Heavy Ion Irradiation of the XAA1.2 ASIC Chip for Space Application

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Cory Dalton
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1 Heavy Ion Irradiation of the XAA1.2 ASIC Chip for Space Application E. Del Monte 1,2, L. Pacciani 1, G. Porrovecchio 1, P. Soffitta 1, E. Costa 1, G. Di Persio 1, M. Feroci 1, M. Mastropietro 3, E. Morelli 4, M. Rapisarda 5, A. Rubini 1, D. Bisello 6, A. Candelori 6, A. Kaminski 6, J. Wyss 7 1 IASF-CNR Roma, Via Fosso del Cavaliere 100, I Roma, Italy 2 Dipartimento di Fisica,, Via della Ricerca Scientifica 1, I Roma, Italy 3 IMIP CNR, Via Salaria km , I Monterotondo Scalo (RM) c.p. 10, Italy 4 IASF-CNR Bologna, Via P. Gobetti 101, I Bologna, Italy 5 ENEA C.R. Frascati, Via Enrico Fermi 45, I Frascati (RM), Italy 6 Dipartimento di Fisica, Università di Padova, INFN Sezione di Padova, Via Marzolo 8, I Padova, Italy 7 DIMSAT, Università di Cassino, Via Di Biasio 43, I Cassino (FR), Italy

2 Summary - overview of the XAA1.2 chip; - experimental set-up at SIRAD facility; - latch-up measurements; - SEU measurements; - Total Dose Effects measurements; - conclusions

3 XAA1.2 chip: main features - technology: CMOS ASIC (0.8 µm epitaxial layer); 8 mm - manufacturer: Ideas ASA; - dimensions: 6 mm 8 mm; - thickness: 600 µm; 6 mm ( 10 µm active layer); - dead time: 5 µs; - electronic noise: 880 e - rms ( 7.5 kev FWHM); - power supply: +2.0 V and 14 ma; -2.0 V and 24 ma ( 0.5 mw/ch.); - input channels: 128 with internal trigger; - purpose: selected as the front-end electronic chip of the SuperAGILE experiment on board the ASI AGILE satellite mission for X and gamma ray astrophysics.

4 XAA1.2: circuit overview The analog channel is composed of a preamplifier, a CR-RC shaper and a peak store unit, containing a peak stretcher. The chip digital section can be programmed using a 646 bit long register, built inside and serially loaded. The access to the bus is inhibited about 10 ns after a signal acquisition and a multiplicity signal (MGO) accounts for contemporary bus accesses. The chip performances depend on twelve parameters: one threshold voltage, nine bias currents and two bias voltages.

5 Experimental set-up: SIRAD facility The XAA1.2 chip heavy ion irradiation has been performed at the SIRAD facility of the Laboratori Nazionali INFN di Legnaro (see left picture). Single Event Effect (latch-up and SEU) and Total Dose Effect have been studied irradiating three chips, each one on its PCB. Inside the SIRAD experimental chamber (see right picture) two PCB can be stored. They are covered with a 1 mm aluminum layer with a window above the chip to prevent the ions from reaching the other circuit elements.

Experimental set-up: acquisition system -custom acquisition board XA- DAQ (manufactured by Ideas ASA); -LabView software under Windows98 operating system with parallel port interface; -circuit power

6 Experimental set-up: acquisition system -custom acquisition board XA- DAQ (manufactured by Ideas ASA); -LabView software under Windows98 operating system with parallel port interface; -circuit power supply with voltage and current monitor (3 Hz frequency); -digital section programmation and verification; -bias DAC generation and bias measurements (current and voltage); -I/V and A/D (13 bit ADC) conversion of the analogue signals; -test pulse generation;

7 Experimental set-up: ion list Ion specie LET [MeV cm 2 mg -1 ] range [µm] fluence [cm -2 ] dose [krad] chip 16 O (1.1±0.1) O (5.2±0.3) Si (5.1±0.3) Si (2.3±0.2) S (8.6±0.3) S (2.0±0.1) Ti (3.0±0.2) Ti (3.2±0.4) Ti (3.9±0.3) Ni (2.1±0.3) Ni (2.1±0.2) Ni (2.1±0.4) Br (5.1±0.5) Ag (1.3±0.1) I (2.3±0.2) I (8.0±0.7) Au (4.0±0.7)

8 Latch-up: measurement method The latch-up is studied monitoring with a 3 Hz sampling frequency both power supply currents (Iss 24 ma and Idd 14 ma in steady conditions). Two independent thresholds are selected and when one of the two currents exceeds its threshold a latch-up event is recorded and the power supply is switched off.

9 Latch-up: results Weibull function fit parameters: chip : σ =(1.7±0.1) 10-3 cm 2, LET thr =8.5±3.6 MeV cm 2 mg -1, W=(3.9±0.3) 10-2 and S=5.4±2.7; chip : σ =(2.2±0.2) 10-3 cm 2, LET thr =4.2±1.7 MeV cm 2 mg -1, W=(4.0±0.2) 10-2 and S=9.5±1.5;

10 SEU: measurement method Register In SEU Register Out The SEU is studied monitoring every 2 s the configuration bit stream stored in the memory registers (Register Out) and comparing its value with the input one (Register In). The SEU events are recorded in the approximation that an interacting ion can change the state of only a single bit a time.

11 SEU: results From a linear extrapolation of the chip results (showing a SEU at the lowest LET value) the estimated SEU threshold is LET thr =3.9±0.3 MeV cm 2 mg -1.

12 Total Dose: results The XAA1.2 linearity does not change at 3 krad, the maximum expected dose in SuperAGILE experiment. Some significant linearity variations can be seen at 173 krad and the chip is not linear at 675 krad. The XAA1.2 power consumption shows variations as a function of the dose in the active layer. Considering a 3 krad dose the power consumption does not vary in the chip and has variations of -2 % in the and +2 % in the

13 Conclusions - the XAA1.2 chip can be safely used as a front-end electronic chip for satellite experiments and for low-dose High Energy Physics experiments; - the latch-up mean threshold is LET thr =5.0±1.5 MeV cm2 mg-1 and the latch-up mean limiting cross section is σ =(1.8±0.1) 10-3 cm 2 ; - the SEU threshold is LET thr =3.9±0.3 MeV cm 2 mg -1 ; - the total dose increases the power consumption (above 100 krad) and affects the chip linearity (above 100 krad);

The SIRAD irradiation facility at the INFN - Legnaro National Laboratory

The SIRAD irradiation facility at the INFN - Legnaro National Laboratory I. Introduction 2 The INFN - Legnaro National Laboratory (LNL) SIRAD beamline http://www.lnl.infn.it 3 What is SIRAD? SIRAD is the