P-Channel Enhancement Features VDS (V) =-V ID =-5.A (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 59mΩ (VGS =-.8V). -. SOT-.95 -..9 -.. -..9 -.. -..55. Unit: mm. -. +.5 G S D -..8 -..97 -..Gate.Source.Drain Absolute Maximum Ratings Ta = 5 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-ambient Thermal Resistance.Junction- to-foot Junction Temperature Storage Temperature Range Symbol 5 sec Steady State Unit VDS VGS - ±8 V Ta = 5-7. -5. ID Ta = 7-5.7 -. A IDM - Ta = 5 PD.5.5 W Ta = 7.6.8 RthJA /W RthJF TJ Tstg 5 5-55 to 5
P-Channel Enhancement Electrical Characteristics Ta = 5 Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-5μA, VGS=V - V Zero Gate Voltage Drain Current IDSS VDS=-V, VGS=V - μa VDS=-V, VGS=V, TJ=55 - Gate-Body leakage current IGSS VDS=V, VGS=±8V ± na Gate Threshold Voltage VGS(th) VDS=VGS ID=-5μA -. - V VGS=-.5V, ID=-5.A 8. 5 5 Static Drain-Source On-Resistance * RDS(On) VGS=-.5V, ID=-.5A 6 5 mω VGS=-.8V, ID=-.A 6 59 On state drain current * ID(ON) VGS=-.5V, VDS=-5V - A Forward Transconductance * gfs VDS=-5V, ID=-.9A.6 S Gate Resistance Rg f=.mhz. Ω Input Capacitance Ciss 5 Output Capacitance Coss VGS=V, VDS=-6V, f=mhz 5 pf Reverse Transfer Capacitance Crss 6 Total Gate Charge Qg VGS=-.5V, VDS=-6V, ID=-5.A 5 5 9 5 nc Gate Source Charge Qgs VGS=-.5V, VDS=-6V, ID=-5.A.9 Gate Drain Charge Qgd.8 Turn-On DelayTime td(on) VGS=-.5V, VDS=-6V, RL=6Ω,RGEN=Ω Turn-On Rise Time tr 5 6 ns Turn-Off DelayTime td(off) ID=-.A 5 7 Turn-Off Fall Time tf Body Diode Reverse Recovery Charge Qrr nc Body Diode Reverse Recovery Time trr 5 IF =. A, di/dt = A/ us,tj=5 Reverse Recovery Fall Time ta 6 ns Reverse Recovery Rise Time tb 6 Maximum Body-Diode Continuous Current IS TC=5 -. A Pulse Diode Forward Current * ISM - Diode Forward Voltage VSD IS=-.A,VGS=V -.7 -. V *Pulse test: PW us duty cycle %. Marking Marking O*
P-Channel Enhancement = 5 thru.5 V. = V 5.5 5 =.5 V..5 T C = 5 C T C = 5 C = V..5..5. Output Characteristics. T C = - 55 C....6.9..5 - Gate-to-Source Voltage (V) Transfer Characteristics - On-Resistance (Ω) R DS(on).8.6.. =.8 V =.5 V =.5 V C - Capacitance (pf) 8 6 C rss C iss C oss. 5 5 On-Resistance vs. Drain Current and Gate Voltage 6 9 Capacitance 8.6 - Gate-to-Source Voltage (V) 6 I D = 5. A V DS = 6 V V DS = V V DS = 9 V R DS(on) - On-Resistance (Ω) (Normalized)....8 I D = 5. A =.5 V =.5 V 5 5 5 Q g - Total Gate Charge (nc) Gate Charge.6-5 - 5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature
P-Channel Enhancement - Source Current (A) IS.. T J = 5 C T J = 5 C T J = - 55 C - On-Resistance (Ω) R DS(on)....8.6.. I D = 5. A T J = 5 C T J = 5 C.....6.8.. V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage.. 5 - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Variance (V) (th).... I D = 5 µa I D = ma Power (W) 8 6 -. T A = 5 C. -. - 5-5 5 5 75 5 5 T J - Temperature ( C) Threshold Voltage.. Time (s) Power Limitedby R DS(on) * µs. T A = 5 C B V DSS Limited ms ms ms s, s s, DC.. * > minimum at which R DS(on) is specified Safe Operating Area
P-Channel Enhancement D uty Cycle =.5 Normalized Effective Transient Thermal Impedance....5.. - - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - D uty Cycle =.5 Normalized Effective Transient Thermal Impedance.. -.. N otes:.5 t t t. Duty Cycle, D =. t. Per Unit Base = R thjf = 5 C/W. T JM - T A = P DM Z (t) thja. Surface Mounted - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - P DM 5