SOT-.9 -. +.. -. +. Unit: mm Features VDS (V) = V ID =.8 A (VGS = V) RDS(ON) < 6mΩ (VGS = V) RDS(ON) < mω (VGS =.V). -. +..9 -. +..9 -. +.. -. +.... -. +. Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish D () -..8 -. +..97 -. +.. Gate. Source. Drain G () () S Absolute Maximum Ratings Ta = Drain-Source Voltage Gate-Source Voltage Parameter Symbol Rating Unit VDS VGS ± Tc=.8 Tc=7.7 Continuous Drain Current (TJ = ) ID Ta=. A Ta=7.6 Pulsed Drain Current (t=us) Power Dissipation IDM Tc=. Tc=7. Ta=. Ta=7.8 Thermal Resistance.Junction- to-ambient t s RthJA Thermal Resistance.Junction- to-foot RthJF 6 Junction Temperature TJ Storage Temperature Range Tstg - to PD V W /W
Electrical Characteristics Ta = Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=μA, VGS=V V Zero Gate Voltage Drain Current IDSS VDS=V, VGS=V VDS=V, VGS=V, TJ= μa Gate-Body Leakage Current IGSS VDS=V, VGS=±V ± na Gate Threshold Voltage VGS(th) VDS=VGS, ID=μA.. V Static Drain-Source On-Resistance VGS=V, ID=.A 6 mω VGS=.V, ID=.A On State Drain Current ID(ON) VGS=V, VDS V A Forward Transconductance gfs VDS=V, ID=.A S Input Capacitance Ciss Output Capacitance Coss VGS=V, VDS=V, f=mhz 78 pf Reverse Transfer Capacitance Crss Gate Resistance Rg VGS=V, VDS=V, f=mhz.7 7 Ω Total Gate Charge RDS(On) Qg VGS=V, VDS=V, ID=.A 6.. Gate Source Charge Qgs VGS=.V, VDS=V, ID=.A. Gate Drain Charge Qgd. Turn-On DelayTime td(on) 8 Turn-On Rise Time tr VDD= V, RL=.Ω 8 7 Turn-Off DelayTime td(off) ID=.A, VGEN=.V, Rg = Ω 8 7 Turn-Off Fall Time tf Turn-On DelayTime td(on) Turn-On Rise Time tr VDD= V, RL=.Ω Turn-Off DelayTime td(off) ID=.6A, VGEN=V, Rg = Ω Turn-Off Fall Time tf 8 6 Body Diode Reverse Recovery Time trr 8 Body Diode Reverse Recovery Charge Qrr nc IF=.6A, di/dt= A/μs, TJ = Reverse Recovery Fall Time ta 7 ns Reverse Recovery Rise Time tb Maximum Body-Diode Continuous Current IS Tc =.7 A Pulse Diode Forward Current ISM Diode Forward Voltage VSD IS=.6A,VGS=V. V Note.Pulse test; pulse width μs, duty cycle %. nc ns Marking Marking H6* F
= V thru V = V T C = C T C = C T C = - C.. - Drain-to-Source Voltage (V) Output Characteristics.7...8. - Gate-to-Source Voltage (V) Transfer Characteristics. R DS(on) - On-Resistance (Ω).... =. V = V C - Capacitance (pf) 6 7 8 9 C rss C oss C iss. On-Resistance vs. Drain Current and Gate Voltage - Drain-to-Source Voltage (V) Capacitance.8 - Gate-to-Source Voltage (V) 8 6 I D =. A = V = 8 V = V R DS(on) - On-Resistance (Normalized)...9 I D =. A =. V = V 6 8 Q g - Total Gate Charge (nc) Gate Charge.6 - - 7 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature
. I D =. A I S - Source Current (A) T J = C T J = C R DS(on) - On-Resistance (Ω).8.6.. T J = C T J = C.....6.8.. V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 6 8 - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage I D = µa.7 (th) (V). 6. 8.8. - - 7 T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power (Junction-to-Ambient) 7.. Limited by R DS(on) * T C = C Single Pulse BVDSS Limited µs ms ms ms s DC.. - Drain-to-Source Voltage (V) * > minimum at which R DS(on) Safe Operating Area, Junction-to-Ambient.6 Package Limited..8. 7 T C - Case Temperature ( C) Current Derating
....9...6.. 7 7 T C - Case Temperature ( C) T A - Ambient Temperature ( C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient Duty Cycle =. Normalized Effective Transient Thermal Impedance.. Notes:.. P DM t. t t. Duty Cycle, D = t. Per Unit Base = R thja = C/W. T JM - T A = P DM Z (t) thja Single Pulse. Surface Mounted. - - - - Square Wave Pulse Duration (s) Normalized Thermal Transient Im pedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle =.... -.. Single Pulse - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot -