Features -4.1A. Part Number Case Packaging DMC3025LSD-13 SO-8 2,500/Tape & Reel
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1 DM325LSD 3V OMPLEMENTRY ENHNEMENT MODE MOSFET DVNED INFORMTION Product Summary Device V (BR)DSS R DS(ON) max Package N-hannel 3V P-hannel -3V Description MX V GS = 1V 8.5 V GS = 4.5V 7. SO-8 V GS = -1V -5.5 V GS = -4.5V -4.1 This MOSFET is designed to minimize the on-state resistance (R DS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. pplications D Motor ontrol D- Inverters SO-8 S2 D2 Features Low On-Resistance Low Input apacitance Fast Switching Speed Totally Lead-Free & Fully RoHS ompliant (Notes 1 & 2) Halogen and ntimony Free. Green Device (Note 3) Qualified to E-Q11 Standards for High Reliability Mechanical Data ase: SO-8 ase Material: Molded Plastic, "Green" Molding ompound. UL Flammability lassification Rating 94V- Moisture Sensitivity: Level 1 per J-STD-2 Terminal onnections Indicator: See Diagram Terminals: Finish Matte Tin nnealed Over opper Leadframe. Solderable per MIL-STD-22, Method 28 eight:.8 grams (pproximate) D2 D1 G2 S1 D2 D1 G2 G1 G1 D1 S2 S1 Top View Pin onfiguration Q2 N-HNNEL MOSFET Equivalent ircuit Q1 P-HNNEL MOSFET Ordering Information (Note 4) Part Number ase Packaging DM325LSD-13 SO-8 2,5/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 22/95/E (RoHS) & 211/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and ntimony-free, "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<15ppm total Br + l) and <1ppm antimony compounds. 4. For packaging details, go to our website at Marking Information Top View 8 5 Logo 325LD YY 1 4 Part no. Xth week: 1 ~ 53 Year: 11 = 211 DM325LSD 1 of 1 February 215
2 DM325LSD Maximum Ratings N-HNNEL Q2 unless otherwise specified.) DVNED INFORMTION haracteristic Symbol Value Units Drain-Source Voltage V DSS 3 V Gate-Source Voltage V GSS ±2 V ontinuous Drain urrent (Note 5) V GS = 1V ontinuous Drain urrent (Note 5) V GS = 4.5V Steady State t<1s Steady State t<1s T = +7 T = +7 T = +7 T = +7 Maximum ontinuous Body Diode Forward urrent (Note 5) I S 2 Pulsed Drain urrent (1µs pulse, duty cycle = 1%) M 6 Pulsed Body Diode urrent (1µs pulse, duty cycle = 1%) I SM 6 valanche urrent (Note 7) L =.1mH I S 14 valanche Energy (Note 7) L =.1mH E S 1 mj Maximum Ratings P-HNNEL Q1 (@, unless otherwise specified.) haracteristic Symbol Value Units Drain-Source Voltage V DSS -3 V Gate-Source Voltage V GSS ±2 V ontinuous Drain urrent (Note 5) V GS = -1V ontinuous Drain urrent (Note 5) V GS = -4.5V Steady State t<1s Steady State t<1s T = +7 T = +7 T = +7 T = +7 Maximum ontinuous Body Diode Forward urrent (Note 5) I S -2 Pulsed Drain urrent (1µs pulse, duty cycle = 1%) M -3 Pulsed Body Diode urrent (1µs pulse, duty cycle = 1%) I SM -3 valanche urrent (Note 7) L =.1mH I S -14 valanche Energy (Note 7) L =.1mH E S 1 mj Thermal haracteristics Total Power Dissipation (Note 6) Thermal Resistance, Junction to mbient (Note 6) Total Power Dissipation (Note 5) Thermal Resistance, Junction to mbient (Note 5) haracteristic Symbol Value Units P D 1.2 T = Steady State R θj 14 t<1s 62 P D 1.5 T = Steady State R θj 83 t<1s 49 Thermal Resistance, Junction to ase (Note 5) R θj 15 Operating and Storage Temperature Range T J, T STG -55 to +15 / / Notes: 5. Device mounted on FR-4 substrate P board, 2oz copper, with 1inch square copper plate. 6. Device mounted on FR-4 substrate P board, 2oz copper, with minimum recommended pad layout. DM325LSD 2 of 1 February 215
3 DM325LSD Electrical haracteristics N-HNNEL Q2 unless otherwise specified.) DVNED INFORMTION OFF HRTERISTIS (Note 8) haracteristic Symbol Min Typ Max Unit Test ondition Drain-Source Breakdown Voltage BV DSS 3 V V GS = V, = 25µ Zero Gate Voltage Drain urrent SS 1 µ V DS = 3V, V GS = V Gate-Source Leakage I GSS ±1 µ V GS = ±2V, V DS = V ON HRTERISTIS (Note 8) Gate Threshold Voltage V GS(th) V V DS = V GS, = 25µ Static Drain-Source On-Resistance R DS (ON) 15 2 V GS = 1V, = 7.4 mω V GS = 4.5V, = 6 Forward Transfer dmittance Y fs 8 S V DS = 5V, = 1 Diode Forward Voltage V SD V V GS = V, I S = 1 DYNMI HRTERISTIS (Note 9) Input apacitance iss 51 Output apacitance oss 72 Reverse Transfer apacitance rss 57 pf V DS = 15V, V GS = V, f = 1.MHz Gate Resistance R g 1.84 Ω V DS = V, V GS = V, f = 1.MHz Total Gate harge (V GS = 4.5V) Q g 4.6 Total Gate harge (V GS = 1V) Q g 9.8 Gate-Source harge Q gs 1.6 Gate-Drain harge Q gd 2. Turn-On Delay Time t D(on) 3.9 Turn-On Rise Time t r 4.2 Turn-Off Delay Time t D(off) 16.6 Turn-Off Fall Time t f 5.8 Reverse Recovery Time t rr 5.5 ns Reverse Recovery harge Q rr 2.6 n n ns V DS = 15V, = 1 V DD = 15V, V GS = 1V, R G = 6Ω, = 1 I F = 12, di/dt = 5/µs DM325LSD 3 of 1 February 215
4 DM325LSD Electrical haracteristics P-HNNEL Q1 unless otherwise specified.) DVNED INFORMTION OFF HRTERISTIS (Note 8) haracteristic Symbol Min Typ Max Unit Test ondition Drain-Source Breakdown Voltage BV DSS -3 V V GS = V, = -25µ Zero Gate Voltage Drain urrent SS -1 µ V DS = -3V, V GS = V Gate-Source Leakage I GSS ±1 n V GS = ±2V, V DS = V ON HRTERISTIS (Note 8) Gate Threshold Voltage V GS(th) V V DS = V GS, = -25µ V GS = -1V, = -5.2 Static Drain-Source On-Resistance R DS (ON) mω V GS = -4.5V, = -4 Forward Transfer dmittance Y fs 5 S V DS = -5V, = -5.2 Diode Forward Voltage V SD V V GS = V, I S = -1 DYNMI HRTERISTIS (Note 9) Input apacitance iss 59 pf Output apacitance oss 69 pf Reverse Transfer apacitance rss 53 pf V DS = -25V, V GS = V, f = 1.MHz Gate Resistance R g 11 Ω V DS = V, V GS = V, f = 1.MHz Total Gate harge (V GS = 4.5V) Q g 5.1 n Total Gate harge (V GS = 1V) Q g 1.5 n Gate-Source harge Q gs 1.8 n Gate-Drain harge Q gd 1.9 n Turn-On Delay Time t D(on) 6.8 ns Turn-On Rise Time t r 4.9 ns Turn-Off Delay Time t D(off) 28.4 ns Turn-Off Fall Time t f 12.4 ns Reverse Recovery Time t rr 14 ns Reverse Recovery harge Q rr 11 n V DS = -15V, = -6 V DD = -15V, V GS = -1V, R G = 6Ω, = -1 I F = 12, di/dt = 5/µs Notes: 7. I S and E S rating are based on low frequency and duty cycles to keep T J = Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DM325LSD 4 of 1 February 215
5 DM325LSD N-HNNEL V = 5.V DS DVNED INFORMTION, DRIN URRENT () R DS(ON), DRIN-SOURE ON-RESISTNE ( Ω ) V DS, DRIN-SOURE VOLTGE (V) Figure 1. Typical Output haracteristic V = 4.5V GS V GS = 1V , DRIN-SOURE URRENT () Figure. 3 Typical On-Resistance vs. Drain urrent and Gate Voltage, DRIN URRENT () R DS(ON), DRIN-SOURE ON-RESISTNE ( Ω ) T = 15 T = 125 T = 85 T = 25 T = V GS, GTE-SOURE VOLTGE (V) Figure 2. Typical Transfer haracteristics = V GS, GTE-SOURE VOLTGE (V) Figure 4. Typical On-Resistance vs. Drain urrent and Gate Voltage R DS(ON), DRIN-SOURE ON-RESISTNE ( Ω ) V = 4.5V GS T = 125 T = 15 T = 85 T = 25 T = , DRIN URRENT () Figure 5. Typical On-Resistance vs. Drain urrent and Temperature R DS(ON), DRIN-SOURE ON-RESISTNE (NORMLIZED) V GS = 1V = 1 V GS = 4.5V = T J, JUNTION TEMPERTURE ( ) Figure 6. On-Resistance Variation with Temperature DM325LSD 5 of 1 February 215
6 DM325LSD DVNED INFORMTION R DS(ON), DRIN-SOURE ON-RESISTNE ( Ω ) I, SOURE URRENT () S V GS = 4.5V = 5 V GS = 1V = T J, JUNTION TEMPERTURE ( ) Figure 7. On-Resistance Variation with Temperature T = 25 V GS(th), GTE THRESHOLD VOLTGE (V), JUNTION PITNE (pf) I = 25µ D = 1m T J, JUNTION TEMPERTURE ( ) Figure 8 Gate Threshold Variation vs. mbient Temperature T 1, 1, 1 f = 1MHz iss oss rss V SD, SOURE-DRIN VOLTGE (V) Figure 9. Diode Forward Voltage vs. urrent V DS, DRIN-SOURE VOLTGE (V) Figure 1. Typical Junction apacitance 1 V GS GTE THRESHOLD VOLTGE (V) V DS = 15V = 1, DRIN URRENT () RDS(on) Limited D P = 1s P = 1s T J(max) = 15 T = 25 Single Pulse P = 1ms P = 1ms P = 1ms P = 1µs P = 1µ s Q g, TOTL GTE HRGE (n) Figure 11. Gate harge V DS, DRIN-SOURE VOLTGE (V) Figure 12. SO, Safe Operation rea DM325LSD 6 of 1 February 215
7 DM325LSD 2 V = -1V GS V = -5.V GS P-HNNEL 2 V DS = -5.V DVNED INFORMTION -, DRIN URRENT () R DS(ON),DRIN-SOURE ON-RESISTNE ( Ω ) V GS = -4.5V V GS = -4.V V GS = -3.5V V GS = -3.V V = -2.5V V DS, DRIN -SOURE VOLTGE (V) Figure 13. Typical Output haracteristics , DRIN SOURE URRENT () Figure 15. Typical On-Resistance vs. Drain urrent and Gate Voltage -, DRIN URRENT () 15 1 GS R DS(ON),DRIN-SOURE ON-RESISTNE ( Ω ) T = 125 T = 15 T = 85 T = 25 T = V GS, GTE-SOURE VOLTGE (V) Figure 14. Typical Transfer haracteristics V GS, GTE SOURE VOLTGE (V) Figure 16. Typical On-Resistance vs. Drain urrent and Gate Voltage R DS(ON), DRIN-SOURE ON-RESISTNE( Ω ) V GS = -4.5V T = 15 T = 125 T = 85 T = 25 T = , DRIN SOURE URRENT () Figure 17. Typical On-Resistance vs. Drain urrent and Temperature R DS(ON), DRIN-SOURE ON-RESISTNE (NORMLIZED) T J, JUNTION TEMPERTURE ( ) Figure 18. On-Resistance Variation with Temperature DM325LSD 7 of 1 February 215
8 DM325LSD DVNED INFORMTION R DS(on), DRIN-SOURE ON-RESISTNE ( Ω ) -I, SOURE URRENT () S V GS = -4. 5V = -5 V GS = -1V = T J, JUNTION TEMPERTURE ( ) Figure 19. On-Resistance Variation with Temperature V GS(TH), GTE THRESHOLD VOLTGE(V) T, MBIENT TEMPERTURE ( ) Figure 2. Gate Threshold Variation vs. mbient Temperature, JUNTION PITNE (pf) T 1, 1, 1 iss oss rss f = 1MHz V SD, SOURE-DRIN VOLTGE (V) Figure 21. Diode Forward Voltage vs. urrent V DS, DRIN-SOURE VOLTGE (V) Figure 22. Typical Junction apacitance 1 1 RDS(on) Limited P = 1µ s -V GS, GTE-SOURE VOLTGE (V) I D, DRIN URRENT () D P = 1s P = 1s T J(max) = 15 Single Pulse P = 1ms P = 1ms P = 1ms P = 1µs Q g, TOTL GTE HRGE (n) Figure 23. Gate-harge haracteristics V DS, DRIN-SOURE VOLTGE (V) Figure 24. SO, Safe Operation rea DM325LSD 8 of 1 February 215
9 DM325LSD 1 DVNED INFORMTION r(t), TRNSIENT THERML RESISTNE.1.1 D =.7 D =.5 D =.3 D =.1 D =.5 D =.2 D =.1 D =.5 D = Single Pulse D = t1, PULSE DURTION TIMES (sec) Figure 25 Transient Thermal Resistance Package Outline Dimensions Please see P22 at for the latest version. R thja (t) = r(t) * Rthja R = 83/ thja Duty ycle, D = t1/ t2 e D b E1 2 E 3 1 h Detail 45 L ~9 Gauge Plane Seating Plane Detail SO-8 Dim Min Max b.3.5 D E E e 1.27 Typ h -.35 L θ 8 ll Dimensions in mm Suggested Pad Layout Please see P21 at for the latest version. SO-8 X 2 1 Dimensions Value (in mm) X.6 Y Y DM325LSD 9 of 1 February 215
10 DM325LSD IMPORTNT NOTIE DIODES INORPORTED MKES NO RRNTY OF NY KIND, EXPRESS OR IMPLIED, ITH REGRDS TO THIS DOUMENT, INLUDING, BUT NOT LIMITED TO, THE IMPLIED RRNTIES OF MERHNTBILITY ND FITNESS FOR PRTIULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LS OF NY JURISDITION). DVNED INFORMTION Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. ny ustomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should ustomers purchase or use Diodes Incorporated products for any unintended or unauthorized application, ustomers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the hief Executive Officer of Diodes Incorporated. s used herein:. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, ustomers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. opyright 215, Diodes Incorporated DM325LSD 1 of 1 February 215
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DVNCED NEW INFORMTION Green. SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (μ),.3 5 Description and pplications Features and Benefits Glass Passivated
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DVNCED NEW INFORMTION Green. SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (μ),.3 5 Description and pplications Features and Benefits Glass Passivated
More informationGreen. PowerDI123. Top View. Part Number Compliance Case Packaging DFLS260Q-7 Automotive PowerDI /Tape & Reel
Green 2.A SURFAE MOUNT SHOTTKY BARRIER RETIFIER POWERDI 123 Product Summary V R (V) I F (A) V F MAX (V) @ +25 I R MAX (ma) @ +25 6 2..62.1 Description and Applications This Schottky Barrier Rectifier has
More informationGreen SOD123F. Date Code Key Year Code C D E F G H I J
DVNCED INFORMTION Green.0 SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (µ),000.3 Description and pplications The is a rectifier packaged in the
More informationGreen. Pin1. Top View Pin Configuration. Part Number Case Packaging DMTH3004LPS-13 POWERDI ,500/Tape & Reel
NEW PROUCT AVANCE INFORMATION Product Summary BV SS 3V R S(ON) Max 3.8mΩ @ V GS = V 6mΩ @ V GS = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOSFET is designed to minimize the on-state
More informationBC817-16Q /-40Q. Mechanical Data. Description. Features. Ordering Information (Notes 4 and 5) Marking Information
45V NPN SMALL SIGNAL TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV EO > 45V I =.5A
More informationB170BQ - B1100BQ. Features and Benefits. Product Summary C) Mechanical Data. Applications. Ordering Information (Note 5) Marking Information
Green 1.0A HIGH VOLTAGE SHOTTKY BARRIER RETIFIER Product Summary (@+25 ) B170BQ B180BQ B190BQ 70 1.0 0.79 0.5 80 1.0 0.79 0.5 90 1.0 0.79 0.5 B10BQ 0 1.0 0.79 0.5 Features and Benefits Guard Ring Die onstruction
More informationFeatures and Benefits. Product Summary. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information D28V0H1U2P5Q
Green 800W SURFCE MOUNT TRNSIENT VOLTGE SUPPRESSOR Product Summary V RWM V BR Min I PPM Max 28V 3V 4 Features and Benefits Uni-directional polarity Low profile thermally efficient package Compliant with
More informationGreen SMC. Top View Bottom View. Part Number Compliance Case Packaging B5X0CQ-13-F Automotive SMC 3,000/Tape & Reel
Green 5. SURFCE MOUNT SCHOTTKY BRRIER RECTIFIER Product Summary B52CQ/B53CQ/B54CQ V RRM (V) I O () V F Max (V) I R Max (m) 2/3/4 5..55.5 B55CQ/B56CQ V RRM (V) I O () V F Max (V) I R Max (m) 5/6 5..7.5
More informationZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3F38N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) T A = 25 C N-CH 30V 9.0nC 33mΩ @ = 0V 5.0A 60mΩ @ = 4.5V 3.9A
More informationB3XXXBE B3XXBE B370BE-B3100BE B370CE-B3100CE. Features and Benefits. Product Summary. Mechanical Data. Description and Applications
reen B370BE-B3100BE 3.0A SHOTTKY BARRIER RETIFIER Product Summary Device V RRM (V) I O (A) V F Max (V) I R Max (ma) @ +25 @ +25 B370BE/E 70 3.0 0.79 0.10 B380BE/E 80 3.0 0.79 0.15 B390BE/E 90 3.0 0.79
More informationZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET
A Product Line of Diodes Incorporated ZXMCA86N8 0V SO8 Complementary Dual enhancement mode MOSFET Summary Device V (BR)DSS (V) Q G (nc) R DS(on) (Ω) (A) T A = 25 C Q 0 9.2 0.230 @ = V 2. 0.300 @ =.9 Q2-0
More informationZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC0A07N8 00V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 00V 2.9nC 0.70Ω @ = 0V.0A 0.90Ω @ = 6.0V
More informationZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3A0N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 30V 3.9nC 25m @ = 0V 2.7A 80m @ = 4. 2.2A
More informationGreen. Case Material: Molded Plastic. UL Flammability Classification 3.3V - 200V Nominal Zener Voltage Range
Green 3.W SURFACE MOUNT POWER ENER DIODE Features Mechanical Data 3.W Power Dissipation Case: SMB Ideally Suited for Automated Assembly Case Material: Molded Plastic. UL Flammability Classification 3.3V
More informationGreen. Features. TO220AB Bottom View. Part Number Case Packaging SDT20B100CT TO220AB 50 Pieces/Tube
Green 20 TRENCH SCHOTTKY RECTIFIER Product Summary (Per Leg) V V RRM (V) I O () F Max (V) I R Max (µ) @ +25 C @ +25 C 0 0.80 0 Description and pplications Features Low Forward Voltage Drop Excellent High
More informationGreen. Bottom View. Top View
Product Summary B140Q/BQ V RRM (V) I O (A) V Max (V) I R Max (ma) T A = +25 T A = +25 40 1.0 0.5 0.5 B150Q, B160Q V RRM (V) I O (A) V Max (V) I R Max (ma) T A = +25 T A = +25 50/60 1.0 0.7 0.5 Description
More informationB3XXAE B320AE-B345AE. Product Summary. Features and Benefits. Mechanical Data. Description and Applications NEW PRODUCT. Ordering Information (Note 4)
Green 3.0A SCHOTTKY BARRIER RECTIFIER Product Summary B320AE/B330AE/B340AE/B345AE V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 20 3 0.5 0. 30 3 0.5 0.15 40 3 0.5 0.20 45 3 0.5 0.30 Features
More informationPackage Pin Out Configuration. Part Number Compliance Marking Reel Size (inch) Tape Width (mm) Quantity per Reel UMC4NQ-7 Automotive NP ,000
YM DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features Ultra-Small Surface Mount Package Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Totally Lead-Free
More informationGreen. Top View Pin Diagram Internal Schematic. Part Number Case Packaging MSB12M-13 MSB 3,000/Tape & Reel
Green.2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (µa),000.2. 5 Features and Benefits Glass Passivated Die Construction Compact, Thin
More informationGreen. Bottom View. Top View. Part Number Qualification Case Packaging SMCJXX(C)AQ-13-F* Automotive SMC 3000/Tape & Reel
Green J14()AQ J36()AQ 1,500W SURFAE MOUNT AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR Product Summary (@T A = +25 ) P PK I FSM (A) V RWM (V) PM (AV) 1500W 200 14-36 5W Features and Benefits 1500W Peak Pulse
More informationSOD123. Top View. M5X = Product Type Marking Code YM = Date Code Marking Y = Year (ex.: E = 2017) M = Month (ex: 9 = September)
0.5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary V F(MAX) (V) I R(MAX) (µa) V RRM (V) I O (A) @ +25 C @ +25 C 80 0.5 0.80 5 Description and Applications This is a single rectifier packaged
More informationK3N MMBT3906. Features. Mechanical Data. Ordering Information (Notes 4 & 5) Marking Information 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 MMBT3906
YM 40V PNP SMLL SIGNL TRNSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Ideal for Medium Power mplification and Switching Complementary NPN Type: MMBT3904 Totally Lead-Free
More informationGreen. Part Number Case Packaging SBRT3U60SAF-13 SMAF 10,000/Tape & Reel
Green 3A Trench SBR TRENCH SUPER BARRIER RECTIFIER Product Summary V V RRM (V) I O (A) F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 60 3 0.53 0.5 Description and Applications The device is a 3A 60V single
More informationADVANCED INFORMATION
1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary V RRM (V) I O (A) V F(MAX) (V) @ +25 C I R(MAX) (µa) @ +25 C 80 1 0.80 5 Description and Applications Features and Benefits Low Forward Voltage
More informationGreen SMC. Top View Bottom View. Part Number Case Packaging B5XXCE-13 SMC 3,000/Tape & Reel
Green 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary B520CE/B530CE/B540CE V RRM (V) I O (A) V F Max (V) I R Max (ma) 20 5.0 0.55 0.2 30 5.0 0.55 0.2 40 5.0 0.55 0.2 Features and Benefits
More informationGreen. SOD123F (Standard) Top View. Part Number Qualification Case Packaging US1GWF-7 AEC-Q101 SOD123F (Standard) 3,000/Tape & Reel
Green.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 400.25 Description The is a rectifier packaged in the SOD23F (Standard) package and
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2304S8-13 DGD ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description Features The is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing
More informationGreen. Part Number Compliance Case Packaging PDU Commercial PowerDI5 5,000/Tape & Reel
NEW PODUCT Green 5 ULT-FST ECOVEY ECTIFIE PowerDI Product Summary (@T = +25 C) V M (V) I O () V F Max (V) I Max (μ) 4 5 1.185 1 Description Features and Benefits Glass Passivated Die Construction Ultra-Fast
More informationTop View BAT54T BAT54AT BAT54CT BAT54ST
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Mechanical Data Ultra-Small Surface Mount Package Low Forward Voltage Drop Fast Switching PN Junction Guard Ring for Transient and ESD Protection Totally Lead-Free
More informationGreen. Bottom View. Top View. Part Number Compliance Case Packaging SDT3A45SA-13 Commercial SMA 5,000/Tape & Reel
Green 3A TRENCH SCHOTTKY BARRIER RECTIFIER SMA Product Summary (@ T A = +25 C ) V RRM (V) I O (A) V F(MAX) (mv) I R(MAX) (µa) 45 3 480 280 Features and Benefits Low Leakage Current Soft, Fast Switching
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DGD2101MS8-13 DGD ,500
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage
More informationApplications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000
YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R
More informationFeatures. Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel DGD2103MS8-13 DGD2103M ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description The is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD65T50S1PT DGTD65T50S1 450 per Box in Tubes (Note 5)
650V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance. Features High-Speed Switching
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD21844S14-13 DGD ,500
HALF- BRIDGE GATE DRIVER IN SO-14 Description The is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD120T25S1PT DGTD120T25S1 450 per Box in Tubes (Note 5)
1200V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides low V CE(sat), excellent quality and high-switching performance. Features High
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging MSB30M-13 Commercial MSBL 2,500/Tape & Reel
Green 3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 3.0 1.1 5 Features and Benefits Glass Passivated Die Construction Compact,
More informationGreen T-DFN Part Number Compliance Case Packaging LBS10-13 Commercial T-DFN ,000/Tape & Reel
Green 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 1000 1 1.1 5 Description and Applications The is a surface mount glass
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging MB10S-13 Commercial MBS 3,000/Tape & Reel
Green 0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 000 0.8. 5 Description and Applications Features and Benefits Glass Passivated
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2005S8-13 DGD
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The is a mid-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging HDS20M-13 Commercial HDS 5,000/Tape & Reel
Green 2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 2 0.95 5 Features and Benefits Glass Passivated Die Construction Miniature
More informationDCX(xxxx)U. Features. Mechanical Data. Ordering Information (Note 3 & 4) SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR.
DX(xxxx)U SMALL SIGNAL OMPLEMENTARY PRE-BIASED DUAL TRANSISTOR Features Epitaxial Planar Die onstruction Built-In Biasing Resistors Surface Mount Package Suited for Automated Assembly Totally Lead-Free
More informationADC114YUQ. Mechanical Data. Features. Ordering Information (Notes 4 & 5) Marking Information NXX 1Y7 YM NXX YM
NXX YM NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Built-In Biasing Resistors Totally Lead-Free & Fully RoHS Compliant (Notes &
More informationGreen. Part Number Qualification Case Packaging P4SMAJXXADF-13 Commercial D-FLAT 10,000/Tape & Reel
Green 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data Packaged in the Low Profile D-FLAT to Optimize Board Space Case: D-FLAT Glass Passivated Die Construction Excellent Clamping
More informationPART OBSOLETE - NO ALTERNATE PART Green. Features DO-214AA
Green LOW VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 5 0.55 0.1 Description Low voltage Schottky rectifier suited for switch mode
More informationGreen. Features DO-214AC
Green SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 3 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationFeatures. Typical Configuration ZXGD3113W6. Top View Pin-Out
SYNCHRONOUS MOSFET CONTROLLER IN Description The is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a differential amplifier detector stage and high current
More informationFeatures DNC GND GND GND GATE GATE. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3108N8TC ZXGD ,500
V ACTIVE OR'ING MOSFET CONTROLLER IN SO8 Description is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
More informationAL5801. Description. Pin Assignments. Features. Applications. Typical Applications Circuit 100V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER AL5801
AL581 1V, ADJUSTABLE URRENT SINK LINEAR LED DRIVER Description Pin Assignments The AL581 combines a 1V N-channel MOSFET with a prebiased NPN transistor to make a simple, small footprint LED driver. (Top
More informationDevice Symbol. Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BC846ASQ-7-F Automotive KNS 7 8 3,000
KNS YM 65V DUAL NPN SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV CEO
More informationFeatures. Top View Pin-Out
40 1A GATE DRIE SOT363 Description is a high-speed, non-inverting single gate driver for switching MOSFETs. It can transfer up to 1A peak source/sink current into the gate for effective charging and discharging
More informationGreen. Features 90A 90A. PowerDI S. Pin1. Top View Pin Configuration. Part Number Case Packaging DMT4004LPS-13 PowerDI ,500 / Tape & Reel
Product ummary Green 4V N-CHANNEL ENHANCEMENT MOE MOFET POWERI Features BV 4V R (ON) Max 2.5mΩ @ V G = V 4mΩ @ V G = 4.5V I T C = +25 C 9A 9A % Unclamped Inductive witching ensures more reliable and robust
More informationDGD Ordering Information (Note 4) Marking Information YYWW DGD05473 HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN
HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN3030-10 Description The is a high-frequency gate driver capable of driving N- channel MOSFETs. The floating high-side driver is rated up to 50V.
More informationPART OBSOLETE - USE ZXGD3111N7. Features. GND GND Vcc GATE. GATE Top View Pin-Out
PART OBSOLETE - USE N7 V ACTIVE OR-ING MOSFET CONTROLLER IN SO8 Description is a V Active OR-ing MOSFET controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces
More informationGreen. Part Number Compliance Case Packaging DBF Commercial DBF 3,000/Tape & Reel
Green 3A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa),000 3.0 5 Features and Benefits Glass Passivated Die Construction Miniature Package
More informationGreen. Part Number Case Packaging MSB10M-13 MSB 3,000/Tape & Reel
DVD W PDT FMT Green.0 SF MT GLSS PSSVTD BDG TF Product Summary (@T = +25 ) V M (V) () V F (V) (µ),000.0.05 5 Features and Benefits Glass Passivated Die onstruction ompact, Thin Profile Package Design eliable
More informationX2-DFN Bottom View. Part Number Case Packaging BAT54LPS-7 X2-DFN ,000/Tape & Reel
.2 SUFCE MOUT SCHOTTKY BIE DIODE Features Mechanical Data Low Forward Voltage Drop Fast Switching Ultra-Small Leadless Surface Mount Package P Junction Guard ing for Transient and ESD Protection Totally
More informationSBR5E45P5. Features and Benefits. Product Summary A = +25 C) Description and Applications. Mechanical Data. Ordering Information (Note 4)
Green 5A SBR SUPER BARRIER RECTIFIER Product Summary (@T A = +25 C) Features and Benefits ADVANCED NEW NEW INFORMATION V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) 45 5 0.6 0.28 Description and Applications
More informationDGD Features. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information YYWW DGD05463
HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME IN W-DFN3030-10 (Type TH) Description The is a high-frequency half-bridge gate driver capable of driving N-channel MOSFETs in a half-bridge
More informationFeatures SO-7. Typical Configuration for Low-Side -ve Supply Rail DRAIN. Top View
V ACTIVE OR'ING MOSFET CONTROLLER IN SO7 Description The is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
More informationFeatures DO-41 DO-15 DO-214AC
SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 60 2 0.68 0.5 Description The is a low voltage dual Schottky rectifier suited for switch mode
More informationFeatures DO-15 DO-214AC SOD-123
SCHOTTKY BARRIER RECTIFIERS Product Summary Features V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 2 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationFeatures. Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DM SO-7 Standard BF ,000/Tape & Reel
2-CHANNEL LOW CAPACITANCE ESD PROTECTION ARRAY Product Summary V F (Typ) V P (Typ) C OUT (Typ) 0.8V 5V 1.5pF Description is a high-performance device suitable for protecting two high-speed channels. This
More informationFeatures TO-220F-3 TO (2) TO-263-2
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3104N8TC ZXGD ,500
SYNCHRONOUS MOSFET CONTROLLER IN SO8 Description The ZXGD3104 is intended to drive MOSFETs configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and
More informationFeatures. TO-220F-3 (Option 1) TO (2) TO TO (1)
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary Features V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 200 2x5 0.95 0.5 Description High voltage dual Schottky rectifier suited for
More informationNVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
More informationFDP8D5N10C / FDPF8D5N10C/D
FDP8D5NC / FDPF8D5NC N-Channel Shielded Gate PowerTrench MOSFET V, 76 A, 8.5 mω Features Max r DS(on) = 8.5 mω at V GS = V, I D = 76 A Extremely Low Reverse Recovery Charge, Qrr % UIL Tested RoHS Compliant
More informationRDBF31-RDBF310. Product Summary A = +25 C) Features and Benefits ADVANCED INFORMATION NEW PRODUCT. Description and Applications.
Green 3.0A SURFACE MOUNT FAST GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V FM (V) I R (μa) 00,800,600, 400,200,0 3.0.3 5 Description and Applications Suitable for
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