General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS RDSON ID 20V 19m 6.7A Features 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V Improved dv/dt capability Fast switching Green Device Available Suit for 1.8V Gate Drive Applications Applications Notebook Load Switch Hend-Held Instruments Absolute Maximum Ratings Tc=25 unless otherwise noted Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V I D Drain Current Continuous (T C =25 ) 6.7 A Drain Current Continuous (T C =100 ) 4.2 A I DM Drain Current Pulsed 1 26.8 A P D Power Dissipation (T C =25 ) 1.56 W Power Dissipation Derate above 25 0.012 W/ T STG Storage Temperature Range -55 to 150 T J Operating Junction Temperature Range -55 to 150 Thermal Characteristics Symbol Parameter Typ. Max. Unit R θja Thermal Resistance Junction to ambient --- 80 /W 1
Electrical Characteristics (T J =25, unless otherwise noted) Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V, I D =250uA 20 --- --- V BV DSS / T J BV DSS Temperature Coefficient Reference to 25, I D =1mA --- 0.02 --- V/ I DSS V DS =20V, V GS =0V, T J =25 --- --- 1 ua Drain-Source Leakage Current V DS =16V, V GS =0V, T J =125 --- --- 10 ua I GSS Gate-Source Leakage Current V GS =±10V, V DS =0V --- --- ±100 na On Characteristics V GS =4.5V, I D =4A --- 15 19 R DS(ON) V GS(th) Static Drain-Source On-Resistance V GS =2.5V, I D =3A --- 18 24 m V GS =1.8V, I D =2A --- 23 32 Gate Threshold Voltage 0.3 0.6 0.8 V V GS =V DS, I D =250uA V GS(th) V GS(th) Temperature Coefficient --- 2 --- mv/ gfs Forward Transconductance V DS =10V, I S =4A --- 9.5 --- S Dynamic and switching Characteristics Q g Total Gate Charge 2, 3 --- 5.8 8 Q gs Gate-Source Charge 2, 3 V DS=10V, V GS=4.5V, I D =4A --- 0.6 1 Q gd Gate-Drain Charge 2, 3 --- 2 4 T d(on) Turn-On Delay Time 2, 3 --- 5.0 9 T r Rise Time 2, 3 V DD=10V, V GS=4.5V, R G =25 --- 14.4 27 T d(off) Turn-Off Delay Time 2, 3 I D =1A --- 30.0 55 T f Fall Time 2, 3 --- 9.2 17 C iss Input Capacitance --- 600 870 C oss Output Capacitance V DS =10V, V GS =0V, F=1MHz --- 70 100 C rss Reverse Transfer Capacitance --- 45 65 nc ns pf Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current V G =V D =0V, Force Current --- --- 6.7 A I SM Pulsed Source Current --- --- 26.8 A V SD Diode Forward Voltage V GS =0V, I S =1A, T J =25 --- --- 1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed, pulse width 300us, duty cycle 2%. 3. Essentially independent of operating temperature. 2
ID, Continuous Drain Current (A) Normalized On Resistance (m ) T C, Case Temperature ( ) Fig.1 Continuous Drain Current vs. T C T J, Junction Temperature ( ) Fig.2 Normalized RDSON vs. T J Normalized Gate Threshold Voltage (V) VGS, Gate to Source Voltage (V) T J, Junction Temperature ( ) Fig.3 Normalized V th vs. T J Qg, Gate Charge (nc) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJA) ID, Continuous Drain Current (A) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance V DS, Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area 3
Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform 4
SOT23-3S PACKAGE INFORMATION Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.900 1.000 0.035 0.039 A1 0.000 0.100 0.000 0.004 b 0.300 0.500 0.012 0.020 c 0.090 0.110 0.003 0.004 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 TYP. 0.037 TYP. e1 1.800 2.000 0.071 0.079 L 0.550 REF. 0.022 REF. L1 0.300 0.500 0.012 0.020 θ 1 7 1 7 5