Single P-Channel MOSFET DESCRIPTION SMC5455 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanche and commutation mode.these devices are well suited for high efficiency fast switching applications. PART NUMBER INFORMATION SMC 5455 H - TR G a b c d e a : Company name. b : Product Serial number. c : Package code H:TO-252 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant FEATURES VDS = -4V, ID = -42A RDS(ON)=2.5mΩ(Typ.)@VGS=-V RDS(ON)=6mΩ(Typ.)@VGS=-4.5V % UIS and Rg tested High power and current handling capability APPLICATIONS LED Application Power Management G S TO-252 D G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage -4 V VGSS Gate-Source Voltage ±2 V ID Continuous Drain Current TC=25 C -42 A TC= C -26.5 A IDM Pulsed Drain Current A -68 A ID Continuous Drain Current TA=25 C -5 A TA=7 C -2 A PD Power Dissipation B TA=25 C 6.3 W TA=7 C 4 W IAS Avalanche Current A -35 A EAS Single Pulse Avalanche energy L=.mH AF 6 mj PD Power Dissipation C TC=25 C 48 W TC= C 9 W TJ Operation Junction Temperature -55/5 C TSTG Storage Temperature Range -55/5 C THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t s 25 Thermal Resistance Junction to Ambient BD 5 C/W Steady-State RθJC Thermal Resistance Junction to Case 2.6 Rev.A
ELECTRICAL CHARACTERISTICS(TA = 25 C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=V, ID=-25μA -4 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-25μA - -.6-2.5 V IGSS Gate Leakage Current VDS=V, VGS=±2V ± na IDSS Zero Gate Voltage Drain Current VDS=-4V, VGS=V, TJ=25 C - VDS=-32V, VGS=V, TJ=75 C - μa Drain-source On-Resistance E VGS=-V, ID=-5A 2.5 5 VGS=-4.5V, ID=-A 6 2 mω Gfs Forward Transconductance VDS=-V, ID=-4A 32 S RDS(ON) Diode Characteristics VSD Diode Forward Voltage E IS=-A, VGS=V -.7 - V IS Continuous Source Current -2 A Dynamic and Switching Parameters Qg Total Gate Charge (V) 4 54 Qg Total Gate Charge (4.5V) VDS=-2V, VGS=-V 2. 27. Qgs Gate-Source Charge ID=-A 4.9 Qgd Gate-Drain Charge 8.8 Ciss Input Capacitance 25 296 Coss Output Capacitance VDS=-2V, VGS=V, f=mhz 2 294 Crss Reverse Transfer Capacitance 26 76 Rg Gate Resistance VGS=V, VDS=V, F=MHZ 8.5.6 Ω td(on) 9.7 Turn-On Time E tr VDD=-2V, VGEN=-V, 9.2 td(off) RG=3Ω ID=-A 96 Turn-Off Time E tf 32 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)=5 C. B. Measure the value in a still air environment at TA=25 C, using an installation mounted on a in2 FR-4 board, maximum junction temperature TJ(MAX)=5 C. C. Using junction-to-case thermal resistance, dissipation limit in the case of additional heat. D. TJ(MAX)=5 C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. E. The pulse test width is 3μs and the duty cycle 2%. F. The EAS data shows Maximum, tested and pulse width limited by maximum. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. nc pf ns Rev.A 2
Normalized Threshold Voltage Ptot-Power(W) -VGS(V) Capacitance(pF) RDS(ON)(mΩ) TYPICAL CHARACTERISTICS 6 4 2 VGS=-5, -6,-V VGS=-4.5V 4 32 TA=25 C 24 8 6 VGS=-4.V 6 VGS=-4.5V 4 2 VGS=-3.5V 8 VGS=-V 2 3 4 5 8 6 24 42 4 -VDS-Drain Source Voltage(V) Output Characteristics Drain-Source On Resistance 8 VDS=-2V ID=-A 3 25 6 2 Ciss 5 4 2 5 5 2 35 4 Qg-Gate Charge(nC) Gate Charge 5 Crss Coss 5 5 2 25 3 35 4 -VDS-Drain Source Voltage(V) Capacitance.2 5. 4 TC=25 C.9.8 3 2.7.6-5 -25 25 5 75 25 5 Gate Threshold Voltage 25 5 75 25 5 Power Dissipation Rev.A 3
-ID (A) Normalized Transient Thermal Resistance Normalized On Resistance TYPICAL CHARACTERISTICS.8 5.6 4 TC=25 C.4 3.2 2.8.6 25 5 75 25 5 RDS(ON) vs Junction Temperature 25 5 75 25 5 TC-Case Temperature( C) Drain Current vs TC Tc=25 C µs µs ms ms DC.. Duty=.5.2..5.2. t Single Pulse.. -VDS Voltage (V) Maximum Safe Operation Area Single Pulse..... Square Wave Pulse Duration(Sec) Thermal Transient Impedance t2 Duty Cycle, D=t/t2 -VGS Ton Toff V Qg VGS Td(on) Tr Td(off) Tf Qgs Qgd 9% % VDS Charge Gate Chrge Waveform Switching Time Waveform Rev.A 4
TO-252 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.2 2.38.87.94 A..27..5 b.64.88.25.35 b2.77.4.3.45 b3 5.2 5.46.25.25 c.46.6.8.24 c2.46.58.8.23 D 6. 6.223.236.245 D 5.2 -.25 - E 6.4 6.73.252.265 E 4.4 -.73 - e 2.286 BSC..9 BSC. H 9.4.4.37.49 L.4.77.55.7 L 2.743 REF..8 REF. L2.58 BSC..2 BSC. L3.89.27.35.5 L4.64..25.4 Ɵ Recommended Land Pattern Rev.A 5