W P V V W P FM FM M299JQ MPLMY P HM M MF Product ummary evice BV ) Max Q 2V Q2-2V Max = +25.99Ω @ V = 4.5V 45m Ω @ V = 2.5V 4m.8Ω @ V =.8V 33m 2.4Ω @ V =.5V 3m.9Ω @ V = -4.5V -3m 2.4Ω @ V = -2.5V -28m 3.4Ω @ V = -.8V -24m 5Ω @ V = -.5V escription and pplications -8m his MF is designed to meet the stringent requirements of utomotive applications. t is qualified to -Q supported by a PPP and is ideal for use in: General Purpose nterfacing witch Power Management Functions nalog witch Features and Benefits Low n-esistance Very Low Gate hreshold Voltage.V Max Low nput apacitance Fast witching peed ltra-mall urface Mount Package mm x mm Low Package Profile.45mm Maximum Package Height Protected Gate otally Lead-Free & Fully oh ompliant ote & 2) Halogen and ntimony Free. Green evice ote 3) Qualified to -Q tandards for High eliability PPP apable ote 4) Mechanical ata ase: 963 ase Material: Molded Plastic "Green" Molding ompound. L Flammability lassification ating 94V- Moisture ensitivity: Level per J--2 erminal onnections ndicator: ee iagram erminals: Finish Matte in nnealed over opper Leadframe. olderable per ML--22 Method 28 e3 Weight:.27 grams pproximate) 963 G 2 2 P G 2 op View op View chematic and ransistor iagram rdering nformation ote 5) otes: Part umber ase Packaging M299JQ-7 963 K/ape & eel M299JQ-7B 963 K/ape & eel. o purposely added lead. Fully irective 22/95/ oh) & 2/65/ oh 2) compliant. 2. ee http:///quality/lead_free.html for more information about iodes ncorporated s definitions of Halogen- and ntimony-free "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <9ppm bromine <9ppm chlorine <5ppm total Br + l) and <ppm antimony compounds. 4. utomotive products are -Q qualified and are PPP capable. efer to http:///product_compliance_definitions.html. 5. For packaging details go to our website at http:///products/packages.html. Marking nformation = Product ype Marking ode M299JQ ocument number: 3968 ev. - 2 of 9 eptember 26 iodes ncorporated
W P V V W P FM FM M299JQ Maximum atings Q -HL @ = +25 unless otherwise specified.) haracteristic ymbol Value nit rain-ource Voltage V 2 V Gate-ource Voltage V ±8 V ontinuous rain urrent ote 6) V = 4.5V teady = +25 45 tate m = +7 35 t<5s = +25 52 m = +7 4 ontinuous rain urrent ote 6) V =.8V teady = +25 33 tate m = +7 26 t<5s = +25 39 m = +7 3 Maximum ontinuous Body iode Forward urrent ote 6) 44 m Pulsed rain urrent ote 7) M 8 m Maximum atings Q2 P-HL @ = +25 unless otherwise specified.) haracteristic ymbol Value nit rain-ource Voltage V -2 V Gate-ource Voltage V ±8 V ontinuous rain urrent ote 6) V = -4.5V teady = +25-3 tate m = +7-24 t<5s = +25-36 m = +7-28 ontinuous rain urrent ote 6) V = -.8V teady = +25-24 tate m = +7-9 t<5s = +25-28 m = +7-22 Maximum ontinuous Body iode Forward urrent ote 6) -44 m Pulsed rain urrent ote 7) M -8 m hermal haracteristics @ = +25 unless otherwise specified.) haracteristic ymbol Value nit otal Power issipation ote 6) P 35 mw teady tate 36 /W hermal esistance Junction to mbient ote 6) t<5s θj 27 /W perating and torage emperature ange J G -55 to +5 otes: 6. evice mounted on F-4 PB with minimum recommended pad layout. 7. evice mounted on minimum recommended pad layout test board μs pulse duty cycle = %. M299JQ ocument number: 3968 ev. - 2 2 of 9 eptember 26 iodes ncorporated
W P V V W P FM FM M299JQ lectrical haracteristics Q -HL @ = +25 unless otherwise specified.) haracteristic ymbol Min yp Max nit est ondition FF H ote 8) rain-ource Breakdown Voltage BV 2 - - V V = V = 25μ Zero Gate Voltage rain urrent @ = +25 - - V = 6V V = V n - - 5 V = 5V V = V Gate-ource Leakage - - ± n V = ±5V V = V H ote 8) Gate hreshold Voltage V H).4 -. V V = V = 25μ -.6.99 V = 4.5V = m -.75 V = 2.5V = 5m tatic rain-ource n-esistance ) -.9.8 Ω V =.8V = 2m - 2.4 V =.5V = m - 2. - V = V = m Forward ransfer dmittance Y fs 8 85 - ms V = 5V = 25m iode Forward Voltage V -.6. V V = V = m YM H ote 9) nput apacitance iss - 27.6 - pf V = 5V V = V utput apacitance oss - 4. - pf f =.MHz everse ransfer apacitance rss - 2.8 - pf Gate esistance g - 3 - Ω V = V V = V f =.MHz otal Gate harge Q g -.5 - n V = 4.5V V = V Gate-ource harge Q gs -.7 - n = 25m Gate-rain harge Q gd -.7 - n urn-n elay ime t ) - 4. - ns V = 5V V = 4.5V urn-n ise ime t - 3.3 - ns L = 47Ω g = 2Ω urn-ff elay ime t FF) - 9. - ns = 2m urn-ff Fall ime t F - 6.4 - ns lectrical haracteristics Q2 P-HL @ = +25 unless otherwise specified.) haracteristic ymbol Min yp Max nit est ondition FF H ote 8) rain-ource Breakdown Voltage BV -2 - - V V = V = -25μ Zero Gate Voltage rain urrent @ = +25 - - V = -6V V = V n - - 5 V = -5V V = V Gate-ource Leakage - - ± n V = ±5V V = V H ote 8) Gate hreshold Voltage V H) -.4 - -. V V = V = -25μ -.9 V = -4.5V = -m -.5 2.4 V = -2.5V = -5m tatic rain-ource n-esistance ) - 2. 3.4 Ω V = -.8V = -2m - 2.5 5 V = -.5V = -m - 4. - V = -V = -m Forward ransfer dmittance Y fs 45 - ms V = -5V = -25m iode Forward Voltage V - -.6 -. V V = V = -m YM H ote 9) nput apacitance iss - 28.7 - pf V = -5V V = V utput apacitance oss - 4.2 - pf f =.MHz everse ransfer apacitance rss - 2.9 - pf Gate esistance g - 399 - Ω V = V V = V f =.MHz otal Gate harge Q g -.4 - n V = -4.5V V =- V Gate-ource harge Q gs -.8 - n = -25m Gate-rain harge Q gd -.6 - n urn-n elay ime t ) - 5.8 - ns urn-n ise ime t - 5.7 - ns urn-ff elay ime t FF) - 3. - ns urn-ff Fall ime t F - 6.4 - ns otes: 8. hort duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. ot subject to product testing. V = -5V V = -4.5V g = 2Ω = -2m M299JQ ocument number: 3968 ev. - 2 3 of 9 eptember 26 iodes ncorporated
MLZ) ) - - ) ) - - ) W P V V W P FM FM ) ) M299JQ ypical haracteristics - -HL.8 V = 4.5V V =4.V.8 = -55.6.4.2 V = 3.V V = 2.5V V = 2.V V =.5V ).6.4.2 = 25 = 85 = 25 = 5 V = V.5.5 2 2.5 3 3.5 4 V - VLG ) Fig. ypical utput haracteristics..8.6.4.2 V =.8V V = 2.5V V = 4.5V.2.4.6.8 - ) Fig. 3 ypical n-esistance vs. rain urrent and Gate Voltage ) - - ) - - ) ).5.5 2 2.5 3 V G- VLG V) Fig. 2 ypical ransfer haracteristics..8.6.4.2 V = 4.5V = 5 = 25 = 85 = 25 = -55 V = 5.V.2.4.6.8. ) Fig. 4 ypical n-esistance vs. rain urrent and emperature ) - - - ) d ) e z a l i m o r -.6.4..8.6-5 -25 25 5 75 25 5 J J MP ) Fig. 5 n-esistance Variation with emperature M299JQ ocument number: 3968 ev. - 2 = 3m = 5m 4 of 9..8.6.4.2 = 5m = 3m -5-25 25 5 75 25 5 J J MP ) Fig. 6 n-esistance Variation with emperature eptember 26 iodes ncorporated
V G- VLG V) ) J P pf) W P V V W P FM FM V H) G HHL VLG V) ) M299JQ ypical haracteristics - -HL ont.)...8.8 = m.6 = 25 癈.6 = 25 礎.4.4.2.2-5 -25 25 5 75 25 5 J J MP ) Fig. 7 Gate hreshold Variation vs. mbient emperature 5.2.4.6.8. V - VLG V) Fig. 8 iodes Forward Voltage vs. urrent f = MHz 4 3 2 oss iss ) n G K L LKG n) = 5 = 25 = 85 = 25 rss 5 5 2 V - VLG V) Fig. 9 ypical Junction apacitance 2 4 6 8 2 4 6 8 2 V - VLG V) Fig. ypical rain-ource Leakage urrent vs. Voltage 8 ) Limited 6 4 2 ).. P W = s P W = s P = ms W P = ms W P = ms W P = µs W P = µs W V = V JMX) = 5 = 25 ingle Pulse.2.4.6.8 Q GQ g - n) n) Fig. Gate harge haracteristics M299JQ ocument number: 3968 ev. - 2 5 of 9.. V - VLG V) Fig. 2 afe peration rea eptember 26 iodes ncorporated
MLZ) ) - - ) ) - - ) W P V V W P FM FM - ) - ) ypical haracteristics - P-HL.8.8 M299JQ V = -5.V = 85 = 5.6.4.2 ) -.6.4.2 = -55 = 25 = 25.5.5 2 2.5 3 3.5 4 -V - VLG V) Fig. 3 ypical utput haracteristics 3.2 2.8 2.4 2..6.8.4 V = -.8V V = -4.5V.2.4.6.8 - - ) Fig. 5 ypical n-esistance vs. rain urrent and Gate Voltage ) - - ) - - ) ).5.5 2 2.5 3 3.5 4 -V G- VLG V) Fig. 4 ypical ransfer haracteristics 2..6.8.4 V = -4.5V = 25 = 5 = 25 = 85 = -55.2.4.6.8 - ) Fig. 6 ypical n-esistance vs. rain urrent and emperature ) - - - ) d ) l i a z e m r o -.7.5.3..9.7.5-5 -25 25 5 75 25 5 J MP ) J Fig. 7 n-esistance Variation with emperature M299JQ ocument number: 3968 ev. - 2 V = -2.5V = -5m V = -4.5V = -3m 6 of 9 2.4 2..6.8.4 V = -2.5V = -5m V = -4.5V = -3m -5-25 25 5 75 25 5 J J MP ) Fig. 8 n-esistance Variation with emperature eptember 26 iodes ncorporated
-V G VLG V) - ) J P pf) W P V V W P FM FM -V H) G HHL VLG V) - ) M299JQ ypical haracteristics - P-HL ont.).8..8.6.6 = -m.4 = 25 癈.4.2 = -25 礎.2-5 -25 25 5 75 25 5 J J MP ) Fig. 9 Gate hreshold Variation vs. mbient emperature.4.6.8. - V - VLG V) Fig. 2 iodes Forward Voltage vs. urrent 5 f = MHz = 5 4 3 2 iss oss ) n G K L - LKG n) - = 25 = 85 = -25 rss 2 4 6 8 - V - VLG V) Fig. 2 ypical Junction apacitance 2 4 6 8 2 4 6 8 2 -V - VLG V) Fig. 22 ypical Leakage urrent vs. rain-ource Voltage 5 4 3 2 2 4 6 8 2 4 6 8 Q Gg L G HG n) Fig. 23 Gate harge haracteristics M299JQ ocument number: 3968 ev. - 2 V = V = -4.5 ).. 7 of 9 ) Limited P W = JMX) = 5 = 25 ingle Pulse P = s W P =ms W P =µs W P W =s P W =ms P W = ms P =µs W.. - V - VLG V) Fig. 24 afe peration rea eptember 26 iodes ncorporated
W P V V W P FM FM t) rt) HML M299JQ =.7 =.5 =.3. =. =.9 =.5 =.2. =. =.5 J t) = rt)* J J = 356/W /W = ingle Pulse uty ycle = t/t2....... t PL M sec) Fig. 25 ransient hermal esistance Package utline imensions Please see http:///package-outlines.html for the latest version. 963 e L e b c 963 im Min Max yp.4.5.45..5 -- b..2.5 c.2.8.5.95.5..95.5..75.85.8 e -- --.35 e -- --.7 L.5.5. ll imensions in mm eating plane M299JQ ocument number: 3968 ev. - 2 8 of 9 eptember 26 iodes ncorporated
W P V V W P FM FM M299JQ uggested Pad Layout Please see http:///package-outlines.html for the latest version. 963 Y imensions Value in mm).35 X.2 Y.2 Y. Y X MP P MK WY F Y K XP MPL WH H M LG B LM H MPL W F MHBLY F F PL PP H QVL H LW F Y J). iodes ncorporated and its subsidiaries reserve the right to make modifications enhancements improvements corrections or other changes without further notice to this document and any product described herein. iodes ncorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes ncorporated convey any license under its patent or trademark rights nor the rights of others. ny ustomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes ncorporated and all the companies whose products are represented on iodes ncorporated website harmless against all damages. iodes ncorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. hould ustomers purchase or use iodes ncorporated products for any unintended or unauthorized application ustomers shall indemnify and hold iodes ncorporated and its representatives harmless against all claims damages expenses and attorney fees arising out of directly or indirectly any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more nited tates international or foreign patents pending. Product names and markings noted herein may also be covered by one or more nited tates international or foreign trademarks. his document is written in nglish but may be translated into multiple languages for reference. nly the nglish version of this document is the final and determinative format released by iodes ncorporated. LF PP iodes ncorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the hief xecutive fficer of iodes ncorporated. s used herein:. Life support devices or systems are devices or systems which:. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems and acknowledge and agree that they are solely responsible for all legal regulatory and safety-related requirements concerning their products and any use of iodes ncorporated products in such safety-critical life support devices or systems notwithstanding any devices- or systems-related information or support that may be provided by iodes ncorporated. Further ustomers must fully indemnify iodes ncorporated and its representatives against any damages arising out of the use of iodes ncorporated products in such safety-critical life support devices or systems. opyright 26 iodes ncorporated M299JQ ocument number: 3968 ev. - 2 9 of 9 eptember 26 iodes ncorporated