RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON and gate charge for most of the synchronous buck converter applications. The meet the RoHS and Green Product requirement with full function reliability approved. SOP-8 B L D M FEATURES Advanced high cell density Trench technology Super Low Gate Charge Green Device Available H G A C J K F N E MARKING 4504SS = Date Code REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.79 6.20 H 0.33 0.51 B 4.70 5.11 J 0.375 REF. C 3.80 4.00 K 45 REF. D 0 8 L 1.3 1.752 E 0.40 1.27 M 0 0.25 F 0.10 0.25 N 0.25 REF. G 1.27 TYP. PACKAGE INFORMATION Package MPQ Leader Size S1 D1 SOP-8 2.5K 13 inch G1 D1 S2 D2 G2 D2 ABSOLUTE MAXIMUM RATINGS Parameter Symbol N-Ch Ratings P-Ch Unit Drain-Source Voltage V DS 40-40 V Gate-Source Voltage V GS ±20 ±20 V Continuous Drain Current 1, V GS@10V T A=25 C 7.2-6.5 A T A=100 C I D 5.6-5.1 A Pulsed Drain Current 3 I DM 14.5-13 A Total Power Dissipation T C=25 C P D 2.5 W Operating Junction and Storage Temperature Range T J, T STG -55~150 C Thermal Data Thermal Resistance Junction-ambient 1 R θja 85 Thermal Resistance Junction-ambient 2 R θja 135 C / W Thermal Resistance Junction-case 1 R θjc 50 28-Aug-2017 Rev. B Page 1 of 7
N-CHANNEL ELECTRICAL CHARACTERISTICS (T J=25 C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 40 - - V V GS=0, I D=250uA Gate Threshold Voltage V GS(th) 1.0-2.5 V V DS=V GS, I D=250uA Forward Transfer conductance g fs - 14 - S V DS=5V, I D=6A Gate-Source Leakage Current I GSS - - ±100 na V GS = ±20V T J=25 C - - 1 Drain-Source Leakage Current I DSS TJ=55 C - - 5 ua V DS=32V, V GS=0 Static Drain-Source On-Resistance 4 R DS(ON) Total Gate Charge Q g - 5.5 - Gate-Source Charge Q gs - 1.25 - Gate-Drain ( Miller ) Change Q gd - 2.5 - Turn-on Delay Time T d(on) - 8.9 - Rise Time T r - 2.2 - Turn-off Delay Time T d(off) - 41 - Fall Time T f - 2.7 - Input Capacitance C iss - 593 - Output Capacitance C oss - 76 - Reverse Transfer Capacitance C rss - 56 - - - 30 mω V GS=10V, I D=6A - - 40 V GS=4.5V, I D=4A Source-Drain Diode nc ns pf I D=6A V DS=20V V GS=4.5V V DD=20V V GS=10V I D=1A R G=3.3Ω R D=20Ω V GS=0 V DS=15V f=1.0mhz Forward On Voltage 4 V SD - - 1.2 V I S=1A, V GS=0, T J=25 C Continuous Source Current 1 I S - - 7.2 A Pulsed Source Current 3 I SM - - 14.5 A Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper 2. When mounted on Min. copper pad. 3. Pulse width limited by maximum junction temperature, pulse width 300us, duty cycle 2% 4. The data tested by pulsed, pulse width 300us, duty cycle 2% 28-Aug-2017 Rev. B Page 2 of 7
P-CHANNEL ELECTRICAL CHARACTERISTICS (T J=25 C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS -40 - - V V GS=0, I D= -250uA Gate Threshold Voltage V GS(th) -1 - -2.5 V V DS=V GS, I D= -250uA Forward Transfer conductance g fs - 12 - S V DS= -5V, I D= -6A Gate-Source Leakage Current I GSS - - ±100 na V GS=±20V T J=25 C - - -1 Drain-Source Leakage Current I DSS TJ=55 C - - -5 ua V DS= -32V, V GS=0 Static Drain-Source On-Resistance 4 R DS(ON) Total Gate Charge Q g - 9 - Gate-Source Charge Q gs - 2.54 - Gate-Drain ( Miller ) Change Q gd - 3.1 - Turn-on Delay Time T d(on) - 19.2 - Rise Time T r - 12.8 - Turn-off Delay Time T d(off) - 48.6 - Fall Time T f - 4.6 - Input Capacitance C iss - 1004 - Output Capacitance C oss - 108 - Reverse Transfer Capacitance C rss - 80 - - - 40 mω V GS= -10V, I D= -6A - - 65 V GS= -4.5V, I D= -4A Source-Drain Diode nc ns pf I D= -6A V DS= -20V V GS= -4.5V V DS= -15V V GS= -10V I D= -1A R G=3.3Ω R D=20Ω V GS=0 V DS= -15V f=1.0mhz Forward On Voltage 1 V SD - - -1 V I S= -1A, V GS=0V, T J=25 C Continuous Source Current 3 I S - - -6.5 A Pulsed Source Current 4 I SM - - -13 A Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper 2. When mounted on Min. copper pad. 3. Pulse width limited by maximum junction temperature, pulse width 300us, duty cycle 2% 4. The data tested by pulsed, pulse width 300us, duty cycle 2% 28-Aug-2017 Rev. B Page 3 of 7
CHARACTERISTIC CURVE (N-Ch) 28-Aug-2017 Rev. B Page 4 of 7
CHARACTERISTIC CURVE (N-Ch) 28-Aug-2017 Rev. B Page 5 of 7
CHARACTERISTIC CURVE (P-Ch) 28-Aug-2017 Rev. B Page 6 of 7
CHARACTERISTIC CURVE (P-Ch) 28-Aug-2017 Rev. B Page 7 of 7