l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) PChannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with R S(on) 60% less than a similar size SOT23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and R S(on) reduction enables a currenthandling increase of nearly 300% compared to the SOT23. G 2 Top View IRLMS6702PbF HEXFET Power MOSFET 6 5 3 4 S Micro6 P 95224 V SS = 20V R S(on) = 0.20Ω bsolute Maximum Ratings Parameter Max. Units I @ T = 25 C Continuous rain Current, V GS @ 4.5V 2.4 I @ T = 70 C Continuous rain Current, V GS @ 4.5V.9 I M Pulsed rain Current 3 P @T = 25 C Power issipation.7 W Linear erating Factor 3 mw/ C V GS GatetoSource Voltage ± 2 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T STG Junction and Storage Temperature Range 55 to 50 C Thermal Resistance Ratings Parameter Min. Typ. Max Units R θj Maximum Junctiontombient 75 C/W www.irf.com /4/05
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Voltage 20 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Voltage Temp. Coefficient 0.005 V/ C Reference to 25 C, I = m 0.200 V GS = 4.5V, I =.6 ƒ R S(on) Static raintosource OnResistance Ω 0.375 V GS = 2.7V, I = 0.80 ƒ V GS(th) Gate Threshold Voltage 0.70 V V S = V GS, I = 250µ g fs Forward Transconductance.5 S V S = 0V, I = 0.80 I SS raintosource Leakage Current.0 V S = 6V, V GS = 0V µ 25 V S = 6V, V GS = 0V, T J = 25 C I GSS GatetoSource Forward Leakage 00 V GS = 2V n GatetoSource Reverse Leakage 00 V GS = 2V Q g Total Gate Charge 5.8 8.8 I =.6 Q gs GatetoSource Charge.8 2.6 nc V S = 6V Q gd Gatetorain ("Miller") Charge 2. 3. V GS = 4.5V, See Fig. 6 and 9 ƒ t d(on) TurnOn elay Time 3 V = 0V t r Rise Time 20 I =.6 ns t d(off) TurnOff elay Time 2 R G = 6.0Ω t f Fall Time 8 R = 6.Ω, See Fig. 0 ƒ C iss Input Capacitance 20 V GS = 0V C oss Output Capacitance 30 pf V S = 5V C rss Reverse Transfer Capacitance 73 ƒ =.0MHz, See Fig. 5 Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol.7 (Body iode) showing the I SM Pulsed Source Current integral reverse G 3 (Body iode) pn junction diode. V S iode Forward Voltage.2 V T J = 25 C, I S =.6, V GS = 0V ƒ t rr Reverse Recovery Time 25 37 ns T J = 25 C, I F =.6 Q rr Reverse RecoveryCharge 5 22 nc di/dt = 00/µs ƒ S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) I S.6, di/dt 00/µs, V V (BR)SS, T J 50 C ƒ Pulse width 300µs; duty cycle 2%. Surface mounted on FR4 board, t 5sec. 2 www.irf.com
I, raintosource Current () 00 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.75V.75V I, raintosource Current () 00 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.75V.75V 20µs PULSE WITH 0. T J = 25 C 0. 0 V S, raintosource Voltage (V) Fig. Typical Output Characteristics 20µs PULSE WITH 0. T J = 50 C 0. 0 V S, raintosource Voltage (V) Fig 2. Typical Output Characteristics I, raintosource Current () 00 0 T J = 25 C T J = 50 C V S = 0V 20µs PULSE WITH 0..5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics R S(on), raintosource On Resistance (Normalized) 2.0.5.0 0.5 I =.6 V GS = 4.5V 0.0 60 40 20 0 20 40 60 80 00 20 40 60 T J, Junction Temperature ( C) Fig 4. Normalized OnResistance Vs. Temperature www.irf.com 3
C, Capacitance (pf) 400 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd C oss = C ds Cgd 300 C iss C oss 200 C rss 00 0 0 00 V S, raintosource Voltage (V) V GS, GatetoSource Voltage (V) 0 8 6 4 2 I =.6 V S = 6V FOR TEST CIRCUIT 0 SEE FIGURE 9 0 2 4 6 8 0 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. raintosource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage I S, Reverse rain Current () 00 0 T J = 50 C T J = 25 C I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY RS(on) 00µs ms 0ms V GS = 0V 0. 0.4 0.6 0.8.0.2.4 V S, Sourcetorain Voltage (V) T = 25 C T J = 50 C Single Pulse 0. 0 00 V, raintosource Voltage (V) S Fig 7. Typical Sourcerain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4 www.irf.com
4.5V Q GS Q G Q G R G V GS V S R.U.T. V V G 4.5V Pulse Width µs uty Factor 0. % Charge Fig 9a. Basic Gate Charge Waveform Fig 0a. Switching Time Test Circuit 2V Current Regulator Same Type as.u.t..2µf 50KΩ.3µF V GS t d(on) t r t d(off) t f 0%.U.T. V S V GS 3m I G I Current Sampling Resistors 90% V S Fig 9b. Gate Charge Test Circuit Fig 0b. Switching Time Waveforms 00 Thermal Response (Z thj ) 0 = 0.50 0.20 0.0 0.05 0.02 0.0 SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J=P M x Z thj T 0. 0.0000 0.000 0.00 0.0 0. 0 00 t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junctiontombient www.irf.com 5
Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer ** V GS * R G dv/dt controlled by R G I S controlled by uty Factor "".U.T. evice Under Test * V * Reverse Polarity of.u.t for PChannel river Gate rive Period P.W. = P.W. Period [ V GS =0V ] ***.U.T. I S Waveform Reverse Recovery Current Repplied Voltage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Ripple 5% Forward rop [ V ] [ ] I S *** V GS = 5.0V for Logic Level and 3V rive evices Fig 2. For Pchannel HEXFET power MOSFETs 6 www.irf.com
Micro6 (SOT23 6L) Package Outline imensions are shown in milimeters (inches) 3.00 (.8 ) 2.80 (. ) B LE SSIGNMENTS RECOMMENE FOOTPRINT S 2X 0.95 (.0375 ).75 (.068 ).50 (.060 ) 6 5 4 2 3 3.00 (.8 ) 2.60 (.03 ) 6 5 4 2 3 2.20 (.087 ) 6X (.06 (.042 ) 0.95 (.0375 ) 2X 0.50 (.09 ) 6X 0.35 (.04 ) 0.5 (.006 ) M C S B S G 6X 0.65 (.025 ).30 (.05 ) 0.90 (.036 ).45 (.057 ) 0.90 (.036 ) O O 0 0 0.20 (.007 ) 6X 0.09 (.004 ) C 0.5 (.006 ) MX. 0.0 (.004 ) 6 SURFCES 0.60 (.023 ) 0.0 (.004 ) NOTES :. IMENSIONING & TOLERNCING PER NSI Y4.5M982. 2. CONTROLLING IMENSION : MILLIMETER. 3. IMENSIONS RE SHOWN IN MILLIMETERS (INCHES). Micro6 (SOT23 6L) Part Marking Information PRT NUMBER PRT NUMBER COE REFERENCE: = IRLMS902 B = IRLMS503 C = IRL MS 6702 = IRLMS 5703 E = IRLMS6802 F = IRLMS4502 G = IRLMS2002 H = IRLMS6803 TOP Note: line above the work week (as shown here) indicates LeadFree. Y = YER W = WE EK LOT COE W = (26) IF PRECEE BY LS T IGIT OF CLENR YER W = (2752) IF PRECEE BY LETTER 27 B 28 C 29 30 E F G H J K 50 5 52 www.irf.com 7 YER 200 2002 2003 2004 2005 2006 2007 2008 2009 200 YER 200 2002 2003 2004 2005 2006 2007 2008 2009 200 Y 2 3 4 5 6 7 8 9 0 Y WORK WE EK 0 02 03 04 24 25 26 WORK WE EK W B C X Y Z W B C Y X Z
Micro6 Tape & Reel Information imensions are shown in milimeters (inches) 8mm 4mm FEE IRECTION NOTES :. OUTLINE CONFORMS TO EI48 & EI54. 78.00 ( 7.008 ) MX. 9.90 (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI48 & EI54. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR s Web site. ata and specifications subject to change without notice. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) 252705 TC Fax: (30) 2527903 Visit us at www.irf.com for sales contact information0/05 8 www.irf.com