P- 93842B SMPS MOSFET IRF7455 HEXFET Power MOSFET pplications V SS R S(on) max I l High Frequency C-C Converters with Synchronous Rectification 30V 0.0075Ω 15 Benefits l l l Ultra-Low R S(on) at 4.5V V GS Low Charge and Low Gate Impedance to Reduce Switching Losses Fully Characterized valanche Voltage and Current S S S G 1 8 2 7 3 6 4 5 Top View SO-8 bsolute Maximum Ratings Symbol Parameter Max. Units V S rain-source Voltage 30 V V GS Gate-to-Source Voltage ± 12 V I @ T = 25 C Continuous rain Current, V GS @ V 15 I @ T = 70 C Continuous rain Current, V GS @ V 12 I M Pulsed rain Current 120 P @T = 25 C Maximum Power issipationƒ 2.5 W P @T = 70 C Maximum Power issipationƒ 1.6 W Linear erating Factor 0.02 W/ C T J, T STG Junction and Storage Temperature Range -55 to + 150 C Thermal Resistance Parameter Max. Units R θj Maximum Junction-to-mbient 50 C/W Typical SMPS Topologies l Telecom 48V Input Converters with Logic-Level riven Synchronous Rectifiers Notes through are on page 8 www.irf.com 1 4/20/00
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 30 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Voltage Temp. Coefficient 0.029 V/ C Reference to 25 C, I = 1m 0.00600.0075 V GS = V, I = 15 Ω R S(on) Static rain-to-source On-Resistance 0.0069 0.009 V GS = 4.5V, I = 12 0.0 0.020 V GS = 2.8V, I = 3.5 V GS(th) Gate Threshold Voltage 0.6 2.0 V V S = V GS, I = 250µ 20 V I SS rain-to-source Leakage Current µ S = 24V, V GS = 0V V S = 24V, V GS = 0V, T J = 125 C Gate-to-Source Forward Leakage 200 V GS = 12V I GSS n Gate-to-Source Reverse Leakage -200 V GS = -12V ynamic @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 44 S V S = V, I = 15 Q g Total Gate Charge 37 56 I = 15 Q gs Gate-to-Source Charge 8.9 13 nc V S = 24V Q gd Gate-to-rain ("Miller") Charge 13 20 V GS = 5.0V, ƒ t d(on) Turn-On elay Time 17 V = 15V t r Rise Time 18 ns I = 1.0 t d(off) Turn-Off elay Time 51 R G = 6.0Ω t f Fall Time 44 V GS = 4.5V ƒ C iss Input Capacitance 3480 V GS = 0V C oss Output Capacitance 870 V S = 25V C rss Reverse Transfer Capacitance pf ƒ = 1.0MHz valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy 200 mj I R valanche Current 15 E R Repetitive valanche Energy 0.25 mj iode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 2.5 (Body iode) showing the G I SM Pulsed Source Current integral reverse 120 (Body iode) p-n junction diode. S V S iode Forward Voltage 1.2 V T J = 25 C, I S = 2.5, V GS = 0V ƒ t rr Reverse Recovery Time 64 96 ns T J = 25 C, I F = 2.5 Q rr Reverse RecoveryCharge 99 150 nc di/dt = /µs ƒ 2 www.irf.com
I, rain-to-source Current () 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 25 C 0.1 1 V S, rain-to-source Voltage (V) I, rain-to-source Current () 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 150 C 0.1 1 V S, rain-to-source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 0 2.0 I = 15 I, rain-to-source Current () T J = 150 C T J = 25 C V S= 15V 20µs PULSE WITH 2.4 2.6 2.8 3.0 3.2 3.4 V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 1.5 1.0 0.5 V GS= V 0.0-60 -40-20 0 20 40 60 80 120 140 160 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
C, Capacitance (pf) 6000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds SHORTE Crss = Cgd 5000 Coss = Cds + Cgd 4000 C iss 3000 2000 C oss 0 C rss 0 1 V S, rain-to-source Voltage (V) V GS, Gate-to-Source Voltage (V) 12 8 6 4 2 I = 15 V S = 24V FOR TEST CIRCUIT SEE FIGURE 13 0 0 20 40 60 80 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current () 0 1 T J = 150 C T J = 25 C V GS = 0 V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 V S,Source-to-rain Voltage (V) I, rain Current () 0 OPERTION IN THIS RE LIMITE BY R S(on) us us 1ms T = 25 C ms TJ = 150 C Single Pulse 1 0.1 1 V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4 www.irf.com
16 V S R I, rain Current () 12 8 4 Fig a. Switching Time Test Circuit V S 90% R G V GS V Pulse Width 1 µs uty Factor 0.1 %.U.T. + - V 0 25 50 75 125 150 T, Case Temperature ( C C) Fig 9. Maximum rain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thj ) 1 0.1 = 0.50 0.20 0. 0.05 0.02 0.01 SINGLE PULSE (THERML RESPONSE) Notes: 1. uty factor = t 1 / t 2 2. Peak T J = P M x Z thj + T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse uration (sec) PM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-mbient www.irf.com 5
R S (on), rain-to-source On Resistance ( Ω) R S(on), rain-to -Source On Resistance ( Ω) IRF7455 0.008 0.012 V GS = 4.5V 0.007 0.0 0.006 V GS = V 0.008 I = 15 0.005 0 20 40 60 80 120 I, rain Current () 0.006 2.5 3.0 3.5 4.0 4.5 V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. rain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as.u.t. 12V I S V GS.2µF 50KΩ 3m.3µF.U.T. I G I Current Sampling Resistors + V - S V GS Fig 13a&b. Basic Gate Charge Test Circuit and Waveform tp V (B R)SS R G V S 20V V G tp Q GS L.U.T I S 0.01Ω Q G Q G Charge 15V RIVER + - V E S, Single Pulse valanche Energy (mj) 500 400 300 200 TOP BOTTOM I 6.7 9.5 15 0 25 50 75 125 150 Starting T, Junction Temperature ( J C) Fig 14a&b. Unclamped Inductive Test circuit Fig 14c. Maximum valanche Energy and Waveforms Vs. rain Current 6 www.irf.com
SO-8 Package etails 5 E - - - B - 5 8 7 6 5 1 2 3 4 H 0.25 (.0) M M e 6X θ e1 θ - C - 0. (.004) 1 B 8X 0.25 (.0) M C S B S NOTES: 1. IMENSIONING N TOLERNCING PER NSI Y14.5M-1982. 2. CONTROLLING IMENSION : INCH. 3. IM ENSIONS RE SHOW N IN MILLIMETERS (INCHES). 4. OUTLINE CONFORM S TO JEEC OUTLINE MS-012. L 8X K x 45 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS MOL PROTRUSIONS NOT TO EXCEE 0.25 (.006). 6 IMENSIONS IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE.. 6 C 8X IM INCH ES M ILLIMET ERS MIN MX MIN M X.0532.0688 1.35 1.75 1.0040.0098 0. 0.25 B.014.018 0.36 0.46 C.0075.0098 0.19 0.25.189.196 4.80 4.98 E.150.157 3.81 3.99 e.050 BSIC 1.27 BSIC e1.025 BSIC 0.635 BSIC H.2284.2440 5.80 6.20 K.011.019 0.28 0.48 L 0.16.050 0.41 1.27 θ 0 8 0 8 RECOMMENE FOOTPRINT 0.72 (.028 ) 8X 6.46 (.255 ) 1.27 (.050 ) 3X 1.78 (.070) 8X SO-8 Part Marking www.irf.com 7
SO-8 Tape and Reel TERMINL NUMBER 1 12.3 (.484 ) 11.7 (.461 ) 8.1 (.318 ) 7.9 (.312 ) FEE IRECTION NOTES: 1. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOW N IN MILLIMETERS(INC HES). 3. OUTLINE CONFORMS TO EI-481 & EI-541. 330.00 (12.992) MX. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 1.8mH R G = 25Ω, I S = 15. NOTES : 1. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-481 & EI-541. 14.40 (.566 ) 12.40 (.488 ) ƒ Pulse width 300µs; duty cycle 2%. When mounted on 1 inch square copper board, t< sec IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) 252-75 IR EUROPEN REGIONL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CN: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMNY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITLY: Via Liguria 49, 71 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JPN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEST SI: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TIWN:16 Fl. Suite. 207, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886-(0)2 2377 9936 ata and specifications subject to change without notice. 4/00 8 www.irf.com