Dual N-Channel MOSFET DESCRIPTION FEATURES SMC4228 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanche and commutation mode.these devices are well suited for high efficiency load switching applications. VDS = 2V, ID = 3A RDS(ON)=.mΩ(Typ.)@VGS=4.5V RDS(ON)=.5mΩ(Typ.)@VGS=3.2V RDS(ON)=.mΩ(Typ.)@VGS=2.5V RDS(ON)=3.5mΩ(Typ.)@VGS=.8V ESD Protection Diode Embedded % Rg tested PART NUMBER INFORMATION SMC 4228 E NB - TR G a b c d e f a : Company name. b : Product Serial number. c : ESD d : Package code NB: DFN3.3X3.3B-8 e : Handling code TR: Tape&Reel f : Green produce code G: RoHS Compliant APPLICATIONS Li-Battery Protection Power Management Load switch Pin D D G2 S2 S G DFN3.3X3.3B-8 Pin G D S G2 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage 2 V VGSS Gate-Source Voltage ± V ID Continuous Drain Current * 3 A TC= C.4 A IDM Pulsed Drain Current A 52 A ID Continuous Drain Current TA=25 C 3 A TA=7 C.4 A PD Power Dissipation B TA=25 C 3. W TA=7 C 2 W IAS Avalanche Current A 6 A EAS Single Pulse Avalanche energy L=.3mH AF 38 mj PD Power Dissipation C 8 W TC= C 7 W TJ Operation Junction Temperature -55/5 C TSTG Storage Temperature Range -55/5 C THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t s 4 Thermal Resistance Junction to Ambient BD 65 C/W Steady-State RθJC Thermal Resistance Junction to Case 7
ELECTRICAL CHARACTERISTICS(TA = 25 C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=V, ID=25μA 3 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=25μA.4.6 V IGSS Gate Leakage Current VDS=V, VGS=±V ± μa IDSS Zero Gate Voltage Drain Current VDS=2V, VGS=V, TJ=25 C VDS=6V, VGS=V, TJ=75 C μa VGS=4.5V, ID=A 2 VGS=4.V, ID=8A.2 2 Drain-source On-Resistance E VGS=3.2V, ID=6A.5 3 mω VGS=2.5V, ID=5A 4 VGS=.8V, ID=3A 3.5 7 Gfs Forward Transconductance VDS=V, ID=A 3 S RDS(ON) Diode Characteristics VSD Diode Forward Voltage E IS=A, VGS=V.7 V IS Continuous Source Current * 3 A Dynamic and Switching Parameters Qg Total Gate Charge 5 2 Qgs Gate-Source Charge VDS=V, VGS=4.5V, ID=A.2.7 Qgd Gate-Drain Charge 3.8 5.3 Ciss Input Capacitance 98 Coss Output Capacitance VDS=V, VGS=V, f=mhz 62 Crss Reverse Transfer Capacitance 7 Rg Gate Resistance VGS=V, VDS=V, F=MHZ 2 Ω td(on) 9 7 Turn-On Time E tr VDD=V, VGEN=4.5V, 6 3 td(off) RG=6Ω, ID=A 45 86 Turn-Off Time E tf 32 6 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)=5 C. B. Measure the value in a still air environment at TA=25 C, using an installation mounted on a in2 FR-4 board, maximum junction temperature TJ(MAX)=5 C. C. Using junction-to-case thermal resistance, dissipation limit in the case of additional heat. D. TJ(MAX)=5 C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. E. The pulse test width is 3μs and the duty cycle 2%. F. The EAS data shows Maximum, tested and pulse width limited by maximum. *. The maximum rating current is limited by package. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. nc pf ns 2
Normalized Threshold Voltage Ptot-Power(W) VGS(V) Capacitance(pF) RDS(ON)(mΩ) TYPICAL CHARACTERISTICS 4 35 VGS=3, 3.2,4,4.5V 8 TA=25 C 3 6 25 VGS=2.5V 4 2 VGS=.8V 5 2 VGS=2.5V 5 VGS=.5V VGS=4.5V VGS=4V 3.2V 2 3 4 5 8 2 4 6 8 2 VDS-Drain Source Voltage(V) Output Characteristics Drain-Source On Resistance 4.5 8 3.6 VDS =V ID =A 5 2.7 2 Ciss 9.8 6.9 3 Coss 3 6 9 2 5 Crss 4 8 2 6 2 Qg-Gate Charge(nC) Gate Charge VDS-Drain Source Voltage(V) Capacitance.5 2.3 6..9.7 2 8.5 4.3-5 -25 25 5 75 25 5 Gate Threshold Voltage 25 5 75 25 5 Power Dissipation 3
Normalized Transient Thermal Resistance Normalized On Resistance TYPICAL CHARACTERISTICS.6 5.5.4 2.3 9.2..9 VGS=4.5V 6 3.8-5 -25 25 5 75 25 5 RDS(ON) vs Junction Temperature 25 5 75 25 5 TC-Case Temperature( C) Drain Current vs TC µs ID (A). ms ms ms DC.. Duty=.5.2..5.2. t t2 Duty Cycle, D=t/t2 Single Pulse... VDS Voltage (V) Maximum Safe Operation Area..... Square Wave Pulse Duration(Sec) Thermal Transient Impedance VGS Ton Toff V Qg VDS Td(on) Tr Td(off) Tf Qgs Qgd 9% % Charge VGS Gate Chrge Waveform Switching Time Waveform 4
DFN3.3X3.3B-8 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A.7.8.28.32 b.25.35..4 c..25.4. D 3.25 3.45.28.36 D 3. 3.2.8.26.78.98.7.78 D3.3.5 E 3.2 3.4.26.34 E 3. 3.2.8.26 E2 2.39 2.59.94.2 e.65bsc..65bsc. H.3.5.2.2 L.3.5.2.2 L.3.5 M.5.6 Ɵ 5 5 Recommended Land Pattern 5