DIMDDM17 DIMDDM17 Dual Switch IGBT Module Replaces September 1, version DS54492.3 DS54493. March 2 FETURES 1µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with ln Substrates KEY PRMETERS CES 17 CE(sat) * (typ) 2.7 I C (max) I C(PK) (max) 8 *(measured at the power busbars and not the auxiliary terminals) PPLICTIONS Inverters 5(E 1 ) 1(E1) 2(C2) 12(C 2 ) Motor Controllers Traction Drives 6(G 1 ) 11(G 2 ) The Powerline range of modules includes half bridge, chopper, dual and single switch configuratio covering voltages from 6 to 33 and currents up to 2. 7(C 1 ) 3(C1) 4(E2) 1(E 2 ) The DIMDDM17 is a dual switch 17, n channel enhancement mode, iulated gate bipolar traistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSO) plus full 1µs short circuit withstand. This module is optimised for traction drives and other applicatio requiring high thermal cycling capability. Fig. 1 Dual switch circuit diagram The module incorporates an electrically isolated base plate and low inductance cotruction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMTION 7 5 6 8 3 1 Order s: DIMDDM17 Note: When ordering, please use the whole part number. 12 9 11 4 2 1 Outline type code: D (See package details for further information) Fig. 2 Electrical connectio (not to scale) Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures. 1/1
DIMDDM17 BSOLUTE MXIMUM RTINGS PER RM Stresses above those listed under 'bsolute Maximum Ratings' may cause permanent damage to the device. In extreme conditio, as with all semiconductors, this may include potentially hazardous rupture of the package. ppropriate safety precautio should always be followed. Exposure to bsolute Maximum Ratings may affect device reliability. = 25 C unless stated otherwise Symbol Parameter Test Conditio Max. Units CES Collectoremitter voltage GE = 17 GES Gateemitter voltage ±2 I C Continuous collector current = 75 C I C(PK) Peak collector current 1ms, = 15 C 8 P max Max. traistor power dissipation = 25 C, T j = 15 C 347 W I 2 t Diode I 2 t value R =, t p = 1ms, T vj = 125 C 3 k 2 s isol Isolation voltage per module Commoned terminals to base plate. C RMS, 1 min, 5Hz Q PD Partial discharge per module IEC1287. 1 = 15, 2 = 1, 5Hz RMS 1 PC 2/1 Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures.
DIMDDM17 THERML ND MECHNICL RTINGS Internal iulation material: ln Baseplate material: lsic Creepage distance: 2mm Clearance: 1mm CTI (Critical Tracking Index): 175 Symbol Parameter Test Conditio Min. Typ. Max. Units R th(jc) Thermal resistance traistor (per arm) Continuous dissipation 36 C/kW junction to case R th(jc) Thermal resistance diode (per arm) Continuous dissipation 8 C/kW junction to case R th(ch) Thermal resistance case to heatsink Mounting torque 5Nm 8 C/kW (per module) (with mounting grease) T j Junction temperature Traistor 15 C Diode 125 C T stg Storage temperature range 4 125 C Screw torque Mounting M6 5 Nm Electrical connectio M4 2 Nm Electrical connectio M8 1 Nm Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures. 3/1
DIMDDM17 ELECTRICL CHRCTERISTICS = 25 C unless stated otherwise. Symbol Parameter Test Conditio Min. Typ. Max. Units I CES Collector cutoff current GE =, CE = CES 1 m GE =, CE = CES, = 125 C 12 m I GES Gate leakage current GE = ±2, CE = 2 µ GE(TH) Gate threshold voltage I C = 2m, GE = CE 4.5 5.5 6.5 CE(sat) Collectoremitter saturation voltage GE = 15, I C = 2.7 3.2 GE = 15, I C =,, = 125 C 3.4 4. I F Diode forward current DC I FM Diode maximum forward current t p = 1ms 8 F Diode forward voltage I F = 2.2 2.5 I F =, = 125 C 2.3 2.6 C ies Input capacitance CE = 25, GE =, f = 1MHz 3 nf L M Module inductance per arm 2 nh R INT Internal traistor resistance per arm.27 mω SC Data Short circuit. I SC T j = 125 C, CC =, I 1 185 t p 1µs, CE(max) = CES L*. di/dt I 2 16 IEC 67479 Note: Measured at the power busbars and not the auxiliary terminals) * L is the circuit inductance + L M 4/1 Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures.
DIMDDM17 ELECTRICL CHRCTERISTICS = 25 C unless stated otherwise Symbol Parameter Test Conditio Min. Typ. Max. Units t d(off) Turnoff delay time I C = 115 t f Fall time GE = ±15 E OFF Turnoff energy loss CE = 9 12 t d(on) Turnon delay time R G(ON) = R G(OFF) = 4.7Ω 25 t r Rise time L ~ nh 25 E ON Turnon energy loss 15 Q g Gate charge 4.5 µc Q rr Diode reverse recovery charge I F =, R = 9, µc I rr Diode reverse current di F /dt = 3/µs 23 E REC Diode reverse recovery energy 7 = 125 C unless stated otherwise Symbol Parameter Test Conditio Min. Typ. Max. Units t d(off) Turnoff delay time I C = 1 t f Fall time GE = ±15 13 E OFF Turnoff energy loss CE = 9 18 t d(on) Turnon delay time R G(ON) = R G(OFF) = 4.7Ω t r Rise time L ~ nh 25 E ON Turnon energy loss 17 Q rr Diode reverse recovery charge I F =, R = 9, 17 µc I rr Diode reverse current di F /dt = 25/µs 27 E REC Diode reverse recovery energy Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures. 5/1
DIMDDM17 TYPICL CHRCTERISTICS 9 8 7 Common emitter. = 25 C ce is measured at power busbars and not the auxiliary terminals 9 8 7 Common emitter. = 125 C ce is measured at power busbars and not the auxiliary terminals Collector current, I c () 6 5 3 Collector current, I c () 6 5 3 GE = 2 15 12 1.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Collectoremitter voltage, ce () GE = 2 15 12 1.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Collectoremitter voltage, ce () Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics 175 Conditio: ce = 9 T c = 125 C R g = 4.7Ω Conditio: ce = 9 I C = T c = 125 C Switching energy () 15 125 75 5 Switching energy, E sw () 3 25 E off E on Erec 3 5 Collector current, I C () Fig. 5 Typical switching energy vs collector current E off E on Erec 4 8 12 16 Gate Resistance, R g (Ohms) Fig. 6 Typical switching energy vs gate resistance 6/1 Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures.
DIMDDM17 9 8 7 F is measured at power busbars and not the auxiliary terminals T j = 25 C 8 7 Chip Foward current, I F () 6 5 3 T j = 125 C Collector current, I C () 6 5 3 Module.5 1. 1.5 2. 2.5 3. 3.5 Foward voltage, F () Fig. 7 Diode typical forward characteristics Conditio: = 125 C, ge = 15, R g(off) = 4.7ohms 6 8 1 1 16 18 Collector emitter voltage, ce () Fig. 8 Reverse bias safe operating area 35 Reverse current, I R () 3 25 15 Collector current, I C () 1 I C(max) DC t p = 5µs t p = µs t p = 1 ms 1 5 T j = 125 C 8 1 16 Reverse voltage, R () Fig. 9 Diode reverse bias safe operating area T vj = 125 C, = 68 C.1 1 1 Collectoremitter voltage, ce () Fig. 1 Forward bias safe operating area Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures. 7/1
DIMDDM17 Diode 7 Traient thermal impedance, Z th (jc) ( C/kW ) 1 Traistor 1 2 3 4 IGBT R i ( C/KW).8782 6.3874 8.293 2.4712 τ i (ms).45 2.8869 21.7141 152.6381 Diode R i ( C/KW) 3.1224 11.4852 13.998 51.2136 τ i (ms).63516 1.4746 13.9664 111.7517 1.1.1.1 1 1 Pulse width, t p (s) DC collector current, I C () 6 5 3 2 4 6 8 12 14 16 Case temperature, ( C) Fig. 13 Traient thermal impedance Fig. 14 DC current rating vs case temperature 8/1 Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures.
DIMDDM17 PCKGE DETILS For further package information, please visit our website or contact Customer Services. ll dimeio in mm, unless stated otherwise. DO NOT SCLE. 62 15 15 62 13 5 6 26 18 16 24 7 12 9 8 3 4 1 2 6x M4 4x M8 38 28 31.5 43.3 11.85 57 57 65 65 13 11 1 14 11.5 35 2 6x Ø7 5 14 Main Terminal screw plastic hole depth (M8) = 16.8 ±.3 uxiliary and Gate pin plastic hole depth (M4) = 9 ±.3 Copper terminal thickness, Main Terminal pi = 1.5 ±.1 Copper terminal thickness, uxiliary and Gate pin =.9 ±.1 Nominal weight: 15g Module outline type code: D Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures. 9/1
DIMDDM17 POWER SSEMBLY CPBILITY The Power ssembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an exteive range of air and liquid cooled assemblies covering the full range of circuit desig in general use today. The ssembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CD methods our team of design and applicatio engineers aim to provide the Power ssembly Complete Solution (PCs). HETSINKS The Power ssembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http:// email: power_solutio@dynexsemi.com HEDQURTERS OPERTIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolhire. LN6 3LF. United Kingdom. Tel: 44()152255 Fax: 44()1522555 CUSTOMER SERICE Tel: +44 ()1522 52753 / 5291. Fax: +44 ()1522 52 SLES OFFICES Benelux, Italy & Switzerland: Tel: +33 ()1 64 66 42 17. Fax: +33 ()1 64 66 42 19. France & Spain: Tel: +33 ()2 47 55 75 52. Fax: +33 ()2 47 55 75 59. Germany, Northern Europe & Rest Of World: Tel: +44 ()1522 52753 / 5291. Fax: +44 ()1522 52 North merica: Tel: (613) 723735. Fax: (613) 7231518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 73335. Fax: (949) 7332986. These offices are supported by Representatives and Distributors in many countries worldwide. Dynex Semiconductor 2 Publication No. DS54493 Issue No. 3. March 2 TECHNICL DOCUMENTTION NOT FOR RESLE. PRODUCED IN UNITED KINGDOM Datasheet nnotatio: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotatio are as follows: Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. dvance Information: The product design is complete and final characterisation for volume production is well in hand. No nnotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not cotitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's respoibility to fully determine the performance and suitability of any equipment using such information and to eure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. ll products and materials are sold and services provided subject to the Company's conditio of sale, which are available on request. ll brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 1/1 Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures.