Green. Part Number Case Packaging MSB10M-13 MSB 3,000/Tape & Reel
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1 DVD W PDT FMT Green.0 SF MT GLSS PSSVTD BDG TF Product Summary (@T = +25 ) V M (V) () V F (V) (µ), Features and Benefits Glass Passivated Die onstruction ompact, Thin Profile Package Design eliable obust onstruction deal for SMT Manufacturing Lead Free Finish; ohs ompliant (otes & 2) Halogen and ntimony Free. Green Device (ote 3) Description and pplications Mechanical Data Suitable for to D bridge full-wave rectification for SMPS, LD lighting, adapters, battery chargers, home appliances, office equipment and telecommunication applications. ase: ase Material: Molded Plastic; L Flammability lassification ating 94V-0 Moisture Sensitivity: Level per J-STD-020 Terminals: Finish Matte Tin nnealed over opper Leadframe; Solderable per ML-STD-202, Method 208 Polarity: s Marked on Body Weight: 0.09 grams (pproximate) Top View Pin Diagram nternal Schematic rdering nformation (ote 4) Part umber ase Packaging -3 3,000/Tape & eel otes:. Directive 2002/95/ (ohs) & 20/65/ (ohs 2) compliant. ll applicable ohs exemptions applied. 2. See for more information about Diodes ncorporated s definitions of Halogen- and ntimony-free, "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<500ppm total Br + l) and <00ppm antimony compounds. 4. For packaging details, go to our website at Marking nformation Pin _ + M _ YWW ~ ~ M = Product Type Marking ode = Manufacturers ode Marking YWW = Date ode Marking Y = Last Digit of Year (ex: 6 = 206) WW = Week ode (0 to 53) Document number: DS37032 ev. 3-2 of 5 pril 206
2 DVD W PDT FMT Maximum atings (@T = +25, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Peak epetitive everse Voltage Working Peak everse Voltage D Blocking Voltage haracteristic Symbol Value nit V M V WM V MS everse Voltage V (MS) 700 V verage ectified utput T = on-epetitive Peak Forward Surge urrent, 8.3ms Single Half Sine-Wave Superimposed on ated Load,000 FSM 35 V Thermal haracteristics haracteristic Symbol Value nit Typical Thermal esistance, Junction to mbient (ote 5) θj 80 /W Typical Thermal esistance, Junction to ase θj 2 /W Typical Thermal esistance, Junction to Lead θjl 40 /W perating and Storage Temperature ange T J, T STG -55 to +50 lectrical haracteristics (@T = +25, unless otherwise specified.) haracteristic Symbol Min Typ Max nit Test ondition everse Breakdown Voltage (ote 6) V (B),000 V = 5μ Forward Voltage Leakage urrent (ote 6) V F V μ F = 0.5 F = V =,000V, T = +25 V =,000V, T = +25 Total apacitance T pf V = 4V, f =.0MHz otes: 5. Device mounted on glass-epoxy substrate with oz 20mm x 20mm u pad per pin. 6. Short duration pulse test used to minimize self-heating effect. Document number: DS37032 ev of 5 pril 206
3 T, TTL PT (pf), STTS VS T ( µ ) FSM, PK FWD SG T () DVD W PDT FMT F, VG FWD T () F, STTS FWD T () ) ( T 0.8 D 0.6 W F 0.4 G V 0.2, F 0 00 ote T, S TMPT ( ) Figure Forward urrent Derating urve ) T ( D W F S T 0. T S, F 35 T = 0 T = 25 T = 50 T = 25 T = 75 T = V F, STTS FWD VLTG (V) Figure 2 Typical Forward haracteristics 0 T = 50 T = 25 T = 0 T = T = 50 T = V, STTS VS VLTG (V) Figure 3 Typical everse haracteristics 5 Pulse width 8.3ms Single Half Sine-Wave 0 0 MB F YLS T 60 H Z Figure 4 Forward Surge urrent Derating urve 0 f=mhz 0 V D VS VLTG (V), Figure 5 Total apacitance vs. everse Voltage Document number: DS37032 ev of 5 pril 206
4 DVD W PDT FMT Package utline Dimensions Please see for the latest version. D Seating Plane L b e x y Pin# 5 c Dim Min Max Typ b c D e L x y ll Dimensions in mm Suggested Pad Layout Please see for the latest version. Y Y Value Dimensions (in mm) 3.55 X 0.90 Y.05 Y 6. X Document number: DS37032 ev of 5 pril 206
5 DVD W PDT FMT MPTT T DDS PTD MKS WTY F Y KD, XPSS MPLD, WTH GDS T THS DMT, LDG, BT T LMTD T, TH MPLD WTS F MHTBLTY D FTSS F PTL PPS (D TH QVLTS D TH LWS F Y JSDT). Diodes ncorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes ncorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes ncorporated convey any license under its patent or trademark rights, nor the rights of others. ny ustomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes ncorporated and all the companies whose products are represented on Diodes ncorporated website, harmless against all damages. Diodes ncorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should ustomers purchase or use Diodes ncorporated products for any unintended or unauthorized application, ustomers shall indemnify and hold Diodes ncorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more nited States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more nited States, international or foreign trademarks. This document is written in nglish but may be translated into multiple languages for reference. nly the nglish version of this document is the final and determinative format released by Diodes ncorporated. LF SPPT Diodes ncorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the hief xecutive fficer of Diodes ncorporated. s used herein:. Life support devices or systems are devices or systems which:. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes ncorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes ncorporated. Further, ustomers must fully indemnify Diodes ncorporated and its representatives against any damages arising out of the use of Diodes ncorporated products in such safety-critical, life support devices or systems. opyright 206, Diodes ncorporated Document number: DS37032 ev of 5 pril 206
Green. Top View Pin Diagram Internal Schematic. Part Number Case Packaging MSB12M-13 MSB 3,000/Tape & Reel
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Green 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary B520CE/B530CE/B540CE V RRM (V) I O (A) V F Max (V) I R Max (ma) 20 5.0 0.55 0.2 30 5.0 0.55 0.2 40 5.0 0.55 0.2 Features and Benefits
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Green 3A Trench SBR TRENCH SUPER BARRIER RECTIFIER Product Summary V V RRM (V) I O (A) F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 60 3 0.53 0.5 Description and Applications The device is a 3A 60V single
More informationGreen SOD123F. Date Code Key Year Code C D E F G H I J
DVNCED INFORMTION Green.0 SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (µ),000.3 Description and pplications The is a rectifier packaged in the
More informationADVANCED INFORMATION
1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary V RRM (V) I O (A) V F(MAX) (V) @ +25 C I R(MAX) (µa) @ +25 C 80 1 0.80 5 Description and Applications Features and Benefits Low Forward Voltage
More informationDevice Symbol. Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DXT651Q-13 Automotive KN ,500
6 P W U PW Description his ipolar Junction ransistor (J) is designed to meet the stringent requirements of automotive applications. Features > 6 = 3 High ontinuous ollector urrent M up to 6 Peak Pulse
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Green 3.0A SURFACE MOUNT FAST GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V FM (V) I R (μa) 00,800,600, 400,200,0 3.0.3 5 Description and Applications Suitable for
More informationGreen SMC. Top View Bottom View. Part Number Compliance Case Packaging B5X0CQ-13-F Automotive SMC 3,000/Tape & Reel
Green 5. SURFCE MOUNT SCHOTTKY BRRIER RECTIFIER Product Summary B52CQ/B53CQ/B54CQ V RRM (V) I O () V F Max (V) I R Max (m) 2/3/4 5..55.5 B55CQ/B56CQ V RRM (V) I O () V F Max (V) I R Max (m) 5/6 5..7.5
More informationGreen. SOD123F (Standard) Top View. Part Number Qualification Case Packaging US1GWF-7 AEC-Q101 SOD123F (Standard) 3,000/Tape & Reel
Green.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 400.25 Description The is a rectifier packaged in the SOD23F (Standard) package and
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Green 3A TRENCH SCHOTTKY BARRIER RECTIFIER SMA Product Summary (@ T A = +25 C ) V RRM (V) I O (A) V F(MAX) (mv) I R(MAX) (µa) 45 3 480 280 Features and Benefits Low Leakage Current Soft, Fast Switching
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.2 SUFCE MOUT SCHOTTKY BIE DIODE Features Mechanical Data Low Forward Voltage Drop Fast Switching Ultra-Small Leadless Surface Mount Package P Junction Guard ing for Transient and ESD Protection Totally
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3V NPN HIGH VOLTAGE TRANSISTOR IN Features BV EO > 3V I = 5mA High ollector urrent 2W Power Dissipation Low Saturation Voltage V E(sat) < 5mV @ 2mA omplementary PNP Type: DZTA92 Totally Lead-Free & Fully
More informationCase Material: Molded Plastic, Green Molding Compound; Low Leakage Current. UL Flammability Classification Rating 94V-0 Low Capacitance
DVNCED INFORMTION SURFCE MOUNT SWITCHING DIODE RRY Features Mechanical Data Fast Switching Speed Case: High Reverse Breakdown Voltage Case Material: Molded Plastic, Green Molding Compound; Low Leakage
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Product Summary B140Q/BQ V RRM (V) I O (A) V Max (V) I R Max (ma) T A = +25 T A = +25 40 1.0 0.5 0.5 B150Q, B160Q V RRM (V) I O (A) V Max (V) I R Max (ma) T A = +25 T A = +25 50/60 1.0 0.7 0.5 Description
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0.5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary V F(MAX) (V) I R(MAX) (µa) V RRM (V) I O (A) @ +25 C @ +25 C 80 0.5 0.80 5 Description and Applications This is a single rectifier packaged
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Green 20 TRENCH SCHOTTKY RECTIFIER Product Summary (Per Leg) V V RRM (V) I O () F Max (V) I R Max (µ) @ +25 C @ +25 C 0 0.80 0 Description and pplications Features Low Forward Voltage Drop Excellent High
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Green 3.W SURFACE MOUNT POWER ENER DIODE Features Mechanical Data 3.W Power Dissipation Case: SMB Ideally Suited for Automated Assembly Case Material: Molded Plastic. UL Flammability Classification 3.3V
More informationGreen. Part Number Qualification Case Packaging P4SMAJXXADF-13 Commercial D-FLAT 10,000/Tape & Reel
Green 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data Packaged in the Low Profile D-FLAT to Optimize Board Space Case: D-FLAT Glass Passivated Die Construction Excellent Clamping
More informationTop View Device Symbol Top View Pin-Out
YWW NEW PRODUT 500V PNP HIGH PERFORMANE TRANSISTOR IN Features BV EO > -500V I = -150mA High ontinuous urrent I M = -500mA Peak Pulse urrent Totally Lead-Free & Fully RoHS ompliant (Notes 1 & 2) Halogen
More informationFeatures and Benefits. Product Summary. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information D28V0H1U2P5Q
Green 800W SURFCE MOUNT TRNSIENT VOLTGE SUPPRESSOR Product Summary V RWM V BR Min I PPM Max 28V 3V 4 Features and Benefits Uni-directional polarity Low profile thermally efficient package Compliant with
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60V NPN MEDIUM POWER TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature BV EO > 60V = 1A
More informationGreen. Part Number Compliance Case Packaging P6SMAJXXADF-13 Commercial D-FLAT 10,000/Tape & Reel
DVND INFOMION NW ODU Green 600W SUF MOUN NSIN VOLG SUSSO Features Mechanical Data ackaged in the Low rofile D-FL ackage to Optimize Board Space Glass assivated Die onstruction xcellent lamping apability
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45V NPN SMALL SIGNAL TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV EO > 45V I =.5A
More information-2.7A. Pin Out - Top View
6V P-HANNEL ENHANEMENT MODE MOSFET Product Summary Features and Benefits ADVANE INFORMATION NEW PRODUT V (BR)DSS -6V Description R DS(on) I D T A = +25 5mΩ @ V GS = -V -3A 85mΩ @ V GS = -4.5V -2.7A This
More informationSBR5E45P5. Features and Benefits. Product Summary A = +25 C) Description and Applications. Mechanical Data. Ordering Information (Note 4)
Green 5A SBR SUPER BARRIER RECTIFIER Product Summary (@T A = +25 C) Features and Benefits ADVANCED NEW NEW INFORMATION V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) 45 5 0.6 0.28 Description and Applications
More informationFeatures DO-41 DO-15 DO-214AC
SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 60 2 0.68 0.5 Description The is a low voltage dual Schottky rectifier suited for switch mode
More informationFeatures DO-15 DO-214AC SOD-123
SCHOTTKY BARRIER RECTIFIERS Product Summary Features V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 2 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationGreen. Features DO-214AC
Green SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 3 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationTop View BAT54T BAT54AT BAT54CT BAT54ST
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Mechanical Data Ultra-Small Surface Mount Package Low Forward Voltage Drop Fast Switching PN Junction Guard Ring for Transient and ESD Protection Totally Lead-Free
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YM D516Q 6 W () PP UF MU I Description Mechanical Data his ipolar Junction ransistor (J) is designed to meet the stringent requirements of utomotive pplications. Features > -6 I = -1 ontinuous ollector
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Green 6V 7 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 6V R DS(ON) max 23mΩ @ V GS = V 28mΩ @ V GS = 4.V Description and Applications I D max T C = +2 C A 4A This MOSFET is designed to meet
More informationPart Number Case Packaging DMN2990UFO-7B X2-DFN k/Tape & Reel
20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BV DSS 20V R DS(ON) max I D max T A = +25 C 0.99Ω @ V GS = 4.5V 750mA.2Ω @ V GS = 2.5V 680mA.8Ω @ V GS =.8V 555mA 2.4Ω @ V GS
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NAB YM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary R DS(ON) max I D T A = +25 C 2V.55Ω @ V GS = 4.5V 54mA BV DSS Description and Applications This MOSFET is designed to minimize the on-state
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Green LOW VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 5 0.55 0.1 Description Low voltage Schottky rectifier suited for switch mode
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YYWW Green 3V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type D) Product Summary Device BV DSS R DS(ON) Max Q 3V 4.3m @ V GS = 8V, I D = 4A Q2 3V 4.3m @ V GS = 8V, I D = 4A Description
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Green V +75 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary R DS(ON) I D T C = +25 C V 5mΩ @V GS = V 4A BV DSS Description This new generation MOSFET features low on-resistance and fast switching,
More informationTop View. Part Number Case Packaging DMTH4014LPDQ-13 PowerDI (Type C) 2,500/Tape & Reel
4V 75 C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 4V R DS(ON) max I D max T C = +25 C 5mΩ @ V GS = V 43.6A 25mΩ @ V GS = 4.5V 33A Description and Applications This MOSFET is designed
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6V 75 C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 6V R DS(ON) max I D max T C = +25 C mω @ V GS = V 47.6A 6mΩ @ V GS = 4.5V 39.5A Description and Applications This MOSFET is designed
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NOT RECOMMENDED FOR NEW DESIGN USE DMN6D8L N7X N-CHNNEL ENHNCEMENT MODE MOSFET Product Summary Features and Benefits V (BR)DSS R DS(ON) max I D max T = + C 6V 6Ω @ V = V m Description This MOSFET has been
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YM 3V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BV DSS 3V R DS(ON) Max 9mΩ @ 25mΩ @ V GS = 2.5V 4mΩ @ V GS =.8V 2mΩ @ V GS =.5V I D Max T C = +25 C 5A 4A A 6A.6mm Profile Ideal for Low
More informationTop View. Part Number Compliance Case Packaging DMN6066SSD-13 Commercial SO-8 2,500/Tape & Reel DMN6066SSDQ-13 Automotive SO-8 2,500/Tape & Reel
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V (BR)DSS 60V R DS(on) T A = +25 C 66mΩ @ = V 4.4A 97mΩ @ = 4.5V 3.6A Low on-resistance Fast switching speed 0% Unclamped
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N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V (BR)DSS 2V Description R DS(ON) max 25mΩ @ V GS = 4.5V I D max T A = +25 C 9A 29mΩ @ V GS = 2.5V 5.5A 37mΩ @ V GS = 1.8V 4.8A This MOSFET is
More informationFeatures TO-220F-3 TO (2) TO-263-2
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
More informationGreen. Features TO252 (DPAK) Part Number Case Packaging DMPH6023SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel
V FM reen MPH623K3Q 6V 75 P-HL HM M MF Product ummary BV -6V ) Max Max = +25 33mΩ @ V = -V -35 4mΩ @ V = -4.5V -32 escription and pplications his MF has been designed to meet the stringent requirements
More informationPackage Pin Out Configuration. Part Number Compliance Marking Reel Size (inch) Tape Width (mm) Quantity per Reel UMC4NQ-7 Automotive NP ,000
YM DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features Ultra-Small Surface Mount Package Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Totally Lead-Free
More informationDMN3032LFDB. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 4) Marking Information
YM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 3V R DS(ON) Max I D Max T A = +5 C 3mΩ @ V GS = V 6.A 4mΩ @ V GS = 4.5V 5.A Description and Applications This MOSFET is designed to minimize
More informationDSS5240T. Features. Mechanical Data NEW PRODUCT. Application. Ordering Information (Note 4 & 5) Marking Information
YM NEW PRODUT 40V PNP LOW STURTION TRNSISTOR IN SOT23 Features BV EO > -40V I = -2 high ontinuous ollector urrent I M = -3 Peak Pulse urrent Low Saturation Voltage -225mV Max @ I = -. R E(ST) = 90mΩ at
More information-180mA SOT963 ESD PROTECTED S 1. Top View
W P V V W P FM FM M299JQ MPLMY P HM M MF Product ummary evice BV ) Max Q 2V Q2-2V Max = +25.99Ω @ V = 4.5V 45m Ω @ V = 2.5V 4m.8Ω @ V =.8V 33m 2.4Ω @ V =.5V 3m.9Ω @ V = -4.5V -3m 2.4Ω @ V = -2.5V -28m
More informationADC114YUQ. Mechanical Data. Features. Ordering Information (Notes 4 & 5) Marking Information NXX 1Y7 YM NXX YM
NXX YM NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Built-In Biasing Resistors Totally Lead-Free & Fully RoHS Compliant (Notes &
More informationDMNH6021SPDQ. Product Summary. Features and Benefits ADVANCE INFORMATION ADVANCED INFORMATION. Description and Applications.
DVNCE INFORMTION DVNCED INFORMTION Product Summary V (BR)DSS 6V R DS(ON) Max 2mΩ @ V = V 4mΩ @ V = 4.V I D Max T C = +2 C 32 2 6V 7 C DUL N-CHNNEL ENHNCEMENT MODE MOSFET PowerDI Features and Benefits Rated
More informationPart Number Case Packaging SDM05U20CSP-7 X3-WLB ,000/Reel
ADVANCED 0.5A SCHOTTKY BARRIER RECTIFER CHI SCALE ACKAGE roduct Summary V RRM (V) I O (A) V F Max (V) I R Max (µa) 20 0.5 0.43 55 Description The is a 20-Volt 0.5A Schottky barrier rectifier that is optimized
More informationFeatures. Bottom View. Top View Bottom View
YM ADVANCED INFORMATION 2V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 2V Description R DS(ON) max I D max T A = +25 C 25mΩ @ V GS = 4.5V 6.5A 31mΩ @ V GS = 2.5V 5.9A 6mΩ @ V GS = 1.8V 4.5A
More informationDCX(xxxx)U. Features. Mechanical Data. Ordering Information (Note 3 & 4) SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR.
DX(xxxx)U SMALL SIGNAL OMPLEMENTARY PRE-BIASED DUAL TRANSISTOR Features Epitaxial Planar Die onstruction Built-In Biasing Resistors Surface Mount Package Suited for Automated Assembly Totally Lead-Free
More informationFeatures. TO-220F-3 (Option 1) TO (2) TO TO (1)
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary Features V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 200 2x5 0.95 0.5 Description High voltage dual Schottky rectifier suited for
More informationFeatures -4.1A. Part Number Case Packaging DMC3025LSD-13 SO-8 2,500/Tape & Reel
DM325LSD 3V OMPLEMENTRY ENHNEMENT MODE MOSFET DVNED INFORMTION Product Summary Device V (BR)DSS R DS(ON) max Package N-hannel 3V P-hannel -3V Description MX 2mΩ @ V GS = 1V 8.5 32mΩ @ V GS = 4.5V 7. SO-8
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2005S8-13 DGD
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The is a mid-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques
More informationFeatures. Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel DGD2103MS8-13 DGD2103M ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description The is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2304S8-13 DGD ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description Features The is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing
More informationGreen. Features. I D T C = +25 C (Note 9) 100A 100A. Top View Pin Configuration
Product Summary Green 4V N-CHANNEL ENHANCEMENT MOE MOSFET POWERI Features % Unclamped Inductive Switching Ensures More Reliable BV SS 4V R S(ON) max.8mω @ V GS = V 3.mΩ @ V GS = 4.5V I T C = +5 C (Note
More informationFeatures. Top View Pin-Out
40 1A GATE DRIE SOT363 Description is a high-speed, non-inverting single gate driver for switching MOSFETs. It can transfer up to 1A peak source/sink current into the gate for effective charging and discharging
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DGD2101MS8-13 DGD ,500
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage
More informationFeatures. Typical Configuration ZXGD3113W6. Top View Pin-Out
SYNCHRONOUS MOSFET CONTROLLER IN Description The is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a differential amplifier detector stage and high current
More informationK3N MMBT3906. Features. Mechanical Data. Ordering Information (Notes 4 & 5) Marking Information 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 MMBT3906
YM 40V PNP SMLL SIGNL TRNSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Ideal for Medium Power mplification and Switching Complementary NPN Type: MMBT3904 Totally Lead-Free
More informationDevice Symbol. Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BC846ASQ-7-F Automotive KNS 7 8 3,000
KNS YM 65V DUAL NPN SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV CEO
More informationDGD Ordering Information (Note 4) Marking Information YYWW DGD05473 HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN
HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN3030-10 Description The is a high-frequency gate driver capable of driving N- channel MOSFETs. The floating high-side driver is rated up to 50V.
More informationFeatures. Top View. Part Number Case Packaging DMN3008SCP10-7 X4-DSN /Tape & Reel
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary BV SSS R SS(ON) MAX I S T A = +25 C 30V 7.8mΩ @ V GS =V 14.6A Description This new generation MOSFET has been designed to minimize the on-state resistance
More informationTop View. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4034SSS-13 N4034SS ,500
40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS 40V R DS(on) T A = 25 C 34mΩ @ = V 7.2A 59mΩ @ = 4.5V 5.5A Description and Applications This MOSFET has been designed to minimize the on-state
More informationG2 D1 DMC1028UFDB. Features. Product Summary. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information
YM Product Summary Device BV DSS R DS(ON) max Q N-Channel Q2 P-Channel Description 2V -2V I D max T A = +25 C 25mΩ @ V = 4.5V.A 3mΩ @ V = 3.3V 5.5A 32mΩ @ V = 2.5V 5.3A 8mΩ @ V = -4.5V -3.4A 9mΩ @ V =
More informationFeatures -3.1A -2.0A. Pin Configuration
DMC238LVT COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Features Device V (BR)DSS R DS(ON) Q 2V Q2-2V Description 35mΩ @ V GS = 4.5V 4.5 56mΩ @ V GS =.8V 3.5 74mΩ @ V GS = -4.5V 68mΩ @ V GS =
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD21844S14-13 DGD ,500
HALF- BRIDGE GATE DRIVER IN SO-14 Description The is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques
More informationDGD Features. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information YYWW DGD05463
HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME IN W-DFN3030-10 (Type TH) Description The is a high-frequency half-bridge gate driver capable of driving N-channel MOSFETs in a half-bridge
More informationFeatures. Bottom View Equivalent Circuit. Top View Pin Out Configuration. Part Number Case Packaging DMN80H2D0SCTI ITO220AB (Type TH) 50 pieces/tube
N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS R DS(ON) Package 8V Description.Ω@V GS = V ITOAB (Type TH) I D T C = +5 C This new generation MOSFET features low on-resistance and fast switching,
More informationTop View. Part Number Case Packaging DMNH6042SPD-13 PowerDI (Type C) 2,500/Tape & Reel
FM FM 6 +75 -H HM M MF Product ummary B 6 ) max 5mΩ @ = 65mΩ @ = 4.5 max = +5 4 Features and Benefits ated to +75 deal for High mbient emperature nvironments % nclamped nductive witching ensures more reliable
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N-CHNNEL ENHNCEMENT MOE MOSFET Product Summary Features and Benefits VNCE INFORMTION V (BR)SS 2V R S(ON) Max I Max T = +25 C 25mΩ @ V = 4.5V 6.8 29mΩ @ V = 2.5V 5.5 escription and pplications This MOSFET
More informationFeatures. Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DM SO-7 Standard BF ,000/Tape & Reel
2-CHANNEL LOW CAPACITANCE ESD PROTECTION ARRAY Product Summary V F (Typ) V P (Typ) C OUT (Typ) 0.8V 5V 1.5pF Description is a high-performance device suitable for protecting two high-speed channels. This
More informationFeatures DNC GND GND GND GATE GATE. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3108N8TC ZXGD ,500
V ACTIVE OR'ING MOSFET CONTROLLER IN SO8 Description is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
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YM AVANCE INFORMATION 3V N-CHANNEL ENHANCEMENT MOE MOSFET Product Summary V (BR)SS 3V escription R S(ON) max I max T A = +25 C 17mΩ @ V GS = 1V 8.4A 28mΩ @ V GS = 4.5V 6.8A This new generation MOSFET is
More informationGreen. Pin1. Top View Pin Configuration. Part Number Case Packaging DMTH3004LPS-13 POWERDI ,500/Tape & Reel
NEW PROUCT AVANCE INFORMATION Product Summary BV SS 3V R S(ON) Max 3.8mΩ @ V GS = V 6mΩ @ V GS = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOSFET is designed to minimize the on-state
More informationFeatures SO-7. Typical Configuration for Low-Side -ve Supply Rail DRAIN. Top View
V ACTIVE OR'ING MOSFET CONTROLLER IN SO7 Description The is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD65T50S1PT DGTD65T50S1 450 per Box in Tubes (Note 5)
650V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance. Features High-Speed Switching
More informationI D T A = 25 C -2.8A -2.3A. Part Number Case Packaging DMG6602SVT-7 TSOT / Tape & Reel
DMGSVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V (BR)DSS R DS(on) Q 3V Q -3V I D mω @ V GS = V 3.A mω @ V GS =.5V.7A 95mΩ @ V GS = -V mω @ V GS = -.5V Description
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PART OBSOLETE - USE N7 V ACTIVE OR-ING MOSFET CONTROLLER IN SO8 Description is a V Active OR-ing MOSFET controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces
More informationApplications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000
YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD120T25S1PT DGTD120T25S1 450 per Box in Tubes (Note 5)
1200V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides low V CE(sat), excellent quality and high-switching performance. Features High
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3104N8TC ZXGD ,500
SYNCHRONOUS MOSFET CONTROLLER IN SO8 Description The ZXGD3104 is intended to drive MOSFETs configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and
More information74LVC08A. Description. Pin Assignments. Features. Applications QUADRUPLE 2-INPUT AND GATES 74LVC08A. (Top View) Vcc 4B 4A 4Y 3B 3A 3Y
QUADRUPLE 2-INPUT AND GATES Description Pin Assignments The provides four independent 2-input AND gates. The device is designed for operation with a power supply range of 1.65V to 5.5V. The inputs are
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