l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. PRELIMINRY G P 9.309B IRF37 HEXFET Power MOSFET S TO220B V SS = 0V R S(on) = 0.025Ω I = 49 bsolute Maximum Ratings Parameter Max. Units I @ T C = 25 C Continuous rain Current, V GS @ V 49 I @ T C = 0 C Continuous rain Current, V GS @ V 35 I M Pulsed rain Current 80 P @T C = 25 C Power issipation 50 W Linear erating Factor.0 W/ C V GS GatetoSource Voltage ± 20 V E S Single Pulse valanche Energy 530 mj I R valanche Current 28 E R Repetitive valanche Energy 5 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to 75 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 632 or M3 srew lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase.0 R θcs CasetoSink, Flat, Greased Surface 0.50 C/W R θj Junctiontombient 62 7/5/97
IRF37 Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Voltage 0 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0.2 V/ C Reference to 25 C, I = m R S(on) Static raintosource OnResistance 0.025 Ω V GS = V, I = 28 V GS(th) Gate Threshold Voltage 2.0 4.0 V V S = V GS, I = 250µ g fs Forward Transconductance 20 S V S = 25V, I = 28 I SS raintosource Leakage Current 25 V µ S = 0V, V GS = 0V 250 V S = 80V, V GS = 0V, T J = 50 C I GSS GatetoSource Forward Leakage 0 V GS = 20V n GatetoSource Reverse Leakage 0 V GS = 20V Q g Total Gate Charge 90 I = 28 Q gs GatetoSource Charge 26 nc V S = 80V Q gd Gatetorain ("Miller") Charge 82 V GS =.7V, See Fig. 6 and 3 t d(on) TurnOn elay Time 4 V = 50V t r Rise Time 59 I = 28 ns t d(off) TurnOff elay Time 58 R G = 2.5Ω t f Fall Time 48 R =.7Ω, See Fig. Between lead, L Internal rain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 3000 V GS = 0V C oss Output Capacitance 640 pf V S = 25V C rss Reverse Transfer Capacitance 330 ƒ =.0MHz, See Fig. 5 S Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 49 (Body iode) showing the G I SM Pulsed Source Current integral reverse 80 (Body iode) pn junction diode. S V S iode Forward Voltage.3 V T J = 25 C, I S = 28, V GS = 0V t rr Reverse Recovery Time 2 320 ns T J = 25 C, I F = 28 Q rr Reverse RecoveryCharge.7 2.6 µc di/dt = 0/µs t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L S L ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L =.4mH R G = 25Ω, I S = 28. (See Figure 2) ƒ I S 28, di/dt 460/µs, V V (BR)SS, T J 75 C Pulse width 300µs; duty cycle 2%.
IRF37 I, raintosource Current () 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I, raintosource C urrent () 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T C = 25 C 0. 0 V S, raintosource Voltage (V) 20µs PULSE WITH T C = 75 C 0. 0 V S, raintosource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, raintos ource C urrent ( ) 00 0 T = 25 C J V S = 50V 20µs PULSE W ITH 4 5 6 7 8 9 V GS T = 75 C J, GatetoSource Voltage (V) R S(on), raintos ource On Resistance (Normalized) 3.0 2.5 2.0.5.0 0.5 I = 46 V GS = V 0.0 60 40 20 0 20 40 60 80 0 20 40 60 80 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature
IRF37 C, Capacitance (pf) 6000 5000 4000 3000 2000 00 C is s C oss C rss V GS = 0V, f = M Hz C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 0 0 V S, raintosource Voltage (V) V, G atetosource V oltage (V ) GS 20 6 2 8 4 I = 28 V S = 80V V S = 50V V S = 20V FOR TEST CIRCUIT 0 SEE FIGURE 3 0 40 80 20 60 200 Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. raintosource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage I S, Reverse rain Current () 00 0 T = 75 C J T = 25 C J V GS = 0V 0.4 0.8.2.6 2.0 V S, Sourcetorain Voltage (V) I, rain Current () 00 OPE RTION IN THIS RE LIMITE BY RS(on) µs 0 0µs ms ms T C = 25 C T J = 75 C Single Pulse 0 00 V S, raintosource Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage Fig 8. Maximum Safe Operating rea
IRF37 50 V S R I, rain Current () 40 30 20 Fig a. Switching Time Test Circuit V S 90% R G V GS V Pulse Width µs uty Factor 0. %.U.T. V 0 25 50 75 0 25 50 75 T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 0.50 0.20 P M 0. 0. t 0.05 t 2 0.02 0.0 SINGLE PULSE Notes: (THERML RESPONSE). uty factor = t / t 2 2. Peak T J = P M x Z thjc TC 0.0 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse uration (sec) Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase
IRF37 R G V S 20V tp Fig 2a. Unclamped Inductive Test Circuit tp L.U.T IS 0.0Ω 5V RIVER V (BR)SS V E S, Single Pulse valanche Energy (mj) 200 00 800 600 400 200 TOP BOTTOM V = 25V 0 25 50 75 0 25 50 75 Starting T J, Junction Temperature ( C) I 20 28 Fig 2c. Maximum valanche Energy Vs. rain Current I S Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF V Q GS Q G.U.T. V S V G V GS 3m Charge I G I Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit
IRF37 Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. evice Under Test V river Gate rive Period P.W. = P.W. Period V GS =V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Repplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 4. For NChannel HEXFETS
IRF37 Package Outline TO220B Outline imensions are shown in millimeters (inches) 2.87 (.3) 2.62 (.3) 0.5 4 (.4 5) 0.2 9 (.40 5) 3.78 (.4 9) 3.54 (.3 9) 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) 4 6.4 7 (.25 5) 6. 0 (.24 0) 2 3.5 (.0 4 5) M IN LE SSIGNMENTS G TE 2 R IN 3 SOURCE 4 R IN 4.09 (.555) 3.47 (.530) 4.0 6 (.6 0) 3.5 5 (.4 0).40 (.055) 3X.5 (.045) 2.54 (.0) 2X 3X 0.93 (.037) 0.69 (.027) 0.3 6 (.0 4) M B M 0.5 5 (.02 2) 3X 0.4 6 (.0 8) 2.92 (.5) 2.64 (.4) NOTES: IM E N S IO N IN G & TO L ER N C IN G P ER N S I Y 4.5 M, 98 2. 3 O U TL IN E C O N FO R M S TO JE E C OU T LIN E TO 2 20 B. 2 CONTR OLLING IMENSION : INCH 4 HETSIN K & LE M ESUREMENTS O NOT INCLUE BU RRS. Part Marking Information TO220B EXMPLE EXMPLE : THIS : THIS N IS N IRF IRF WITH WITH SSEMBLY SSEMBLY LOT LOT COE COE 9BM 9BM INTERNTIONL RECTIFIER RECTIFIER IRF IRF LOGO LOGO 9246 9246 9B 9B M M SSEMBLY SSEMBLY LOT LOT COE COE PRT PRT NUMBER NUMBER TE TE COE COE (YYWW) (YYWW) YY YY = YER = YER WW WW = WEEK = WEEK WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) 322 333 EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: 44 883 732020 IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Tel: (905) 475 897 IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: 49 672 96590 IR ITLY: Via Liguria 49, 07 Borgaro, Torino Tel: 39 45 0 IR FR EST: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Tel: 8 3 3983 0086 IR SOUTHEST SI: 35 Outram Road, #02 Tan Boon Liat Building, Singapore 036 Tel: 65 22 837 http://www.irf.com/ ata and specifications subject to change without notice. 7/97