Single P-Channel MOSFET DESCRIPTION SMC5 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss needed in small outline surface mount package. PART NUMBER INFORMATION SMC 5 S - TR G a b c d e a : Company name. b : Product Serial number. c : Package code S: SOT-L d : Handling code TR: Tape&Reel e : Green produce code G: RoHS Compliant FEATURES VDS = -V, ID = -A RDS(ON)=56mΩ(Typ.)@VGS=-V RDS(ON)=78mΩ(Typ.)@VGS=-.5V Fast switch APPLICATIONS Portable Equipment Power Management Load Switch D D S G G SOT-L S ABSOLUTE MAXIMUM RATINGS (TA = 5 C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage - V VGSS Gate-Source Voltage ± V TA=5 C - A ID Continuous Drain Current TA=7 C -. A IDM Pulsed Drain Current A -6 A PD Power Dissipation B TA=5 C.6 W TA=7 C W TJ Operation Junction Temperature -55/5 C TSTG Storage Temperature Range -55/5 C THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t s 8 Thermal Resistance Junction to Ambient BC Steady-State C/W Rev.A
ELECTRICAL CHARACTERISTICS(TA = 5 C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=V, ID=-5μA - V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-5μA - -.5 - V IGSS Gate Leakage Current VDS=V, VGS=±V ± na IDSS Zero Gate Voltage Drain Current VDS=-V, VGS=V, TJ=5 C - VDS=-V, VGS=V, TJ=75 C - μa VGS=-V, ID=-A 56 65 RDS(ON) Drain-source On-Resistance VGS=-.5V, ID=-A 78 9 mω Gfs Forward Transconductance VDS=-V, ID=-A 7. S Diode Characteristics VSD Diode Forward Voltage IS=-A,VGS=V -.7 - V IS Continuous Source Current - A Dynamic and Switching Parameters Qg Total Gate Charge 9.8.8 Qg Qgs Total Gate Charge (.5V) Gate-Source Charge VDS=-5V, VGS=-V ID =-.7A.8.7 5.8 Qgd Gate-Drain Charge.8 Ciss Input Capacitance 5 Coss Output Capacitance VDS =-5V,VGS =V, f =MHz 8 Crss Reverse Transfer Capacitance td(on). 6 Turn-On Time tr VDD=-5V, VGEN=-V 9.5 8 td(off) RG=.Ω, ID=-A 6 Turn-Off Time tf 5.7 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)=5 C. B. Measure the value in a still air environment at TA=5 C, using an installation mounted on a in FR- board, maximum junction temperature TJ(MAX)=5 C. C. TJ(MAX)=5 C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. nc pf ns Rev.A
Normalized Threshold Voltage Ptot-Power(W) -VGS(V) Capacitance(pF) RDS(ON)(mΩ) TYPICAL CHARACTERISTICS 8 5 VGS=-.5, -5, -7, -V VGS=-V TA=5 C 8 9 VGS=-.5V 6 VGS=-.V 6 VGS=-V VGS=-.5V 5 6 8 -VDS-Drain Source Voltage(V) Output Characteristics Drain-Source On Resistance 8 VDS=-5V ID=-.7A 8 7 6 6 5 Ciss Coss 6 8 Crss 5 5 5 Qg-Gate Charge(nC) Gate Charge -VDS-Drain Source Voltage(V) Capacitance..8 TA=5 C..5..9.9.8.6.7..6-5 -5 5 5 75 5 5 Gate Threshold Voltage 5 5 75 5 5 Power Dissipation Rev.A
-ID (A) Normalized Transient Thermal Resistance Normalized Threshold Voltage TYPICAL CHARACTERISTICS.7 5 TA=5 C.5...9.7.5-5 -5 5 5 75 5 5 Gate Threshold Voltage 5 5 75 5 5 TJ-Case Temperature( C) Drain Current vs TJ TA=5 C µs. µs ms ms... s DC - VDS Voltage (V) Maximum Safe Operation Area.. Duty=.5...5.. Single Pulse..... Square Wave Pulse Duration(Sec) Thermal Transient Impedance t t Duty Cycle, D=t/t -VGS Ton Toff V Qg VGS Td(on) Tr Td(off) Tf Qgs Qgd 9% % VDS Charge Gate Chrge Waveform Switching Time Waveform Rev.A
SOT-L PACKAGE DIMENSIONS Recommended Minimum Pad(mm).8mm.8mm.mm.9mm Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A...9.9 A.... A...9.7 b..5.. c.7.7..8 D.8...8 E.5.7.59.67 E.6...8 e.95 TYP..7 TYP. e.9 TYP..75 TYP. L.5.55.. θ 8 8 Rev.A 5