Top View. Part Number Case Packaging DMNH6042SPD-13 PowerDI (Type C) 2,500/Tape & Reel
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- Duane Perry
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1 FM FM H HM M MF Product ummary B 6 ) max = = 4.5 max = +5 4 Features and Benefits ated to +75 deal for High mbient emperature nvironments % nclamped nductive witching ensures more reliable and robust end application ow ) minimizes power losses ow Q g minimizes switching losses otally ead-free & Fully oh ompliant otes & ) Halogen and ntimony Free. reen evice ote 3) Qualified to -Q tandards for High eliability n utomotive-ompliant Part is vailable nder eparate atasheet Q) escription and pplications his new generation MF is designed to minimize the on-state resistance ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ngine Management ystems Body ontrol lectronics - onverters Mechanical ata ase: Power56- ype ) ase Material: Molded Plastic, "reen" Molding ompound. Flammability lassification ating 94- Moisture ensitivity: evel per J-- erminal onnections ndicator: ee iagram erminals: Finish Matte in nnealed over opper eadframe. olderable per M--, Method Weight:.97 grams pproximate) op iew Pin Bottom iew Pin out op iew quivalent ircuit rdering nformation ote 4) otes: Part umber ase Packaging -3 Power56- ype ),5/ape & eel. o purposely added lead. Fully irective /95/ oh) & /65/ oh ) compliant.. ee for more information about iodes ncorporated s definitions of Halogen- and ntimony-free, "reen" and ead-free. 3. Halogen- and ntimony-free "reen products are defined as those which contain <9ppm bromine, <9ppm chlorine <5ppm total Br + l) and <ppm antimony compounds. 4. For packaging details, go to our website at Marking nformation H64 = Manufacturer s Marking H64 = Product ype Marking ode YYWW = ate ode Marking YY = Year ex: 6 = 6) WW = Week to 53) YY WW ocument number: 3737 ev. 3 - of 7 June 6 iodes ncorporated
2 FM FM Maximum = +5, unless otherwise specified.) haracteristic ymbol alue nits rain-ource oltage 6 ate-ource oltage ± ontinuous rain urrent ote 6) = teady = tate = ontinuous rain urrent ote 7) = teady = +5 4 tate = + 7 Pulsed rain urrent µs pulse, duty cycle = %) M 3 Maximum ontinuous Body iode Forward urrent ote 7) 4 valanche urrent ote ) = mh 3.5 valanche nergy ote ) = mh 65 mj hermal = +5, unless otherwise specified.) haracteristic ymbol alue nits otal Power issipation ote 5) P W hermal esistance, Junction to mbient ote 5) teady state t<s J /W otal Power issipation ote 6) P W hermal esistance, Junction to mbient ote 6) teady state t<s J /W hermal esistance, Junction to ase ote 7) J perating and torage emperature ange J, -55 to +75 lectrical = +5, unless otherwise specified.) haracteristic ymbol Min yp Max nit est ondition FF H ote 9) rain-ource Breakdown oltage B 6 =, = 5μ Zero ate oltage rain urrent J = +5 µ = 6, = ate-ource eakage ± n = ±, = H ote 9) ate hreshold oltage H). 3. =, = 5μ tatic rain-ource n-esistance ) 34 5 =, = 5. mω = 4.5, = 4.4 iode Forward oltage.. =, =.6 YM H ote ) nput apacitance iss 54 pf = 5, =, utput apacitance oss 3 pf f =.MHz everse ransfer apacitance rss 4 pf ate esistance g 3. Ω =, =, f = MHz otal ate harge = 4.5) Q g 4. n otal ate harge = ) Q g. n ate-ource harge Q gs. n = 44, = 5. ate-rain harge Q gd. n urn-n elay ime t ) 3.4 ns urn-n ise ime t.9 ns =, = 3, urn-ff elay ime t FF). ns = 6Ω, = urn-ff Fall ime t F 4.5 ns Body iode everse ecovery ime t.9 ns F =.6, di/dt = /μs Body iode everse ecovery harge Q 5.4 n F =.6, di/dt = /μs otes: 5. evice mounted on F-4 P board, with minimum recommended pad layout, single sided. 6. evice mounted on F-4 substrate P board, oz copper, with thermal bias to bottom layer inch square copper plate. 7. hermal resistance from junction to soldering point on the exposed drain pad).. and rating are based on low frequency and duty cycles to keep J = hort duration pulse test used to minimize self-heating effect.. uaranteed by design. ot subject to product testing. ocument number: 3737 ev. 3 - of 7 June 6 iodes ncorporated
3 ), - - MZ) ), - - ) ), - - ) FM FM, ), ) = = = 5. = 4.5 = 4. = 3.5 =. = , - ) Figure ypical utput haracteristics ), 5 5 = 5 = 5 = 75 = 5 = 5 = , - ) Figure ypical ransfer haracteristics = 4.5 = , - ) Figure 3 ypical n-esistance vs. rain urrent and ate oltage ) - -, ), - - ) ) = = 75 = 5 = 5 = 5 = 5 = , ) Figure 4 ypical n-esistance vs. rain urrent and emperature = = 5. = 4.5 = = 4.5 = = = J, J MP ) Figure 5 n-esistance ariation with emperature J, J MP ) Figure 6 n-esistance ariation with emperature ocument number: 3737 ev. 3-3 of 7 June 6 iodes ncorporated
4 ), ), J P pf) FM FM, ) H), HH ) ) H H, h ) t = 5µ = m J, J MP ) Figure 7 ate hreshold ariation vs. Junction emperature ), = 5 = 5 = 75 = 5 = 5 = , - ) Figure iode Forward oltage vs. urrent ) n K,, K n) , - ) Figure 9 ypical rain-ource eakage urrent vs. oltage = 75 = 5 = 5 = 5 = 5 iss oss rss f = MHz , - ) Figure ypical Junction apacitance ) imited 6 4 = 44, = Q g n) Figure ate harge ),. P W = s P W = s Jmax) = 5 = 5 = ingle Pulse on * MP Board P W = ms P W = ms P W = ms P = µs W.., - ) Figure, afe peration rea ocument number: 3737 ev. 3-4 of 7 June 6 iodes ncorporated
5 FM FM rt), HM =.9 =.7 =.5 =.3. =. =.5 =.. =. =.5 = ingle Pulse Jt) = rt) * J θj = 5 /W 癈 uty ycle, = t/ t t, P M sec) Figure 3 ransient hermal esistance ocument number: 3737 ev. 3-5 of 7 June 6 iodes ncorporated
6 FM FM Package utline imensions Please see for the latest version. Power56- ype ) y a x Ø. epth.7±.3 bx) e/ bx) bx) 3 k k 4 M c e 4x) 4x) eating Plane Power56- ype ) im Min Max yp b b b c B B e.7b k k a M x y θ θ 6 7 ll imensions in mm uggested Pad ayout Please see for the latest version. Power56- ype ) Y3 Y X X3 X X4 X Y Y4x) imensions alue in mm) X.6 X 3.9 X.65 X3.65 X4 4.4 Y.7 Y. Y 3. Y3 6.6 ocument number: 3737 ev. 3-6 of 7 June 6 iodes ncorporated
7 FM FM MP P MK WY F Y K, XP MP, WH H M,, B M, H MP W F MHBY F F P PP H Q H W F Y J). iodes ncorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes ncorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes ncorporated convey any license under its patent or trademark rights, nor the rights of others. ny ustomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes ncorporated and all the companies whose products are represented on iodes ncorporated website, harmless against all damages. iodes ncorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. hould ustomers purchase or use iodes ncorporated products for any unintended or unauthorized application, ustomers shall indemnify and hold iodes ncorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more nited tates, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more nited tates, international or foreign trademarks. his document is written in nglish but may be translated into multiple languages for reference. nly the nglish version of this document is the final and determinative format released by iodes ncorporated. F PP iodes ncorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the hief xecutive fficer of iodes ncorporated. s used herein:. ife support devices or systems are devices or systems which:. are intended to implant into the body, or. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes ncorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes ncorporated. Further, ustomers must fully indemnify iodes ncorporated and its representatives against any damages arising out of the use of iodes ncorporated products in such safety-critical, life support devices or systems. opyright 6, iodes ncorporated ocument number: 3737 ev. 3-7 of 7 June 6 iodes ncorporated
Green. Features TO252 (DPAK) Part Number Case Packaging DMPH6023SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel
V FM reen MPH623K3Q 6V 75 P-HL HM M MF Product ummary BV -6V ) Max Max = +25 33mΩ @ V = -V -35 4mΩ @ V = -4.5V -32 escription and pplications his MF has been designed to meet the stringent requirements
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6 P W U PW Description his ipolar Junction ransistor (J) is designed to meet the stringent requirements of automotive applications. Features > 6 = 3 High ontinuous ollector urrent M up to 6 Peak Pulse
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YM ADVANCED INFORMATION 2V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 2V Description R DS(ON) max I D max T A = +25 C 25mΩ @ V GS = 4.5V 6.5A 31mΩ @ V GS = 2.5V 5.9A 6mΩ @ V GS = 1.8V 4.5A
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YWW NEW PRODUT 500V PNP HIGH PERFORMANE TRANSISTOR IN Features BV EO > -500V I = -150mA High ontinuous urrent I M = -500mA Peak Pulse urrent Totally Lead-Free & Fully RoHS ompliant (Notes 1 & 2) Halogen
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YM Product Summary Device BV DSS R DS(ON) max Q N-Channel Q2 P-Channel Description 2V -2V I D max T A = +25 C 25mΩ @ V = 4.5V.A 3mΩ @ V = 3.3V 5.5A 32mΩ @ V = 2.5V 5.3A 8mΩ @ V = -4.5V -3.4A 9mΩ @ V =
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40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS 40V R DS(on) T A = 25 C 34mΩ @ = V 7.2A 59mΩ @ = 4.5V 5.5A Description and Applications This MOSFET has been designed to minimize the on-state
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NAB YM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary R DS(ON) max I D T A = +25 C 2V.55Ω @ V GS = 4.5V 54mA BV DSS Description and Applications This MOSFET is designed to minimize the on-state
More informationGreen. Bottom View. Top View
Product Summary B140Q/BQ V RRM (V) I O (A) V Max (V) I R Max (ma) T A = +25 T A = +25 40 1.0 0.5 0.5 B150Q, B160Q V RRM (V) I O (A) V Max (V) I R Max (ma) T A = +25 T A = +25 50/60 1.0 0.7 0.5 Description
More informationGreen. Case Material: Molded Plastic. UL Flammability Classification 3.3V - 200V Nominal Zener Voltage Range
Green 3.W SURFACE MOUNT POWER ENER DIODE Features Mechanical Data 3.W Power Dissipation Case: SMB Ideally Suited for Automated Assembly Case Material: Molded Plastic. UL Flammability Classification 3.3V
More informationZXMS6004N8. Product Summary. Features and Benefits ADVANCE INFORMATION. Description. Mechanical Data. Applications. Ordering Information (Note 4)
AVANCE INFORMATION Clamping Product Summary 60V N-CHANNEL SELF PROTECTE ENHANCEMENT MOE INTELLIFET MOSFET Features and Benefits Continuous rain Source Voltage 60V On-State Resistance 500mΩ Nominal Load
More informationFeatures. Top View. Part Number Case Packaging DMN3008SCP10-7 X4-DSN /Tape & Reel
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary BV SSS R SS(ON) MAX I S T A = +25 C 30V 7.8mΩ @ V GS =V 14.6A Description This new generation MOSFET has been designed to minimize the on-state resistance
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DVNCED INFORMTION Green.0 SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (µ),000.3 Description and pplications The is a rectifier packaged in the
More informationGreen. Top View Pin Diagram Internal Schematic. Part Number Case Packaging MSB12M-13 MSB 3,000/Tape & Reel
Green.2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (µa),000.2. 5 Features and Benefits Glass Passivated Die Construction Compact, Thin
More informationGreen SMC. Top View Bottom View. Part Number Compliance Case Packaging B5X0CQ-13-F Automotive SMC 3,000/Tape & Reel
Green 5. SURFCE MOUNT SCHOTTKY BRRIER RECTIFIER Product Summary B52CQ/B53CQ/B54CQ V RRM (V) I O () V F Max (V) I R Max (m) 2/3/4 5..55.5 B55CQ/B56CQ V RRM (V) I O () V F Max (V) I R Max (m) 5/6 5..7.5
More informationB3XXAE B320AE-B345AE. Product Summary. Features and Benefits. Mechanical Data. Description and Applications NEW PRODUCT. Ordering Information (Note 4)
Green 3.0A SCHOTTKY BARRIER RECTIFIER Product Summary B320AE/B330AE/B340AE/B345AE V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 20 3 0.5 0. 30 3 0.5 0.15 40 3 0.5 0.20 45 3 0.5 0.30 Features
More informationGreen. Bottom View. Top View. Part Number Qualification Case Packaging SMCJXX(C)AQ-13-F* Automotive SMC 3000/Tape & Reel
Green J14()AQ J36()AQ 1,500W SURFAE MOUNT AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR Product Summary (@T A = +25 ) P PK I FSM (A) V RWM (V) PM (AV) 1500W 200 14-36 5W Features and Benefits 1500W Peak Pulse
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40 1A GATE DRIE SOT363 Description is a high-speed, non-inverting single gate driver for switching MOSFETs. It can transfer up to 1A peak source/sink current into the gate for effective charging and discharging
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging MSB30M-13 Commercial MSBL 2,500/Tape & Reel
Green 3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 3.0 1.1 5 Features and Benefits Glass Passivated Die Construction Compact,
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Green 20 TRENCH SCHOTTKY RECTIFIER Product Summary (Per Leg) V V RRM (V) I O () F Max (V) I R Max (µ) @ +25 C @ +25 C 0 0.80 0 Description and pplications Features Low Forward Voltage Drop Excellent High
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1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary V RRM (V) I O (A) V F(MAX) (V) @ +25 C I R(MAX) (µa) @ +25 C 80 1 0.80 5 Description and Applications Features and Benefits Low Forward Voltage
More informationGreen SMC. Top View Bottom View. Part Number Case Packaging B5XXCE-13 SMC 3,000/Tape & Reel
Green 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary B520CE/B530CE/B540CE V RRM (V) I O (A) V F Max (V) I R Max (ma) 20 5.0 0.55 0.2 30 5.0 0.55 0.2 40 5.0 0.55 0.2 Features and Benefits
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Green 3A Trench SBR TRENCH SUPER BARRIER RECTIFIER Product Summary V V RRM (V) I O (A) F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 60 3 0.53 0.5 Description and Applications The device is a 3A 60V single
More informationK3N MMBT3906. Features. Mechanical Data. Ordering Information (Notes 4 & 5) Marking Information 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 MMBT3906
YM 40V PNP SMLL SIGNL TRNSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Ideal for Medium Power mplification and Switching Complementary NPN Type: MMBT3904 Totally Lead-Free
More informationGreen. Bottom View. Top View. Part Number Compliance Case Packaging SDT3A45SA-13 Commercial SMA 5,000/Tape & Reel
Green 3A TRENCH SCHOTTKY BARRIER RECTIFIER SMA Product Summary (@ T A = +25 C ) V RRM (V) I O (A) V F(MAX) (mv) I R(MAX) (µa) 45 3 480 280 Features and Benefits Low Leakage Current Soft, Fast Switching
More informationPackage Pin Out Configuration. Part Number Compliance Marking Reel Size (inch) Tape Width (mm) Quantity per Reel UMC4NQ-7 Automotive NP ,000
YM DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features Ultra-Small Surface Mount Package Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Totally Lead-Free
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0.5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary V F(MAX) (V) I R(MAX) (µa) V RRM (V) I O (A) @ +25 C @ +25 C 80 0.5 0.80 5 Description and Applications This is a single rectifier packaged
More informationGreen. Part Number Qualification Case Packaging P4SMAJXXADF-13 Commercial D-FLAT 10,000/Tape & Reel
Green 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data Packaged in the Low Profile D-FLAT to Optimize Board Space Case: D-FLAT Glass Passivated Die Construction Excellent Clamping
More informationTop View BAT54T BAT54AT BAT54CT BAT54ST
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Mechanical Data Ultra-Small Surface Mount Package Low Forward Voltage Drop Fast Switching PN Junction Guard Ring for Transient and ESD Protection Totally Lead-Free
More informationGreen T-DFN Part Number Compliance Case Packaging LBS10-13 Commercial T-DFN ,000/Tape & Reel
Green 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 1000 1 1.1 5 Description and Applications The is a surface mount glass
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging HDS20M-13 Commercial HDS 5,000/Tape & Reel
Green 2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 2 0.95 5 Features and Benefits Glass Passivated Die Construction Miniature
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Green 0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 000 0.8. 5 Description and Applications Features and Benefits Glass Passivated
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DGD2101MS8-13 DGD ,500
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage
More informationADC114YUQ. Mechanical Data. Features. Ordering Information (Notes 4 & 5) Marking Information NXX 1Y7 YM NXX YM
NXX YM NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Built-In Biasing Resistors Totally Lead-Free & Fully RoHS Compliant (Notes &
More informationGreen. Part Number Compliance Case Packaging DBF Commercial DBF 3,000/Tape & Reel
Green 3A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa),000 3.0 5 Features and Benefits Glass Passivated Die Construction Miniature Package
More informationFeatures. Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel DGD2103MS8-13 DGD2103M ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description The is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques
More informationDevice Symbol. Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BC846ASQ-7-F Automotive KNS 7 8 3,000
KNS YM 65V DUAL NPN SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV CEO
More informationPART OBSOLETE - NO ALTERNATE PART Green. Features DO-214AA
Green LOW VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 5 0.55 0.1 Description Low voltage Schottky rectifier suited for switch mode
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2304S8-13 DGD ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description Features The is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing
More informationSBR5E45P5. Features and Benefits. Product Summary A = +25 C) Description and Applications. Mechanical Data. Ordering Information (Note 4)
Green 5A SBR SUPER BARRIER RECTIFIER Product Summary (@T A = +25 C) Features and Benefits ADVANCED NEW NEW INFORMATION V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) 45 5 0.6 0.28 Description and Applications
More informationFeatures. Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DM SO-7 Standard BF ,000/Tape & Reel
2-CHANNEL LOW CAPACITANCE ESD PROTECTION ARRAY Product Summary V F (Typ) V P (Typ) C OUT (Typ) 0.8V 5V 1.5pF Description is a high-performance device suitable for protecting two high-speed channels. This
More informationGreen. SOD123F (Standard) Top View. Part Number Qualification Case Packaging US1GWF-7 AEC-Q101 SOD123F (Standard) 3,000/Tape & Reel
Green.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 400.25 Description The is a rectifier packaged in the SOD23F (Standard) package and
More informationDCX(xxxx)U. Features. Mechanical Data. Ordering Information (Note 3 & 4) SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR.
DX(xxxx)U SMALL SIGNAL OMPLEMENTARY PRE-BIASED DUAL TRANSISTOR Features Epitaxial Planar Die onstruction Built-In Biasing Resistors Surface Mount Package Suited for Automated Assembly Totally Lead-Free
More informationApplications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000
YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2005S8-13 DGD
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The is a mid-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques
More informationGreen. Features DO-214AC
Green SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 3 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD21844S14-13 DGD ,500
HALF- BRIDGE GATE DRIVER IN SO-14 Description The is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques
More informationM C C. MCAC48N10Y. Features. N-Channel Power MOSFET DFN5060. C Unless Otherwise Specified. Micro Commercial Components
omponents 736 Marilla treet Chatsworth!"# $%!"# MCC48NY Features Trench Power MV MOFET technology Very low on-resistance (ON) Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94
More information0.156(3.95) 0.151(3.85) Symbol BVDSS VGS ID -9.5 A IDM -160 A. EAS mj TSTG
M5P3Q8-HF P-hannel RoH evice Halogen Free Features - imple drive requirement - Low on-resistance - Fast switching speed Mechanical data.2(5.).89(4.8).(.25).8(.9).65(.65).57(.45) - Epoxy : UL 94- rated
More informationDGD Ordering Information (Note 4) Marking Information YYWW DGD05473 HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN
HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN3030-10 Description The is a high-frequency gate driver capable of driving N- channel MOSFETs. The floating high-side driver is rated up to 50V.
More informationFeatures. Typical Configuration ZXGD3113W6. Top View Pin-Out
SYNCHRONOUS MOSFET CONTROLLER IN Description The is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a differential amplifier detector stage and high current
More informationFeatures TO-220F-3 TO (2) TO-263-2
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD65T50S1PT DGTD65T50S1 450 per Box in Tubes (Note 5)
650V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance. Features High-Speed Switching
More informationFeatures DNC GND GND GND GATE GATE. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3108N8TC ZXGD ,500
V ACTIVE OR'ING MOSFET CONTROLLER IN SO8 Description is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
More informationFeatures DO-41 DO-15 DO-214AC
SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 60 2 0.68 0.5 Description The is a low voltage dual Schottky rectifier suited for switch mode
More informationDGD Features. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information YYWW DGD05463
HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME IN W-DFN3030-10 (Type TH) Description The is a high-frequency half-bridge gate driver capable of driving N-channel MOSFETs in a half-bridge
More informationFeatures DO-15 DO-214AC SOD-123
SCHOTTKY BARRIER RECTIFIERS Product Summary Features V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 2 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationFeatures SO-7. Typical Configuration for Low-Side -ve Supply Rail DRAIN. Top View
V ACTIVE OR'ING MOSFET CONTROLLER IN SO7 Description The is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
More informationFeatures. TO-220F-3 (Option 1) TO (2) TO TO (1)
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary Features V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 200 2x5 0.95 0.5 Description High voltage dual Schottky rectifier suited for
More informationAP4305. Description. Pin Assignments. Features. Applications. Typical Applications Circuit AP4305. A Product Line of. Diodes Incorporated
CONSTANT OLTAGE AND CONSTANT CURRENT CONTROLLER Description Pin Assignments The is a highly integrated solution for a constant voltage/constant current mode SMPS application. (Top iew) The contains one
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