400V N-Channel MOSFET Features RDS(ON) (Max 1.00Ω) @ VGS=10V Gate Charge : 18.0 nc (Typical) Improved dv/dt capability / Fast switching 100% EAS Tested BVDSS RDS(ON) MAX ID 400V 1.00Ω 6A TO-220F PKG General Description This device is suitable for. SMPS. Electronic lamp ballasts based on half bridge topology. PFC(Power Factor Correction) Absolute Maximum Ratings ( TC =25 unless otherwise specified ) Symbol Parameter Value Units V DSS Drain to Source Voltage 400 V I D Continuous Drain Current ( @TC=25 ) 6 A Continuous Drain Current ( @TC=100 ) 3.6 A I DM Drain Current Pulsed (Note1) 24 A V GS Gate to Source Voltage ±30 V E AS Single Pulsed Avalanche Energy (Note2) 350 mj E AR Repetitive Avalanche Energy (Note1) 7.6 mj dv/dt Peak Diode Recovery dv/dt (Note3) 4.5 V/ns P D Total Power Dissipation ( @TC=25 ) 40 W Derating Factor above 25 0.35 W/ T J, T STG Operating Junction and Storage Temperature -55 ~ 150 Maximum Lead Temperature for soldering process, T L 300 1/8 from case for 5 seconds Thermal Resistance Characteristics Symbol Parameter Value Min Typical Max Units R θjc Thermal Resistance, Junction-to-Case - - 3.13 /W R θcs Thermal Resistance, Case-to-Sink - - - /W R θja Thermal Resistance, Junction-to-Ambient - - 62.5 /W When mounted on the minimum pad size recommended(pcb Mount) 1/6
Electrical Characteristics(T C = 25 Unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 400 V Breakdown Voltage Temperature ID=250uA, ΔBV DSS/ΔT J 0.6 V/ Coefficient Referenced to 25 I DSS Drain-Source Leakage Current VDS=400V, VGS=0V 1 ua VDS=320V, TC=125 10 ua I GSS Gate-Source Forward Leakage Current VGS=30V, VDS=0V 100 na Gate-Source Reverse Leakage Current VGS=-30V, VDS=0V -100 na On Characteristics V GS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2.0 4.0 V Static Drain-Source On-State R DS(on) Resistance VGS=10V, ID=3A 0.75 1.00 Ω Dynamic Characteristics C iss Input Capacitance 520 VGS=0V,VDS=25V, C oss Output Capacitance 80 pf f=1 MHz C rss Reverse Transfer Capacitance 15 Switching Characteristics t d(on) Turn-On Delay Time 15 t r Turn-On Rise Time VDD=200V,ID=6A, 65 t d(off) Turn-off Delay Time RG=25Ω 20 ns t f Turn-off Fall Time (Note 4,5) 40 Q g Total Gate Charge VDS=320V,ID=6A, 18 nc Q gs Gate-Source Charge VGS=10V 2.5 nc Q gd Gate-Drain Charge (Note 4,5) 8.5 nc Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min Typ Max Units I S Continuous Source-Drain diode Forward Current 6 A I SM Pulsed Source-Drain diode Forward Current 24 A V SD Diode Forward Voltage VGS=0V, IS=6A 1.4 V t rr Reverse Recovery Time VGS=0V, IS=6A, dif/dt=100a/us 230 ns Q rr Reverse Recovery Charge (Note 4) 1800 nc Notes : 1. Repetitive Rating : pulse width limited by maximum junction temperature 2. L=17mH, IAS=6A, R G =25 Ω, V DD =50V, Starting TJ=25 3. ISD 6A, di/dt 200A/us, VDD BVDSS, Starting TJ=25 4. Pulse Test : Pulse width 300us, Duty cycle 2% 5. Essentially independent of operating temperature 2/6
3/6
4/6
5/6
TO-220F PACKAGE DIMENSION Unit : A (mm) B (inch) 6/6