IGBT Module Sixpack MWI 15-12A7. I C25 = 30 A V CES = 1200 V V CE(sat) typ. = 2.0 V. Short Circuit SOA Capability Square RBSOA

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MWI 15127 IGBT Module Sixpack Short Circuit SO Capability Square RBSO I C25 = 30 CES = 1200 CE(sat) typ. = 2.0 Part name (Marking on product) MWI15127 13 1 5 9 2 10 1 15 14 E72873 Pin confi guration see outlines. 3 7 11 4 8 12 17 Features: NPT IGBT technology low saturation voltage positive temperature coeffi cient for easy paralleling low switching losses switching frequency up to 30 khz square RBSO, no latch up high short circuit capability MOS input, voltage controlled ultra fast free wheeling diodes solderable pi for PCB mounting space savings reduced protection circuits pplication: C motor control C servo and robot drives power supplies Package: UL registered Industry standard E2pack package with copper base plate package designed for wave soldering 201 IXYS ll rights reserved 1

MWI 15127 IGBTs Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage T J = 25 C to 150 C 1200 GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient I C25 collector current T C = 25 C I C80 T C = 80 C P tot total power dissipation T C = 25 C 140 W CE(sat) collector emitter saturation voltage I C = 15 ; GE = 15 T J = 25 C T J = 125 C 2.0 2.3 ±20 ±30 30 20 2. GE(th) gate emitter threshold voltage I C = 0. m; GE = CE T J = 25 C 4.5.5 I CES collector emitter leakage current CE = CES ; GE = 0 T J = 25 C T J = 125 C 0.8 0.9 m m I GES gate emitter leakage current CE = 0 ; GE = ±20 200 n C ies input capacitance CE = 25 ; GE = 0 ; f = 1 MHz 1000 pf Q G(on) total gate charge CE = 00 ; GE = 15 ; I C = 15 70 nc t d(on) t r t d(off) t f E on E off turnon delay time current rise time turnoff delay time current fall time turnon energy per pulse turnoff energy per pulse inductive load T J = 125 C CE = 00 ; I C = 15 GE = ±15 ; R G = 82 W I CM reverse bias safe operating area RBSO; GE = ±15 ; R G = 82 W L = 100 µh; clamped induct. load T J = 125 C CEmax = CES L S di/dt 35 t SC short circuit safe operating area CE = CES ; GE = ±15 ; T J = 125 C 10 µs (SCSO) R G = 82 W; nonrepetitive R thjc thermal resistance junction to case (per IGBT) 0.88 K/W 100 75 500 70 2.3 1.8 mj mj Diodes Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage T J = 150 C 1200 I F25 I F80 forward current T C = 25 C T C = 80 C F forward voltage I F = 15 ; GE = 0 T J = 25 C T J = 125 C I RM t rr E rec(off) max. reverse recovery current reverse recovery time reverse recovery energy R = 00 di F /dt = 400 /µs T J = 125 C I F = 15 ; GE = 0 2.4 1.7 1 130 0.49 25 17 2.7 mj R thjc thermal resistance junction to case (per diode) 2.1 K/W T C = 25 C unless otherwise stated 201 IXYS ll rights reserved 2

MWI 15127 Module Symbol Definitio Conditio min. typ. max. Unit T J T JM T stg operating temperature max. virtual junction temperature storage temperature 40 40 125 150 125 C C C ISOL isolation voltage I ISOL < 1 m; 50/0 Hz 2500 ~ M d mounting torque (M4) 2.7 3.3 Nm d S d creep distance on surface strike distance through air Weight 180 g R thch thermal resistance case to heatsink with heatsink compound 0.02 K/W mm mm Equivalent Circuits for Simulation I 0 R 0 Symbol Definitio Conditio min. typ. max. Unit 0 R 0 0 R 0 R 1 R 2 C 1 C 2 IGBT Diode R1 R2 R3 R4 C1 C2 C3 C4 T1 T T J = 125 C 1.37 2 D1 D T J = 125 C 1.327 30 n t Zth( t) = R i 1 exp τ i i = 1 τ i = R i C i IGBT Diode mw mw 201 IXYS ll rights reserved 3

MWI 15127 Outline Drawing Dimeio in mm (1 mm = 0.0394 ) 0.8 ±0.2 15 ±1 1.2 ±0.05 Ø 5.5 +0.1 0.3 1.5 ±0.3 0.8 ±0.05 Ø Ø 2.5 Ø 2.1 Ø 0.4 B Product Marking Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MWI 15127 MWI15127 Box 10 48503 201 IXYS ll rights reserved 4

MWI 15127 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. trafer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. Typ. turn off characteristics of free wheeling diode 201 IXYS ll rights reserved 5

MWI 15127 Fig. 7 Typ. turn on energy and switching times versus collector current Fig. 8 Typ. turn off energy and switching times versus collector current Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. traient thermal impedance 201 IXYS ll rights reserved

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