=5kΩ, IN= IN=+.9, F= F CONDITION :R=5Ω,R=5kΩ, IN= IN=, F= F + =+5., - = CONDITION :R=5Ω,R=5kΩ, IN= IN=+4., F= F CONDITION :R=5Ω,R=5kΩ, IN= IN=, F= F R CMR log IN IN [db] R F - F ICM = IN to IN R R + ICM R R F Supply oltage Rejection Ratio (SR) CONDITION : + = + =+.8, - =,R=5Ω,R=5kΩ, F= F CONDITION : + = + =+5.5, - =,R=5Ω,R=5kΩ, F= F + R SR log [db] R F - F R + R R R F - -

13 High-level Output oltage ( OH, R L=kΩ to / + pulse measurement + =+.8, - = + OH:R L=kΩ, IN + =+., IN - =+.9 OL:R L=kΩ, IN + =+.9, IN - =+. + =+5., - = IN - IN + R L OH / OL OH:R L=kΩ, + IN =+.8, - IN =+.5 OL:R L=kΩ, + IN =+.5, - IN =+.8 High-level Output oltage ( OH, L=kΩ to pulse measurement + =+.8, - = + OH:R L=kΩ, IN + =+., IN - =+.9 OL:R L=kΩ, + IN =+.9, - IN =+. + =+.8, - = IN - IN + R L OH / OL OH:R L=kΩ, + IN =+.8, - IN =+.5 OL:R L=kΩ, + IN =+.5, - IN =+.8 High-level Output oltage ( OH, Isink=Isource=mA, Isink=Isource=mA pulse measurement + =+.8, - = OH:I SOURCE=mA, IN + =+., IN - =+.9 OL:I SINK=mA, IN + =+.9, IN - = =+.8, - = OH:I SOURCE=mA, IN + =+.8, IN - =+.5 OL:I SINK=mA, IN + =+.5, IN - =+.8 IN - IN + I SOURCE OH / OL + IN - IN + OH / OL I SINK - 3 -

14 APPLICATION NOTE Single and Dual Supply oltage Operation The works with both single supply and dual supply when the voltage supplied is between + and. These amplifiers operate from single +.8 to +5.5 supply and dual ±.9 to ±.75 supply. in Current Limit ma R LIMIT + out Common-Mode Input oltage Range When the supply voltage does not meet the condition of electrical characteristics, the range of common-mode input voltage is as follows: ICM (typ.) = to (Ta = 5 C) Difference of ICM when Temperature change, refer to typical characteristic graph. During designing, consider variations in characteristics for use with allowance. Maximum Output oltage Range When the supply voltage does not meet the condition of electrical characteristics, the range of the typ. value of the maximum output voltage is as follows: OM (typ.) = - +5m to + -5m (R L=kΩ to + /, Ta=5 C) During designing, consider variations in characteristics and temperature characteristics for use with allowance. In addition, also note that the output voltage range becomes narrow as shown in typical characteristics graph when an output current increases. Input oltage Exceeding the Supply oltage Inputs of the are protected by ESD diodes (shown in Figure) that will conduct if the input voltages exceed the power supplies by more than approximately 3m. Momentary voltages greater than 3m beyond the power supply, inputs can be tolerated if the current is limited to ma. Figure is easily accomplished with an input resistor. If the input voltage exceeds the supply voltage, the input current must be limited ma or less by using a restriction resistance (R LIMIT ) as shown in figure. Figure. Input Current Protection for oltages exceeding the Supply oltage. Capacitive load The can use at unity gain follower, but the unity gain follower is the most sensitive configuration to capacitive loading. The combination of capacitive load placed directly on the output of an amplifier along with the output impedance of the amplifier creates a phase lag which in turn reduces the phase margin of the amplifier. If phase margin is significantly reduced, the response will cause overshoot and ringing in the step response. The is unity gain stable for capacitive loads of pf. To drive heavier capacitive loads, an isolation resistor, R ISO as shown Figure3, should be used. R ISO improves the feedback loop s phase margin by making the output load resistive at higher frequencies. The larger the value of R ISO, the more stable the output voltage will be. However, larger values of R ISO result in reduced output swing, reduced output current drive and reduced frequency bandwidth. in + - R ISO C L out - + Figure3. Isolating capacitive load +INPUT -INPUT OUTPUT - Figure. Simplified Schematic - 4 -

15 .5±. (.45).±..4.9± PACKAGE OUTLINE /SOLDER FOOT PRINT SOT-3-5 Unit: mm.7.9± MAX.± ±..MIN.9±. ~ MAX.95± ±.. SC-88A ±.7.±..3±..45±..45± ±

16 .±.5.MAX.55±..8±. 4.±. PACKAGE OUTLINE /SOLDER FOOT PRINT MSOP8(TSP8) Unit: mm b.9±. ~ 8 5 l c.475± PKG b l c e e TSP ±.5.5 M DFN8-U(ESON8-U) Package Outline - 6 -

17 .±..5±..5±. 4.4±. 6.4±.3 PACKAGE OUTLINE /SOLDER FOOT PRINT SSOP4 Unit: mm ~ 4 8 b l MAX c PKG b l c e e SSOP ±.. M - 7 -

18 B PACKING SPECIFICATION NJRC delivers ICs in 4 methods, plastic tube container, two kinds of Taping, tray and vinyl bag packing.except adhesive tape treated anti electrostatic and contain carbon are using as the ESD ( Electrostatic Discharge Damage ) protection. SOT-3-5 Emboss Taping (TE) Unit : mm Symbol SOT-3-5 Remark A 3.3±. Bottom size B 3.±. Bottom size B A F E W P P Pull out direction φd T D.55 D.5 E.75±. F 3.5±.5 P 4.±. W P 4.±. P.±.5 T.5±.5 T.57 P A φd T W 8.±.3 W 5.5 Thickness.MAX W E Symbol SOT-3-5 C A Ø8± B Ø 6± C Ø 3±. D Ø ±.8 E ±.5 W 9±.5 W.±. D Contents 3,pcs W Seal area by a cover tape Empty Occupancy Empty cover tape 6mm and more mm and more reel and more Pull out direction Label TE Put in the outer box Label - 8 -

19 B A B W PACKING SPECIFICATION SC-88A Emboss Taping (TE) Unit : mm Symbol SC-88A Remark A.3±. Bottom size B.5±. Bottom size D.55±.5 D.5±.5 E.75±. F 3.5±.5 P 4.±. P 4.±. P.±.5 T.5±.5 T.5 W 8.±. W 5.5 Thickness.MAX W P P P Pull out direction ØD T F E Pull out direction A ØD W T E Symbol SC-8AB SC-88A A Ø8± B Ø 6± C Ø 3±. D Ø ±.8 E ±.5 W 9±.5 W.±. Contents 3, pcs Unit : mm D C W Seal area by a cover tape Empty Occupancy Empty cover tape 6mm and more mm and more reel and more Pull out direction Label TE Put in the outer box Label - 9 -

20 B A B W PACKING SPECIFICATION MSOP8(TSP8) Emboss Taping (TE) Unit : mm Symbol MSOP8 (TSP8/) * *MEETJEDEC MO-87-DA Remark / THIN TYPE A 4.4 Bottom size B 3. Bottom size D.5+./- D.5+./- E.75±. F 5.5±.5 P 4.±. P 8.±. P.±.5 T.3±.5 T.45 W.±.3 W 9.5 Thickness.MAX W P P P Pull out direction φd A φd F E W T T E Symbol MSOP8 (TSP8/) * *MEETJEDEC MO-87-DA / THIN TYPE A Ø54± B ر C Ø3±. D ر.8 E ±.5 W 3.5±.5 W ±. Contents, pcs D C W Seal area by a cover tape Empty Occupancy Empty cover tape 6mm and more mm and more reel and more Label Pull out direction TE Put in the outer box Label - -

21 B W B A PACKING SPECIFICATION DFN8-U (ESON8-U) Emboss Taping (TE3) Unit : mm Symbol DFN8-U (ESON8-U) Remark A.5±.5 Bottom size B.5±.5 Bottom size P P Pull out direction φd T D.5+./- D.5±. E.75±. F 3.5 ±.5 F E P 4. ±. W P 4. ±. P. ±.5 T.5±.5 T.75 W 8. ±. W 5.5 Thickness.MAX P A φd W T Symbol DFN8-U (ESON8-U) A φ8 +/-.5 B φ 6 +/- C φ3.±. D φ.±.8 E.±.5 W /- W. D E C Contents 3,pcs W Seal area by a cover tape Empty Occupancy Empty cover tape 6mm and more mm and more reel and more Pull out direction Label TE3 Put in the outer box Label - -

22 B A W B W F E PACKING SPECIFICATION SSOP4 Emboss Taping (TE) Unit : mm Symbol SSOP4 Remark A 6.95 Bottom size B 5.4 Bottom size D.55±.5 D.55±. E.75±. F 5.5±.5 P 4.±. P 8.±. P.±.5 T.3±.5 T.9 W.±.3 W 9.5 Thickness.MAX P A P P Pull out direction φd T φd T Pull out direction W Symbol SSOP4 E A Ø54± B ر C Ø3±. D ر.8 E ±.5 W 3.5±.5 W ±. s Contents, pcs D C W Seal area by a cover tape Empty Occupancy Empty cover tape 6mm and more mm and more reel and more Pull out direction TE Label Put in the outer box Label - -

23 RECOMMENDED MOUNTING METHOD *Recommended reflow soldering procedure f 6 3 e d 8 5 Room Temp. a b c g a:temperature ramping rate : to 4 /s b:pre-heating temperature time : 5 to 8 : 6 to s c:temperature ramp rate : to 4 /s d: or higher time : Shorter than 6s e:3 or higher time : Shorter than 4s f:peak temperature : Lower than 6 g:temperature ramping rate : to 6 /s *The temperature indicates at the surface of mold package. REISION HISTORY Date Revision Changes.Aug.6 er.6 Data sheet format revision.jun.7 er.7 Changed ψjt data for thermal characteristics table. 5 OCT 7 Corrected Test Condition of Electrical Characteristics - 3 -

24 [ CAUTION ]. New JRC strives to produce reliable and high quality semiconductors. New JRC's semiconductors are intended for specific applications and require proper maintenance and handling. To enhance the performance and service of New JRC's semiconductors, the devices, machinery or equipment into which they are integrated should undergo preventative maintenance and inspection at regularly scheduled intervals. Failure to properly maintain equipment and machinery incorporating these products can result in catastrophic system failures. The specifications on this datasheet are only given for information without any guarantee as regards either mistakes or omissions. The application circuits in this datasheet are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. All other trademarks mentioned herein are property of their respective companies. 3. To ensure the highest levels of reliability, New JRC products must always be properly handled. The introduction of external contaminants (e.g. dust, oil or cosmetics) can result in failures of semiconductor products. 4. New JRC offers a variety of semiconductor products intended for particular applications. It is important that you select the proper component for your intended application. You may contact New JRC's Sale's Office if you are uncertain about the products listed in this catalog. 5. Special care is required in designing devices, machinery or equipment which demand high levels of reliability. This is particularly important when designing critical components or systems whose failure can foreseeably result in situations that could adversely affect health or safety. In designing such critical devices, equipment or machinery, careful consideration should be given to amongst other things, their safety design, fail-safe design, back-up and redundancy systems, and diffusion design. 6. The products listed in the catalog may not be appropriate for use in certain equipment where reliability is critical or where the products may be subjected to extreme conditions. You should consult our sales office before using the products in any of the following types of equipment. Aerospace Equipment Equipment Used in the Deep sea Power Generator Control Equipment (Nuclear, Steam, Hydraulic) Life Maintenance Medical Equipment Fire Alarm/Intruder Detector ehicle Control Equipment (airplane, railroad, ship, etc.) arious Safety devices 7. New JRC's products have been designed and tested to function within controlled environmental conditions. Do not use products under conditions that deviate from methods or applications specified in this catalog. Failure to employ New JRC products in the proper applications can lead to deterioration, destruction or failure of the products. New JRC shall not be responsible for any bodily injury, fires or accident, property damage or any consequential damages resulting from misuse or misapplication of its products. Products are sold without warranty of any kind, either express or implied, including but not limited to any implied warranty of merchantability or fitness for a particular purpose. 8. Warning for handling Gallium and Arsenic(GaAs) Products (Applying to GaAs MMIC, Photo Reflector). This Products uses Gallium(Ga) and Arsenic(As) which are specified as poisonous chemicals by law. For the prevention of a hazard, do not burn, destroy, or process chemically to make them as gas or power. When the product is disposed, please follow the related regulation and do not mix this with general industrial waste or household waste. 9. The product specifications and descriptions listed in this catalog are subject to change at any time, without notice