LTCC-Breitband-Balun. für einen Gegentaktverstärker
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1 IMST LTCC-Breitband-Balun für einen Gegentaktverstärker Dr. Jürgen Kassner, RF-Modules Reinhard Kulke, RF-Modules Dr. Andreas Lauer, Field Simulation and Modelling Dr. Dietmar Köther, Measurement Techniques Customer: Thomas Molière, Siemens AG j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 1
2 Outline Introduction Concepts of Balun structures Balun structure on LTCC Push-pull amplifier with Baluns on LTCC Conclusion j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 2
3 Introduction GSM push-pull power amplifier 0 0 Input balun Output balun Double HBT Working frequencies: 900 and 1800 MHz Impedance transformation output: 2 4 bal. to 32 unbal. j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 3
4 Concepts of Balun structures Lumped elements (SMD components): small space requirement ideal: very good calculable real: parasitic effects small bandwidth Distributed elements: reproduction of lumped elements with line elements missing models, synthesis with field simulation complex large parasitic effects small bandwidth j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 4
5 Concepts of Balun structures Line elements: synthesis based on coupled lines is simple (Series IV Libra) larger space requirement ( /4 approx. 25 mm@1.4 GHz on MSL) field simulation necessary large bandwidth possible Fits best the needed bandwidth specifications Multilayer substrate required for coupled lines Choice: LTCC j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 5
6 Guanella transformer Simulation environment (HP Series IV Libra ) j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 6
7 Balun structure on LTCC Bond wires Double HBT Unbalanced Port Balanced Port Simulation environment (IMST EMPIRE) j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 7
8 LTCC layer settings Tapes: DuPont 951 mixed metal thickfilm gold thickfilm silver fired thickness: 36 um (1) 36 um (2) 200 um (3) unfired thickness: 2 mils (1) 2 mils (2) 10 mils(3) thickfilm silver thickfilm silver thickfilm silver 200 um (4) 200 um (5) 36 um (6) 10 mils(4) 10 mils(5) 2 mils (6) typical vias j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 8
9 Simulation results s11 s21 s31 Scattering Parameters / db j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 9
10 Measurement environment /4-transformer at input: Zl=50 to 32 HBT output imitated by SMD resistors Port 3 Port 1 Port 2 Onwafer prober connector j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 10
11 Measurement results Scattering Parameters / db s11 s31 s21 Problem: SMD resistors include a very high imaginary part Frequency / GHz j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 11
12 Comparison: Balun results Scattering Parameters / db Simulation s11 Measurement s31 s21 Comparison of simulation and measurement: measured SMD resistors included in Libra simulation as s2p-files j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 12
13 Back to back-setup Two Balun structures back to back to measure the loss in transmission j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 13
14 Back to back: results Comparison of simulation and measurement: simulation without loss by EMPIRE Scattering Parameters / db s11 s21 Measurement Simulation j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 14
15 Back to back: results measured loss in transmission of the back to back-setup Scattering Parameters / db s21 j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 15
16 Amplifier on LTCC DC-base Onwafer prober connector Port 1 Port 2 DC-collector Matching line at input Input balun Double HBT Output balun /4-transformator at output: Zl=32 to 50 j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 16
17 Chip connection Collector HBT-Chip from infineon Base j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 17
18 Measurement: small signal Trafo-Balun-HBT(AP 7mA/3,5V DUT; Ic=0,50A)-Balun-Trafo: Pin < -5dbm 20 s21 10 Scattering Parameters / db s22 s11 s Frequency / GHz j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 18
19 Simulation: small signal Simulation with s2p-file of the HBTs: Resonance below the used frequency band similar to the measurement Scattering Parameters / db s12 s11 s21 s22 j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 19
20 Amplifier with Diplexer Port 3 DC-Base Port 1 Port 2 DC-Collector Matching line at input Input balun HBT Chip Output balun Diplexer j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 20
21 Amplifier with Diplexer Trafo-Balun-HBT(AP 7mA/3,5V DUT; Ic=0,60)-Balun-Diplexer: Pin < -5dbm s31 s21 Scattering Parameters / db s33 s Frequency / GHz j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 21
22 Conclusion A broadband balun structure on LTCC has been presented LTCC offers good reproducibility and flexibility for such a structure (various layer thickness) Push-pull amplifier with baluns on LTCC successfully designed, fabricated and tested Space reduction by using inner layers for baluns is possible j.kassner, dokumente/imaps2002.ppt, 08/02 RF-Modules 22
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Typical Applications The HMC44ST8 / HMC44ST8E is ideal for applications requiring a high dynamic range amplifi er: GSM, GPRS & EDGE CDMA & W-CDMA CATV/Cable Modem Fixed Wireless & WLL Features Output IP3:
Parameter Min Typ Max Units Frequency Range
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HMC454ST89 / 454ST89E
HMC44ST8 / 44ST8E Typical Applications The HMC44ST8 / HMC44ST8E is ideal for applications requiring a high dynamic range amplifi er: GSM, GPRS & EDGE CDMA & W-CDMA CATV/Cable Modem Fixed Wireless & WLL
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Features. = +25 C, Vcc = +3V
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