l dvanced Process Technology l Ultra Low OnResistance l Surface Mount l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription PRELIMINRY Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G S P 9.3 IRF37S HEXFET Power MOSFET V SS = 0V R S(on) = 0.028Ω I = 46 The 2 Pak is a surface mount power package capable of accommodating die sizes up to HEX4. It provides the highest power capability and the lowest possible onresistance TO263B in any existing surface mount package. The 2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. bsolute Maximum Ratings Parameter Max. Units I @ T C = 25 C Continuous rain Current, V GS @ V 46 I @ T C = 0 C Continuous rain Current, V GS @ V 33 I M Pulsed rain Current 80 P @T = 25 C Power issipation 3.8 W P @T C = 25 C Power issipation 50 W Linear erating Factor.0 W/ C V GS GatetoSource Voltage ± 20 V E S Single Pulse valanche Energy 530 mj I R valanche Current 28 E R Repetitive valanche Energy 5 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to 75 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase.0 R θj Junctiontombient ( PCB Mounted,steadystate)** 40 C/W
IRF37S Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Voltage 0 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0.2 V/ C Reference to 25 C, I = m R S(on) Static raintosource OnResistance 0.028 Ω V GS = V, I = 28 V GS(th) Gate Threshold Voltage 2.0 4.0 V V S = V GS, I = 250µ g fs Forward Transconductance 20 S V S = 25V, I = 28 I SS raintosource Leakage Current 25 V S = 0V, V GS = 0V µ 250 V S = 80V, V GS = 0V, T J = 50 C I GSS GatetoSource Forward Leakage 0 V GS = 20V n GatetoSource Reverse Leakage 0 V GS = 20V Q g Total Gate Charge 90 I = 28 Q gs GatetoSource Charge 26 nc V S = 80V Q gd Gatetorain ("Miller") Charge 82 V GS = V, See Fig. 6 and 3 t d(on) TurnOn elay Time 4 V = 50V t r Rise Time 59 I = 28 ns t d(off) TurnOff elay Time 58 R G = 2.5Ω t f Fall Time 48 R =.7Ω, See Fig. L S Internal Source Inductance 7.5 nh Between lead, and center of die contact C iss Input Capacitance 3000 V GS = 0V C oss Output Capacitance 640 pf V S = 25V C rss Reverse Transfer Capacitance 330 ƒ =.0MHz, See Fig. 5 Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 46 (Body iode) showing the G I SM Pulsed Source Current integral reverse 80 (Body iode) pn junction diode. V S iode Forward Voltage.3 V T J = 25 C, I S = 28, V GS = 0V t rr Reverse Recovery Time 2 320 ns T J = 25 C, I F = 28 Q rr Reverse RecoveryCharge.7 2.6 µc di/dt = 0/µs S Notes: Repetitive rating; pulse width limited by Pulse width 300µs; duty cycle 2%. max. junction temperature. ( See fig. ) V = 25V, starting T J = 25 C, L =.4mH Uses IRF37 data and test conditions R G = 25Ω, I S = 28. (See Figure 2) ƒ I S 28, di/dt 460/µs, V V (BR)SS, T J 75 C ** When mounted on FR4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #N994.
IRF37S I, raintosource C urrent () 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I, raintosource Current () 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T C = 25 C 0. 0 V S, raintosource Voltage (V) Fig. Typical Output Characteristics, T J = 25 o C 20µs PULSE WITH T C = 75 C 0. 0 V S, raintosource Voltage (V) Fig 2. Typical Output Characteristics, T J = 75 o C I, raintos ource C urrent ( ) 00 0 T = 25 C J V S = 50V 20µs PULSE W ITH 4 5 6 7 8 9 V GS T = 75 C J, GatetoSource Voltage (V) R S(on), raintos ource On Resistance (Normalized) 3.0 2.5 2.0.5.0 0.5 I = 46 V GS = V 0.0 60 40 20 0 20 40 60 80 0 20 40 60 80 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature
IRF37S C, Capacitance (pf) 6000 5000 4000 3000 2000 00 C is s C oss C rss V GS = 0V, f = M Hz C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd V, G atetosource V oltage (V ) GS 20 6 2 8 4 I = 28 V S = 80V V S = 50V V S = 20V 0 0 V S, raintosource Voltage (V) FOR TEST CIRCUIT 0 SEE FIGURE 3 0 40 80 20 60 200 Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. raintosource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage I S, Reverse rain Current () 00 0 T = 75 C J T = 25 C J V GS = 0V 0.4 0.8.2.6 2.0 V S, Sourcetorain Voltage (V) I, rain Current () 00 OPE RTION IN THIS RE LIMITE BY RS(on) µs 0 0µs ms ms T C = 25 C T J = 75 C Single Pulse 0 00 V S, raintosource Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage Fig 8. Maximum Safe Operating rea
IRF37S I, rain C urrent (mps) 50 40 30 20 Fig a. Switching Time Test Circuit V S 90% R G V GS V V S Pulse Width µs uty Factor 0. % R.U.T. V 0 25 50 75 0 25 50 75 T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig 9. Maximum rain Current Vs. Case Temperature Fig b. Switching Time Waveforms Therm al R esponse (Z thjc ) 0. = 0.50 0.20 0. 0.05 0.02 Notes: 0.0. uty factor = t / t SINGLE PULSE 2 (THERML RESPONSE) 2. Peak T J = P M x Z thjc T C 0.0 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse uration (sec) PM t t 2 Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase
IRF37S R G VS 20V tp Fig 2a. Unclamped Inductive Test Circuit tp L.U.T IS 0.0Ω 5V RIVER V (BR)SS V E S, Single Pulse valanche Energy (mj) 200 00 800 600 400 200 TOP BOTTOM V = 25V 0 25 50 75 0 25 50 75 Starting T J, Junction Temperature ( C) I 20 28 I S Fig 2b. Unclamped Inductive Waveforms Fig 2c. Maximum valanche Energy Vs. rain Current Current Regulator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF V Q GS Q G.U.T. V S V GS V G 3m Charge Fig 3a. Basic Gate Charge Waveform I G I Current Sampling Resistors Fig 3b. Gate Charge Test Circuit
IRF37S Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. evice Under Test V river Gate rive Period P.W. = P.W. Period V GS =V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Repplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 4. For NChannel HEXFETS
IRF37S Package Outline 2 Pak imensions are shown in millimeters (inches).40 (.055) MX..54 (.45).29 (.405) 2 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048).6 (.400) RE F. 6.47 (.255) 6.8 (.243).78 (.070).27 (.050) 3 5.49 (.6) 4.73 (.580) 2.79 (.) 2.29 (.090) 5.28 (.208) 4.78 (.88) 2.6 (.3) 2.32 (.09) 3X.40 (.055).4 (.045) 5.08 (.200) 3X 0.93 (.037) 0.69 (.027) 0.55 (.022) 0.46 (.08).39 (.055).4 (.045) 8.89 (.350) RE F. 0.25 (.0) M B M MINIMUM RECOMMENE FOOTPRINT.43 (.450) NOTES: IMENSIONS FTER SOLER IP. 2 IMENSIONING & TOLERNCING PER NSI Y4.5M, 982. 3 CONTROLLING IMENSION : INCH. 4 HETSINK & LE IMENSIONS O NOT INCLUE BURRS. LE SSIGNMENTS G TE 2 R IN 3 S OU RC E 8.89 (.350) 3.8 (.50) 7.78 (.700) 2.08 (.082) 2X 2.54 (.0) 2X Part Marking 2 Pak EXMPLE : EXMPLE : THIS IS N IRF THIS WITH IS SSEMBLY N IRF530S LOT W IT H COE SS E9BM MB LY LOT CO E 9B M INTERNTIONL INTERNTIONL RECTIFIER RECTIFIER IRF LOGO 9246 F530S LO GO 9B M9246 SSEMBLY 9B M LOT SSEMBLY COE LOT COE PRT NUMBER PRT NUMBER TE TE COE COE (YYWW) (YYWW) YY = YER YY = YER WW = WEEK WW = WEEK
Tape & Reel 2 Pak imensions are shown in millimeters (inches) TRR.60 (.063).50 (.059) 4. (.6) 3.90 (.53).60 (.063).50 (.059) IRF37S 0.368 (.045) 0.342 (.035) FEE IRECTION TR L.85 (.073).65 (.065).90 (.429).70 (.42).60 (.457).40 (.449) 6. (.634) 5.90 (.626).75 (.069).25 (.049) 5.42 (.609) 5.22 (.60) 24.30 (.957) 23.90 (.94) 4.72 (.36) 4.52 (.78) FEE IRECTION 3.50 (.532) 2.80 (.504) 27.40 (.079) 23.90 (.94) 4 330.00 (4.73) MX. 60.00 (2.362) M IN. NOTES :. COMFORMS TO EI48. 2. CONTROLLING IMENSION: MILLIMETER. 3. IMENSION MESURE @ HUB. 4. INCLUES FLNGE ISTORTION @ OUTER EGE. 26.40 (.039) 24.40 (.96) 3 30.40 (.97) MX. 4 WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) 322 333 EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: 44 883 732020 IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Tel: (905) 475 897 IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: 49 672 96590 IR ITLY: Via Liguria 49, 07 Borgaro, Torino Tel: 39 45 0 IR FR EST: K&H Bldg., 2F, 3304 NishiIkeburo 3Chome, ToshimaKi, Tokyo Japan 7 Tel: 8 3 3983 0086 IR SOUTHEST SI: 35 Outram Road, #02 Tan Boon Liat Building, Singapore 036 Tel: 65 22 837 http://www.irf.com/ ata and specifications subject to change without notice. 6/96