P-900 IRF7809AV N-Channel Application-Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications S S 1 2 8 7 A escription This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency C-C converters that power the latest generation of microprocessors. SO-8 S G 3 6 4 5 Top View The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including R S(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809AV offers particulary low R S(on) and high Cdv/dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. EVICE CHARACTERISTICS IRF7809AV R S(on) 7.0mΩ Q G 41nC Q sw 14nC Q oss 30nC Absolute Maximum Ratings Parameter Symbol IRF7809A V Units rain-source Voltage V S 30 V Gate-Source Voltage V GS ±12 Continuous rain or Source T A = 25 C I 13.3 Current (V GS 4.5V) T L = 90 C 14.6 A Pulsed rain Current I M 0 Power issipation T A = 25 C P 2.5 W T L = 90 C 3.0 Junction & Storage Temperature Range T J, T STG 55 to 150 C Continuous Source Current (Body iode) I S 2.5 A Pulsed Source Current I SM 50 Thermal Resistance Parameter Max. Units Maximum Junction-to-Ambientƒ R θja 50 C/W Maximum Junction-to-Lead R θjl 20 C/W /26/00
Electrical Characteristics Parameter Min Typ Max Units Conditions rain-to-source BV SS 30 V V GS = 0V, I = 250µA Breakdown Voltage Static rain-source R S(on) 7.0 9.0 mω V GS = 4.5V, I = 15A on Resistance Gate Threshold Voltage V GS(th) 1.0 V V S = V GS,I = 250µA rain-source Leakage I SS 30 V S = 24V, V GS = 0 Current Current* 150 µa V S = 24V, V GS = 0, Tj = 0 C Gate-Source Leakage I GSS ±0 na V GS = ±12V Current* Total Gate Chg Cont FET Q G 41 62 V GS =5V, I =15A, V S =20V Total Gate Chg Sync FET Q G 36 54 V GS = 5V, V S < 0mV Pre-Vth Q GS1 7.0 V S = 20V, I = 15A Gate-Source Charge Post-Vth Q GS2 2.3 nc Gate-Source Charge Gate to rain Charge Q G 12 I =15A, V S =16V Switch Chg(Q gs2 + Q gd ) Q sw 14 21 Output Charge* Q oss 30 45 V S = 16V, V GS = 0 Gate Resistance R G 1.5 Ω Turn-on elay Time t d (on) 14 V = 16V, I = 15A Rise Time t r 36 ns V GS = 5V Turn-off elay Time t d (off) 96 Clamped Inductive Load Fall Time t f Input Capacitance C iss 3780 Output Capacitance C oss 60 pf V S = 16V, V GS = 0 Reverse Transfer Capacitance C rss 130 Source-rain Rating & Characteristics Parameter Min Typ Max Units Conditions iode Forward V S 1.3 V I S = 15A, V GS = 0V Voltage* Reverse Recovery Charge Q rr 120 nc di/dt ~ 700A/µs V S = 16V, V GS = 0V, I S = 15A Reverse Recovery Q rr(s) 150 nc di/dt = 700A/µs Charge (with Parallel (with BQ040) Schottky) V S = 16V, V GS = 0V, I S = 15A Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 µs; duty cycle 2%. ƒ When mounted on 1 inch square copper board, t < sec. Typ = measured - Q oss Typical values measured at V GS = 4.5V, I F = 15A. 2 www.irf.com
I, rain-to-source Current (A) 00 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 25 C 0.1 1 0 V S, rain-to-source Voltage (V) I, rain-to-source Current (A) 00 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 150 C 0.1 1 0 V S, rain-to-source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 00 2.0 I = 15A I, rain-to-source Current (A) 0 T J = 150 C T J = 25 C V S= 15V 20µs PULSE WITH 2.4 2.6 2.8 3.0 3.2 3.4 V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 1.5 1.0 0.5 V GS= V 0.0-60 -40-20 0 20 40 60 80 0 120 140 160 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
C, Capacitance (pf) 6000 5000 4000 3000 2000 00 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTE V GS, Gate-to-Source Voltage (V) 8 6 4 2 I = 15A V S = 20V C rss 0 1 0 V S, rain-to-source Voltage (V) 0 0 20 30 40 50 60 70 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current (A) 00 0 1 T J = 150 C T J = 25 C V GS = 0 V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 V S,Source-to-rain Voltage (V) I, rain Current (A) 00 0 OPERATION IN THIS AREA LIMITE BY R S(on) us 0us 1ms T = 25 C ms A TJ = 150 C Single Pulse 1 0.1 1 0 V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
16 V S R I, rain Current (A) 12 8 4 Fig a. Switching Time Test Circuit V S 90% R G V GS V Pulse Width 1 µs uty Factor 0.1 %.U.T. + - V 0 25 50 75 0 125 150 T, Case Temperature ( C C) Fig 9. Maximum rain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 0 Thermal Response (Z thja ) 1 0.1 = 0.50 0.20 0. 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. uty factor = t 1 / t 2 2. Peak T J = P M x Z thja + TA 0.01 0.00001 0.0001 0.001 0.01 0.1 1 0 t 1, Rectangular Pulse uration (sec) PM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5
R S (on), rain-to-source On Resistance ( Ω) R S(on), rain-to -Source On Resistance ( Ω) IRF7809AV 0.008 0.012 V GS = 4.5V 0.007 0.0 0.006 V GS = V 0.008 I = 15A 0.005 0 20 40 60 80 0 120 I, rain Current (A) 0.006 2.5 3.0 3.5 4.0 4.5 V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. rain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as.u.t. 12V I AS V GS.2µF 50KΩ 3mA.3µF.U.T. I G I Current Sampling Resistors + V - S V GS Fig 13a&b. Basic Gate Charge Test Circuit and Waveform tp V (B R)SS R G V S 20V V G tp Q GS L.U.T I AS 0.01Ω Q G Q G Charge 15V RIVER + - V A E AS, Single Pulse Avalanche Energy (mj) 500 400 300 200 0 TOP BOTTOM I 6.7A 9.5A 15A 0 25 50 75 0 125 150 Starting T, Junction Temperature ( J C) Fig 14a&b. Unclamped Inductive Test circuit Fig 14c. Maximum Avalanche Energy and Waveforms Vs. rain Current 6 www.irf.com
SO-8 Package etails 5 E - A - - B - 5 8 7 6 5 1 2 3 4 H 0.25 (.0) M A M e 6X θ e1 θ A - C - 0. (.004) A1 B 8X 0.25 (.0) M C A S B S NOTES: 1. IMENSIONING AN TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING IMENSION : INCH. 3. IM ENSIONS ARE SHOW N IN MILLIMETERS (INCHES). 4. OUTLINE CONFORM S TO JEEC OUTLINE MS-012AA. L 8X K x 45 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS MOL PROTRUSIONS NOT TO EXCEE 0.25 (.006). 6 IMENSIONS IS THE LENGTH OF LEA FOR SOLERING TO A SUBSTRATE.. 6 C 8X IM INCH ES M ILLIMET ERS MIN MAX MIN M AX A.0532.0688 1.35 1.75 A1.0040.0098 0. 0.25 B.014.018 0.36 0.46 C.0075.0098 0.19 0.25.189.196 4.80 4.98 E.150.157 3.81 3.99 e.050 BASIC 1.27 BASIC e1.025 BASIC 0.635 BASIC H.2284.2440 5.80 6.20 K.011.019 0.28 0.48 L 0.16.050 0.41 1.27 θ 0 8 0 8 RECOMMENE FOOTPRINT 0.72 (.028 ) 8X 6.46 (.255 ) 1.27 (.050 ) 3X 1.78 (.070) 8X SO-8 Part Marking www.irf.com 7
SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 (.484 ) 11.7 (.461 ) 8.1 (.318 ) 7.9 (.312 ) FEE IRECTION NOTES: 1. CO N TRO LLING IM E NSIO N : M ILLIM ETER. 2. ALL IM EN SIO N S ARE SHO W N IN M ILLIM E TE RS (IN CH ES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. NOTES : 1. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 14.40 (.566 ) 12.40 (.488 ) IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANAA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite. 207, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886-(0)2 2377 9936 ata and specifications subject to change without notice. /00 8 www.irf.com
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