Si Photodiodes. Lineup of Si photodiodes for UV to near IR, radiation. Selection guide - April element Si photodiode array S

Transcription

1 Selection guide - April 218 Si diodes Lineup of Si photodiodes for UV to near IR, radiation CSP type Si photodiode S element Si photodiode array S Surface mount type Si PIN photodiode S1993-2CT

2 S i P h o t o d i o d e s Si diodes Lineup of Si photodiodes for UV to near IR, radiation

3 Contents s 5 Application examples 8 Si photodiodes for precision photometry 9 For UV to near IR 9 For UV to near IR (IR sensitivity suppressed type) 11 For UV monitor 12 For visible range to near IR 13 Si photodiodes for general photometry/visible range 15 For visible range 15 For visible range to near IR 16 High-speed response Si PIN photodiodes 17 Cutoff frequency: 1 GHz or more 17 Cutoff frequency: 1 MHz to less than 1 GHz 18 Cutoff frequency: 1 MHz to less than 1 MHz 19 Multi-element type Si photodiodes 21 Segmented type Si PIN photodiodes 21 One-dimensional photodiode arrays (UV to near IR: UV sensitivity enhanced type) 22 Surface mount type Si photodiodes 23 High-speed response Si PIN photodiodes 23 Segmented type Si photodiodes 23 Small package type Si photodiodes 24 Small package type Si PIN photodiodes 24 Si photodiodes with preamp, TE-cooled type Si photodiodes 25 Si photodiodes with preamp for measurement 25 TE-cooled type Si photodiodes 26 Si photodiodes for X-ray detection 27 Si photodiodes with scintillator 27 Large area Si PIN photodiodes 29 Special application Si photodiodes 31 RGB color sensors 31 Violet/blue sensitivity enhanced type 33 For VUV (vacuum ultraviolet) monitor 34 For VUV detection (high reliability type) 34 For monochromatic light detection 35 For YAG laser detection 35 Infrared sensitivity enhanced type 36 For electron beam detector 36 CSP type 37 PWB package with leads type 37 Related products of Si photodiode 38 RGB color sensor modules 38 Color sensor evaluation circuit 38 Driver circuit for Si photodiode array 39 diode modules 39 Signal processing unit for photodiode module 39 sensor amplifier 4 Charge amplifier 41 Description of terms 42 Principle of operation, equivalent circuit 43 Application circuit examples 44

4 Si photodiodes diodes are semiconductor light sensors that generate a current or voltage when the P-N junction in the semiconductor is illuminated by light. The term photodiode can be broadly defined to include even solar batteries, but it usually refers to sensors used to detect the intensity of light. diodes can be classified by function and construction as follows: Si photodiode Si PIN photodiode Si APD (avalanche photodiode) All of these types provide the following features and are widely used for the detection of the presence, intensity and color of light. Excellent linearity with respect to incident light Low noise Wide spectral response range Mechanically rugged Compact and lightweight Long life Si photodiodes manufactured utilizing our unique semiconductor process technologies cover a broad spectral range from the near infrared to ultraviolet and even to high-energy regions. They also feature high-speed response, high sensitivity and low noise. Si photodiodes are used in a wide range of applications including medical and analytical fields, scientific measurements, optical communications and general electronic products. Si photodiodes are available in various packages such as metal, ceramic and plastic packages as well as in surface mount types. We also offer custom-designed devices to meet special needs. Hamamatsu Si photodiodes Si photodiode Si PIN photodiode Type Feature Product example Multi-element type Si photodiode Si photodiode with preamp, TE-cooled type Si photodiode Si photodiode for X-ray detection Si APD* Related product of Si photodiode * Si APD is not listed in this catalogue. Featuring high sensitivity and low dark current, these Si photodiodes are specifically designed for precision photometry and general photometry/visible range. For UV to near IR For visible range to near IR For visible range RGB color sensor For monochromatic light detection For VUV (vacuum ultraviolet) detection For electron beam detector Infrared sensitivity enhanced type Si PIN photodiodes delivering high-speed response when Cutoff frequency: 1 GHz or more operated with a reverse bias are widely used for optical Cutoff frequency: 1 MHz to less than 1 GHz Cutoff frequency: 1 MHz to less than 1 MHz communications and optical disk pickup, etc. For YAG laser detection Si photodiode arrays consist of multiple elements of the same size, formed at an equal spacing in one package. These Si photodiode arrays are used in a wide range of Segment type applications such as laser beam position detection and One-dimensional type spectrophotometry. Si photodiodes with preamp incorporate a photodiode and a pre-amplifier chip into the same package. Since For analytical and measurement TE-cooled type Si photodiodes include TE-cooler in a instrument package, they achieve excellent S/N. These detectors are comprised of a Si photodiode coupled to a scintillator. These detectors are used for With scintillator X-ray baggage inspection and non-destructive inspection. Large area Si PIN photodiodes Si APDs are high-speed, high sensitivity photodiodes having an internal gain mechanism. Hamamatsu provides various types of Si photodiode modules. Near IR type Short wavelength type Multi-element type RGB color sensor module Color sensor evaluation circuit Driver circuit for Si photodiode array diode module Signal processing unit for photodiode module sensor amplifier Charge amplifier Note: Hamamatsu also provides PSD (position sensitive detector) used to detect the position of incident light spot. PSD is a non-discrete photosensor utilizing the surface resistance of photodiodes. 3

5 Spectral response (typical example) Hamamatsu provides a lineup that covers a variety of spectral response ranges from 2 nm to 12 nm. [ S1226/S1336-8BQ, S1227/S BR ].8 QE=1% S1336-8BQ (For UV to near IR) S BR (For UV to near IR) S1226-8BQ (IR sensitivity suppressed type) 2 S BR (IR sensitivity suppressed type) KSPDB3EC [ S359-19, S11499, S9219 ] S11499 series (Infrared sensitivity enhanced type) S (Violet sensitivity enhanced type) QE=1% S9219 (Visual-compensated type) KSPDB31EB 4

6 s Hamamatsu provides a wide variety of packages including metal, ceramic, and plastic. Si photodiodes for precision photometry Type Page Metal Ceramic Plastic Glass epoxy With BNC connector Remarks S1336 series 9 Yes S1337 series (excluding S ) 9 Yes For UV to near IR S Yes Unsealed S Yes S2281 series 1 Yes For UV to near IR S1226 series 11 Yes (IR sensitivity S1227 series 11 Yes suppressed type) S Yes For UV monitor S12698 series 12 Yes For visible range to S2386 series 13 Yes near IR S2387 series 14 Yes For visible range Si photodiodes for general photometry/visible range Type Page Metal Ceramic Plastic Glass epoxy With BNC connector Remarks Visual-sensitive S187, S1133, S Yes compensated S Yes CIE standard S Yes luminous S Yes efficiency approximation S Yes For visible range to near IR S , S S411-6DS S1787-8, S S , S187-1 S Yes 16 Yes High-speed response Si PIN photodiodes Type Page Metal Ceramic Plastic Glass epoxy With BNC connector Remarks Cutoff frequency: 1 GHz or more S5973/S955 series 17 Yes Cutoff frequency: 1 MHz to less than 1 GHz Cutoff frequency: 1 MHz to less than 1 MHz S5971, S3399 S3883, S Yes S1783, S Yes S6775/S8385/ S8729/S256 series S6967, S477-1 S681-1 S5821/S1223 series S371, S372 S Yes 2 Yes Multi-element type Si photodiodes Type Page Metal Ceramic Plastic Glass epoxy With BNC connector Remarks Segmented type Si PIN photodiode One-dimensional photodiode array S396-2, S424, S Yes S Yes S4111/S4114 series 22 Yes S12858/S12859/ S11212/S11299/ 22 Yes Unsealed S12362/S

7 s Surface mount type Si photodiodes Type Page Metal Ceramic Plastic Glass epoxy With BNC connector Remarks High-speed response Si PIN photodiode Segmented type Si photodiode Small package type Si photodiode Small package type Si PIN photodiode S516, S517 S759, S751 S598, S5981 S587, S8558 S9674 S1625-1CT S13773 S1993-2CT S CT 23 Yes 23 Yes 24 Yes 24 Yes Surface mount type Surface mount type Surface mount type Surface mount type Si photodiodes with preamp, TE-cooled type Si photodiodes Si photodiode with preamp for measurement TE-cooled type Si photodiode Type Page Metal Ceramic Plastic Glass epoxy With BNC connector Remarks S8745-1, S S9295 series 25 Yes S9269, S Yes S2592/S3477 series 26 Yes Si photodiodes for X-ray detection Si photodiode with scintillator Type Page Metal Ceramic Plastic Glass epoxy With BNC connector Remarks Large area type Si PIN photodiode S8559, S Yes S12858/S12859/ S11299/S11212/ S12362/S12363 series S359 series S865 S2744/S324/ S3584/S3588 series 27 Yes 29 Yes 3 Yes With scintillator With scintillator Special application Si photodiodes Type Page Metal Ceramic Plastic Glass epoxy With BNC connector Remarks RGB color sensor Violet/blue sensitivity enhanced type S755-1, S932-2 S Yes S GT S1942-1CT 31 Yes S6428-1, S S Yes S5973-2, S Yes S Yes Surface mount type Surface mount type For VUV (vacuum ultraviolet) S8552, S Yes Unsealed monitor For VUV detection (high reliability type) S Yes Unsealed For monochromatic light detection S Yes For YAG laser detection S Yes Infrared sensitivity enhanced type For electron beam detector S11499 series, S Yes S , S Yes Unsealed CSP type S1356-1, S Yes Unsealed PWB package with leads type S12497, S Yes Unsealed 6

8 Variety of package types Hamamatsu offers a diverse selection of package types to meet different customer needs. Metal packages are widely used in applications requiring high reliability. Ceramic packages are used for general applications and plastic packages are used in applications where the main need is low cost. Other types are also available including those with BNC connector, which facilitates connection to coaxial cable, surface mount types that support reflow soldering, and those with scintillator, which converts X-rays and radiation to visible light. [ Metal ] [ Ceramic ] [ Plastic ] [ Glass epoxy ] [ With BNC connector ] [ Surface mount type ] [ With scintillator ] Mount technology At the Solid State Division of Hamamatsu nics, we are constantly at work designing and developing our own mount technology to offer unique semiconductor devices having special features. Now we will take a brief look at our mount technology for Si photodiodes. Flip chip bonding Mounting technology for opto-semiconductors includes not only the two-stage chip die-bonding and wire-bonding but also the flip chip bonding as shown in Figure 1. Parasitic capacitance and inductance can be a problem when extracting opto-semiconductor device signals from a wire. Flipchip bonding can prevent this problem and help in downsizing since it utilizes bumps to directly join the chip to the package or an IC chip, etc. Figure 1 Example of flip chip bonding CSP (chip size package) In CSP type photodiodes, the chip and substrate are connected by bump electrodes so there is minimal dead area on the package surface area. This allows utilizing the photosensitive area more effectively. Also multiple devices can be densely arrayed and used in a tile format. There is no wiring so coupling to the scintillator is easy. Figure 2 Cross section of CSP type photodiode Si photodiode chip Bump Underfill resin (a) Mounting to a board diode chip (b) Mounting to an amplifier diode chip Substrate (PWB) Bump Bump Solder ball KSPDC65EB mounting surface Amplifier chip (c) Mounting an amplifier to a photodiode Amplifier chip Bump Si photodiode chip 7 KSPDC6EA

9 LCD backlight color adjustment Optical power meters Application examples Here, we will introduce several applications of our Si photodiodes. O ptical power meters L CD backlight color adjustment RGB color sensor Large area Si PIN photodiode RGB-LED D KSPDC82EA Optical layout Large area type Si PIN photodiodes are used to system measure thediagram light levels of various light sources such as laser diodes and LEDs. S unlight sensors KSPDC77EA The RGB color sensor detects the white balance of LCD backlight optical waveguides and controls the light level of each RGB LED to stabilize the LCD backlight color. S pectrophotometers Si PIN photodiode Focus lens Transmission grating Si photodiode array KSPDC82EA Collimating lens Entrance slit Radiation detectors KSPDC77EA KSPDC79EA KSPDC8EA Si photodiodes are used to detect the amount of sunshine to control the volume of air flow for automotive air conditioners. Si photodiode arrays are used to detect light that has been divided into wavelengths through a diffraction grating in spectrophotometers. R adiation detectors B aggage inspection equipment X-ray source Baggage under Low energy inspection X-ray High energy X-ray Conveyor Si PIN photodiode with scintillator Dryer image example Si photodiode with scintillator KSPDC81EA Si PIN photodiodes with scintillators are used in detectors that measure radiation levels of γ rays and other rays. KSPDC78EA Si PIN photodiodes with scintillators are used in dual energy imaging of baggage inspection equipment to obtain information about an object such as its type and thickness. 8

10 Si photodiodes for precision photometry For UV to near IR These Si photodiodes have sensitivity in the UV to near IR range. They are suitable for low-light-level detection in analysis and the like. Spectral response range sensitivity (A/W) λ=2 nm λ=96 nm S BQ* 1 19 to 11 2 S BK 32 to 11 - S1336-5BQ* 1 19 to 11 2 S1336-5BK 32 to 11 - S BQ* 1 19 to S BK 32 to 11 - S1336-8BQ* 1 19 to 11 2 S1336-8BK 32 to 11 - S BQ* 1 19 to S BR 34 to S BQ* 1 19 to S BR 34 to S BQ* 1 19 to S BR 34 to S BQ* 1 19 to S BR 34 to *1: Refer to "Precautions against UV light exposure" (P.48). VR=1 mv max. (pa) Terminal capacitance VR= V f=1 khz (pf) sensitive area size TO TO TO Ceramic Spectral response [ S1336-BQ, S1337-BQ ] [ S1336-BK, S1337-BR ] QE=1% QE=1% S1336-BK S1337-BR KSPDB262EF KSPDB39EA vs. reverse voltage [ S1336 series ] 1 na 1 na [ S1337 series ] 1 na S1336-8BQ/BK 1 na S BQ/BR S BQ/BR 1 pa 1 pa S BQ/BK 1 pa 1 pa S BQ/BR S BQ/BR 1 pa S BQ/BK S1336-5BQ/BK 1 pa 1 fa fa KSPDB1EB KSPDB14EB

11 Si photodiodes for precision photometry Spectral response range sensitivity (A/W) λ=2 nm λ=96 nm VR=1 mv max. (pa) Terminal capacitance VR= V f=1 khz (pf) sensitive area size S * 2 19 to Ceramic (unsealed) S to (λ=92 nm) Ceramic S2281* 2 * 3 ϕ to With BNC connector S2281-4* 2 * 3 ϕ7.98 *2: Refer to "Precautions against UV light exposure" (P.48). *3: Connecting a photodiode to the C9329 photosensor amplifier (using a BNC-BNC coaxial cable E2573) allows amplifying the photodiode s weak photocurrent with low noise. Spectral response [ S ] [ S2551 ] [ S2281, S ] QE=1% QE=1% QE=1% KSPDB34EA KSPDB173EB KSPDB27EA vs. reverse voltage [ S ] [ S2551 ] [ S2281, S ] 1 na 1 na 1 na 1 na 1 na 1 na 1 na 1 pa 1 pa 1 na 1 pa 1 na 1 pa 1 pa 1 pa 1 pa 1 pa 1 fa pa fa KSPDB35EA KSPDB175EB KSPDB271EB 1

12 For UV to near IR (IR sensitivity suppressed type) These Si photodiodes have suppressed IR sensitivity. They are suitable for low-light-level detection in analysis and the like. Spectral sensitivity response range (A/W) λ=2 nm λ=72 nm S BQ* 1 19 to 1 2 S BK 32 to 1 - S1226-5BQ* 1 19 to 1 2 S1226-5BK 32 to 1 - S BQ* 1 19 to 1 2 S BK 32 to 1 - S1226-8BQ* 1 19 to 1 2 S1226-8BK 32 to S BQ* 1 19 to S BR 34 to S BQ* 1 19 to S BR 34 to S BQ* 1 19 to S BR 34 to S BQ* 1 19 to S BR 34 to VR=1 mv max. (pa) Terminal capacitance VR= V f=1 khz (pf) sensitive area size TO TO TO Ceramic S2281-1* 1 19 to ϕ11.3 With BNC connector *1: Refer to "Precautions against UV light exposure" (P.48). Spectral response [ S1226-BQ, S1227-BQ ] [ S1226-BK, S1227-BR ] [ S ] QE=1%.6 QE=1%.6 QE=1% S1227-BR S1226-BK KSPDB263EF KSPDB38EA KSPDB32EA vs. reverse voltage [ S1226 series ] [ S1227 series ] [ S ] 1 na 1 na 1 na 1 pa 1 pa S BQ/BR 1 pa 1 pa S1226-8BQ/BK S BQ/BK 1 pa S BQ/BR 1 pa 1 pa 1 fa.1 S1226-5BQ/BK S BQ/BK pa 1 fa.1 S BQ/BR S BQ/BR pa 1 fa KSPDB275EC KSPDB96EB KSPDB321EA 11

13 Si photodiodes for precision photometry For UV monitor The S12698 series are Si photodiodes that have achieved high reliability for monitoring ultraviolet light by employing a structure that does not use resin. They exhibit low sensitivity deterioration under UV light irradiation and are suitable for applications such as monitoring intense UV light sources. sensitivity λ=λp (A/W) VR=1 mv max. (pa) sensitive area size S12698* TO-18 S * TO-5 S * TO-8 *2: Refer to "Precautions against UV light exposure " (P.48). Spectral response Changes in spectral response after irradiated with UV light.4 (Typ. Ta=25 C, D2 lamp: 3 W, irradiation distance: approx. 7 mm, irradiation time: 1 h) Rate of change (%) S12698 series Conventional type KSPDB35EA KSPDB355EA 12

14 For visible range to near IR These Si photodiodes offer enhanced sensitivity especially in the near IR range. Spectral response range sensitivity λ=96 nm (A/W) VR=1 mv max. (pa) Terminal capacitance VR= V f=1 khz (pf) sensitive area size S K TO-18 S L S2386-5K to 11.6 S K TO-5 S K S2386-8K TO-8 Spectral response vs. reverse voltage.7 1 na.6 QE=1% 1 pa S2386-8K pa 1 pa 1 fa S K/-18L/-5K/-44K/-45K KSPDB272EE 1 fa KSPDB113EE 13

15 Si photodiodes for precision photometry Spectral response range sensitivity λ=96 nm (A/W) VR=1 mv max. (pa) Terminal capacitance VR= V f=1 khz (pf) sensitive area size S R S R S R 34 to Ceramic S R S R Spectral response vs. reverse voltage.7 1 na.6 QE=1% 1 pa S R S R pa 1 pa S R 1 fa S R/-33R fa KSPDB356EA KSPDB117EC 14

16 Si photodiodes for general photometry/visible range For visible range These Si photodiodes have sensitivity in the visible range. Spectral response range Peak sensitivity wavelength sensitivity λ=λp (A/W) VR=1 V max. (pa) sensitive area size Filter type (general use) These are Si photodiodes with visible-compensated filters. The S8265 is a high humidity resistance type of the S1133. S to Ceramic S S to Ceramic.3 S to Plastic Filter type (CIE spectral luminous efficiency approximation) S to 78 S (VR=1 mv) 5 (VR=1 mv) ϕ11.3 With BNC connector TO-5 S to Ceramic Spectral response [ S187, S1133, S1787-4, S8265 ] [ S9219 series, S7686 ].4 1 QE=1% S8265 S187 S1133 S Relative sensitivity (%) CIE spectral luminous efficiency S9219 series (vertical incidence) S7686 (vertical incidence) KSPDB277EC KSPDB285ED 15

17 Si photodiodes for general photometry/visible range For visible range to near IR These Si photodiodes have sensitivity in the visible range to near IR. Spectral response range Peak sensitivity wavelength sensitivity λ=λp VR=1 V max. (pa) snsitive area size S Plastic S to S Ceramic S411-6DS S Plastic S to S Ceramic S Spectral response [ S , S4797-1, S ] [ S411-6DS, S1787-8, S2833-1, S187-1, S ] QE=1% S S QE=1% S KSPDB279EF KSPDB286ED 16

18 High-speed response Si PIN photodiodes Cutoff frequency: 1 GHz or more These Si PIN photodiodes deliver a wide bandwidth even with a low bias, making them suitable for high-speed photometry as well as optical communications. sensitivity (A/W) Cutoff frequency (GHz) sensitive area size λ=78 nm λ=83 nm Terminal capacitance f=1 MHz (pf) S (VR=3.3 V) ϕ (VR=3.3 V) S TO-18 S (VR=2 V) ϕ.2.8 (VR=2 V) S (VR=2 V) ϕ.5 (VR=2 V) Spectral response Terminal capacitance vs. reverse voltage.6 1 pf QE=1% S5973 series Terminal capacitance 1 pf S955-1 S5973/-1 S955 S955 series KPINB326EB 1 ff KPINB332EA Frequency response [ S5973, S ] [ S955 series ] λ=41 nm λ=83 nm 5 (Typ. Ta=25 C, λ=83 nm, VR=3.3 V, RL=5 Ω) 5 (Typ. Ta=25 C, VR=2 V, RL=25 Ω) 5 (Typ. Ta=25 C, VR=2 V, RL=25 Ω) S955-1 S955-1 Relative output (db) Relative output (db) S955 Relative output (db) S MHz 1 MHz 1 MHz 1 GHz 1 GHz khz 1 MHz 1 MHz 1 MHz 1 GHz 1 GHz khz 1 MHz 1 MHz 1 MHz 1 GHz 1 GHz Frequency Frequency Frequency KPINB298EA KPINB277EB KPINB278EB 17

19 High-speed response Si PIN photodiodes Cutoff frequency: 1 MHz to less than 1 GHz These Si PIN photodiodes have a large photosensitive area (ϕ.8 to ϕ3 mm) yet deliver excellent frequency response characteristics. Cutoff frequency (MHz) sensitive area size sensitivity (A/W) λ=66 nm λ=78 nm Terminal capacitance f=1 MHz (pf) S5971 S3399 S (VR=1 V) 3 (VR=2 V) ϕ ϕ ϕ1.5 3 (VR=1 V) 2 (VR=1 V) 6 (VR=2 V) TO-18 TO-5 S1783 ϕ (VR=2.5 V) S1784 ϕ (VR=2.5 V) Plastic Plastic with lens S (VR=1 V) ϕ (VR=1 V) TO-18 Spectral response [ S5971, S3399, S3883 ] [ S1783, S1784 ] [ S5972 ] QE=1%.6 QE=1% S S5971 S3399, S S QE=1% KPINB316EC KPINB355EC KPINB315ED Terminal capacitance vs. reverse voltage [ S5971, S3399, S3883 ] [ S1783, S1784 ] [ S5972 ] 1 pf (Typ. Ta=25 C, f=1 MHz) 1 pf (Typ. Ta=25 C, f=1 MHz) 1 pf (Typ. Ta=25 C, f=1 MHz) S3399 Terminal capacitance 1 pf S3883 S5971 Terminal capacitance 1 pf Terminal capacitance 1 pf 1 pf pf pf KPINB341EC KPINB358EC KPINB338EB 18

20 Cutoff frequency: 1 MHz to less than 1 MHz A wide variety of types are provided including a low-cost plastic package type and visible-cut type. S6775 S6967 S Cutoff frequency (MHz) 15 (VR=1 V) 5 (VR=1 V) 15 (VR=1 V) sensitive area size sensitivity (A/W) λ=66 nm λ=78 nm (λ=83 nm).68 (λ=λp) Terminal capacitance f=1 MHz (pf) 4 (VR=1 V) 5 (VR=1 V) 4 (VR=1 V) S S (λ=83 nm).56 (λ=λp) 12 (VR=5 V) S (VR=5 V) Plastic S (λ=83 nm).68 (λ=λp) 16 (VR=5 V) S S S (VR=12 V) (λ=83 nm).56 (λ=λp) 15 (VR=12 V) S (VR=1 V) (VR=1 V) S (VR=1 V) ϕ14 (lens diameter).52 (λ=83 nm).65 (λ=λp) 5 (VR=1 V) Plastic with ϕ14 mm lens Spectral response [ S8385/S8729 series ] [ S6775/S6967/S256 series ] [ S477-1, S681-1 ] S8729 S QE=1% S8385 S S S256-2 QE=1% S6775 S S6967 S QE=1% S477-1 S KPINB324EE KPINB167EG KPINB354EB 19

21 High-speed response Si PIN photodiodes Cutoff frequency (MHz) sensitive area size sensitivity (A/W) λ=66 nm λ=78 nm Terminal capacitance f=1 MHz (pf) S5821 ϕ1.2 S S S (VR=1 V) ϕ4.65 (lens diameter) (VR=1 V) TO-18 S1223 S (VR=2 V) 2 (VR=2 V) (VR=2 V) 2 (VR=2 V) TO-5 S372 S371 S12271* 45 (VR=24 V) 4 (VR=24 V) 6 (VR=1 V) ϕ3 ϕ5 ϕ (λ=96 nm) 7 (VR=24 V) 18 (VR=24 V) 1 (VR=1 V) TO-8 * Refer to "Precautions against UV light exposure" (P.48). Spectral response [ S5821 series, S371, S372 ] [ S1223 series ] [ S12271 ] QE=1% S5821 series S371, S QE=1 % QE=1% KPINB335EB Terminal capacitance vs. reverse voltage KPINB143EB KPINB386EB [ S5821 series, S371, S372 ] [ S1223 series ] [ S12271 ] 1 nf (Typ. Ta=25 C, f=1 MHz) 1 nf (Typ. Ta=25 C, f=1 MHz) 1 nf Terminal capacitance 1 pf 1 pf S371 S372 Terminal capacitance 1 pf 1 pf S Terminal capacitance 1 pf 1 pf S5821 series S pf pf pf KPINB344EA KPINB146EA KPINB389EB 2

22 Multi-element type Si photodiodes Segmented type Si PIN photodiodes These Si PIN photodiode arrays consist of 2 or 4 elements having sensitivity in the UV to near IR range. Number of elements sensitive area size sensitivity (A/W) Cutoff frequency VR=1 V RL=5 Ω (MHz) VR=1 V max. (na) Terminal capacitance VR=1 V f=1 MHz (pf) S /2-segment (λ=65 nm) 25.5* S /2-segment (λ=65 nm) 3 1* 1 3 Plastic 1. S A B (λ=65 nm) 15 5* 1 diode 4 A 1 diode B ( ) ( ) S4349* /4-segment (λ=72 nm) 2 (VR=5 V).2 (VR=5 V) 25 (VR=5 V) TO-5 *1: Total number of elements *2: Refer to "Precautions against UV light exposure" (P.48). Spectral response [ S396-2, S424 ] [ S9345 ] [ S4349 ] S396-2 QE=1% S QE=1% QE=1% KMPDB134EE KPINB336ED KMPDB126EB vs. reverse voltage [ S396-2, S424 ] [ S9345 ] [ S4349 ] 1 na 1 na 1 na S424 1 na 1 pa 1 pa 1 pa S na 1 pa 1 pa 1 pa 1 pa 1 fa 1 pa pa fa KMPDB136ED KPINB295EA KMPDB128EA 21

23 Multi-element type Si photodiodes One-dimensional photodiode arrays (UV to near IR: UV sensitivity enhanced type) These are Si photodiode linear arrays having rectangular elements equally spaced at a pitch of about 1 mm. Number of elements sensitive area size /element Element pitch Spectral response range 19 to 11 S Q* S R 34 to 11 sensitivity λ=96 nm (A/W) VR=1 mv max. (pa) Terminal capacitance VR= V f=1 khz (pf) 5 2 S Q* 2 35 S Q* 2 46 S Q* 2 35 S Q* to to 1.5 (λ=8 nm) 6 35 Ceramic S S S S to (λ=92 nm) 3 4 Glass epoxy (unsealed) S S *2: Refer to "Precautions against UV light exposure" (P.48). Spectral response.8 [ S4111/S4114 series ] [ S12858/S12859/S12362/S12363/S11212/S ] S Q/35Q/46Q S R QE=1% S4114 series QE=1% KMPDB112EC KMPDB357EA Structure of photosensitive area (unit: mm) [ S4111/S4114 series ] [ S11212/S ] ch 1 ch N A B N A S R/-16Q S4111/S Q S4111/S Q B KMPDA227EC.4 KMPDA228EC 22

24 Surface mount type Si photodiodes High-speed response Si PIN photodiodes These are photodiodes sealed in a chip carrier package suitable for surface mounting and allowed solder reflow mounting on PC boards for automated processes. Terminal capacitance Cutoff frequency sensitive Spectral sensitivity VR=1 V VR=1 V area size response range λ=96 nm f=1 MHz (MHz) (A/W) (pf) S S to S Ceramic S Segmented type Si photodiodes These Si photodiodes consist of 2, 4 or 16 elements and are integrated into a chip carrier package. Number of elements sensitive area size Spectral response range sensitivity λ=96 nm (A/W) Cutoff frequency VR=1 V (MHz) Terminal capacitance VR=1 V f=1 MHz (pf) S598 S /4-segment 1 1 /4-segment to Ceramic S /2-segment ch1 ch16 S /16-segment Spectral response Terminal capacitance vs. reverse voltage [ S516, S517, S759, S751, S598, S5981, S587 ] [ S8558 ] [ S516, S517, S759, S751 ] (Typ. Ta=25 C, f=1 MHz) nf QE=1%.6 QE=1% Terminal capacitance 1 nf 1 pf S516 S517 S751 S pf KPINB165EB KMPDB193EB KPINB128EA

25 Surface mount type Si photodiodes Small package type Si photodiodes These surface mount type Si photodiodes are mounted on small packages. They are tape packaged and allows solder reflow mounting. sensitive area size Spectral response range sensitivity λ=96 nm Terminal capacitance VR= V f=1 khz (pf) S to 11 Glass epoxy S1625-1CT (λ=94 nm) 2 Small package type Si PIN photodiodes These surface mount type Si PIN photodiodes are mounted on small packages. They are tape packaged and allows solder reflow mounting. sensitive area size Spectral response range S13773 ϕ.8 38 to 1 sensitivity λ=96 nm (A/W).54 (λ=8 nm) Terminal capacitance f=1 MHz (pf) 3 VR=1 V f=1 khz ( ) S1993-2CT to (VR=2.5 V) Glass epoxy S CT to (VR=12 V) Spectral response.8 [ S9674, S1625-1CT ] [ S13773, S1993-2CT, S CT ].8.7 S S CT QE=1% S1625-1CT QE=1% S13773 S1993-2CT KSPDB315EB KSPDB318EC vs. reverse voltage 1 na S CT 1 pa S1993-2CT 1 pa S1625-1CT 1 pa S9674 S fa KSPDB316EE 24

26 Si photodiodes with preamp, TE-cooled type Si photodiodes Si photodiodes with preamp for measurement These are low noise photosensors incorporating a large area Si photodiode, op amp and feedback capacitance. Cooling temperature sensitive ΔT area size ( C) Spectral response range sensitivity (V/nW) λ=2 nm λ=96 nm NEP λ=λp, f=1 Hz (fw/hz 1/2 ) Built-in feedback resistance (GΩ) S8745-1* Non-cooled S8746-1* to 11 Metal S9295* S9295-1* 3 5 S Non-cooled 34 to Ceramic S * Refer to "Precautions against UV light exposure" (P.48). NEP (noise equivalent power) vs. frequency [ S ] [ S ] [Typ. Ta=25 C, Vcc=±15 V, Cf=5 pf (built-in), RL=1 MΩ, dark state, λ=λp] 1 6 [Typ. Ta=25 C, Vcc=±15 V, Cf=5 pf (built-in), RL=1 MΩ, dark state, λ=λp] 1 6 NEP (fw/hz 1/2 ) MΩ (external connected) +11 MΩ (external connected) +111 MΩ (external connected) NEP (fw/hz 1/2 ) MΩ (external connected) +11 MΩ (external connected) +111 MΩ (external connected) S S Frequency (khz) Frequency (khz) KSPDB237EA KSPDB238EA [ S9295 series ] [ S9269, S927 ] 1 3 (Typ. Vcc=±15 V) 1 5 (Typ. Ta=25 C, Vcc=±15 V) S (Tchip=-5 C) 1 4 NEP (fw/hz 1/2 ) S9295 (Tchip=-25 C) NEP (fw/hz 1/2 ) S927 S Frequency (Hz) Frequency (khz) KSPDB23EC KSPDB241EA 25

27 Si photodiodes with preamp, TE-cooled type Si photodiodes TE-cooled type Si photodiodes These photosensors combine a UV to near infrared Si photodiode with a TE-cooler and deliver low dark current. S2592-3* Cooling temperature ΔT ( C) sensitive area size Spectral response range Peak sensitivity wavelength VR=1 mv (pa) NEP (W/Hz 1/2 ) TO-8 S3477-3* S2592-4* to TO-66 S3477-4* * Refer to "Precautions against UV light exposure" (P.48). Spectral response Thermistor temperature characteristics (Typ.).6 QE=1% Resistance (Ω) KSPDB182EC Element temperature ( C) KIRDB116EA 26

28 Si photodiodes for X-ray detection Si photodiodes with scintillator These detectors are comprised of a Si photodiode coupled to a scintillator. Ceramic scintillators have sensitivity to X-rays about 1.2 times higher than CWO and offer high reliability. CsI scintillators also have high sensitivity and are low-cost. The S11212 and S11299 series photodiode arrays have a back-illuminated structure. They realize superb spectral response and sensitivity uniformity compared to our previous products. sensitive Scintillator area size Number of max. X-ray sensitivity* /element elements VR=1 mv (pa) (na) S8559 CsI(TI) S8193 GOS ceramic 3 Ceramic S S CsI(TI) 5. S S GOS ceramic Glass epoxy S S Phosphor sheet 2.2 S S CsI(TI) 6. S S GOS ceramic Glass epoxy S S Phosphor sheet 3. S S CsI(TI) 12.5 S S GOS ceramic Glass epoxy S S Phosphor sheet 6. * These are for reference (X-ray tube voltage: 12 kv, tube current: 1. ma, aluminum filter t=6 mm, distance: 83 mm), X-ray sensitivity depends on the X-ray equipment operating and setup conditions. 27

29 Si photodiodes for X-ray detection Spectral response (S12858/S12859/S11212/S11299/S12362/S12363 series) Uniformity (S11212/S11299 series) QE=1% Relative sensitivity (%) Element no. KMPDB361EC * Spectral response characteristics include the transmittance and reflectance of the adhesive resin used to bond a scintillator. KMPDB36EC Emission spectrum of scintillator and spectral response 1 [ S11212/S [CsI(Tl)] ] [ S11212/S (GOS ceramic) ] (Typ.) 1 QE without scintillator 1 (Typ.) 1 QE without scintillator Relative emission output (%) Emission spectrum of CsI(Tl) scintillator Quantum efficiency (%) Relative emission output (%) Emission spectrum of ceramic scintillator Quantum efficiency (%) KSPDB282EE KSPDB281EE Typical scintillator characteristics Parameter Condition CsI(TI) GOS ceramic Unit Peak emission wavelength nm X-ray absorption coefficient 1 kev 1 7 cm -1 Refractive index λ=λp Decay constant 1 3 µs Afterglow 1 ms after X-ray turn off.3.1 % Density g/cm 3 Color Transparent Light yellow-green - Sensitivity nonuniformity ±1 ±5 % 28

30 Large area Si PIN photodiodes These Si PIN photodiodes, mounted on a white ceramic base, are specifically developed for applications in high energy physics and are mainly used being coupled to a scintillator. Because of high resistance to high voltages, these Si PIN photodiodes operate at high reverse voltages allowing a high-speed response despite the large photosensitive areas. The S359-18/-19 are violet sensitivity enhanced type and the S is an unsealed type. To improve photodiode-to-scintillator coupling efficiency, we also offer the S865 with epoxy resin coating window processed to have a flat surface. Terminal Window sensitive Depletion layer Spectral thickness response sensitivity capacitance max. area size VR=7 V range λ=96 nm VR=7 V VR=7 V f=1 MHz (A/W) (na) (pf) S359-8 Epoxy resin S359-9 Unsealed.66 6 S Epoxy resin to S Unsealed Ceramic S865 Epoxy resin.66 6 Spectral response [ S359-8, S865 ] [ S359-9 ] [ S359-18/-19 ] QE=1% QE=1% QE=1% S S KPINB347ED KPINB263EB KPINB322EC Terminal capacitance vs. reverse voltage [ S359 series, S865 ] (Typ. Ta=25 C, f=1 MHz) 1 nf Emission spectrum of scintillators and spectral response (S359-8) 1 1 Terminal capacitance 1 nf 1 pf S359-18/-19 S359-8/-9 S865 Relative emission intensity (%) Nal(Tl) BGO Csl(Tl) Spectral response Quantum efficiency (%) 1 pf KPINB331EC KPINB17ED 29

31 Si photodiodes for X-ray detection Window sensitive area size Depletion layer thickness VR=7 V Spectral response range sensitivity λ=96 nm (A/W) max. VR=7 V (na) Terminal capacitance VR=7 V f=1 MHz (pf) S Epoxy resin S Unsealed S324-8 Epoxy resin S324-9 Unsealed S Epoxy resin S Unsealed S Epoxy resin S Unsealed to Ceramic Spectral response.7.6 [ S2744/S3588 series ] [ S324/S3584 series ].7 S2744/S S324/S QE=1% S2744/S QE=1% S324/S KPINB265EE KPINB277EC Terminal capacitance vs. reverse voltage 1 nf [ S2744/S3588 series ] [ S324/S3584 series ] (Typ. Ta=25 C, f=1 MHz) (Typ. Ta=25 C, f=1 MHz) 1 nf S3584-8/-9 Terminal capacitance 1 nf 1 pf S2744-8/-9 Terminal capacitance 1 nf 1 pf S324-8/-9 S3588-8/-9 1 pf KPINB222EA 1 pf KPINB23EC 3

32 Special application Si photodiodes RGB color sensors These photosensors are color sensors using a 3-element photodiode with color sensitivity, assembled in one package. S932-2* 1 S972* / 3-segment Spectral Peak VR=1 V sensitivity response range sensitivity Total number sensitive λ=λp wavelength of elements area size max. (A/W) (pa) Blue 4 to Blue 8 Blue ( 2) S755-1 Green 48 to 6 54 Green.23 2 Green Red 59 to Red 6 Red Green 48 to 6 54 Green.23 1 ϕ2 / 3-segment Blue 4 to Blue 8 Red 59 to Red 6 Green 48 to 6 54 Green / 3-segment Blue 4 to Blue 8 Red 59 to Red 6 Blue 39 to Blue.2 S GT Green 47 to 6 54 Green / 3-segment Red 59 to Red 7 S1942-1CT See the spectral response. Green.25* 2 Blue.21* 2 Red.45* 2 Surface mount type plastic Surface mount type plastic Surface mount type, small plastic Surface mount type, small, glass epoxy Surface mount type, small glass epoxy *1: If excessive vibration is continuously applied to the glass filter, there is a risk that the filter may come off, so secure the glass filter with a holder. *2: Blue: λ=46 nm, Green: λ=54 nm, Red: λ=64 nm Spectral response [ S755-1, S932-2, S972 ] [ S GT ] [ S1942-1CT ] Red Green Blue Green.4.2 Blue Red.2 Red.3.2 Green Blue KMPDB217EC KSPDB295EB KSPDB287EB This sensor also has sensitivity in the infrared region, so cut off infrared light as needed. 31

33 Special application Si photodiodes The S6428-1, S and S643-1 are monochromatic color sensors sensitive to blue, green and red light, respectively. Spectral response range Peak sensitivity wavelength sensitivity λ=λp (A/W) VR=1 V max. (pa) sensitive area size S to S to Plastic S to Spectral response.5 S QE=1%.3 S S KSPDB28EC 32

34 Violet/blue sensitivity enhanced type These are photodiodes for violet/blue laser diode detection. Cutoff frequency (MHz) sensitive area size (MHz) Peak sensitivity wavelength (MHz) sensitivity (MHz) max. (MHz) Terminal capacitance f=1 MHz (pf) S GHz (VR=3.3 V) ϕ (λ=41 nm) (VR=3.3 V) 1.6 (VR=3.3 V) TO-18 S (VR=1 V) (λ=45 nm) 5 (VR=1 V) 6 (VR=1 V) TO-8 S (VR=3 V) (λ=4 nm) 1 (VR=3 V) 4 (VR=3 V) Ceramic Spectral response [ S ] [ S9195 ] [ S ] QE=1%.6 QE=1%.6 QE=1% vs. reverse voltage KPINB337EC KPINB289EB KPINB198EB [ S ] [ S9195 ] [ S ] 1 pa 1 na 1 na 1 na 1 pa 1 na 1 pa 1 pa 1 na 1 pa 1 fa pa pa KPINB4EA KPINB291EA KPINB199EA 33

35 Special application Si photodiodes For VUV (vacuum ultraviolet) monitor These Si photodiodes are specially optimized for excimer laser monitor (ArF: 193 nm, KrF: 248 nm): sensitive in the vacuum UV (VUV) range. sensitivity VR=1 mv sensitive λ=193 nm max. area size (A/W) (na) S8552* S8553* Ceramic (unsealed) * Refer to "Precautions against UV light exposure " (P.48). For VUV detection (high reliability type) The S143 is greatly improved in sensitivity stability even after exposure to ArF (λ=193 nm) excimer laser. sensitivity λ=193 nm (A/W) VR=1 mv max. (na) sensitive area size S143* Ceramic (unsealed) * Refer to "Precautions against UV light exposure " (P.48). Variation in sensitivity due to UV exposure Spectral response 12 [Typ. Ta=25 C, ArF excimer laser, mj/cm 2 /pulse, f=1 Hz, λ=193 nm, pulse width=15 ns (FWHM)] S S8552, S8553 Relative sensitivity (%) S8552, S8553 S1227/S1337 series (unsealed products) S KSPDB283EB Number of shots KSPDB264ED S8552, S8553 S KSPDB284EB 34

36 For monochromatic light detection This photosensor uses an interference filter and has high sensitivity only to monochromatic light. Peak sensitivity wavelength Spectral response half-width sensitivity λ=254 nm (A/W) VR=1 mv max. (pa) sensitive area size S * TO-5 *1: Refer to "Precautions against UV light exposure" (P.48). Spectral response 5 4 sensitivity (ma/w) KSPDB333EA Note: Different types compatible with wavelengths other than the 254 nm center wavelength are also available (made-to-order product). For YAG laser detection This is a Si PIN photodiode developed to measure infrared energy emitted from YAG lasers (1.6 μm). sensitive area size Spectral response range Peak sensitivity wavelength sensitivity λ=16 nm (A/W) VR=1 V max. (na) Rise time λ=16 nm VR=1 V, RL=5 Ω (ns) S3759 ϕ5 36 to TO-8 Spectral response Response waveform.8 [Typ. Ta=25 C, λ=16 nm (YAG laser), VR=1 V, RL=5 Ω] 1% QE=1% 5% KPINB279EB 12.5 ns KPINB28EC 35

37 Special application Si photodiodes Infrared sensitivity enhanced type These are Si PIN photodiodes that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. (Typ. Ta=25 C) S11499 sensitive area size ϕ3 Spectral response range sensitivity λ=16 nm (A/W).6 max. (na) 5 (VR=2 V) Terminal capacitance f=1 MHz (pf) 13 (VR=2 V) TO-5 S ϕ5 36 to (VR=2 V) 33 (VR=2 V) TO-8 S1228 ϕ1.2.5 (VR=1 V) 2 (VR=1 V) 4 (VR=1 V) TO-18 Spectral response [ S11499 series ] [ S1228 ].8.8 (Typ. Ta=25 C, VR=1 V).7 S11499 series QE=1% S2386 series QE=1% KPINB368EC KPINB376EC For electron beam detector These photodiodes directly detect low energy (1 kev or more) electron beams with high sensitivity. The structure with an extremely thin dead layer (insensitive layer) makes these photodiodes ideal for backscattered electron detector for Scanning Electron Microscope (SEM). Incident electron energy range (kev) Output current (na) VR=5 V max. (na) Terminal capacitance VR=5 V (pf) Cutoff frequency VR=5 V (MHz) Electron multiplying gain S to 3 Electron 1.5 kev energy: 6 Electron 3 lp* 2 =1 pa energy: S kev *2: Probe current ( ) ( ) Thin ceramic (unsealed) Gain vs. electron energy Electron multiplication principle (Typ. Ta=25 C) 1 (Typ. Ta=25 C, Ip=1 pa) Output current Si photodiode Silicon Vacuum Gain 1 Electron Dead layer Detail Generation of electron-hole pairs (electron multiplication) Electron energy (kev) KSPDB344EA Electrons generate ions as they pass through silicon. This ionization process generates a large number of electron-hole pairs that then multiply the number of electrons. The electron multiplication can boost the output current by approximately 3 times at an input electron energy of 1.5 kev (refer to "Gain vs. electron energy"). KSPDC89EA 36

38 CSP type The S and S are back-illuminated type photodiodes designed to minimize the dead areas at the device edges by using a CSP (chip size package) structure. The CSP also allows using multiple devices in a tiled format. Spectral - Short circuit Terminal size Peak sensitivity response range sensitivity current capacitance wavelength λ=96 nm 1 lx, 2856 K VR= V, f=1 khz (A/W) (µa) (pf) S to S PWB (unsealed) Spectral response.7.6 QE=1% KSPDB288EE PWB package with leads type The S12497 and S12498 are Si photodiodes suitable for non-destructive inspection of baggage and the like and general industrial measurement. As they are back-illuminated photodiodes, photosensitive area does not have wires, and therefore a scintillator can be mounted directly on the photodiode. - Short circuit Terminal sensitive Spectral Peak sensitivity sensitivity current capacitance area response range wavelength λ=92 nm 1 lx, 2856 K VR= V, f=1 khz (A/W) (µa) (pf) S to S Spectral response QE=1% KSPDB36EB 37

39 Related products of Si photodiode RGB color sensor modules For TFT-LCD monitor RGB-LED backlight monitor for TFT-LCD (liquid crystal display) Features Applications Built-in RGB color sensor (S932-2) Sensitivity matches wavelengths of RGB-LED backlight for TFT-LCD. 3 ch current-to-voltage amplifiers Simultaneous output of 3 ch RGB photocurrent Configuration and size suitable for side mounting to TFT-LCD Low current consumption:.4 ma typ. (1/3 than the conventional type) High gain type (C933-4) RGB-LED backlight monitor for TFT-LCD sensitivity (V/mW) λp=62 nm λp=54 nm λp=46 nm Cutoff frequency -3 db (khz) C C Supply voltage (V) +2.7 to +5.5 Color sensor evaluation circuit Color sensor evaluation circuit board Features 3 ch current-to-voltage conversion amplifier for color sensor evaluation Color sensors that mount on C9331: S755-1, S932-2 (sold separately) Applications Evaluation of Hamamatsu color sensor (Ta=25 C, Vcc=9. V, common to each RGB channel) Output offset voltage Zt= V/A Conversion Cutoff frequency [without photodiode] impedance [without photodiode] (mv) -3 db Supply voltage Typ. Max. (V/A) (khz) (V) C9331 ±4 ± to to

40 Driver circuit for Si photodiode array Driver circuit for 16-element photodiode array Features High precision and high-speed measurement by simultaneous 16-channel readout Assembled with pulse generator (8-step adjustable oscillatory frequency) CLK, START, A/D conversion Trig and EOS pulse output Choice of gain (conversion impedance): V/A or V/A Single power supply operation: +12 V C94 Applicable sensor Hamamatsu S series, S11212 series photodiode arrays are directly mountable on board. diode modules Integrates a Si photodiode for precision photometry with low-noise amplifier. The C1439 series is a high-precision photodetector that combines a photodiode and current-tovoltage conversion amplifier. Features Easy handling Two switchable photosensitivity ranges Compact size sensitive area size C C C Si C C C C ϕ1 InGaAs C ϕ3 sensitivity λ=λp High range (mv/nw) Low range (mv/nw) Conversion impedance High range (V/A) Low range (V/A) Cutoff frequency -3 db Supply voltage High range Low range (Hz) (Hz) (V) k k 1 k* 1 C InAsSb * 2.45* k *1: Output amplitude 2 Vp-p *2: Uniform irradiation on the entire photosensitive area Dimensions W D H External power supply ±5 to ± Signal processing unit for photodiode module Unit dedicated for photodiode module (C1439 series) The C1475 converts the output from a photodiode module (C1439 series) into digital signals. Also supplies power to the photodiode module. Features High-resolution digital output (16-bit) Data logger function RS-232C cable is optional. Digital output Minimum measurement time interval (ms) C1475 Conforms to RS-232C (16-bit) 5 Supply voltage (V) AC adapter (+12) or battery (+9) Dimensions W D H

41 Related products of Si photodiode sensor amplifier For low-light-level detection Digital output function, current-to-voltage conversion amplifier for amplifying very slight photocurrent with low noise Features Three sensitivity ranges Selectable operation modes (analog output / digital output) Serial connection (RS-232C) with PC Data logger function, low battery function C9329 Range Conversion impedance (V/A) Cutoff frequency -3 db (Hz) H M L Power supply (V) AC adapter (+12) or battery (+9) diode, coaxial cable with BNC-BNC plug and RS-232C cable are optional. Dimensions W D H With optical fiber Light-to-voltage conversion amplifier with optical fiber Features Easy handling Built-in photodiode allows easy detection of light just by connecting to a voltmeter, etc. Optical fiber light input Measures light at a narrow detection point. Separating the amplifier from the detection point allows measurement in unusual environments and achieves low noise. Three sensitivity ranges C Range sensitivity λ=83 nm (mv/µw) Conversion impedance (V/A) Cutoff frequency -3 db (MHz) Power supply (V) H External power M supply (±15) or batteries L (two 9 V batteries) Dimensions W D H High-speed type Current-to-voltage conversion amplifier Features C8366: for high speed Si PIN photodiode C8366-1: for high speed InGaAs photodiode Wide bandwidth: DC to 1 MHz typ. (-3 db; varied by the photodiode used) Just inserting the photodiode leads makes the connection. (Compatible with TO-8, TO-5 and TO-18 packages) Adjustable response speed Response speed can be adjusted by a trimmer potentiometer easily. Compact size C8366 C Conversion impedance (V/A) Cutoff frequency -3 db (MHz) Power supply (V) Dimensions W D H External power supply (±15)

42 Compact board type Current-to-voltage conversion amplifier for low-level-light Features Compact board type for easy assembly Usable with photodiodes having large terminal capacitance Conversion impedance: 1 8 V/A Conversion impedance (V/A) Cutoff frequency -3 db (Hz) Power supply (V) Dimensions W D H C AC adapter (+12) Charge amplifier For radiation and high energy particle detection The H483 is a low-noise hybrid charge amplifier designed for a wide range of spectrometric applications including soft X-ray and low to high energy gamma-ray spectrometry. The first stage of this amplifier uses a low-noise junction type FET, which exhibits excellent performance when used with a photodiode having a large junction capacitance. The H483 is especially suited for use with Hamamatsu S359/S324 series, etc. Si PIN photodiodes. S359 series photodiodes can be directly mounted on the backside of the H483, so there will be no increase in stray capacitance. Features Low noise Compact and lightweight Easy handling Applications Detection of X-rays, radiation, high energy particles H483 Amplification method Input/ output polarity Charge-sensitive type Inverted Charge gain.5 V/pC 22 mv/mev (Si) Noise characteristic (e-/fwhm) Negative feedback constant Power supply (V) Current consumption (mw) Dimensions W D H 55 5 MΩ//2 pf ±