RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON and gate charge for most of the synchronous buck converter applications. The meet the RoHS and Green Product requirement with full function reliability approved. SOP-8 B L D FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available A C M N J K MARKING H G F E REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.79 6.20 H 0.33 0.51 B 4.70 5.11 J 0.375 REF. C 3.80 4.00 K 45 REF. D 0 8 L 1.3 1.752 E 0.40 1.27 M 0 0.25 F 0.10 0.25 N 0.25 REF. G 1.27 TYP. PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25 C unless otherwise specified) Parameter Symbol N-CH Rating P-CH Unit Drain-Source Voltage V DS 30-30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current 1 @V GS=10V T A =25 C 6.9-6.3 A T A =70 C I D 5.5-5 A Pulsed Drain Current 3 I DM 27-25 A Total Power Dissipation P D 1.5 W Operating Junction and Storage Temperature Range T J, T STG -55~150 C Thermal Resistance Rating Thermal Resistance from Junction to Ambient 1 R θja 85 Thermal Resistance from Junction to Ambient 2 R θja 135 C/ W Thermal Resistance from Junction to Case 1 R θjc 40 15-Aug-2017 Rev. B Page 1 of 7
N-Ch ELECTRICAL CHARACTERISTICS (T J=25 C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Drain-Source Breakdown Voltage BV DSS 30 - - V V GS=0, I D=250µA Gate Threshold Voltage V GS(th) 1-3 V V DS=V GS, I D=250µA Forward Transfer conductance gfs - 6 - S V DS=5V, I D=6A Gate-Source Leakage Current I GSS - - ±100 na V DS=0, V GS= ±20V Drain-Source Leakage Current I DSS - - 1 µa V DS=24V, V GS=0,T J=25 C Drain-Source Leakage Current I DSS - - 5 µa V DS=24V, V GS=0, T J=55 C Drain-Source On-Resistance 4 R DS(ON) - - 25 mω V GS=10V, I D=6A - - 30 V GS=4.5V, I D=4A Total Gate Charge Q g - 6 - Gate-Source Charge Q gs - 2.5 - Gate-Drain Charge Q gd - 2.1 - Turn-On Delay Time T d(on) - 2.4 - Rise Time T r - 7.8 - Turn-Off Delay Time T d(off) - 22 - Fall Time T f - 4 - Input Capacitance C iss - 572 - Output Capacitance C oss - 80 - Reverse Transfer Capacitance C rss - 65 - Source-Drain Diode nc ns pf V DS=15V V GS=4.5V I D=6A V DS=15V V GS=10V R G=3.3Ω I D=6A V DS=15V V GS=0 f=1mhz Continuous Source Current 1 I S - - 6.9 A Pulsed Source Current 3 I SM - - 27 A Forward On Voltage 4 V SD - - 1.2 V I S=6A, V GS=0V, T J=25 C 15-Aug-2017 Rev. B Page 2 of 7
P-Ch ELECTRICAL CHARACTERISTICS (T J=25 C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Drain-Source Breakdown Voltage BV DSS -30 - - V V GS=0, I D= -250µA Gate Threshold Voltage V GS(th) -1 - -3 V V DS=V GS, I D= -250µA Forward Transfer conductance gfs - 13 - S V DS= -5V, I D= -6A Gate-Source Leakage Current I GSS - - ±100 na V DS=0, V GS= ±20V Gate-Source Leakage Current I DSS - - -1 µa V DS= -24V, V GS=0,T J=25 C Gate-Source Leakage Current I DSS - - -5 µa V DS= -24V, V GS=0,T J=55 C Drain-Source On-Resistance 4 R DS(ON) Total Gate Charge Q g - 9.8 - Gate-Source Charge Q gs - 2.2 - Gate-Drain Charge Q gd - 3.4 - Turn-On Delay Time T d(on) - 16.4 - Rise Time T r - 20.2 - Turn-Off Delay Time T d(off) - 55 - Fall Time T f - 10 - Input Capacitance C iss - 1050 - Output Capacitance C oss - 148 - Reverse Transfer Capacitance C rss - 115 - - - 36 V GS= -10V, I D= -6A mω - - 45 V GS= -4.5V, I D= -4A Source-Drain Diode Continuous Source Current 1 I S - - -6.3 A Pulsed Source Current 3 I SM - - -25 A nc ns pf V DS= -20V V GS= -4.5V I D= -6A V DS= -24V V GS= -10V R G=3.3Ω I D= -1A V DS= -15V V GS=0 f=1mhz Forward On Voltage 4 V SD - - -1.2 V I S= -6A, V GS=0V, T J=25 C Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. When mounted on Min. copper pad. 3. Pluse width limited by maximum junction temperature, pulse width 300us, duty cycle 2% 4. The data tested by pulsed, pulse width 300us, duty cycle 2% 15-Aug-2017 Rev. B Page 3 of 7
N-Ch TYPICAL CHARACTERISTIC CURVES 15-Aug-2017 Rev. B Page 4 of 7
N-Ch TYPICAL CHARACTERISTIC CURVES 15-Aug-2017 Rev. B Page 5 of 7
P-Ch TYPICAL CHARACTERISTIC CURVES 15-Aug-2017 Rev. B Page 6 of 7
P-Ch TYPICAL CHARACTERISTIC CURVES 15-Aug-2017 Rev. B Page 7 of 7