Part Number Compliance Marking Reel Size (Inches) Tape Width (mm) Case Packaging D1213A-01LPQ-7B Automotive U2 7 8 X1-DFN ,000/Tape & Reel
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- Annabel Grant
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1 Product ummary WM B Min PP Max Description and pplications his new generation is designed to protect sensitive electronics from the damage due to D and to meet the stringent requirements of utomotive pplications. he combination of small size and high D surge capability makes it ideal for use in portable applications: ellular Handsets Portable lectronics omputers and Peripheral X1-DF6-2 1 HL LW P DD Y Features and Benefits (D): ir ±15k, ontact ±8k 1 hannel of D Protection Low hannel nput apacitance of.85pf ypical Low Profile Package (.53mm Max) and ltra-mall PB Footprint rea (1.8mm *.68mm Max) uitable for ompact Portable lectronics ypically sed at High peed Ports such as B 2., 1394, erial, D, HDM, P otally Lead-Free & Fully oh ompliant (otes 1 & 2) Halogen and ntimony Free. Green Device (ote 3) Qualified to -Q11 tandards for High eliability PPP apable (ote 4) Mechanical Data ase: X1-DF6-2 ase Material: Molded Plastic, "Green" Molding ompound. L Flammability lassification ating 94- Moisture ensitivity: Level 1 per J-D-2 erminals: ipdu over opper Leadframe. olderable per ML- D-22, Method 28 e4 Weight:.1 grams (pproximate) Pin 1 Bottom iew Pin 2 Device chematic rdering nformation (ote 5) Part umber ompliance Marking eel ize (nches) ape Width (mm) ase Packaging -7B utomotive X1-DF6-2 1,/ape & eel otes: 1. o purposely added lead. Fully Directive 22/95/ (oh) & 211/65/ (oh 2) compliant. 2. ee for more information about Diodes ncorporated s definitions of Halogen- and ntimony-free, "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<1ppm total Br + l) and <ppm antimony compounds. 4. utomotive products are -Q11 qualified and are PPP capable. efer to 5. For packaging details, go to our website at Marking nformation 2 = Product ype Marking ode Bar Denotes Pin 1 or athode ide op iew 1 of 5
2 P D, PW DP (mw) PK PL DG % F PK PW Maximum atings (@ = +25, unless otherwise specified.) haracteristic ymbol alue nit onditions Peak Pulse urrent PP 5 8/2μs, Per Figure 3 D Protection ontact Discharge D_ ±8 k tandard D Protection ir Discharge D_ ±15 k tandard hermal haracteristics haracteristic ymbol alue nit Package Power Dissipation (ote 6) P D 2 mw hermal esistance, Junction to mbient (ote 6) J /W perating and torage emperature ange J, G -55 to +1 lectrical haracteristics (@ = +25, unless otherwise specified.) haracteristic ymbol Min yp Max nit est onditions everse Working oltage WM 3.3 everse urrent (ote 7).1 1. μ = WM = 3.3 everse Breakdown oltage B 6. = 1m Forward oltage F F = 8m everse lamping oltage, Positive ransients L1 1. PP = 1, t p = 8/2μs everse lamping oltage, egative ransients L2-1.7 PP = -1, t p = 8/2μs Dynamic esistance DY.9 Ω = 1, t p = 8/2μs apacitance pf = 1.65, f = 1MHz otes: 6. Device mounted on F-4 PB pad layout (2oz copper) as shown on Diodes ncorporated s suggested pad layout, which can be found on our website at 7. hort duration pulse test used to minimize self-heating effect. 8. For information on the impact of Diodes ncorporated's B 2. compatible D protectors on signal integrity including eye diagram plots, please refer to 77 at the following L: ote , MB MP ( ) Figure 1 Power Derating urve , MB MP ( 癈 o ) ) Figure 2 Pulse Derating urve 2 of 5
3 , (n), L P (pf) PP, PK PL (% pp ) F, FWD (m) t, M ( s) Figure 3 Pulse Waveform ) m ( D W F, F 1, = 1 = 125 = 25 = -55 = F, FWD LG () Figure 4 ypical Forward haracteristics ) n ( = 1 = = 85 = 25 = -55 1, , LG () Figure 5 ypical everse haracteristics f = 1MHz , LG () Figure 6 ypical otal apacitance vs. everse oltage 3 of 5
4 Package utline Dimensions Please see for the latest version. 1 D b X1-DF6-2 Dim Min Max yp b D e L ll Dimensions in mm L e uggested Pad Layout Please see for the latest version. X X1 Y G Dimensions alue (in mm).7 G.3 X.4 X1 1.1 Y.7 4 of 5
5 MP DD PD MK WY F Y KD, XP MPLD, WH GD H DM, LDG, B LMD, H MPLD W F MHBLY D F F PL PP (D H QL D H LW F Y JD). Diodes ncorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes ncorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes ncorporated convey any license under its patent or trademark rights, nor the rights of others. ny ustomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes ncorporated and all the companies whose products are represented on Diodes ncorporated website, harmless against all damages. Diodes ncorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. hould ustomers purchase or use Diodes ncorporated products for any unintended or unauthorized application, ustomers shall indemnify and hold Diodes ncorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more nited tates, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more nited tates, international or foreign trademarks. his document is written in nglish but may be translated into multiple languages for reference. nly the nglish version of this document is the final and determinative format released by Diodes ncorporated. LF PP Diodes ncorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the hief xecutive fficer of Diodes ncorporated. s used herein:. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes ncorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes ncorporated. Further, ustomers must fully indemnify Diodes ncorporated and its representatives against any damages arising out of the use of Diodes ncorporated products in such safety-critical, life support devices or systems. opyright 216, Diodes ncorporated 5 of 5
Device Symbol. Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DXT651Q-13 Automotive KN ,500
6 P W U PW Description his ipolar Junction ransistor (J) is designed to meet the stringent requirements of automotive applications. Features > 6 = 3 High ontinuous ollector urrent M up to 6 Peak Pulse
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W P V V W P FM FM M299JQ MPLMY P HM M MF Product ummary evice BV ) Max Q 2V Q2-2V Max = +25.99Ω @ V = 4.5V 45m Ω @ V = 2.5V 4m.8Ω @ V =.8V 33m 2.4Ω @ V =.5V 3m.9Ω @ V = -4.5V -3m 2.4Ω @ V = -2.5V -28m
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V FM reen MPH623K3Q 6V 75 P-HL HM M MF Product ummary BV -6V ) Max Max = +25 33mΩ @ V = -V -35 4mΩ @ V = -4.5V -32 escription and pplications his MF has been designed to meet the stringent requirements
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FM FM 6 +75 -H HM M MF Product ummary B 6 ) max 5mΩ @ = 65mΩ @ = 4.5 max = +5 4 Features and Benefits ated to +75 deal for High mbient emperature nvironments % nclamped nductive witching ensures more reliable
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YWW NEW PRODUT 500V PNP HIGH PERFORMANE TRANSISTOR IN Features BV EO > -500V I = -150mA High ontinuous urrent I M = -500mA Peak Pulse urrent Totally Lead-Free & Fully RoHS ompliant (Notes 1 & 2) Halogen
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DVNCED INFORMTION SURFCE MOUNT SWITCHING DIODE RRY Features Mechanical Data Fast Switching Speed Case: High Reverse Breakdown Voltage Case Material: Molded Plastic, Green Molding Compound; Low Leakage
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NEW PODUCT Green 5 ULT-FST ECOVEY ECTIFIE PowerDI Product Summary (@T = +25 C) V M (V) I O () V F Max (V) I Max (μ) 4 5 1.185 1 Description Features and Benefits Glass Passivated Die Construction Ultra-Fast
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DVNCED NEW INFORMTION Green. SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (μ),.3 5 Description and pplications Features and Benefits Glass Passivated
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Product Summary B140Q/BQ V RRM (V) I O (A) V Max (V) I R Max (ma) T A = +25 T A = +25 40 1.0 0.5 0.5 B150Q, B160Q V RRM (V) I O (A) V Max (V) I R Max (ma) T A = +25 T A = +25 50/60 1.0 0.7 0.5 Description
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20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BV DSS 20V R DS(ON) max I D max T A = +25 C 0.99Ω @ V GS = 4.5V 750mA.2Ω @ V GS = 2.5V 680mA.8Ω @ V GS =.8V 555mA 2.4Ω @ V GS
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1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary V RRM (V) I O (A) V F(MAX) (V) @ +25 C I R(MAX) (µa) @ +25 C 80 1 0.80 5 Description and Applications Features and Benefits Low Forward Voltage
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NOT RECOMMENDED FOR NEW DESIGN USE DMN6D8L N7X N-CHNNEL ENHNCEMENT MODE MOSFET Product Summary Features and Benefits V (BR)DSS R DS(ON) max I D max T = + C 6V 6Ω @ V = V m Description This MOSFET has been
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40 1A GATE DRIE SOT363 Description is a high-speed, non-inverting single gate driver for switching MOSFETs. It can transfer up to 1A peak source/sink current into the gate for effective charging and discharging
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Green 20 TRENCH SCHOTTKY RECTIFIER Product Summary (Per Leg) V V RRM (V) I O () F Max (V) I R Max (µ) @ +25 C @ +25 C 0 0.80 0 Description and pplications Features Low Forward Voltage Drop Excellent High
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SCHOTTKY BARRIER RECTIFIERS Product Summary Features V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 2 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
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N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V (BR)DSS 2V Description R DS(ON) max 25mΩ @ V GS = 4.5V I D max T A = +25 C 9A 29mΩ @ V GS = 2.5V 5.5A 37mΩ @ V GS = 1.8V 4.8A This MOSFET is
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Green.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 400.25 Description The is a rectifier packaged in the SOD23F (Standard) package and
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YM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 3V R DS(ON) Max I D Max T A = +5 C 3mΩ @ V GS = V 6.A 4mΩ @ V GS = 4.5V 5.A Description and Applications This MOSFET is designed to minimize
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4V 75 C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 4V R DS(ON) max I D max T C = +25 C 5mΩ @ V GS = V 43.6A 25mΩ @ V GS = 4.5V 33A Description and Applications This MOSFET is designed
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6V 75 C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 6V R DS(ON) max I D max T C = +25 C mω @ V GS = V 47.6A 6mΩ @ V GS = 4.5V 39.5A Description and Applications This MOSFET is designed
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2-CHANNEL LOW CAPACITANCE ESD PROTECTION ARRAY Product Summary V F (Typ) V P (Typ) C OUT (Typ) 0.8V 5V 1.5pF Description is a high-performance device suitable for protecting two high-speed channels. This
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Green 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary B520CE/B530CE/B540CE V RRM (V) I O (A) V F Max (V) I R Max (ma) 20 5.0 0.55 0.2 30 5.0 0.55 0.2 40 5.0 0.55 0.2 Features and Benefits
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0.5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary V F(MAX) (V) I R(MAX) (µa) V RRM (V) I O (A) @ +25 C @ +25 C 80 0.5 0.80 5 Description and Applications This is a single rectifier packaged
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DM325LSD 3V OMPLEMENTRY ENHNEMENT MODE MOSFET DVNED INFORMTION Product Summary Device V (BR)DSS R DS(ON) max Package N-hannel 3V P-hannel -3V Description MX 2mΩ @ V GS = 1V 8.5 32mΩ @ V GS = 4.5V 7. SO-8
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SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 60 2 0.68 0.5 Description The is a low voltage dual Schottky rectifier suited for switch mode
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging MB10S-13 Commercial MBS 3,000/Tape & Reel
Green 0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 000 0.8. 5 Description and Applications Features and Benefits Glass Passivated
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KNS YM 65V DUAL NPN SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV CEO
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SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Mechanical Data Ultra-Small Surface Mount Package Low Forward Voltage Drop Fast Switching PN Junction Guard Ring for Transient and ESD Protection Totally Lead-Free
More informationSBR5E45P5. Features and Benefits. Product Summary A = +25 C) Description and Applications. Mechanical Data. Ordering Information (Note 4)
Green 5A SBR SUPER BARRIER RECTIFIER Product Summary (@T A = +25 C) Features and Benefits ADVANCED NEW NEW INFORMATION V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) 45 5 0.6 0.28 Description and Applications
More informationDMNH6021SPDQ. Product Summary. Features and Benefits ADVANCE INFORMATION ADVANCED INFORMATION. Description and Applications.
DVNCE INFORMTION DVNCED INFORMTION Product Summary V (BR)DSS 6V R DS(ON) Max 2mΩ @ V = V 4mΩ @ V = 4.V I D Max T C = +2 C 32 2 6V 7 C DUL N-CHNNEL ENHNCEMENT MODE MOSFET PowerDI Features and Benefits Rated
More informationPackage Pin Out Configuration. Part Number Compliance Marking Reel Size (inch) Tape Width (mm) Quantity per Reel UMC4NQ-7 Automotive NP ,000
YM DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features Ultra-Small Surface Mount Package Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Totally Lead-Free
More informationDCX(xxxx)U. Features. Mechanical Data. Ordering Information (Note 3 & 4) SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR.
DX(xxxx)U SMALL SIGNAL OMPLEMENTARY PRE-BIASED DUAL TRANSISTOR Features Epitaxial Planar Die onstruction Built-In Biasing Resistors Surface Mount Package Suited for Automated Assembly Totally Lead-Free
More informationK3N MMBT3906. Features. Mechanical Data. Ordering Information (Notes 4 & 5) Marking Information 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 MMBT3906
YM 40V PNP SMLL SIGNL TRNSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Ideal for Medium Power mplification and Switching Complementary NPN Type: MMBT3904 Totally Lead-Free
More informationGreen. Features. Equivalent Circuit. Top View Pin Out Configuration. Part Number Case Packaging DMTH10H005SCT TO220AB 50 Pieces/Tube
Green V +75 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary R DS(ON) I D T C = +25 C V 5mΩ @V GS = V 4A BV DSS Description This new generation MOSFET features low on-resistance and fast switching,
More informationFeatures. Bottom View. Top View Bottom View
YM ADVANCED INFORMATION 2V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 2V Description R DS(ON) max I D max T A = +25 C 25mΩ @ V GS = 4.5V 6.5A 31mΩ @ V GS = 2.5V 5.9A 6mΩ @ V GS = 1.8V 4.5A
More informationGreen. Part Number Case Packaging DMN3013LFG-7 PowerDI (Type D) 1000 / Tape & Reel DMN3013LFG-13 PowerDI (Type D) 3000 / Tape & Reel
YYWW Green 3V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type D) Product Summary Device BV DSS R DS(ON) Max Q 3V 4.3m @ V GS = 8V, I D = 4A Q2 3V 4.3m @ V GS = 8V, I D = 4A Description
More informationADC114YUQ. Mechanical Data. Features. Ordering Information (Notes 4 & 5) Marking Information NXX 1Y7 YM NXX YM
NXX YM NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Built-In Biasing Resistors Totally Lead-Free & Fully RoHS Compliant (Notes &
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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging HDS20M-13 Commercial HDS 5,000/Tape & Reel
Green 2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 2 0.95 5 Features and Benefits Glass Passivated Die Construction Miniature
More informationTop View. Part Number Compliance Case Packaging DMN6066SSD-13 Commercial SO-8 2,500/Tape & Reel DMN6066SSDQ-13 Automotive SO-8 2,500/Tape & Reel
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V (BR)DSS 60V R DS(on) T A = +25 C 66mΩ @ = V 4.4A 97mΩ @ = 4.5V 3.6A Low on-resistance Fast switching speed 0% Unclamped
More informationGreen. Part Number Compliance Case Packaging DBF Commercial DBF 3,000/Tape & Reel
Green 3A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa),000 3.0 5 Features and Benefits Glass Passivated Die Construction Miniature Package
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DGD2101MS8-13 DGD ,500
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage
More informationGreen. Features 90A 90A. PowerDI S. Pin1. Top View Pin Configuration. Part Number Case Packaging DMT4004LPS-13 PowerDI ,500 / Tape & Reel
Product ummary Green 4V N-CHANNEL ENHANCEMENT MOE MOFET POWERI Features BV 4V R (ON) Max 2.5mΩ @ V G = V 4mΩ @ V G = 4.5V I T C = +25 C 9A 9A % Unclamped Inductive witching ensures more reliable and robust
More informationFeatures. Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel DGD2103MS8-13 DGD2103M ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description The is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques
More informationG2 D1 DMC1028UFDB. Features. Product Summary. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information
YM Product Summary Device BV DSS R DS(ON) max Q N-Channel Q2 P-Channel Description 2V -2V I D max T A = +25 C 25mΩ @ V = 4.5V.A 3mΩ @ V = 3.3V 5.5A 32mΩ @ V = 2.5V 5.3A 8mΩ @ V = -4.5V -3.4A 9mΩ @ V =
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2304S8-13 DGD ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description Features The is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing
More informationFeatures -3.1A -2.0A. Pin Configuration
DMC238LVT COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Features Device V (BR)DSS R DS(ON) Q 2V Q2-2V Description 35mΩ @ V GS = 4.5V 4.5 56mΩ @ V GS =.8V 3.5 74mΩ @ V GS = -4.5V 68mΩ @ V GS =
More informationFeatures. TO-220F-3 (Option 1) TO (2) TO TO (1)
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary Features V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 200 2x5 0.95 0.5 Description High voltage dual Schottky rectifier suited for
More informationFeatures. Bottom View Equivalent Circuit. Top View Pin Out Configuration. Part Number Case Packaging DMN80H2D0SCTI ITO220AB (Type TH) 50 pieces/tube
N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS R DS(ON) Package 8V Description.Ω@V GS = V ITOAB (Type TH) I D T C = +5 C This new generation MOSFET features low on-resistance and fast switching,
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2005S8-13 DGD
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The is a mid-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques
More information74LVC2G00. Pin Assignments. Description NEW PRODUCT. Features. Applications DUAL 2-INPUT NAND GATE 74LVC2G00. (Top View) VCC GND
DUAL 2-INPUT NAND GATE Description Pin Assignments The is a dual, two input NAND gate. Both gates have push-pull outputs designed for operation over a power supply range of 1.65 to 5.5. The device is fully
More information74HCT138. Description. Pin Assignments. Features. Applications 3 TO 8 LINE DECODER DEMULTIPLEXER 74HCT138
3 TO 8 LINE DECODER DEMULTIPLEXER Description Pin Assignments The is a high speed CMOS device that is designed to be pin compatable with 74LS low power Schottky types. The device accepts a three bit binary
More information74HCT164. Pin Assignments. Description NEW PRODUCT. Applications. Features. ( Top View ) Vcc Q7 Q6 DSA DSB Q0 Q5 Q4 MR Q1 Q2 Q3 GND
8-BIT PAALLEL-OUT SEIAL SHIFT EGISTES Description Pin Assignments The is a serial input 8-bit edge-triggered shift register that has outputs from each of eight stages. SEIAL DATA INPUT PINS ( Top View
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YM AVANCE INFORMATION 3V N-CHANNEL ENHANCEMENT MOE MOSFET Product Summary V (BR)SS 3V escription R S(ON) max I max T A = +25 C 17mΩ @ V GS = 1V 8.4A 28mΩ @ V GS = 4.5V 6.8A This new generation MOSFET is
More informationApplications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000
YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD21844S14-13 DGD ,500
HALF- BRIDGE GATE DRIVER IN SO-14 Description The is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques
More informationTop View. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4034SSS-13 N4034SS ,500
40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS 40V R DS(on) T A = 25 C 34mΩ @ = V 7.2A 59mΩ @ = 4.5V 5.5A Description and Applications This MOSFET has been designed to minimize the on-state
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HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN3030-10 Description The is a high-frequency gate driver capable of driving N- channel MOSFETs. The floating high-side driver is rated up to 50V.
More informationFeatures. Typical Configuration ZXGD3113W6. Top View Pin-Out
SYNCHRONOUS MOSFET CONTROLLER IN Description The is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a differential amplifier detector stage and high current
More informationDGD Features. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information YYWW DGD05463
HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME IN W-DFN3030-10 (Type TH) Description The is a high-frequency half-bridge gate driver capable of driving N-channel MOSFETs in a half-bridge
More informationBattery-powered Equipment Laptop, Palmtops, Notebook Computers Portable Information Appliances SOT25 (WR Package)
WIDE INPUT VOLTAGE RANGE, 150mA ULDO REGULATOR Description Pin Assignments The series is a positive voltage regulator IC. (Top View) The has features of wide input voltage range, high accuracy, low dropout
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DUAL BUFFERS Description The Advanced Ultra Low Power (AUP) CMOS logic family is designed for low power and extended battery life in portable applications. The is composed of two buffers with standard
More informationGreen. Pin1. Top View Pin Configuration. Part Number Case Packaging DMTH3004LPS-13 POWERDI ,500/Tape & Reel
NEW PROUCT AVANCE INFORMATION Product Summary BV SS 3V R S(ON) Max 3.8mΩ @ V GS = V 6mΩ @ V GS = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOSFET is designed to minimize the on-state
More informationPart Number Case Packaging SDM05U20CSP-7 X3-WLB ,000/Reel
ADVANCED 0.5A SCHOTTKY BARRIER RECTIFER CHI SCALE ACKAGE roduct Summary V RRM (V) I O (A) V F Max (V) I R Max (µa) 20 0.5 0.43 55 Description The is a 20-Volt 0.5A Schottky barrier rectifier that is optimized
More informationPart Number Case Packaging DMN2024U-7 SOT /Tape & Reel DMN2024U-13 SOT23 10,000/Tape & Reel
N-CHNNEL ENHNCEMENT MOE MOSFET Product Summary Features and Benefits VNCE INFORMTION V (BR)SS 2V R S(ON) Max I Max T = +25 C 25mΩ @ V = 4.5V 6.8 29mΩ @ V = 2.5V 5.5 escription and pplications This MOSFET
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QUADRUPLE 2-INPUT AND GATES Description Pin Assignments The provides four independent 2-input AND gates. The device is designed for operation with a power supply range of 1.65V to 5.5V. The inputs are
More informationI D T A = 25 C -2.8A -2.3A. Part Number Case Packaging DMG6602SVT-7 TSOT / Tape & Reel
DMGSVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V (BR)DSS R DS(on) Q 3V Q -3V I D mω @ V GS = V 3.A mω @ V GS =.5V.7A 95mΩ @ V GS = -V mω @ V GS = -.5V Description
More informationFeatures. Top View. Part Number Case Packaging DMN3008SCP10-7 X4-DSN /Tape & Reel
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary BV SSS R SS(ON) MAX I S T A = +25 C 30V 7.8mΩ @ V GS =V 14.6A Description This new generation MOSFET has been designed to minimize the on-state resistance
More informationAP4312Q. Pin Assignments. Description NEW PRODUCT. Applications. Features CONSTANT VOLTAGE AND CONSTANT CURRENT CONTROLLER AP4312Q SOT26
CONSTANT OLTAGE AND CONSTANT CURRENT CONTROLLER Description Pin Assignments is an Automotive Grade product that is AEC-Q1 grade 1 qualified. It is a highly integrated solution for the constant voltage/constant
More informationAP4305. Description. Pin Assignments. Features. Applications. Typical Applications Circuit AP4305. A Product Line of. Diodes Incorporated
CONSTANT OLTAGE AND CONSTANT CURRENT CONTROLLER Description Pin Assignments The is a highly integrated solution for a constant voltage/constant current mode SMPS application. (Top iew) The contains one
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