SMC3404S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

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SMC3S Single N-Channel MOSFET DESCRIPTION SMC3 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package. PART NUMBER INFORMATION SMC 3 S - TR G a b c d e a : Company name. b : Product Serial number. c : Package code S: SOT-3L d : Handling code TR: Tape&Reel e : Green produce code G: RoHS Compliant FEATURES VDS = 3V, ID = 6.7A RDS(ON)=8mΩ(Typ.)@VGS=V RDS(ON)=3mΩ(Typ.)@VGS=.5V Fast switch Low gate drive applications High power and current handlingcapability APPLICATIONS Power Management in Note book Portable Equipment DC/DC Converter D D G S SOT-3L G S ABSOLUTE MAXIMUM RATINGS (TA = 5 C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage 3 V VGSS Gate-Source Voltage ± V 6.7 A ID Continuous Drain Current TA=7 C 5.3 A IDM Pulsed Drain Current A 6.8 A PD Power Dissipation C.6 W TA=7 C. W TJ Operation Junction Temperature -55/5 C TSTG Storage Temperature Range -55/5 C THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t s 8 Thermal Resistance Junction to Ambient BD Steady-State C/W SMC3S Rev.A

ELECTRICAL CHARACTERISTICS(TA = 5 C Unless otherwise noted ) SMC3S Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=V, ID=5μA 3 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=5μA.5 V IGSS Gate Leakage Current VDS=V, VGS=±V ± na IDSS Zero Gate Voltage Drain Current VDS=3V, VGS=V, TJ=5 C VDS=V, VGS=V, TJ=75 C μa VGS=V, ID=6.7A 8 RDS(ON) Drain-source On-Resistance VGS=.5V, ID=5.3A 3 3 mω Gfs Forward Transconductance VDS=5V, ID=6A S Diode Characteristics VSD Diode Forward Voltage IS=A, VGS=V.7. V IS Continuous Source Current 3.3 A Dynamic and Switching Parameters Qg(V) Total Gate Charge 8..3 Qg(.5V) Total Gate Charge. 5.7 VDS=5V,VGS=V, ID=6.5A Qgs Gate-Source Charge.6. Qgd Gate-Drain Charge.7 Ciss Input Capacitance Coss Output Capacitance VDS=5V,VGS=V, f=mhz 6 Crss Reverse Transfer Capacitance 5 td(on) 5.3 Turn-On Time tr VDD=5V, VGEN=V, 7.6 td(off) RG=6Ω, ID=A 5.8 3 Turn-Off Time tf. 8 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)=5 C. B. The value is measured with the device mounted on in FR- board in a still air environment TA =5 C with. C. The TJ(MAX)=5 C, using junction-to-ambient thermal resistance. D. TJ(MAX)=5 C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. nc pf ns The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. SMC3S Rev.A

Normalized Threshold Voltage Ptot-Power(W) VGS(V) Capacitance(pF) RDS(ON)(mΩ) SMC3S TYPICAL CHARACTERISTICS 5 V 6V 5V 3 5 5 VGS=.5V VGS=.5V 5 VGS=3.5V 5 VGS=V VGS=3V 3 5 6 8 VDS-Drain Source Voltage(V) Output Characteristics Drain-Source On Resistance 7 8 VDS=5V ID=6A 6 6 8 Ciss 36 Coss 6 8 Qg-Gate Charge(nC) Gate Charge Crss 5 5 5 3 VDS-Drain Source Voltage(V) Capacitance...8.5..9.9.8.6.7.3.6-5 -5 5 5 75 5 5 Gate Threshold Voltage 5 5 75 5 5 Power Dissipation SMC3S Rev.A 3

Normalized Transient Thermal Resistance Normalized On Resistance SMC3S TYPICAL CHARACTERISTICS.8 8.5 6..9.6 5 5 75 5 5 RDS(ON) vs Junction Temperature 5 5 75 5 5 TJ-Case Temperature( C) Drain Current vs TJ µs ID (A). ms DC Single Pulse... VDS Voltage (V) Maximum Safe Operation Area µs ms ms.. Duty=.5...5....... Square Wave Pulse Duration(Sec) Thermal Transient Impedance t t Duty Cycle, D=t/t VGS Ton Toff V Qg VDS Td(on) Tr Td(off) Tf Qgs Qgd 9% % Charge VGS Gate Chrge Waveform Switching Time Waveform SMC3S Rev.A

SMC3S SOT-3L PACKAGE DIMENSIONS Recommended Minimum Pad(mm).8mm.8mm.mm.9mm Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A..3.39.9 A.... A...39.7 b.3.5.. c.7.7..8 D.8 3...8 E.5.7.59.67 E.6 3...8 e.95 TYP..37 TYP. e.9 TYP..75 TYP. L.5.55.. θ 8 8 SMC3S Rev.A 5