SMC22H Single P-Channel MOSFET DESCRIPTION SMC22 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanche and commutation mode.these devices are well suited for high efficiency fast switching applications. PART NUMBER INFORMATION SMC 22 H - TR G a b c d e a : Company name. b : Product Serial number. c : Package code H:TO-22 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant FEATURES VDS = -3V, ID = -22A RDS(ON)=38mΩ(Typ.)@VGS=-V RDS(ON)=mΩ(Typ.)@VGS=-4.V High power and current handling capability APPLICATIONS LED Application Power Management G S TO-22 D G D S ABSOLUTE MAXIMUM RATINGS (TA = 2 C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage -3 V VGSS Gate-Source Voltage ±2 V TC=2 C -22 A ID Continuous Drain Current TC= C -4 A IDM Pulsed Drain Current A -8 A ID PD Continuous Drain Current Power Dissipation B TA=2 C -9.2 A TA=7 C -7.3 A TA=2 C 2. W TA=7 C.6 W IAS Avalanche Current A - A EAS Single Pulse Avalanche energy L=.3mH AF 33. mj PD Power Dissipation C TC=2 C 3 W TC= C 4 W TJ Operation Junction Temperature -/ C TSTG Storage Temperature Range -/ C THERMAL RESISTANCE Symbol Parameter Typ Max Units Thermal Resistance Junction to Ambient B t s 2 RθJA Thermal Resistance Junction to Ambient BD Steady-State RθJC Thermal Resistance Junction to Case 3. C/W
ELECTRICAL CHARACTERISTICS(TA = 2 C Unless otherwise noted ) SMC22H Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=V, ID=-2μA -3 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-2μA - -. -2. V IGSS Gate Leakage Current VDS=V, VGS=±2V ± na IDSS Zero Gate Voltage Drain Current VDS=-3V,VGS=V, TJ=2 C - VDS=-24V, VGS=V, TJ=7 C - μa Drain-source On-Resistance E VGS=-V, ID=-9.2A 38 4 VGS=-4.V, ID=-7A 6 mω Gfs Forward Transconductance VDS=-V, ID=-6.6A 22 S RDS(ON) Diode Characteristics VSD Diode Forward Voltage E IS=-A, VGS=V -.7 - V IS Continuous Source Current -4.6 A Dynamic and Switching Parameters Qg Total Gate Charge (V).8 22. Qg Qgs Total Gate Charge (4.V) Gate-Source Charge VDS=-V, VGS=-V, ID=-4.A 7.7 2.3.8 3.2 Qgd Gate-Drain Charge 2.6 3.6 Ciss Input Capacitance 64 Coss Output Capacitance VDS=-V, VGS=V, f=mhz 63 Crss Reverse Transfer Capacitance 2 td(on) 6 Turn-On Time tr VDD=-V, VGEN=-V, 2 23 td(off) RG=3.3Ω, ID=-A 2. 48 Turn-Off Time tf 7 3 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)= C. B. The value of RθJA is measured with the device mounted on in2 FR-4 board in a still air environment with maximum junction temperature TJ(MAX)= C (initial temperature TA=2 C). C. TJ(MAX)= C,using junction-to-ambient thermal resistance, t sec. D. TJ(MAX)= C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. E. The data tested by pulsed, pulse width 3uS, duty cycle 2%. F. The EAS data shows Max, tested and pulse width limited by TJ(MAX)= C (initial temperature TJ=2 C). nc pf ns The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 2
Normalized Threshold Voltage Ptot-Power(W) -VGS(V) Capacitance(pF) RDS(ON)(mΩ) SMC22H TYPICAL CHARACTERISTICS 2 2-4.V VGS=-,-6,-8,-V VGS=-4V 8 7 6 TA=2 C VGS=-4.V VGS=-3.V 4 3 VGS=-V VGS=-3V 2 VGS=-2.V 2 3 4 3 6 9 2 -VDS-Drain Source Voltage(V) Output Characteristics Drain-Source On Resistance 8 VDS=-V ID=-4.A 2 6 8 6 Ciss 4 4 2 3 6 9 Qg-Gate Charge(nC) Gate Charge 2 Crss Coss 2 2 3 -VDS-Drain Source Voltage(V) Capacitance.2. 4 3 TC=2 C 3 2.9 2.8.7.6 - -2 2 7 2 2 7 2 Gate Threshold Voltage Power Dissipation 3
-ID (A) Normalized Transient Thermal Resistance Normalized On Resistance SMC22H TYPICAL CHARACTERISTICS.8 2.6 2 TC=2 C.4.2.8.6 - -2 2 7 2 RDS(ON) vs Junction Temperature 2 7 2 TC-Case Temperature( C) Drain Current vs TC TC=2 C µs ms ms ms DC. Duty=..2...2... t Single Pulse... - VDS Voltage (V) Maximum Safe Operation Area..... Square Wave Pulse Duration(Sec) Thermal Transient Impedance t2 Duty Cycle, D=t/t2 -VGS Ton Toff V Qg VGS Td(on) Tr Td(off) Tf Qgs Qgd 9% % VDS Charge Gate Chrge Waveform Switching Time Waveform 4
SMC22H TO-22 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.2 2.38.87.94 A..27.. b.64.88.2.3 b2.77.4.3.4 b3.2.46.2.2 c.46.6.8.24 c2.46.8.8.23 D 6. 6.223.236.24 D.2 -.2 - E 6.4 6.73.22.26 E 4.4 -.73 - e 2.286 BSC..9 BSC. H 9.4.4.37.49 L.4.77..7 L 2.743 REF..8 REF. L2.8 BSC..2 BSC. L3.89.27.3. L4.64..2.4 Ɵ Recommended Land Pattern