Standard InGaAs Photodiodes IG17-Series

Transcription

1 Description The IG17-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 1.7 µm. This series has been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range. Features 5 % cut-off wavelength > 1.65 µm peak responsivity: 1.5 A/W Excellent temperature stability Reduced edge effect - Applications Spectrophotometer Diode laser monitoring Non-contact temperature measurement Flame control Moisture monitoring Versions Uncooled TO-can, SMD, chip only, ceramic substrate, digital module Cooled TE1, TE2, TE3 1

2 Optical Characteristics, 25 C Part Number Diameter [µm] 5% Cut off Wavelength a [µm] Peak Wavelength a [µm] Peak Responsivity a,b [A/W] 9 nm a,b [A/W] 13 nm a,b [A/W] 15 nm a,b [A/W] Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. IG17X25S4i 25 IG17X1S4i 1 IG17X13S4i 13 >1.65 ± IG17X2G1i 2 IG17X3G1i 3 a Parameter tested on batch level at T =25 C. b Responsivity measured at V Bias. Electro-Optical Characteristics, 25 C Part Number Diameter [µm] Shunt V R = 1 mv b [MOhm] Dark V R = 5 V b [na] Peak D* a [cm Hz ½ /W] Peak NEP a [W/Hz ½ ] V R = V a [pf] Forward Voltage [V] Min. Typ. Typ. Max. Typ. Typ. Typ. Typ. IG17X25S4i E E IG17X1S4i E E IG17X13S4i E E IG17X2G1i E E-14 7 IG17X3G1i E E a Parameter tested on batch level b Parameter 1% tested 2

3 Thermoelectrically Cooled InGaAs Detectors Part Number Diameter [µm] Operating Temperature [ C] Shunt V R = 1 mv b [MOhm] Peak D* a [cm Hz ½ /W] Peak NEP a [W/Hz ½ ] V R = V a [pf] Min. Typ. Typ. Typ. Typ. IG17X1T E E IG17X13T E E IG17X2T E E-15 7 IG17X3T E E IG17X1T E E IG17X13T E E IG17X2T E E-15 7 IG17X3T E E a Parameter tested on batch level b Parameter 1% tested Absolute Maximum Ratings Min. Max. Storage Temperature [ C] Operating Temperature [ C] Reverse Bias, cw [V] - 1 Forward Current, cw [ma] - 1 Soldering Temperature, 5 sec. [ C] - 26 ESD Damage Threshold, Human Body Model Class 1A*, [V] 25 <5 TE Cooler Voltage [V] TE Cooler Current [A] *ANSI/ ESD STN

4 Fig. 1: Spectral Response Fig. 2: Dark Current vs. Reverse Voltage Responsivity (A/W) 1,6 1,4 1,2 1,8,6,4,2-4C -2C 25C 65C Wavelength (nm) Dark Current (A), T = 25 C 1,E-7 IG17X3 IG17X2 1,E-8 IG17X13 IG17X1 1,E-9 IG17X25 1,E-1 1,E Reverse Voltage (V) Fig. 3: Shunt vs. Temperature Fig. 4: Detectivity vs. Shunt x Area 1,E+5, Vr = 1mV 1, T = 25 C Shunt (MΩ) 1,E+4 1,E+3 1,E+2 1,E+1 1,E+ IG17X3 IG17X1 IG17X13 IG17X2 Detectivity D* (x1 12 cmhz 1/2 /W) IG17X25 IG17X1 IG17X2 IG17X3 1,E Temperature ( C) Ro Area (x1 5 cm² Ω) Fig. 5: Capacitance vs. Reverse Voltage Fig. 6: Responsivity Temperature Coefficient I 1,E+4 1,8,6 Capacitance (pf) 1,E+3 1,E+2 IG17X3 IG17X2 IG17X13 IG17X1 % Change / C,4,2 -,2 -,4 25 C to 65 C -4 C to 25 C -,6 -,8 1,E Reverse Voltage (V) Wavelength (nm) 4

5 Fig. 7: Responsivity Temperature Coefficient II Fig. 8: Sample Pulse Response % Change / C C to 65 C C to 25 C Wavelength (nm) Normalized Response (a.u.) 1,2, λ Test =131nm, Frequency = 1kHz RL = 5Ω, Bias = V 1,8,6,4 IG17X3,2 IG17X Time (µs) Fig. 9: TEC Voltage vs. Temperature Fig. 1: TEC Current vs. Temperature 3 25 Dual Stage TEC T9, Ambient T = 25 C 1 Single Stage TEC T7, Ambient T = 25 C TEC Supplied Voltage (mv) Single Stage TEC T7 TEC Supplied Current (ma) 5 Dual Stage TEC T Chip Temperature ( C) Chip Temperature ( C) Fig. 11: TEC Power vs. Temperature Fig. 12: T9 Thermistor Temperature Characteristics TEC Supplied Power (mw) Dual Stage TEC T9 Single Stage TEC T7, Ambient T = 25 C Thermistor Value (kω) 92,36 1,E+2 67,62 5,2 37,76 28,75 22,14 17,24 13,56 1,76 8,62 1,E+1 6,96 5,67 4,65 3,84 3,2 2,68 2,25 1,91 1,63 1,39 1,2 1,4,9 1,E+,78,69, Chip Temperature ( C) 1,E Chip Temperature ( C) 5

6 Fig. 13: T7 Thermistor Temperature Characteristics Fig. 14: Linearity 1,E+1 11, Wavelength = 131nm Thermistor Value (kω) 1,E+ 4,39 3,58 2,93 2,42 2,1 1,68 1,42 1,2 1,2,87,75,65,56,49,43,38 Relative Sensitivity (%) IG17X3 1,E Chip Temperature ( C) Incident Light Level (mw) Nomenclature I G 1 7 X 2 5 S 4 i Type Standard InGaAs PIN Photodiode Standard window: Borosilicate glass Diameter 25 = 25 µm 1 = 1 mm 13 = 1.3 mm 2 = 2 mm 3 = 3 mm Package Style S4i - TO-46, isolated S4ix - TO-46, no window G1i - TO-5, isolated G1ix - TO-5, no window T7 - TO-37, single stage TEC T9 - TO-66, dual stage TEC C - Chip M9-8 pad surface mount device Y3-2 pad ceramic substrate Custom option: AR/AR, nm, R (avg) < 1% 6

7 Package Drawings S4i G1i 7

8 T7 T9 8

9 M9 Y3 9

10 Chip D- MAJOR-A: Digital Module, RS-232, Digital and Analog Output Pin# Signal Name Electrical Data Description 1 TempOut 25 mv Analog temp output 2 SensorOut 33 mv Analog sensor output 3 +5 V 5 V ±1% Power supply input 4 TxD RS-232 levels Serial data output 5 BSLprg RS-232 levels BSL programming signal 6 RxD RS-232 levels Serial data input 7 Reset RS-232 levels Reset input signal, low active 8 GND V Ground signal Please get in contact for more details of the MAJOR. 1

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