SMC66SN Single N-Channel MOSFET DESCRIPTION SMC66 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package. PART NUMBER INFORMATION SMC 66 SN - TR G a b c d e a : Company name. b : Product Serial number. c : Package code SN: SOT- d : Handling code TR: Tape&Reel e : Green produce code G: RoHS Compliant FEATURES VDS = 6V, ID =.5A RDS(ON)=58mΩ(Typ.)@VGS=V RDS(ON)=66mΩ(Typ.)@VGS=.5V Fast switching APPLICATIONS Motor drive Power Management LED Lighting D D G SOT- S G S ABSOLUTE MAXIMUM RATINGS (TA = 5 C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage 6 V VGSS Gate-Source Voltage ± V TA=5 C.5 A ID Continuous Drain Current TA=7 C.8 A IDM Pulsed Drain Current A.8 A IAS Avalanche Current A 5 A EAS Single Pulse Avalanche energy L=.mH AD.75 mj PD Power Dissipation B TA=5 C. W TA=7 C.8 W TJ Operation Junction Temperature -55/5 C TSTG Storage Temperature Range -55/5 C THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t s 95 Thermal Resistance Junction to Ambient BC Steady-State C/W SMC66SN Rev.A
ELECTRICAL CHARACTERISTICS(TA = 5 C Unless otherwise noted ) SMC66SN Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=V, ID=5μA 6 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=5μA..8.5 V IGSS Gate Leakage Current VDS=V, VGS=±V ± na IDSS Zero Gate Voltage Drain Current VDS=6V, VGS=V, TJ=5 C VDS=8V, VGS=V, TJ=75 C μa VGS=V, ID=.5A 58 6 RDS(ON) Drain-source On-Resistance VGS=.5V, ID=.8A 66 76 mω Gfs Forward Transconductance VDS=V, ID=.5A 6.8 S Diode Characteristics VSD Diode Forward Voltage IS=A, VGS=V V IS Continuous Source Current.8 A trr Revese Recovery Time IS=A, dl/dt=a/μs.8 ns Qrr Revese Recovery Charge TJ=5 C.6 nc Dynamic and Switching Parameters Qg Total Gate Charge 9..8 Qg Total Gate Charge (.5V).5 6.8 VDS=V, VGS=V, ID=.5A Qgs Gate-Source Charge..5 Qgd Gate-Drain Charge.8.7 Ciss Input Capacitance 95 Coss Output Capacitance VDS=V, VGS=V, f=mhz Crss Reverse Transfer Capacitance 5 Rg Gate Resistance VGS=V, VDS=V, F=MHZ.95 Ω td(on). 9 Turn-On Time tr VDD=V, VGEN=V, 9. 8 td(off) RG=.Ω, ID=A 7.5 5 Turn-Off Time tf 5.5 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)=5 C. B. The value of RθJA is measured with the device mounted on in FR- board in a still air environment with maximum junction temperature TJ(MAX)=5 C (initial temperature TA=5 C). C. TJ(MAX)=5 C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. D. The EAS data shows Max, tested and pulse width limited by TJ(MAX)=5 C (initial temperature TJ=5 C). nc pf ns The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. SMC66SN Rev.A
Normalized Threshold Voltage Ptot-Power(W) VGS(V) Capacitance(pF) RDS(ON)(mΩ) SMC66SN TYPICAL CHARACTERISTICS 5 VGS=5, 6, V TA=5 C.5V 9 VGS=V 8 6 6 VGS=.5V VGS=.5V VGS=V VGS=V 5 6 8 VDS-Drain Source Voltage(V) Output Characteristics Drain-Source On Resistance 8 VDS=V ID=.5A 8 7 6 6 5 Ciss 6 8 Qg-Gate Charge(nC) Gate Charge Crss Coss 5 6 VDS-Drain Source Voltage(V) Capacitance.... TA=5 C.9.8.7.8.6...6-5 -5 5 5 75 5 5 Gate Threshold Voltage 5 5 75 5 5 Power Dissipation SMC66SN Rev.A
Normalized Transient Thermal Resistance Normalized Threshold Voltage SMC66SN TYPICAL CHARACTERISTICS.7.5 TA=5 C..5..8.5.5.5. -5-5 5 5 75 5 5 Gate Threshold Voltage 5 5 75 5 5 TJ-Case Temperature( C) Drain Current vs TJ TA=5 C ID (A).... VDS Voltage (V) Maximum Safe Operation Area µs ms ms ms DC.. Duty=.5...5.. Single Pulse..... Square Wave Pulse Duration(Sec) Thermal Transient Impedance t t Duty Cycle, D=t/t VGS Ton Toff V Qg VDS Td(on) Tr Td(off) Tf Qgs Qgd 9% % Charge VGS Gate Chrge Waveform Switching Time Waveform SMC66SN Rev.A
SMC66SN SOT- PACKAGE DIMENSIONS.8mm.8mm.mm.9mm Recommended Land Pattern Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A.9.5.5.5 A.... A.9.5.5. b..5.. c.8.5..6 D.8...8 E...7.55 E.5.55.89. e.95 TYP..7 TYP e.8..7.79 L.55 REF.. REF. L..5.. θ 8 8 SMC66SN Rev.A 5