DIM375WLS6S DIM375WLS6S IGBT Chopper Module (Lower rm Control) DS57331. February 4 FETURES Low Forward oltage Drop Isolated Copper Baseplate PPLICTIONS Choppers Motor Controllers KEY PRMETERS CES 6 CE(sat) * (typ) 2.1 (max) 375 (PK) (max) 75 *(measured at the power busbars and not the auxiliary terminals) The Powerline range of modules includes half bridge, chopper, bidirectional, dual and single switch configuratio covering voltages from 6 to 33 and currents up to 36. 7(E 2 ) 6(G 2 ) The DIM375WLS6S is a 6 n channel enhancement mode, iulated gate bipolar traistor (IGBT) chopper module configured with the lower arm of the bridge controlled. The module is suitable for a variety of medium voltage applicatio in motor drives and power conversion. 1(,C2) 2(E2) 3(K) The IGBT has a wide reverse bias safe operating area (RBSO) for ultimate reliability in demanding applicatio. These modules incorporate electrically isolated base plates and low inductance cotruction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Fig. 1 Chopper circuit diagram Typical applicatio include dc motor drives, ac pwm drivesand ups systems.. ORDERING INFORMTION Order as: DIM375WLS6S Note: When ordering, use complete part number. Outline type code: W (See package details for further information) Fig. 2 Electrical connectio (not to scale) Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures. 1/8
DIM375WLS6S BSOLUTE MXIMUM RTINGS PER RM Stresses above those listed under 'bsolute Maximum Ratings' may cause permanent damage to the device. In extreme conditio, as with all semiconductors, this may include potentially hazardous rupture of the package. ppropriate safety precautio should always be followed. Exposure to bsolute Maximum Ratings may affect device reliability. = 25 C unless stated otherwise Test Conditio CES Collectoremitter voltage = 6 S Gateemitter voltage ±2 Continuous collector current = 65 C 375 (PK) Peak collector current 1ms, = 95 C 75 P max traistor power dissipation = 25 C, T j = 15 C 1736 W I 2 t Diode I 2 t value R =, t p = 1ms, T vj = 125 C TBD k 2 s isol Isolation voltage per module Commoned terminals to base plate. C RMS, 1 min, 5Hz 2.5 k THERML ND MECHNICL RTINGS Internal iulation: l 2 O 3 Clearance: 13mm Baseplate material: Cu CTI (Critical Tracking Index): 175 Creepage distance: 24mm Test Conditio Min. Typ. R th(jc) Thermal resistance traistor arm Continuous dissipation 72 C/kW junction to case R th(jc) Thermal resistance diode (per arm) Continuous dissipation 135 C/kW (ntiparallel and freewheel diode) junction to case R th(ch) Thermal resistance case to heatsin Mounting torque 5Nm 15 C/kW (per module) (with mounting grease) T j Junction temperature Traistor 15 C Diode 125 C T stg Storage temperature range 4 125 C Screw torque Mounting M6 3 5 Nm Electrical connectio M6 2.5 5 Nm 2/8 Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures.
DIM375WLS6S ELECTRICL CHRCTERISTICS = 25 C unless stated otherwise. Test Conditio Min. Typ. ES Collector cutoff current =, CE = CES 2 m (IGBT and Diode arm) =, CE = CES, = 125 C 1 m I GES Gate leakage current = ±2, CE = 2 µ (TH) Gate threshold voltage = 15m, = CE 4.5 5.5 7.5 CE(sat) Collectoremitter saturation voltage = 15, = 35 2.1 2.6 = 15, = 35,, = 125 C 2.3 2.8 Diode forward current DC 375 M Diode maximum forward current t p = 1ms 75 F Diode forward voltage = 35 1.5 1.8 (IGBT and Diode arm) = 35, = 125 C 1.5 1.8 C ies Input capacitance CE = 25, =, f = 1MHz 4 nf L M Module inductance 2 nh R INT Internal traistor resistance per arm.23 mω Note: Measured at the power busbars and not the auxiliary terminals. L* is the circuit inductance + L M Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures. 3/8
DIM375WLS6S ELECTRICL CHRCTERISTICS = 25 C unless stated otherwise Test Conditio Min. Typ. t d(off) Turnoff delay time = 375 6 t f Fall time = ±15 25 E OFF Turnoff energy loss CE = 3 26 t d(on) Turnon delay time R G(ON) = R G(OFF) = 4.7Ω t r Rise time L ~ nh 15 E ON Turnon energy loss 16 Q g Gate charge 3 µc Q rr Diode reverse recovery charge = 375, R = 3, 2 µc I rr Diode reverse current d /dt = 3/µs E REC Diode reverse recovery energy 5 = 125 C unless stated otherwise Test Conditio Min. Typ. t d(off) Turnoff delay time = 375 65 t f Fall time = ±15 5 E OFF Turnoff energy loss CE = 3 4 t d(on) Turnon delay time R G(ON) = R G(OFF) = 4.7Ω t r Rise time L ~ nh E ON Turnon energy loss 15 Q rr Diode reverse recovery charge = 375, R = 3, 3 µc I rr Diode reverse current d /dt = 3/µs 23 E REC Diode reverse recovery energy 8 4/8 Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures.
DIM375WLS6S TYPICL CHRCTERISTICS 7 6 Common emitter = 25 C ce is measured at power busbars and not the auxiliary terminals 7 6 Common emitter = 125 C ce is measured at power busbars and not the auxiliary terminals 5 5 Collector current, I c () 4 3 Collector current, I c () 4 3 = 1 = 12 = 15 = 2 1 2. 3 4 5 Collectoremitter voltage, ce () = 1 = 12 = 15 = 2 1. 2. 3. 4. 5. 6. Collectoremitter voltage, ce () Fig.3 Typical output characteristics Fig.4 Typical output characteristics 45 4 35 Conditio: = 125ºC cc = 3 R g = 4.7 ohms 6 5 E off E on E rec Switching energy, E sw () 3 25 2 15 Switching Energy, E sw () 4 3 2 1 1 5 E on E off E rec 5 15 25 3 35 4 Collector current, () 2 4 6 8 1 12 14 16 Gate resistance, R g (Ohms) Fig.4 Typical switching energy vs collector current Fig.5 Typical switching energy vs gate resistance Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures. 5/8
DIM375WLS6S 7 F is measured at power busbars and not the auxiliary terminals 9 6 5 T j = 25 C T j = 125 C 8 7 Foward current, () 4 3 Collector current, () 6 5 4 3 Chip Module.5 1. 1.5 2. 2.5 3. Foward voltage, F () Fig.6 Diode typical forward characteristics T j = 125 C ge = ±15 R g = 4.7 4 6 8 Collectoremitter voltage, ce () Fig.7 Reverse bias safe operating area 3 T j = 125 C Traistor Diode Reverse recovery current, I rr () 25 15 5 3 4 5 6 7 Reverse voltage, R () Fig.7 Diode reverse bias safe operating area Traient thermal impedance, Z th (jc) ( C/kW ) 1 1 2 3 4 IGBT R i ( C/KW) 1.6941 6.797 9.831 54.477 τ i (ms).169 4.363 21.9182 92.422 Diode R i ( C/KW) 3.955 17.2139 16.173 98.671 τ 1 i (ms).895 2.6571 17.3886 71.818.1.1.1 1 1 Pulse width, t p (s) Fig.8 Traient thermal impedance 6/8 Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures.
DIM375WLS6S PCKGE DETILS For further package information, please visit our website or contact Customer Services. ll dimeio in mm, unless stated otherwise. DO NOT SCLE. 7(E 2 ) 6(G 2 ) 1(,C2) 2(E2) 3(K) Nominal weight: 42g Module outline type code: W Fig. 15 Package details Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures. 7/8
POWER SSEMBLY CPBILITY The Power ssembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an exteive range of air and liquid cooled assemblies covering the full range of circuit desig in general use today. The ssembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CD methods our team of design and applicatio engineers aim to provide the Power ssembly Complete Solution (PCs). HETSINKS The Power ssembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http:// email: power_solutio@dynexsemi.com HEDQURTERS OPERTIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolhire. LN6 3LF. United Kingdom. Tel: +44()152255 Fax: +44()1522555 CUSTOMER SERICE Tel: +44 ()1522 52753 / 5291. Fax: +44 ()1522 52 SLES OFFICES Benelux, Italy & Switzerland: Tel: +33 ()1 64 66 42 17. Fax: +33 ()1 64 66 42 19. France: Tel: +33 ()2 47 55 75 53. Fax: +33 ()2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 ()1522 52753 / 5291. Fax: +44 ()1522 52 North merica: Tel: (44) 25926. Fax: (44) 259259. Tel: (949) 73335. Fax: (949) 7332986. These offices are supported by Representatives and Distributors in many countries worldwide. Dynex Semiconductor 3 TECHNICL DOCUMENTTION NOT FOR RESLE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not cotitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's respoibility to fully determine the performance and suitability of any equipment using such information and to eure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. ll products and materials are sold and services provided subject to the Company's conditio of sale, which are available on request. ll brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.