celduc r e l a i s Proud to serve you MOSFET BASED DC SOLID STATE RELAY SCM VDC 600VDC 40ADC Page 1/5 GB
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1 Page 1/5 GB MOSFET BASED DC SOLID STATE RELAY SCM6 Latest MOSFET technology generation. Ultra low on-state resistance. New innovative isolated driver ensuring fast power transistor turn on and off therefore low power transient. Ultra low output leakage current Low control current consumption Triggered control input to avoid linear control risks Low conducted and radiated disturbances Control voltage range Max. output peak voltage Nom. load current with heatsink VDC 6VDC ADC Load voltage range Load current range Control input voltage range In & case / Out Insulation Connections Dimensions (WxHxD) Weight Depends on protection clamping voltage to A (with heatsink) VDC 4kV M3 round tabs M5 round tabs 44.5 x 58.2 x 27 (mm) g Fig. 1 HIGH SIDE WIRING DIAGRAM (Load connected to - ) Fig. 2 LOW SIDE WIRING DIAGRAM (Load connected to + ) sheet for selective the right sheet for selective the right (Red paths as short as possible) (Red paths as short as possible) Fig. 3 INTERNAL DIAGRAM Proud to serve you Data given at Tambient= C and subject to modification without previous notice
2 Page 2/5 GB CONTROL INPUT CHARACTERISTICS INPUT CIRCUIT Control voltage range Uc VDC Current consumption Ic 25 42mADC for control voltage range See fig. 5 Typical turn on voltage Ucontyp 4.3V Min. releasing voltage Ucoffmin 1VDC Typical releasing voltage Ucofftyp 3.5V Max. input voltage Ucmax 32VDC Max. reverse voltage -Ucmax 32VDC Max. reverse leakage current -Icmax µa Input impedance Re Current limitation See fig. 5 POWER OUTPUT CHARACTERISTICS Mains voltage range Ue Depends on protection clamping voltage (D1) Non-repetitive peak voltage Utp 6V Overvoltage protection D1 Not integrated A voltage clamping mean must be connected across the terminals 1 & 2 (see fig 1 & 2) Reverse voltage (internal diode) -Ut 1,2V Max. repetitive avalanche current Iep A Max. single pulse avalanche energy Eep 18mJ Max. repetitive pulse avalanche energy sheet for selective Pulse width limited by Eep POWER CIRCUIT Maximum nominal currents Non-repetitive peak overload current Ie Resistive Motor See fig. 7 Values with A Please consult us heatsink Iepeak 1A See fig. 8 Min. load current Iemin ma Max. leakage current Max. on-state resistance Typ. output capacitance Cout 2.2nF Junction/case thermal resistance per power element Built-in heatsink thermal resistance vertically mounted Rthjc.4K/W Total = 1 power elements Rthra Tra=6 C Heatsink thermal time constant Tthra Tra=6 C Control inputs/power outputs insulation voltage Uimp Inputs/case insulation voltage Uimp 4kV Outputs/case insulation voltage Uimp 4kV Isolation resistance Rio 1G Isolation capacitance Cio <8pF Maximum junction temperature Tjmax 15 C Storage ambient temperature Tstg -->+ C Operating ambient temperature Tamb -->+9 C See fig. 7 Max. case temperature Tc C 4kV
3 Page 3/5 GB TIME CHARACTERISTICS Fig. 4 TIME DIAGRAMS TIME CHARACT. Turn on time ton µs (1.2µs typical) Turn on delay tdon 6µs (5µs typical) Turn off time toff µs (1µs typical) Turn off delay tdoff µs (6µs typical) Max. On-Off frequency F(on-off) 7Hz GENERAL INFORMATION CONNEC- TIONS Connections Power Control Screwdriver advised Philips NR2 Philips NR1 Min and max tightening torque 1.8 N.m.8 N.m Insulated crimp terminals (round tabs, eyelet type) M5 M3 Display Green LED (indicates relay has switched ON) MISC. Housing Mounting Noise level UL94V 2 screws (M4x12mm) No audible noise See mounting sheet Weight g STANDARDS GENERAL Standards Protection level Protection against direct touch CE marking UL, culus IEC IP None Yes Yes TYPE OF TEST STANDARD LEVEL EFFECT E.M.C. IMMUNITY E.S.D. (Electrostatic discharges) EN6-4-2 Pending? Radiated electromagnetic fields EN6-4-3 Pending? Fast transients bursts EN kV coupling by clamp on the input side and direct for power side No effect Electric chocks EN kV direct coupling on the input side (pending for power side)? Voltage drop EN E.M.C. EMISSION Radiated and conducted disturbances NFEN5511 Pending
4 Page 4/5 GB CHARACTERISTIC CURVES Fig. 5 INPUT CHARACTERISTIC Fig. 6 ON RESISTANCE VS TEMPERATURE Ic (madc) 45 C Uc (VDC) RDSon (mohms) Junction Temperature ( C) Fig. 7 POWER DISSIPATED AND LOAD CURRENT LIMIT VS TEMPERATURE Permanent current Ie (ARMS) K/W 1.2K/W Please refere to the installation notice for precautions about mounting the device on a heatsink. 1.1K/W.9K/W.75K/W.55K/W.3K/W.2K/W.1K/W Power dissipated (W) K/W 4K/W 2.4K/W 2.2K/W 2.1K/W 1.95K/W 1.5K/W Ambient temperature ( C) 8K/W = No Heatsink 4K/W = No reference 2.4K/W = WF K/W = WF K/W = WF15 2.1K/W = WF2 1.95K/W = WF K/W = WF K/W = WF K/W = WF12 1.1K/W = WF131.9K/W = WF9.9K/W = WF115.7K/W = WF7.55K/W = WF5.3K/W = WF31.2K/W = WF.1K/W = No reference 3.5 Fig. 8 CURRENT OVERLOAD CHARACTERISTIC Ie 15 (A) Non repetitive peak overload switching current vs overvoltage protection clamping voltage (D1) Single pulse F(on-off)=5Hz F(on-off)=Hz F(on-off)=7Hz 5 6 Utpk (V) Ie 1 (A) Non repetitive on-state (no switching) max. peak current vs overload pulse duration.1 1 Pulse duration (ms)
5 Page 5/5 GB DIMENSIONS AND ACCESSORIES Fig DIMENSIONS ±,5 Ø M TOLERANCES: ± M3 Fig. ACCESSORIES PROTECTIVE COVER 1K Rue Ampère B.P SORBIERS - FRANCE -relais@.com Fax +33 () Service Commercial France Tél. : +33 () Sales Dept.For Europe Tel. : +33 () Sales Dept. Asia : Tél. +33 ()
celduc r e l a i s Proud to serve you celduc MOSFET BASED DC SOLID STATE RELAY SCM VDC 200VDC 100ADC Page 1/5 GB
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