UM231 2V P-Channel Power MOSFET General Description UM231S SOT23-3 UM231P SOT323 The UM231 is a low threshold P-channel MOSFET, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The device uses a space-saving, small-outline SOT23-3 or SOT323 package. Applications Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones Pin Configurations Features Drain-Source Voltage(Max): -2V Low On-Resistance: 2mΩ@V GS =-4.5V 25mΩ@V GS =-2.5V Continuous Drain Current(Max) : -1.5A@25 (SOT23-3) -1.1A@25 (SOT323) Top View G 1 3 D XXX S 2 M: Month Code XXX: UM231S 1A UM231P VLD Ordering Information Part Number Packaging Type Marking Code Shipping Qty UM231S SOT23-3 1A 3pcs/7 Inch UM231P SOT323 VLD Tape & Reel http://www.union-ic.com Rev.5 Dec.214 1/7
Absolute Maximum Ratings UM231 Symbol Parameter Value Units V DSS Drain-Source Voltage -2 V V GS Gate-Source Voltage ±8 V I D Continuous Drain Current (5s) SOT23-3 -1.5 SOT323-1.1 A I DP Drain Current Pulsed (Pulse Width 1μs, Duty Cycle 1%) -5 A P D Power Dissipation SOT23-3.86 SOT323.5 W T J Junction Temperature -55~15 Tstg Storage Temperature -55~15 R θja Thermal Resistance, SOT23-3 145 Junction-to-Ambient ( 5s) SOT323 25 /W ESD ESD Method 315.8 2 V Electrical Characteristics (T J =25ºC, Unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit Off Characteristics BV DSS Drain to Source Breakdown Voltage V GS =V, I D =-25μA -2 V I DSS Zero Gate Voltage Drain Current V DS =-2V, V GS =V -.1 μa I GSS Gate-to-Source Leakage Current V GS =±8V, V DS =V ±1 μa On Characteristics R DS(ON) Static Drain-to-Source On-Resistance(Note 1) V GS =-4.5V, I D =-1.A 2 35 V GS =-2.5V, I D =-1.A 25 4 V GS(TH) Gate-Source Threshold Voltage V DS = V GS, I D =-25μA -.4 -.6-1 V g fs Forward Transconductance(Note 1) V DS =-5V, I D =-2.A 4.5 S Dynamic Characteristics(Note 2) mω Ciss Input Capacitance 45 Coss Output Capacitance V GS =V, V DS =-1V, f=1.mhz 15 Crss Reverse Transfer Capacitance 55 pf Switching Characteristics(Note 2) td(on) Turn-on Delay Time 11 2 tr td(off) Rise Time Turn-off Delay Time V DD =-1V, R L =1Ω, I D =-1A, V GEN =-4.5V, R G =1Ω 35 8 6 15 tf Fall Time 5 9 ns Drain-Source Diode Characteristics and Maximum Ratings V SD Forward Diode Voltage I S =-.7A -.8-1.2 V Note 1: Pulse test: pulse width 3μs, duty cycle 2%. Note 2: Guaranteed by design, not subject to production testing. http://www.union-ic.com Rev.5 Dec.214 2/7
ID - Drain Current (ma) RDS(on) -On Resistance (m Ω ) -ID,Drain Current (ma) -ID,Drain Current (ma) UM231 Typical Characteristics (T J =25ºC, Unless otherwise noted) 5 45 4 Output Characteristics Vgs=-1.2V Vgs=-1.5V Vgs=-2.V 3 25 Transfer Characteristics 35 3 25 Vgs=-3.V Vgs=-4.V Vgs=-5.V 2 15 2 15 1 1 5 5 TA=-4 TA=25 TA=125.5 1 1.5 2 2.5 3 3.5 4 4.5 5 1 2 3 -VDS,Drain-to-source Voltage (V) -VGS,Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On Resistance vs. Drain Current 11 1 9 8 25C 43 41 39 37 Vgs=-2.5V Vgs=-4.5V 7 35 6 33 5 4 3 2 1.2.4.6.8 1 1.2 1.4 1.6 VDS - Drain-Source Voltage (V) 31 29 27 25 23 21 1 2 3 4 5 6 ID - Drain Current (A) http://www.union-ic.com Rev.5 Dec.214 3/7
VGS(th) Variance (V) RDS(on) - On-Resistance (m Ω ) RDS(on) - On-Resistance (m Ω ) UM231 Typical Characteristics (T J =25ºC, Unless otherwise noted) On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Ambient Temperature 6 5 TA=-4 TA=25 4 36 Vgs=-2.5V Vgs=-4.5V 4 TA=125 32 3 28 2 24 1 IDS=-1.A 1 2 3 4 5 6 -VGS,Gate-to-Source Voltage (V) 2 IDS=-1.A 16-5 -25 25 5 75 1 125 TA-Ambient Temperature ( ).2.1 Threshold Voltage vs. Ambient Temperature IDS=-25uA IDS=-1mA -.1 -.2 -.3-5 -25 25 5 75 1 125 15 TA - Ambient Temperature - ( ) http://www.union-ic.com Rev.5 Dec.214 4/7
UM231 Package Information Outline Drawing UM231S SOT23-3 E1 D b 3 1 2 e e1 Top View Side View A1 L E A2 A θ.2 L1 c End View DIMENSIONS Symbol MILLIMETERS INCHES Min Max Min Max A 1.5 1.25.41.49 A1..1..4 A2 1.5 1.15.41.45 b.3.5.12.2 c.1.2.4.8 D 2.82 3.2.111.119 E 1.5 1.7.59.67 E1 2.65 2.95.14.116 e.95ref.37ref e1 1.8 2..71.79 L.55REF.22REF L1.3.6.12.24 θ 8 8 Land Pattern 2.2.8 1.9 NOTES: 1. Compound dimension: 2.92 1.6; 2. Unit: mm; 3. General tolerance ±.5mm unless otherwise specified; 4. The layout is just for reference. Tape and Reel Orientation 1A M http://www.union-ic.com Rev.5 Dec.214 5/7
UM231 Outline Drawing A2 HE D b PIN 1 e e Top View Side View A1 E A L1 Q1 End View UM231P SOT323 L c DIMENSIONS Symbol MILLIMETERS INCHES Min Max Min Max D 1.8 2.2.72.88 E 1.15 1.35.6.54 HE 1.8 2.4.72.5 b.25.4.1.16 e.65bsc.26bsc Q1.1.4.4.16 A.8 1.1.32.44 A1..1..4 A2.8 1..32.4 c.1.18.4.7 L.1.3.4.12 L1.425TYP.17TYP Land Pattern.65.65 1.8.5.6 NOTES: 1. Compound dimension: 2. 1.25; 2. Unit: mm; 3.General tolerance ±.5mm unless otherwise specified; 4. The layout is just for reference. Tape and Reel Orientation http://www.union-ic.com Rev.5 Dec.214 6/7
UM231 IMPORTANT NOTICE The information in this document has been carefully reviewed and is believed to be accurate. Nonetheless, this document is subject to change without notice. Union assumes no responsibility for any inaccuracies that may be contained in this document, and makes no commitment to update or to keep current the contained information, or to notify a person or organization of any update. Union reserves the right to make changes, at any time, in order to improve reliability, function or design and to attempt to supply the best product possible. Union Semiconductor, Inc Add: Unit 66, No.57 Shengxia Road, Shanghai 2121 Tel: 21-5193966 Fax: 21-512618 Website: www.union-ic.com http://www.union-ic.com Rev.5 Dec.214 7/7